公开(公告)号：US11380539B2

公开(公告)日：2022-07-05

申请号：US16789106

申请日：2020-02-12

Applicant: ENTEGRIS, INC.

Inventor： Han Wang ,  Bryan C. Hendrix ,  Eric Condo ,  Thomas H. Baum

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/34 ,  C23C16/04 ,  C23C16/455

Abstract: Certain embodiments of the invention utilize low temperature atomic layer deposition methodology to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses silicon tetraiodide (SiI4) or disilicon hexaiodide (Si2I6) as one precursor and uses a nitrogen-containing material such as ammonia as another precursor. In circumstances where a selective deposition of silicon nitride is desired to be deposited over silicon dioxide, the substrate surface is first treated with ammonia plasma.

公开(公告)号：US20200378011A1

公开(公告)日：2020-12-03

申请号：US16898149

申请日：2020-06-10

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  David W. Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C28/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  C23C16/04 ,  C23C14/24 ,  C23C14/50 ,  C23C16/40

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

公开(公告)号：US10475575B2

公开(公告)日：2019-11-12

申请号：US14649334

申请日：2013-09-30

Applicant: ENTEGRIS, INC.

Inventor： Bryan C. Hendrix ,  Weimin Li ,  James Anthony O'Neill

IPC: H01G4/10 ,  H01G4/01 ,  C23C16/44 ,  C23C16/455 ,  H01L49/02

Abstract: A high dielectric constant metal-insulator structure, including an electrode comprising NiOx wherein 1

公开(公告)号：US20190100842A1

公开(公告)日：2019-04-04

申请号：US16123149

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  David W. Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C28/04 ,  C23C14/50 ,  C23C16/40 ,  C23C16/44 ,  C23C14/24 ,  C23C16/455

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that deleterious to the substrate article, structure material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

公开(公告)号：US20180130654A1

公开(公告)日：2018-05-10

申请号：US15862205

申请日：2018-01-04

Applicant: Entegris, Inc.

Inventor： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

IPC: H01L21/02 ,  H01L29/06

CPC classification number: H01L21/02211 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/31604 ,  H01L21/31608 ,  H01L29/0649

Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

公开(公告)号：US20170352549A1

公开(公告)日：2017-12-07

申请号：US15613773

申请日：2017-06-05

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix

IPC: H01L21/311

CPC classification number: H01L21/31122

Abstract: A method is described for vapor phase etching of oxide material including at least one of hafnia (HfO2) and zirconia (ZrO2), in the absence of plasma exposure of the oxide material. The method involves contacting the oxide material with an etching medium including at least one of phosphorus chloride and tungsten chloride under conditions producing a removable fluid reaction product, and removing the removable fluid reaction product. The etching process may be controllably carried out by use of pressure swings, temperature swings, and/or modulation of partial pressure of Hf or Zr chloride in the reaction, e.g., to achieve precision etch removal in the manufacture of semiconductor devices such as 3D NAND, sub-20 nm DRAMs, and finFETs.

公开(公告)号：US20140329025A1

公开(公告)日：2014-11-06

申请号：US14335897

申请日：2014-07-19

Applicant: Entegris, Inc.

Inventor： John M. Cleary ,  Jose I. Arno ,  Bryan C. Hendrix ,  Donn Naito ,  Scott Battle ,  John N. Gregg ,  Michael J. Wodjenski ,  Chongying Xu

IPC: C23C16/448 ,  C23C16/455 ,  C23C14/48

CPC classification number: C23C16/4481 ,  C23C14/48 ,  C23C16/08 ,  C23C16/16 ,  C23C16/18 ,  C23C16/30 ,  C23C16/4402 ,  C23C16/45525 ,  C23C16/45544

Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Abstract translation: 挥发易于产生颗粒的源试剂的源试剂的装置和方法，其中通过蒸气发生系统的结构或加工特征抑制了这种颗粒产生或存在的相应源试剂蒸气。 这种装置和方法适用于液体和固体源试剂，特别是固体源试剂如金属卤化物，例如氯化铪。 一种具体实施方案中的源试剂由源试剂材料的多孔整体块形式构成。 本发明的装置和方法有用地用于提供用于例如原子层沉积（ALD）和离子注入的应用的源试剂蒸气。

公开(公告)号：US20250079157A1

公开(公告)日：2025-03-06

申请号：US18819915

申请日：2024-08-29

Applicant: ENTEGRIS, INC.

Inventor： Rong Zhao ,  Eric Condo ,  Bryan C. Hendrix ,  Lucas B. Henderson ,  Philip S.H. Chen

IPC: H01L21/02

Abstract: Methods improving metal oxide deposition with nitrogen oxide, related devices, and related systems are provided herein. The method comprises flowing an ozone gas from an ozone generator to a deposition chamber. The method comprises flowing a nitrogen oxide gas from a first source to the deposition chamber. The method comprises flowing a first precursor gas from a second source to the deposition chamber. The method comprises exposing a substrate located in the deposition chamber to at least one of the ozone gas, the nitrogen oxide gas, the first precursor gas, or any combination thereof. The method step of exposing is sufficient to form a film having a step coverage of at least 50%. The substrate has at least one structure with an aspect ratio of at least 10:1.

公开(公告)号：US20250019822A1

公开(公告)日：2025-01-16

申请号：US18769237

申请日：2024-07-10

Applicant: ENTEGRIS, INC.

Inventor： Bryan C. Hendrix ,  Scott L. Battle ,  Dalton Vance Locklear

IPC: C23C16/44 ,  C23C16/12 ,  C23C16/448

Abstract: Metal getters in vaporizers, and related systems and methods, are provided. A vaporizer comprises a vessel having an outlet. The vessel is configured to discharge a metal halide vapor through the outlet. The vaporizer comprises a metal getter located within the vessel between the inlet and the outlet. When an oxygen-containing species is present within the vessel, an impurity content of the metal halide vapor that is discharged from the vessel is less than an impurity content of a precursor vapor that is discharged from a vessel without the metal getter.

公开(公告)号：US12037681B2

公开(公告)日：2024-07-16

申请号：US17854473

申请日：2022-06-30

Applicant: ENTEGRIS, INC.

Inventor： Sungsil Cho ,  Seobong Chang ,  Jae Eon Park ,  Bryan C. Hendrix ,  Thomas H. Baum

IPC: C23C16/36 ,  C23C16/56 ,  C23C22/73 ,  H01L21/02

CPC classification number: C23C16/36 ,  C23C16/56 ,  C23C22/73 ,  H01L21/0214 ,  H01L21/02263

Abstract: Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with O2 plasma.