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公开(公告)号：US20170069397A1
公开(公告)日：2017-03-09
申请号：US15356223
申请日：2016-11-18
Applicant: Everspin Technologies, Inc.
Inventor： Thomas Andre , Jon Slaughter , Dimitri Houssameddine , Syed M. Alam
CPC classification number: G11C29/50 , G06F11/08 , G06F11/1048 , G11C11/1673 , G11C2029/0411
Abstract: In some examples, a memory device may be configured to store data in either an original or an inverted state based at least in part on a state associated with one or more shorted bit cells. For instance, the memory device may be configured to identify a shorted bit cell within a memory array and to store the data in the memory array, such that a state of the data bit stored in the shorted bit cell matches the state associated with the shorted bit cell.
Abstract translation: 在一些示例中，存储器设备可以被配置为至少部分地基于与一个或多个短路位单元相关联的状态来存储处于原始或反相状态的数据。 例如，存储器设备可以被配置为识别存储器阵列内的短路位单元并且将数据存储在存储器阵列中，使得存储在短路位单元中的数据位的状态与短路相关联的状态匹配 位单元格。
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公开(公告)号：US09502089B2
公开(公告)日：2016-11-22
申请号：US14502287
申请日：2014-09-30
Applicant: Everspin Technologies, Inc.
Inventor： Thomas Andre , Jon Slaughter , Dimitri Houssameddine , Syed M. Alam
CPC classification number: G11C29/50 , G06F11/08 , G06F11/1048 , G11C11/1673 , G11C2029/0411
Abstract: In some examples, a memory device may be configured to store data in either an original or an inverted state based at least in part on a state associated with one or more shorted bit cells. For instance, the memory device may be configured to identify a shorted bit cell within a memory array and to store the data in the memory array, such that a state of the data bit stored in the shorted bit cell matches the state associated with the shorted bit cell.
Abstract translation: 在一些示例中，存储器设备可以被配置为至少部分地基于与一个或多个短路位单元相关联的状态来存储处于原始或反相状态的数据。 例如，存储器设备可以被配置为识别存储器阵列内的短路位单元并且将数据存储在存储器阵列中，使得存储在短路位单元中的数据位的状态与短路相关联的状态匹配 位单元格。
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公开(公告)号：USRE46180E1
公开(公告)日：2016-10-18
申请号：US14638583
申请日：2015-03-04
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Phillip Mather , Jon Slaughter , Nicholas Rizzo
CPC classification number: H01L27/22 , B82Y25/00 , G01R33/093 , H01L43/08
Abstract: Three bridge circuits (101, 111, 121), each include magnetoresistive sensors coupled as a Wheatstone bridge (100) to sense a magnetic field (160) in three orthogonal directions (110, 120, 130) that are set with a single pinning material deposition and bulk wafer setting procedure. One of the three bridge circuits (121) includes a first magnetoresistive sensor (141) comprising a first sensing element (122) disposed on a pinned layer (126), the first sensing element (122) having first and second edges and first and second sides, and a first flux guide (132) disposed non-parallel to the first side of the substrate and having an end that is proximate to the first edge and on the first side of the first sensing element (122). An optional second flux guide (136) may be disposed non-parallel to the first side of the substrate and having an end that is proximate to the second edge and the second side of the first sensing element (122).
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公开(公告)号：US20160180911A1
公开(公告)日：2016-06-23
申请号：US15057761
申请日：2016-03-01
Applicant: Everspin Technologies, Inc.
Inventor： Michael Schneider , Dimitri Houssameddine , Jon Slaughter
IPC: G11C11/16
CPC classification number: G11C11/1675 , G11C11/1673
Abstract: Circuitry and methods provide an increased tunnel barrier endurance (lifetime) previously shortened by dielectric breakdown by providing a charging pulses of opposite polarity in comparison with write pulses. The charging pulse of opposite polarity may comprise equal or different width and amplitude than that of the write pulse, may be applied with each write pulse or a series of write pulses, and may be applied prior to or subsequent to the write pulse. A register is also used to keep track of the read pulse polarity such that read pulses of alternating polarity can be used in reading operations.
Abstract translation: 电路和方法通过提供与写入脉冲相比极性相反的充电脉冲，提供先前通过电介质击穿缩短的隧道势垒耐力（寿命）。 相反极性的充电脉冲可以包括与写入脉冲相同或不同的宽度和幅度，可以用每个写入脉冲或一系列写入脉冲施加，并且可以在写入脉冲之前或之后施加。 寄存器还用于跟踪读取脉冲极性，使得可以在读取操作中使用交替极性的读取脉冲。
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公开(公告)号：US09276200B2
公开(公告)日：2016-03-01
申请号：US14521213
申请日：2014-10-22
Applicant: Everspin Technologies, Inc.
Inventor： Phillip Mather , Jon Slaughter , Nicholas Rizzo
CPC classification number: H01L43/02 , G01R33/098 , H01L27/22 , H01L43/08 , H01L43/12
Abstract: A magnetic sensor includes a plurality of groups, each group comprising a plurality of magnetic tunnel junction (MTJ) devices having a plurality of conductors configured to couple the MTJ devices within one group in parallel and the groups in series enabling independent optimization of the material resistance area (RA) of the MTJ and setting total device resistance so that the total bridge resistance is not so high that Johnson noise becomes a signal limiting concern, and yet not so low that CMOS elements may diminish the read signal. Alternatively, the magnetic tunnel junction devices within each of at least two groups in series and the at least two groups in parallel resulting in the individual configuration of the electrical connection path and the magnetic reference direction of the reference layer, leading to independent optimization of both functions, and more freedom in device design and layout. The X and Y pitch of the sense elements are arranged such that the line segment that stabilizes, for example, the right side of one sense element; also stabilizes the left side of the adjacent sense element.
