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48 条记录 (耗时 0.042 秒)

    Arcing horn device
    32.
    发明申请
    Arcing horn device 有权
    电弧喇叭装置

    公开(公告)号：US20060213872A1

    公开(公告)日：2006-09-28

    申请号：US10488926

    申请日：2002-09-13

    申请人： Kazuhiko Takasu ,  Takashi Chino ,  Osamu Usuda ,  Toshio Watanabe ,  Tomoyasu Hasegawa ,  Kazuhiko Shimoda ,  Satoru Doi ,  Takehiko Kikuchi ,  Katsuyuki Urasawa ,  Hiroaki Kanatsuji ,  Yoshihiko Ota ,  Hiroki Sakamoto ,  Ryoji Matsushita

    发明人： Kazuhiko Takasu ,  Takashi Chino ,  Osamu Usuda ,  Toshio Watanabe ,  Tomoyasu Hasegawa ,  Kazuhiko Shimoda ,  Satoru Doi ,  Takehiko Kikuchi ,  Katsuyuki Urasawa ,  Hiroaki Kanatsuji ,  Yoshihiko Ota ,  Hiroki Sakamoto ,  Ryoji Matsushita

    IPC分类号： H01H9/44

    CPC分类号： H01B17/46 ,  H01T4/14

    摘要： An object of the present invention is to provide an arcing horn system having a highly efficient dynamic current shutoff property including a dynamic current shutoff capability, for example, enough for the short circuit fault and other object thereof is to provide an arcing horn system capable of repeatedly maintaining the good dynamic current shutoff capability. In an arcing horn system, an insulative tube 21 for surrounding a front end side of an arcing horn 11, 12 is provided and an air vent 21a communicating from a front end portion of the arcing horn 11, 12 to a front end surface of the insulative tube 21 is formed on the insulative tube 21, so that the arc jet is blown off from the air vent 21a upon the flashover in accordance with the thunder stroke. The insulative tube 21 is made of a polyamide resin. A cap 30 for covering the front end side of the insulative tube 21 is disposed so as to prevent the intrusion of the rain water into the air vent 21a.

    摘要翻译： 本发明的一个目的是提供一种具有高动态电流切断特性的电弧喇叭系统，该动态电流切断特性包括动态电流关断能力，例如足够短路故障，其它目的是提供一种能够 反复维持良好的动态电流关断能力。 在电弧喇叭系统中，设置有用于围绕电弧喇叭11,12的前端侧的绝缘管21，并且设置有从电弧喇叭11,12的前端部连通到前端侧的通气孔21a， 绝缘管21形成在绝缘管21上，使得电弧射流根据雷击在闪络时从通风口21a吹出。 绝缘管21由聚酰胺树脂制成。 设置用于覆盖绝缘管21的前端侧的盖30，以防止雨水侵入到排气口21a中。

    Method for manufacturing semiconductor device
    33.
    发明申请
    Method for manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20050202655A1

    公开(公告)日：2005-09-15

    申请号：US11072265

    申请日：2005-03-07

    申请人： Hiroki Sakamoto

    发明人： Hiroki Sakamoto

    IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/36 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

    CPC分类号： H01L21/28052 ,  H01L21/28518 ,  H01L29/665

    摘要： By improving a surface morphology of the polysilicon film and controlling crystallization thereof, an increase in resistance of a silicide film can be prevented and a silicide film having a low resistance and high reliability can be formed. A method for manufacturing a semiconductor device comprises the steps of forming a gate insulation film on a silicon substrate to deposit a polysilicon film on the gate insulation film, and patterning the polysilicon film to form a gate electrode on the gate insulation film, wherein the gate electrode is silicidized to form a silicide, and a resistance of the silicide film is stabilized by reducing a crystal size in the polysilicon film and reducing a degree of variance of the number of the crystals contained in the polysilicon film. Because of this, the surface morphology of the polysilicon film can be improved, thereby making it possible to stabilize the silicide resistance. In addition, by controlling a grain size of the polysilicon, a resistance increase caused by separated portions generated in the silicide film can be prevented.

    摘要翻译： 通过改善多晶硅膜的表面形态并控制其结晶，可以防止硅化物膜的电阻增加，并且可以形成具有低电阻和高可靠性的硅化物膜。 一种制造半导体器件的方法包括以下步骤：在硅衬底上形成栅极绝缘膜以在栅极绝缘膜上沉积多晶硅膜，并且在栅极绝缘膜上构图多晶硅膜以形成栅电极，其中栅极 电极被硅化以形成硅化物，并且通过降低多晶硅膜中的晶体尺寸并降低多晶硅膜中包含的晶体数量的变化程度来稳定硅化物膜的电阻。 因此，能够提高多晶硅膜的表面形态，能够稳定硅化物电阻。 此外，通过控制多晶硅的晶粒尺寸，可以防止由在硅化物膜中产生的分离部分引起的电阻增加。

    Semiconductor device and method for manufacturing the same
    34.
    发明申请
    Semiconductor device and method for manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20050093024A1

    公开(公告)日：2005-05-05

    申请号：US10975919

    申请日：2004-10-26

    申请人： Hiroki Sakamoto ,  Yasuhiro Kawasaki ,  Kenji Yoneda

    发明人： Hiroki Sakamoto ,  Yasuhiro Kawasaki ,  Kenji Yoneda

    IPC分类号： H01L29/423 ,  C23C16/34 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/73 ,  H01L21/8238

    CPC分类号： H01L29/518 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/3185 ,  H01L29/4966

    摘要： A semiconductor device includes a gate insulating film formed on a silicon substrate, a gate electrode formed on the gate insulating film, and an electrical insulating film formed on the gate electrode. The electrical insulating film includes a N—H bond and substantially no Si—H bond. The electrical insulating film is formed by using tetrachlorosilane (SiCl4) that contains no hydrogen (H) as a source gas for a silicon nitride film. Thus, the semiconductor device can suppress residual hydrogen in the gate insulating film and prevent interface defects of the gate insulating film, a shift in the threshold voltage of a transistor, and the degradation of an on-state current. A method for manufacturing the semiconductor device also is provided.

