公开(公告)号：US08877536B1

公开(公告)日：2014-11-04

申请号：US13075806

申请日：2011-03-30

Applicant: Emmanuel P. Quevy ,  Carrie W. Low

Inventor： Emmanuel P. Quevy ,  Carrie W. Low

IPC: H01L21/00

CPC classification number: B81B3/0072

Abstract: A method of manufacturing an integrated circuit including a MEMS device includes forming a structural layer above a substrate including at least one semiconductor device. The method includes forming an attachment to a first portion of the structural layer, the attachment having a thickness substantially greater than a thickness of the structural layer. In at least one embodiment of the method, the attachment is conjoined with the first portion of the structural layer and the first portion of the structural layer and the attachment are operative to mechanically move in unison. In at least one embodiment of the method, forming the attachment includes forming a patterned filler layer of a first material above the structural layer and forming a patterned conformal layer of a second material on the patterned filler layer. The filler layer has a thickness substantially greater than the thickness of the structural layer.

Abstract translation: 制造包括MEMS器件的集成电路的方法包括在包括至少一个半导体器件的衬底上形成结构层。 该方法包括形成与结构层的第一部分的附件，附件具有基本上大于结构层厚度的厚度。 在该方法的至少一个实施例中，附件与结构层的第一部分结合，并且结构层的第一部分和附件可操作以一致地机械移动。 在该方法的至少一个实施例中，形成附件包括在结构层上方形成第一材料的图案填充层，并在图案化的填料层上形成第二材料的图案化保形层。 填料层的厚度基本上大于结构层的厚度。

公开(公告)号：US08852984B1

公开(公告)日：2014-10-07

申请号：US13075800

申请日：2011-03-30

Applicant: Emmanuel P. Quevy ,  Carrie W. Low ,  Jeremy Ryan Hui ,  Zhen Gu

Inventor： Emmanuel P. Quevy ,  Carrie W. Low ,  Jeremy Ryan Hui ,  Zhen Gu

IPC: H01L21/20

CPC classification number: B81B3/0062 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0735 ,  G01C19/5712

Abstract: In at least one embodiment of the invention, a method of manufacturing an integrated circuit including a microelectromechanical system (MEMS) device includes forming a first structural layer above at least one semiconductor device formed on a substrate. The method includes forming a second structural layer above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. The MEMS device comprises at least one portion of at least one of the first and second structural layers. In at least one embodiment of the invention, the method is carried out at one or more temperatures less than a tolerable threshold temperature for the at least one semiconductor device.

Abstract translation: 在本发明的至少一个实施例中，制造包括微机电系统（MEMS）器件的集成电路的方法包括在形成在衬底上的至少一个半导体器件上形成第一结构层。 该方法包括在第一结构层上形成第二结构层。 第二结构层的厚度基本上大于第一结构层的厚度。 MEMS器件包括第一和第二结构层中的至少一个的至少一部分。 在本发明的至少一个实施例中，所述方法在小于所述至少一个半导体器件的可容许阈值温度的一个或多个温度下进行。

公开(公告)号：US08674775B2

公开(公告)日：2014-03-18

申请号：US13173449

申请日：2011-06-30

Applicant: Mehrnaz Motiee ,  Emmanuel P. Quevy ,  David H. Bernstein

Inventor： Mehrnaz Motiee ,  Emmanuel P. Quevy ,  David H. Bernstein

IPC: H03B5/30

CPC classification number: H03H9/2457 ,  H03H9/2452 ,  H03H2009/02299 ,  H03H2009/02511

Abstract: A microelectromechanical system (MEMS) device includes a resonator anchored to a substrate. The resonator includes a first strain gradient statically deflecting a released portion of the resonator in an out-of-plane direction with respect to the substrate. The resonator includes a first electrode anchored to the substrate. The first electrode includes a second strain gradient of a released portion of the first electrode. The first electrode is configured to electrostatically drive the resonator in a first mode that varies a relative amount of displacement between the resonator and the first electrode. The resonator may include a resonator anchor anchored to the substrate. The first electrode may include an electrode anchor anchored to the substrate in close proximity to the resonator anchor. The electrode anchor may be positioned relative to the resonator anchor to substantially decouple dynamic displacements of the resonator relative to the electrode from changes to the substrate.