Abstract translation: 磁传感器包括多个组，每个组包括多个磁隧道结（MTJ）装置，其具有多个导体，其被配置成并联连接一组内的MTJ装置，并且该组可串联实现材料电阻的独立优化 面积（RA），并设置总的器件电阻，使得总的桥接电阻不是很高，以至于Johnson噪声成为限制信号的关键，而不是那么低，使得CMOS元件可能会削弱读取信号。 或者，串联的至少两组中的每一个中的磁隧道结装置和并联的至少两个组，导致电连接路径的单独配置和参考层的磁参考方向，导致两者的独立优化 功能，以及更多设备设计和布局自由。 感测元件的X和Y间距被布置成使得例如稳定一个感测元件的右侧的线段; 也稳定了相邻感测元件的左侧。
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Patent Agency Ranking
公开(公告)号：US09269891B2
公开(公告)日：2016-02-23
申请号：US13972637
申请日：2013-08-21
Applicant: EverSpin Technologies, Inc.
Inventor： Renu Whig , Philip Mather , Kenneth Smith , Sanjeev Aggarwal , Jon Slaughter , Nicholas Rizzo
CPC classification number: H01L43/12 , B82Y25/00 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08
Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
Abstract translation: 半导体工艺集成了三个桥接电路，每个电路包括在单个芯片上作为惠斯登电桥耦合的磁阻传感器，以在三个正交方向上感测磁场。 该过程包括形成磁阻传感器的各种沉积和蚀刻步骤以及在三个桥接电路中的一个上的多个通量引导器，用于将“Z”轴磁场传送到在XY平面中定向的传感器上。
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37.发明授权公开(公告)号：US09229070B2
公开(公告)日：2016-01-05
申请号：US14533842
申请日：2014-11-05
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Lianjun Liu , Philip Mather , Jon Slaughter
CPC classification number: G01R33/0029 , G01R33/0041 , G01R33/04 , G01R33/098
Abstract: A magnitude and direction of at least one of a reset current and a second stabilization current (that produces a reset field and a second stabilization field, respectively) is determined that, when applied to an array of magnetic sense elements, minimizes the total required stabilization field and reset field during the operation of the magnetic sensor and the measurement of the external field. Therefore, the low field sensor operates optimally (with the highest sensitivity and the lowest power consumption) around the fixed external field operating point. The fixed external field is created by other components in the sensor device housing (such as speaker magnets) which have a high but static field with respect to the low (earth's) magnetic field that describes orientation information.
Abstract translation: 确定复位电流和第二稳定电流（分别产生复位场和第二稳定场）中的至少一个的幅度和方向，当应用于磁感测元件的阵列时，使总要求的稳定性最小化 在磁传感器运行期间的场和复位场以及外场测量。 因此，低场传感器在固定的外场操作点周围最佳地运行（具有最高的灵敏度和最低的功耗）。 固定的外部场是由传感器装置外壳（例如扬声器磁体）中的其他部件产生的，这些部件相对于描述取向信息的低（地球）磁场具有高但静止的场。
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公开(公告)号：USRE50331E1
公开(公告)日：2025-03-04
申请号：US17658470
申请日：2022-04-08
Applicant: Everspin Technologies, Inc.
Inventor： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
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公开(公告)号：US10825500B2
公开(公告)日：2020-11-03
申请号：US16286793
申请日：2019-02-27
Applicant: Everspin Technologies, Inc.
Inventor： Han-Jong Chia , Sumio Ikegawa , Michael Tran , Jon Slaughter
Abstract: A magnetoresistive memory device that stores data in the synthetic antiferromagnet (SAF) included in each spin-torque memory cell provides for more robust data storage. In normal operation, the memory cells use the free portion of the memory cell for data storage. Techniques for storing data in the reference portions of memory cells are presented, where an unbalanced SAF that includes ferromagnetic layers having different magnetic moments is used to lower the switching barrier for the SAF and allow for writing data values to the SAF using lower currents and magnetic fields than would be required for a balanced SAF.
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公开(公告)号：US10794968B2
公开(公告)日：2020-10-06
申请号：US15685085
申请日：2017-08-24
Applicant: Everspin Technologies, Inc.
Inventor： Jon Slaughter
Abstract: A magnetic field sensor that includes a differential bridge in which each path of the bridge includes a first type of magnetic field sensing device and a second type of magnetic field sensing device. The first and second types of magnetic field sensing devices differ in the magnetic moment imbalance present in the synthetic antiferromagnets (SAFs) included in their reference layers such that that different types of devices produce a different response to perpendicular magnetic fields, but the same response to in-plane magnetic fields. Such different magnetic moment imbalances in the SAFs of magnetic field sensing devices included in a bridge allow for accurate sensing of perpendicular magnetic fields in a differential manner that also cancels out interference from in-plane fields. Techniques for producing such magnetic field sensing devices on an integrated circuit are also presented. Moreover, the free layers within the magnetic field sensing devices can be adjusted in terms of their sensitivity range and level of sensitivity by manipulating the kink filed (Hk) for those free layers.
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