公开(公告)号：US20080230792A1

公开(公告)日：2008-09-25

申请号：US12063978

申请日：2006-09-30

申请人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang

发明人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

摘要： One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.

摘要翻译： 本发明的一个实施例提供了一种半导体发光器件，其包括：上包层; 下包层; 在上和下包层之间的有源层; 形成到上包层的导电路径的上欧姆接触层; 以及形成下部包层的导电路径的下欧姆接触层。 下欧姆接触层具有与上欧姆接触层的形状基本上不同的形状，从而当施加电压时，载流子转移离开有源层的基本上在上欧姆接触层下方的部分 到上，下欧姆接触层。

公开(公告)号：US20080166582A1

公开(公告)日：2008-07-10

申请号：US11713423

申请日：2007-03-02

申请人： Chuanbing Xiong ,  Wenqing Fang ,  Li Wang ,  Guping Wang ,  Fengyi Jiang

发明人： Chuanbing Xiong ,  Wenqing Fang ,  Li Wang ,  Guping Wang ,  Fengyi Jiang

IPC分类号： H01L29/12 ,  H01L21/02 ,  H01L21/311

CPC分类号： C23C14/541 ,  C23C14/0005 ,  C23C14/18 ,  C23C14/505 ,  Y10S117/917 ,  Y10T428/12382 ,  Y10T428/12528

摘要： One embodiment of the present invention provides a method for fabricating a high-quality metal substrate. During operation, the method involves cleaning a polished single-crystal substrate. A metal structure of a predetermined thickness is then formed on a polished surface of the single-crystal substrate. The method further involves removing the single-crystal substrate from the metal structure without damaging the metal structure to obtain the high-quality metal substrate, wherein one surface of the metal substrate is a high-quality metal surface which preserves the smoothness and flatness of the polished surface of the single-crystal substrate.

摘要翻译： 本发明的一个实施例提供了制造高品质金属基板的方法。 在操作过程中，该方法包括清洗抛光的单晶衬底。 然后在单晶衬底的抛光表面上形成预定厚度的金属结构。 该方法还包括从金属结构中去除单晶衬底而不损坏金属结构以获得高质量的金属衬底，其中金属衬底的一个表面是高质量的金属表面，其保持了平滑度和平坦度 抛光表面的单晶基板。

公开(公告)号：US07977663B2

公开(公告)日：2011-07-12

申请号：US12160040

申请日：2008-03-26

申请人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

发明人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

IPC分类号： H01L33/04

CPC分类号： H01L33/0079 ,  H01L33/405

摘要： A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer.

摘要翻译： 半导体发光器件包括在导电衬底上的多层半导体结构。 多层半导体结构包括位于导电衬底之上的第一掺杂半导体层，位于第一掺杂半导体层之上的第二掺杂半导体层和/或位于第一和第二掺杂半导体层之间的MQW有源层。 该器件还包括在第一掺杂半导体层和导电衬底之间的反射欧姆接触金属层，其包括Ag和Ni，Ru，Rh，Pd，Au，Os，Ir和Pt中的至少一种; 加上Zn，Mg Be和Cd中的至少一种; 和多个：W，Cu，Fe，Ti，Ta和Cr。 该器件还包括在反射欧姆接触金属层和导电基底之间的结合层，耦合到导电基底的第一电极和耦合到第二掺杂半导体层的第二电极。

公开(公告)号：US07943942B2

公开(公告)日：2011-05-17

申请号：US12093508

申请日：2008-03-25

申请人： Fengyi Jiang ,  Junlin Liu ,  Li Wang

发明人： Fengyi Jiang ,  Junlin Liu ,  Li Wang

IPC分类号： H01L21/00

CPC分类号： H01L33/44 ,  H01L21/6835 ,  H01L33/0079 ,  H01L33/405 ,  H01L2221/6835 ,  H01L2221/68359

摘要： A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and the horizontal surface of the second doped layer.