Abstract translation: 微机电系统（MEMS）装置包括锚定到基板的谐振器。 谐振器包括使第一应变梯度在相对于衬底的平面外方向上静态偏转谐振器的释放部分。 谐振器包括锚定到基板的第一电极。 第一电极包括第一电极的释放部分的第二应变梯度。 第一电极被配置为以改变谐振器和第一电极之间的相对的位移量的第一模式静电驱动谐振器。 谐振器可以包括锚定到衬底的谐振器锚。 第一电极可以包括锚固到靠近谐振器锚的衬底的电极锚。 电极锚定件可以相对于谐振器锚固件定位，以基本上使谐振器相对于电极的动态位移与基板的变化相分离。

公开(公告)号：US08629739B2

公开(公告)日：2014-01-14

申请号：US13599240

申请日：2012-08-30

Applicant: Emmanuel P. Quevy ,  David H. Bernstein ,  Mehrnaz Motiee

Inventor： Emmanuel P. Quevy ,  David H. Bernstein ,  Mehrnaz Motiee

IPC: H03H9/24 ,  H03H3/007 ,  H01L21/00

CPC classification number: H03H9/2457 ,  H03H3/0072 ,  H03H3/0076 ,  H03H9/02409 ,  H03H9/2463 ,  H03H2009/02299 ,  H03H2009/02307 ,  H03H2009/0233 ,  H03H2009/02472 ,  H03H2009/02511 ,  H03H2009/02519

Abstract: A method of forming a microelectromechanical systems (MEMS) device includes forming an electrode on a substrate. The method includes forming a structural layer on the substrate. The structural layer is disposed about a perimeter of the electrode and has a residual film stress gradient. The method includes releasing the structural layer to form a resonator coupled to the substrate. The residual film stress gradient deflects a first portion of the resonator out of a plane defined by a surface of the electrode.

Abstract translation: 形成微机电系统（MEMS）器件的方法包括在衬底上形成电极。 该方法包括在衬底上形成结构层。 结构层围绕电极的周边设置并具有残余膜应力梯度。 该方法包括释放结构层以形成耦合到衬底的谐振器。 残余膜应力梯度将谐振器的第一部分偏离由电极表面限定的平面。

公开(公告)号：US08456252B2

公开(公告)日：2013-06-04

申请号：US13242602

申请日：2011-09-23

Applicant: Emmanuel P. Quevy

Inventor： Emmanuel P. Quevy

IPC: H03B5/30 ,  H03H9/46 ,  H04B1/26

CPC classification number: H03H9/2426 ,  H03B21/01 ,  H03H9/02377 ,  H03H9/2436 ,  H03H2009/2442

Abstract: A dual in-situ mixing approach for extended tuning range of resonators. In one embodiment, a dual in-situ mixing device tunes an input radio-frequency (RF) signal using a first mixer, a resonator body, and a second mixer. In one embodiment, the first mixer is coupled to receive the input RF signal and a local oscillator signal. The resonator body receives the output of the first mixer, and the second mixer is coupled to receive the output of the resonator body and the local oscillator signal to provide a tuned output RF signal as a function of the frequency of local oscillator signal.

Abstract translation: 用于扩展谐振器调谐范围的双位置混合方法。 在一个实施例中，双原位混合装置使用第一混频器，谐振器本体和第二混频器来调谐输入射频（RF）信号。 在一个实施例中，第一混频器被耦合以接收输入RF信号和本地振荡器信号。 谐振器主体接收第一混频器的输出，并且第二混频器被耦合以接收谐振器主体的输出和本地振荡器信号，以提供作为本地振荡器信号的频率的函数的调谐输出RF信号。

公开(公告)号：US20130002244A1

公开(公告)日：2013-01-03

申请号：US13174417

申请日：2011-06-30

Applicant: Emmanuel P. Quevy

Inventor： Emmanuel P. Quevy

IPC: G01R33/02

CPC classification number: G01R33/0286

Abstract: A magnetic sensor utilizes a MEMS device that has at least one vibrating member and at least one conductive path integral with the vibrating member so that a current flows along the vibrating member and in the presence of a magnetic field interaction of the magnetic field and the point charges in the current on the conductive path due to the Lorentz force causes a change in vibration of the vibrating member. That change can be used to provide a measure of the magnetic field.