    摘要翻译： 半导体器件包括形成在硅衬底上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和形成在栅电极上的电绝缘膜。 电绝缘膜包括N-H键并且基本上不含Si-H键。 通过使用不含氢（H）的四氯硅烷作为氮化硅膜的源气体来形成电绝缘膜。 因此，半导体器件可以抑制栅极绝缘膜中的残留氢，并防止栅极绝缘膜的界面缺陷，晶体管的阈值电压的偏移和导通状态电流的劣化。 还提供了一种用于制造半导体器件的方法。

    Welding method and welding device
    36.
    发明授权
    Welding method and welding device 失效
    焊接方法和焊接装置

    公开(公告)号：US5446257A

    公开(公告)日：1995-08-29

    申请号：US218630

    申请日：1994-03-28

    申请人： Hiroki Sakamoto ,  Kimihiro Shibata ,  Kiyokazu Mori

    发明人： Hiroki Sakamoto ,  Kimihiro Shibata ,  Kiyokazu Mori

    IPC分类号： B23K26/00 ,  B23K26/04 ,  B23K26/20 ,  G01J1/42 ,  G01N21/84 ,  G01N21/88 ,  B23K26/02

    CPC分类号： B23K26/04

    摘要： During melting and jointing members 2, 3 to weld the members by applying a laser beam 5 to the members while supplying a filler wire 13 to the locally heated portion of the members, welding plasma intensities are measured by sensors 8, 9 from both sides of the locally heated portion with reference to an advancing direction of welding. When the welding plasma intensities measured from both sides of the locally heated portion are largely different from each other, the relative deviation between the laser beam 5 and the filler wire 13 is large, so that a good welding may be difficult to be carried out. Based on this recognitions, the relative position between the laser beam 5 and the filler wire 13 is corrected during welding to prevent occurrence of weld inferiority, so that the occurrence of weld inferiority due to the relative deviation between the the laser beam 5 and the filler wire 13 can be effectively prevented, thereby scrapped inferior members can be decreased providing a reduction of costs of materials and an improvement of weld efficiency.

    摘要翻译： 在熔融和接合构件2,3中，通过在构件的局部加热部分供给填充金属丝13的同时施加激光束5来焊接构件，焊接等离子体强度由传感器8,9从两侧 相对于焊接的前进方向的局部加热部。 当从局部加热部分的两侧测量的焊接等离子体强度大大不同时，激光束5和填充焊丝13之间的相对偏差较大，因此可能难以进行良好的焊接。 基于该识别，在焊接期间校正激光束5和填充焊丝13之间的相对位置，以防止焊接劣化的发生，从而由于激光束5和填充物之间的相对偏离而导致焊接劣化的发生 可以有效地防止钢丝13，从而降低材料成本和提高焊接效率，从而可以减少报废的下部件。

    Laser processing arrangement
    37.
    发明授权
    Laser processing arrangement 失效
    激光加工布置

    公开(公告)号：US5196672A

    公开(公告)日：1993-03-23

    申请号：US840545

    申请日：1992-02-25

    申请人： Hidenobu Matsuyama ,  Kimihiro Shibata ,  Hiroki Sakamoto

    发明人： Hidenobu Matsuyama ,  Kimihiro Shibata ,  Hiroki Sakamoto

    IPC分类号： B23K26/00 ,  B23K26/03 ,  C21D1/09 ,  G01K11/12

    CPC分类号： B23K26/034 ,  B23K26/064

    摘要： A laser processing arrangement includes a laser oscillator which outputs a laser beam. The laser beam path is established such that the beam reflects from a flat surfaced mirror to a concave mirror and then to a second concave mirror before irradiating a work piece under processing. The arrangement further includes a temperature sensor associated with a temperature detecting means. The temperature detecting means is connected to a control unit which controls moving means connected to movable axes of a processing surface in order to move the work piece relative the laser beam. The control unit is further effective to control the laser oscillator according to a desired temperature range for processing. The temperature sensor is preferably positioned within 45.degree. of the laser beam and the angle of incidence of the laser beam is selected so as to be smaller than a brewster angle of the material of the work piece.

    摘要翻译： 激光加工装置包括输出激光束的激光振荡器。 建立激光束路径，使得光束从平坦的表面反射镜反射到凹面镜，然后在照射处理的工件之前到第二凹面镜。 该装置还包括与温度检测装置相关联的温度传感器。 温度检测装置连接到控制单元，该控制单元控制连接到处理表面的可移动轴的移动装置，以便相对于激光束移动工件。 控制单元进一步有效地根据期望的温度范围控制激光振荡器进行处理。 温度传感器优选位于激光束的45°内，并且激光束的入射角被选择为小于工件材料的布鲁斯特角。