摘要翻译： 发光器件包括衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂层上方的第二掺杂半导体层和位于第一和第二掺杂层之间的多量子阱（MQW）有源层 掺杂层。 该器件还包括耦合到第一掺杂层的第一电极和位于第一电极和第一掺杂层之间的除欧姆接触区域之外的区域中的第一钝化层。 第一钝化层使第一电极与第一掺杂层的边缘基本绝缘，从而减少表面复合。 该器件还包括耦合到第二掺杂层的第二电极和基本上覆盖第一和第二掺杂层，MQW有源层和第二掺杂层的水平表面的侧壁的第二钝化层。

公开(公告)号：US20110049540A1

公开(公告)日：2011-03-03

申请号：US12160044

申请日：2008-03-26

申请人： Li Wang ,  Fengyi Jiang

发明人： Li Wang ,  Fengyi Jiang

IPC分类号： H01L33/32 ,  H01L21/18

CPC分类号： H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： One embodiment of the present invention provides a method for fabricating light-emitting diodes (LEDs). The method includes fabricating an InGaAlN-based multilayer LED structure on a conductive substrate. The method further includes etching grooves of a predetermined pattern through the active region of the multilayer LED structure. The grooves separate a light-emitting region from non-light-emitting regions. In addition, the method includes depositing electrode material on the light-emitting and non-light-emitting regions, thereby creating an electrode. Furthermore, the method includes depositing a passivation layer covering the light-emitting and non-light-emitting regions. Moreover, the method includes removing the passivation layer on the electrode to allow the non-light-emitting regions which are covered with the electrode material and the passivation layer to be higher than the light-emitting region and the electrode, thereby protecting the light-emitting region from contact with test equipment.

摘要翻译： 本发明的一个实施例提供一种制造发光二极管（LED）的方法。 该方法包括在导电基板上制造基于InGaAlN的多层LED结构。 该方法还包括通过多层LED结构的有源区蚀刻预定图案的凹槽。 凹槽将发光区域与非发光区域分开。 此外，该方法包括在发光和非发光区域上沉积电极材料，从而形成电极。 此外，该方法包括沉积覆盖发光和非发光区域的钝化层。 此外，该方法包括去除电极上的钝化层，以使被电极材料和钝化层覆盖的非发光区域比发光区域和电极高，从而保护发光区域， 发射区域与测试设备接触。

公开(公告)号：US20100207096A1

公开(公告)日：2010-08-19

申请号：US12093512

申请日：2008-03-26

申请人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

发明人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

IPC分类号： H01L33/32 ,  H01L33/04

CPC分类号： H01L33/405 ,  H01L33/0079

摘要： One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.

摘要翻译： 本发明的一个实施例提供一种在发光器件中制造高反射电极的方法。 在制造过程中，在生长衬底上制造多层半导体结构，其中多层半导体结构包括第一掺杂半导体层，第二掺杂半导体层和/或多量子阱（MQW）有源层。 该方法还包括以下操作：在第一掺杂半导体层上形成接触辅助金属层，退火多层结构以激活第一掺杂半导体层，去除接触辅助金属层，形成反射欧姆接触金属层 在所述第一掺杂半导体层上形成与所述反射欧姆接触金属层耦合的接合层，将所述多层结构接合到导电基板，去除所述生长衬底，形成耦合到所述导电衬底的第一电极，以及形成第二电极 在第二掺杂半导体层上。

公开(公告)号：US20120037883A1

公开(公告)日：2012-02-16

申请号：US13059388

申请日：2008-08-19

申请人： Fengyi Jiang ,  Li Wang ,  Junlin Liu ,  Yingwen Tang

发明人： Fengyi Jiang ,  Li Wang ,  Junlin Liu ,  Yingwen Tang

IPC分类号： H01L33/04

CPC分类号： H01L25/0753 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting device includes a conductive substrate (320), a multilayer semiconductor structure situated above the conductive substrate including a n-type doped semiconductor layer (308), a p-type doped semiconductor layer (312) situated above the n-type doped semiconductor layer (308), and a MQW active layer (310) situated between the p-type and n-type doped semiconductor layer (308,312). The multilayer semiconductor structure is divided by grooves (300) to form a plurality of independent light-emitting mesas (304,306). At least one light-emitting mesa (304,306) comprises a color conversion layer (324,326).