Abstract translation: 磁传感器利用具有至少一个振动构件和至少一个与振动构件成一体的导电路径的MEMS装置，使得电流沿着振动构件流动，并且在存在磁场和点的磁场相互作用的情况下 由于洛伦兹力导致的导电路径上的电流的电荷导致振动构件的振动的变化。 该变化可用于提供磁场的测量。

公开(公告)号：US08313970B2

公开(公告)日：2012-11-20

申请号：US13017892

申请日：2011-01-31

Applicant: Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

Inventor： Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

IPC: H01L21/00

CPC classification number: B81C1/00293 ,  B81B7/02 ,  B81C1/00246 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0721 ,  B81C2203/0735 ,  B81C2203/0771

Abstract: Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

Abstract translation: 用于MEMS和微电子等器件封装的低温多层平面微型壳体。 微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。 密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。 在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

公开(公告)号：US20110260810A1

公开(公告)日：2011-10-27

申请号：US13173432

申请日：2011-06-30

Applicant: Emmanuel P. Quevy ,  David H. Bernstein ,  Mehrnaz Motiee

Inventor： Emmanuel P. Quevy ,  David H. Bernstein ,  Mehrnaz Motiee

IPC: H03H9/24

CPC classification number: H03H9/2457 ,  H03H3/0072 ,  H03H3/0076 ,  H03H9/02409 ,  H03H9/2463 ,  H03H2009/02299 ,  H03H2009/02307 ,  H03H2009/0233 ,  H03H2009/02472 ,  H03H2009/02511 ,  H03H2009/02519

Abstract: A microelectromechanical systems (MEMS) device includes a tuning electrode, a drive electrode, and a resonator. The resonator is anchored to a substrate and is configured to resonate in response to a signal on the drive electrode. The MEMS device includes a tuning plate coupled to the resonator and positioned above the tuning electrode. The tuning plate is configured to adjust a resonant frequency of the resonator in response to a voltage difference between the resonator and the tuning electrode. In at least one embodiment of the MEMS device, the tuning plate and the tuning electrode are configured to adjust the resonant frequency of the resonator substantially independent of the signal on the drive electrode.

Abstract translation: 微机电系统（MEMS）装置包括调谐电极，驱动电极和谐振器。 谐振器被锚固到衬底并且被配置为响应于驱动电极上的信号而谐振。 MEMS器件包括耦合到谐振器并且定位在调谐电极上方的调谐板。 调谐板被配置为响应谐振器和调谐电极之间的电压差来调节谐振器的谐振频率。 在MEMS器件的至少一个实施例中，调谐板和调谐电极被配置为基本上独立于驱动电极上的信号来调节谐振器的谐振频率。

公开(公告)号：US20110210797A1

公开(公告)日：2011-09-01

申请号：US13068117

申请日：2011-05-03

Applicant: Emmanuel P. Quevy ,  Manu Seth

Inventor： Emmanuel P. Quevy ,  Manu Seth

IPC: H03B28/00

CPC classification number: H03L1/022 ,  H03L7/085 ,  H03L7/16

Abstract: An apparatus and a method for compensating for a mismatch in temperature coefficients of two oscillator frequencies to match a desired frequency ratio between the two oscillator frequencies over a temperature range. In one embodiment of a temperature sensor, first and second oscillators of different temperature characteristics are coupled to a differential frequency discriminator (DFD) circuit. The DFD circuit compensates for the different characteristics in order to match a frequency difference between the first and second frequencies over a temperature range.

公开(公告)号：US07999635B1

公开(公告)日：2011-08-16

申请号：US12182082

申请日：2008-07-29

Applicant: Emmanuel P. Quevy ,  David A. Bernstein ,  Mehrnaz Motiee

Inventor： Emmanuel P. Quevy ,  David A. Bernstein ,  Mehrnaz Motiee

IPC: H03H9/24 ,  H03H9/125 ,  H03H9/46

CPC classification number: H03H9/2457 ,  H03H3/0072 ,  H03H3/0076 ,  H03H9/02409 ,  H03H9/2463 ,  H03H2009/02299 ,  H03H2009/02307 ,  H03H2009/0233 ,  H03H2009/02472 ,  H03H2009/02511 ,  H03H2009/02519

Abstract: A residual stress gradient in a structural layer is employed to form a resonator deflected out of plane when at rest and the resulting strain gradient is utilized in out-of-plane transduction. Use of the strain gradient enables out-of-plane (e.g., vertical) transduction without yield and reliability problems due to stiction (e.g., the sticking of the resonator to the substrate) when the resonator is driven by an electrode to dynamically deflect out-of-plane. In particular embodiments, out-of-plane transduction is utilized to achieve better transduction efficiency as compared to lateral resonator designs of similar linear dimensions (i.e. footprint) results in a lower motional resistance.

Abstract translation: 采用结构层中的残余应力梯度来形成在静止时偏离平面的共振器，并将所得到的应变梯度用于平面外转导。 当谐振器被电极驱动时，使用应变梯度可以实现平面外（例如垂直）转换，而不会由于静电（例如，将谐振器粘附到基板上）而产生屈服和可靠性问题， 的飞机。 在特定实施例中，与具有类似线性尺寸（即占地面积）导致较低运动阻力的横向谐振器设计相比，利用面外换能获得更好的换能效率。