公开(公告)号：US09458343B2

公开(公告)日：2016-10-04

申请号：US14859794

申请日：2015-09-21

Applicant: FUJIFILM Corporation

Inventor： Hideaki Tsubaki

IPC: G03F7/004 ,  G03F7/32 ,  C09D127/12 ,  G03F7/039 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027 ,  G03F7/16

CPC classification number: C09D127/12 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/0274 ,  H01L21/0275

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

公开(公告)号：US09323153B2

公开(公告)日：2016-04-26

申请号：US14478135

申请日：2014-09-05

Applicant: FUJIFILM Corporation

Inventor： Shuji Hirano ,  Hiroo Takizawa ,  Hideaki Tsubaki

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/30 ,  G03F7/09 ,  C07D235/12 ,  C07D235/16 ,  C07D235/22 ,  C07D235/26 ,  C07D235/28 ,  G03F7/11 ,  G03F7/32 ,  G03F7/027 ,  G03F7/038

CPC classification number: G03F7/0397 ,  C07D235/12 ,  C07D235/16 ,  C07D235/22 ,  C07D235/26 ,  C07D235/28 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/09 ,  G03F7/11 ,  G03F7/2002 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/325

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition in the present invention contains a nitrogen-containing compound (N) which is represented by the following general formula (N1): wherein, in the general formula (N1), X represents a group including a hetero atom; L represents a single bond or an alkylene group; R2 represents a substituent, in the case where a plurality of R2's are present, they may be the same as or different from each other and a plurality of R2's may be bonded to each other to form a ring; R3 represents a hydrogen atom or a substituent; and n represents an integer of 0 to 4.

Abstract translation: 本发明的光化射线敏感性或辐射敏感性树脂组合物含有下述通式（N1）表示的含氮化合物（N）：其中，在通式（N1）中，X表示 包括杂原子; L表示单键或亚烷基; R2表示取代基，在存在多个R 2的情况下，它们可以相同或不同，并且多个R 2可以彼此键合形成环; R3表示氢原子或取代基; n表示0〜4的整数。

公开(公告)号：US09323150B2

公开(公告)日：2016-04-26

申请号：US14229210

申请日：2014-03-28

Applicant: FUJIFILM Corporation

Inventor： Shuji Hirano ,  Hiroo Takizawa ,  Hideaki Tsubaki

IPC: G03F7/004 ,  G03F7/038 ,  C08F212/08 ,  C08F12/08 ,  C08F220/28 ,  G03F7/039 ,  G03F7/075 ,  G03F7/11 ,  G03F7/20

CPC classification number: G03F7/0388 ,  C08F12/08 ,  C08F212/08 ,  C08F220/28 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/11 ,  G03F7/2041

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (Aa) containing at least one repeating unit (Aa1) derived from monomers of general formula (aa1-1) below and at least one repeating unit (Aa2) derived from monomers of general formula (aa2-1) below and comprising a resin (Ab) that when acted on by an acid, changes its alkali solubility.

Abstract translation: 本发明提供一种光化学射线或辐射敏感性树脂组合物，其包含含有至少一种衍生自下述通式（aa1-1）的单体的重复单元（Aa1）的树脂（Aa）和至少一种衍生自 来自下述通式（aa2-1）的单体，并且包含当被酸作用时改变其碱溶解度的树脂（Ab）。

公开(公告)号：US09223215B2

公开(公告)日：2015-12-29

申请号：US14289718

申请日：2014-05-29

Applicant: FUJIFILM Corporation

Inventor： Natsumi Yokokawa ,  Takeshi Kawabata ,  Hiroo Takizawa ,  Hideaki Tsubaki ,  Shuji Hirano

IPC: G03F7/004 ,  G03F7/038 ,  C09D125/18 ,  C08F212/00 ,  C08F222/10 ,  C08F8/00 ,  G03F7/039

CPC classification number: G03F7/0388 ,  C08F8/00 ,  C08F212/00 ,  C08F222/10 ,  C09D125/18 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive composition comprising (P) a compound having a phenolic hydroxyl group and a group formed by substituting for the hydrogen atom in a phenolic hydroxyl group by a group represented by the specific formula, a resist film formed using the specific actinic ray-sensitive or radiation-sensitive composition, a pattern forming method containing steps of exposing and developing the resist film, a manufacturing method of an electronic device, containing the pattern forming method, and an electronic device manufactured by the specific manufacturing method of an electronic device.