摘要翻译： 发光器件包括导电衬底（320），位于导电衬底上方的包括n型掺杂半导体层（308）的多层半导体结构，位于n型掺杂半导体层之上的p型掺杂半导体层（312） 掺杂半导体层（308）和位于p型和n型掺杂半导体层（308,312）之间的MQW有源层（310）。 多层半导体结构被凹槽（300）划分以形成多个独立的发光台面（304,306）。 至少一个发光台面（304,306）包括颜色转换层（324,326）。

公开(公告)号：US08044416B2

公开(公告)日：2011-10-25

申请号：US12093549

申请日：2008-03-25

申请人： Li Wang ,  Fengyi Jiang ,  Yingwen Tang ,  Junlin Liu

发明人： Li Wang ,  Fengyi Jiang ,  Yingwen Tang ,  Junlin Liu

IPC分类号： H01L33/30

CPC分类号： H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/44

摘要： One embodiment of the present invention provides a method for fabricating a high-power light-emitting diode (LED). The method includes etching grooves on a growth substrate, thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride (InGaAlN)-based LED multilayer structures on the mesas on the growth substrate, wherein a respective mesa supports a separate LED structure. In addition, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves. Moreover, the method includes creating conductive paths which couple a predetermined number of adjacent individual LEDs, thereby allowing the LEDs to share a common power supply and be powered simultaneously to form a high-power LED array.

摘要翻译： 本发明的一个实施例提供一种制造大功率发光二极管（LED）的方法。 该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。 该方法还包括在生长衬底上的台面上制造基于铟镓铝（InGaAlN）的LED多层结构，其中相应的台面支撑单独的LED结构。 此外，该方法包括将多层结构粘合到导电基底上。 该方法还包括去除生长底物。 此外，该方法包括在InGaAlN多层结构上沉积钝化层和电极层，其中钝化层覆盖槽的侧壁和底部。 此外，该方法包括产生耦合预定数量的相邻独立LED的导电路径，从而允许LED共享公共电源并且被同时供电以形成大功率LED阵列。

公开(公告)号：US20110140081A1

公开(公告)日：2011-06-16

申请号：US13059913

申请日：2008-08-19

申请人： Fengyi Jiang ,  Li Wang

发明人： Fengyi Jiang ,  Li Wang

IPC分类号： H01L33/06 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/44

摘要： A method for fabricating a semiconductor light-emitting device includes fabricating a multilayer semiconductor structure on a first substrate, wherein the multilayer semiconductor structure comprises a first doped semiconductor layer, an MQW active layer, a second doped semiconductor layer, and a first passivation layer. The method further involves patterning and etching part of the first passivation layer to expose the first doped semiconductor layer. A first electrode is then formed, which is coupled to the first doped semiconductor layer. Next, the multilayer structure is bonded to a second substrate; and the first substrate is removed. A second electrode is formed, which is coupled to the second doped semiconductor layer. Further, a second passivation layer is formed, which substantially covers the sidewalls of multilayer structure and part of the surface of the second doped semiconductor layer which is not covered by the second electrode.

摘要翻译： 一种制造半导体发光器件的方法包括在第一衬底上制造多层半导体结构，其中所述多层半导体结构包括第一掺杂半导体层，MQW有源层，第二掺杂半导体层和第一钝化层。 该方法还包括图案化和蚀刻第一钝化层的一部分以暴露第一掺杂半导体层。 然后形成第一电极，其耦合到第一掺杂半导体层。 接着，将多层结构体接合到第二基板上; 并且去除第一衬底。 形成第二电极，其耦合到第二掺杂半导体层。 此外，形成第二钝化层，其基本上覆盖多层结构的侧壁和第二掺杂半导体层的未被第二电极覆盖的部分表面。

公开(公告)号：US07829359B2

公开(公告)日：2010-11-09

申请号：US12093512

申请日：2008-03-26

申请人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

发明人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

IPC分类号： H01L21/00

CPC分类号： H01L33/405 ,  H01L33/0079

摘要： One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.

摘要翻译： 本发明的一个实施例提供一种在发光器件中制造高反射电极的方法。 在制造过程中，在生长衬底上制造多层半导体结构，其中多层半导体结构包括第一掺杂半导体层，第二掺杂半导体层和/或多量子阱（MQW）有源层。 该方法还包括以下操作：在第一掺杂半导体层上形成接触辅助金属层，退火多层结构以激活第一掺杂半导体层，去除接触辅助金属层，形成反射欧姆接触金属层 在所述第一掺杂半导体层上形成与所述反射欧姆接触金属层耦合的接合层，将所述多层结构接合到导电基板，去除所述生长衬底，形成耦合到所述导电衬底的第一电极，以及形成第二电极 在第二掺杂半导体层上。