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31.发明申请公开(公告)号：US20110183528A1
公开(公告)日：2011-07-28
申请号：US13069217
申请日：2011-03-22
申请人： Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
发明人： Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
IPC分类号： H01L21/318
CPC分类号： H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/0228 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SioxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,
摘要翻译： 低介电常数（k）薄膜，高k栅极硅酸盐，低温硅外延膜以及含有氮化硅（Si3N4），硅氧氮化物（SioxNy）等的薄膜的半导体器件的制造中形成含硅膜的硅前驱体， 和/或二氧化硅（SiO 2）。 本发明的前体适于在低温（例如，<500℃）的化学气相沉积工艺中使用，用于制造ULSI器件和器件结构。
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32.发明授权公开(公告)号：US07713346B2
公开(公告)日：2010-05-11
申请号：US12247120
申请日：2008-10-07
IPC分类号： C07F7/02
CPC分类号： H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02271 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要： This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,
摘要翻译： 本发明涉及通过用于制造ULSI器件和器件结构的低温（例如，<300℃）的化学气相沉积工艺形成含硅膜的硅前体组合物。 这种硅前体组合物包含至少一个完全被烷基氨基和/或二烷基氨基官能团取代的二烷基硅烷衍生物化合物。
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公开(公告)号：US20100068894A1
公开(公告)日：2010-03-18
申请号：US12578262
申请日：2009-10-13
申请人： Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
发明人： Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
CPC分类号： C07F7/10 , H01L21/02271
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
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34.发明申请COPPER (I) AMIDINATES AND GUANIDINATES, MIXED LIGAND COPPER COMPLEXES, AND COMPOSITIONS FOR CHEMICAL VAPOR DEPOSITION, ATOMIC LAYER DEPOSITION, AND RAPID VAPOR DEPOSITION OF COPPER 审中-公开铜（I）配体和配体，混合配体铜复合物，以及化学气相沉积，原子层沉积和COPPER的快速蒸气沉积的组合物公开(公告)号：US20090162550A1
公开(公告)日：2009-06-25
申请号：US12303250
申请日：2006-12-29
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Thomas M. Cameron , Jeffrey F. Roeder , Matthias Stender
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Thomas M. Cameron , Jeffrey F. Roeder , Matthias Stender
CPC分类号： C23C16/18 , C07C275/70
摘要： Copper (I) amidinate and copper (I) guanidinate precursors for forming copper thin films in the manufacture of microelectronic device articles, e.g., using chemical vapor deposition, atomic layer deposition, and rapid vapor deposition processes, as well as mixed ligand copper complexes suitable for such processes. Also described are solvent/additive compositions for copper precursors for CVD/ALD of copper metal films, which are highly advantageous for liquid delivery of such copper amidinates and copper guanidinates, as well as for other organocopper precursor compounds and complexes, e.g., copper isoureate complexes.
摘要翻译： 在微电子器件制品的制造中，例如使用化学气相沉积，原子层沉积和快速气相沉积工艺以及混合配体铜络合物合适的铜（I）脒和铜（I）胍形成铜薄膜的前体， 对于这样的过程。 还描述了用于铜金属膜的CVD / ALD的铜前体的溶剂/添加剂组合物，其对于这种铜脒酸盐和胍盐酸胍以及其它有机铜前体化合物和络合物的液体递送是非常有利的，例如铜异氰酸酯络合物 。
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35.发明申请公开(公告)号：US20080242880A1
公开(公告)日：2008-10-02
申请号：US12058751
申请日：2008-03-30
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder , Juan E. Dominguez , Adrien R. Lavoie , Harsono S. Simka
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder , Juan E. Dominguez , Adrien R. Lavoie , Harsono S. Simka
CPC分类号： C07F17/00 , C23C16/45553
摘要： Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).
摘要翻译： 用于在基底上沉积铜或含铜膜的铜前体，例如微电子器件衬底或其它表面。 前体包括各种类型的铜化合物，包括硼氢化铜，具有环戊二烯基型配体的铜化合物，具有环戊二烯基型的铜化合物和异氰化物配体，以及稳定的氢化铜。 这些前体可以固体或液体形式使用，以便形成用于与基底接触的前体蒸气，通过诸如化学气相沉积（CVD），原子层沉积（ALD）或快速蒸镀（数字式）技术形成沉积的铜 CVD）。
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公开(公告)号：US06660331B2
公开(公告)日：2003-12-09
申请号：US10010262
申请日：2001-12-07
IPC分类号： C23C1640
CPC分类号： C23C16/409 , C07F9/94 , Y10S427/101
摘要： A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.
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公开(公告)号：US08679894B2
公开(公告)日：2014-03-25
申请号：US13610928
申请日：2012-09-12
申请人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
发明人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
IPC分类号： H01L51/40
CPC分类号： H01L51/0002 , C07F7/30 , C23C16/305 , C23C16/45553
摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
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公开(公告)号：US20130005078A1
公开(公告)日：2013-01-03
申请号：US13610928
申请日：2012-09-12
申请人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
发明人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
IPC分类号： H01L51/30
CPC分类号： H01L51/0002 , C07F7/30 , C23C16/305 , C23C16/45553
摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
摘要翻译： 在基板上形成相变记忆材料的系统和方法，其中在温度低于350℃的条件下，在产生硫属元素化合物的沉积的条件下，在相变存储硫族化合物的前体与基板接触的基板上， 其接触通过化学气相沉积或原子层沉积进行。 描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。
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公开(公告)号：US08288198B2
公开(公告)日：2012-10-16
申请号：US12300459
申请日：2007-03-12
申请人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
发明人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
IPC分类号： H01L51/40
CPC分类号： H01L51/0002 , C07F7/30 , C23C16/305 , C23C16/45553
摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
摘要翻译： 一种用于在基板上形成相变记忆材料的系统和方法，其中在温度低于350℃的条件下，在产生硫属化物合金沉积的条件下，在温度低于350℃的条件下，基板与相变存储器硫族化合物的前体接触， 通过化学气相沉积或原子层沉积进行接触。 描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。
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40.发明申请公开(公告)号：US20110263100A1
公开(公告)日：2011-10-27
申请号：US13168979
申请日：2011-06-26
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L21/208
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译： 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。
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