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公开(公告)号：US06660331B2
公开(公告)日：2003-12-09
申请号：US10010262
申请日：2001-12-07
IPC分类号： C23C1640
CPC分类号： C23C16/409 , C07F9/94 , Y10S427/101
摘要： A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.
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2.发明授权MOCVD of SBT using toluene based solvent system for precursor delivery 失效SBT的MOCVD使用甲苯为基础的溶剂系统用于前体递送公开(公告)号：US06340386B1
公开(公告)日：2002-01-22
申请号：US09440235
申请日：1999-11-15
IPC分类号： C09K300
CPC分类号： C23C16/409 , C07F9/94 , Y10S427/101
摘要： A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.
摘要翻译： 用于液体输送MOCVD的溶剂组合物，其包含甲苯和路易斯碱，其中基于甲苯和路易斯碱的总体积，甲苯的存在浓度为约75-98体积％。 这样的溶剂组合物有用地用于溶解或悬浮其中的前体用于液体输送MOCVD，例如诸如SBT的铁电材料膜的MOCVD。
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3.发明授权公开(公告)号：US08802882B2
公开(公告)日：2014-08-12
申请号：US12862739
申请日：2010-08-24
申请人： Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
发明人： Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
IPC分类号： C07F7/10
CPC分类号： C07F7/10 , H01L21/02271
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
摘要翻译： 在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。
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4.发明授权公开(公告)号：US07887883B2
公开(公告)日：2011-02-15
申请号：US12777519
申请日：2010-05-11
CPC分类号： H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02271 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要： This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,
摘要翻译： 本发明涉及通过用于制造ULSI器件和器件结构的低温（例如，<300℃）的化学气相沉积工艺形成含硅膜的硅前体组合物。 这种硅前体组合物包含至少一个完全被烷基氨基和/或二烷基氨基官能团取代的二烷基硅烷衍生物化合物。
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5.发明授权公开(公告)号：US07786320B2
公开(公告)日：2010-08-31
申请号：US12464726
申请日：2009-05-12
申请人： Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
发明人： Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
IPC分类号： C07F7/02
CPC分类号： H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/0228 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,
摘要翻译： 半导体器件如低介电常数（k）薄膜，高k栅极硅酸盐，低温硅外延膜和含有氮化硅（Si 3 N 4），硅氧氮化物（SiO x N y）的膜的制造中的含硅膜的硅前体， 和/或二氧化硅（SiO 2）。 本发明的前体适于在低温（例如，<500℃）的化学气相沉积工艺中使用，用于制造ULSI器件和器件结构。
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6.发明授权公开(公告)号：US07781605B2
公开(公告)日：2010-08-24
申请号：US12578262
申请日：2009-10-13
申请人： Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
发明人： Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
IPC分类号： C07F7/10
CPC分类号： C07F7/10 , H01L21/02271
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
摘要翻译： 在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。
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7.发明申请公开(公告)号：US20070281476A1
公开(公告)日：2007-12-06
申请号：US11446339
申请日：2006-06-02
申请人： Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon , Valery M. Dubin , Harsono S. Simka , Joseph H. Han , Bryan C. Hendrix , Gregory T. Stauf , Jeffrey F. Roeder , Tiannu Chen , Chongying Xu , Thomas H. Baum
发明人： Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon , Valery M. Dubin , Harsono S. Simka , Joseph H. Han , Bryan C. Hendrix , Gregory T. Stauf , Jeffrey F. Roeder , Tiannu Chen , Chongying Xu , Thomas H. Baum
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/45525 , C23C16/45553 , C23C16/56
摘要： Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a thin conformal copper layer on a surface by utilizing a formation temperature below about 125 degrees Celsius.
摘要翻译： 描述了形成微电子结构的方法和相关结构。 那些方法可以包括通过利用低于约125摄氏度的地层温度在表面上形成薄的共形铜层。
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8.发明授权MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery 失效SBT的MOCVD使用四氢呋喃类溶剂体系进行前驱体交付公开(公告)号：US06511706B1
公开(公告)日：2003-01-28
申请号：US09441694
申请日：1999-11-16
申请人： Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers-Christos , Jeffrey F. Roeder , Witold Paw
发明人： Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers-Christos , Jeffrey F. Roeder , Witold Paw
IPC分类号： C23C1640
CPC分类号： G02B6/02 , C07F9/94 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , H01L39/2441
摘要： A precursor composition useful for liquid delivery MOCVD, including SBT precursors dissolved in a solvent system containing tetrahydrofuran. The associated liquid delivery MOCVD process may be carried out with vaporization of the precursor composition on a porous vaporization element having an average pore diameter in the range of from about 50 to about 200 micrometers, with the resultant precursor vapor being admixed with a carrier gas to achieve high efficiency formation of SBT films.
摘要翻译： 用于液体输送MOCVD的前体组合物，包括溶解在含有四氢呋喃的溶剂体系中的SBT前体。 相关的液体输送MOCVD方法可以通过前体组合物在平均孔径在约50至约200微米范围内的多孔蒸发元件上蒸发来进行，所得前体蒸气与载气混合， 实现SBT膜的高效率形成。
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9.发明授权Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides 有权使用Bi alcoxides制备铁电薄膜的低温CVD工艺公开(公告)号：US06500489B1
公开(公告)日：2002-12-31
申请号：US09208541
申请日：1998-12-09
申请人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
发明人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
IPC分类号： C23C1640
CPC分类号： C23C16/409 , C23C16/40 , C23C16/407 , C23C16/4485 , C23C16/56 , H01L21/31691
摘要： Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alkoxide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
摘要翻译： 化学气相沉积用于通过在衬底的表面分解这些氧化物的前体，在加热的衬底上形成Bi氧化物，Sr氧化物和Ta氧化物的膜。 Bi氧化物的前体是包含至少一个烷氧基的Bi络合物，并在低于450℃的温度下分解和沉积。通过低温CVD获得的Bi，Sr和Ta氧化物的膜主要是非 - 铁电体，但可以通过随后的加热工艺转化成铁电体膜。
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10.发明授权Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates 失效使用Bi羧酸盐制备铁电薄膜的低温CVD工艺公开(公告)号：US06180420B2
公开(公告)日：2001-01-30
申请号：US09208543
申请日：1998-12-09
申请人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
发明人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , C23C16/40 , C23C16/407 , C23C16/56 , C30B25/02 , C30B29/16 , H01L28/55
摘要： Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one carboxylate group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
摘要翻译： 化学气相沉积用于通过在衬底的表面分解这些氧化物的前体，在加热的衬底上形成Bi氧化物，Sr氧化物和Ta氧化物的膜。 Bi氧化物的前体是包含至少一个羧酸酯基的Bi络合物，并且在低于450℃的温度下分解和沉积。通过低温CVD获得的Bi，Sr和Ta氧化物的膜主要是非 - 铁电体，但可以通过随后的加热工艺转化成铁电体膜。
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