Abstract translation: 提供了光化射线敏感或辐射敏感性组合物，其包含（P）具有酚羟基的化合物和通过用特定式表示的基团取代酚羟基中的氢原子形成的基团，抗蚀剂 使用特定的光化射线敏感或辐射敏感组合物形成的膜，包含曝光和显影抗蚀剂膜的步骤的图案形成方法，包含图案形成方法的电子器件的制造方法和由 电子设备的具体制造方法。

公开(公告)号：US09188865B2

公开(公告)日：2015-11-17

申请号：US14476936

申请日：2014-09-04

Applicant: FUJIFILM CORPORATION

Inventor： Natsumi Yokokawa ,  Hiroo Takizawa ,  Hideaki Tsubaki

IPC: G03F7/039 ,  G03F7/038 ,  G03F7/004 ,  G03F7/30 ,  C08F212/14 ,  C08F12/24 ,  C08F212/32 ,  C08F220/18 ,  C08F220/20 ,  C08F232/08 ,  C08F8/02 ,  C08F8/12 ,  C08F8/14 ,  C08F8/34 ,  C08F8/36 ,  C08F220/30 ,  C08F12/20 ,  C08F12/30

CPC classification number: G03F7/0392 ,  C08F8/02 ,  C08F8/12 ,  C08F8/14 ,  C08F8/34 ,  C08F8/36 ,  C08F12/20 ,  C08F12/24 ,  C08F12/30 ,  C08F212/14 ,  C08F212/32 ,  C08F216/10 ,  C08F216/38 ,  C08F220/18 ,  C08F220/20 ,  C08F220/30 ,  C08F232/08 ,  C08F2800/10 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/30 ,  G03F7/322 ,  C08F112/14 ,  C08F120/20 ,  C08F2220/283 ,  C08F2220/382 ,  C08F2220/305 ,  C08F2220/301

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit represented by the following Formula (A) and having at least two of a repeating unit represented by the following Formula (B), a repeating unit represented by the following Formula (C), a repeating unit represented by the following Formula (D) and a repeating unit represented by the following Formula (E).

Abstract translation: 提供了含有具有由下式（A）表示的重复单元并具有下述式（B）表示的重复单元中的至少2种的树脂（P）的光化射线敏感性或辐射敏感性树脂组合物， 由下式（C）表示的重复单元，由下式（D）表示的重复单元和由下式（E）表示的重复单元。

公开(公告)号：US08895225B2

公开(公告)日：2014-11-25

申请号：US14083816

申请日：2013-11-19

Applicant: FUJIFILM Corporation

Inventor： Hideaki Tsubaki

IPC: G03F7/004 ,  G03F7/26 ,  G03F7/11 ,  G03B27/32 ,  G03B27/52

CPC classification number: C09D127/12 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/0274 ,  H01L21/0275

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

Abstract translation: 一种形成图案的方法包括（a）用负显影用抗蚀剂组合物涂覆基材以形成抗蚀剂膜，其中抗蚀剂组合物含有能够通过酸的作用而增加极性的树脂，并变得更可溶于阳性 显影剂，并且在用光化射线或辐射照射时不太可溶于负显影剂，（b）在形成抗蚀剂膜之后和在曝光抗蚀剂膜之前，用保护膜组合物在抗蚀剂膜上形成保护膜，（c） 通过浸渍介质形成抗蚀膜，（d）用负极显影剂进行显影。