公开(公告)号：US07292424B2

公开(公告)日：2007-11-06

申请号：US10488926

申请日：2002-09-13

申请人： Kazuhiko Takasu ,  Takashi Chino ,  Osamu Usuda ,  Toshio Watanabe ,  Tomoyasu Hasegawa ,  Kazuhiko Shimoda ,  Satoru Doi ,  Takehiko Kikuchi ,  Katsuyuki Urasawa ,  Hiroaki Kanatsuji ,  Yoshihiko Ota ,  Hiroki Sakamoto ,  Ryoji Matsushita

发明人： Kazuhiko Takasu ,  Takashi Chino ,  Osamu Usuda ,  Toshio Watanabe ,  Tomoyasu Hasegawa ,  Kazuhiko Shimoda ,  Satoru Doi ,  Takehiko Kikuchi ,  Katsuyuki Urasawa ,  Hiroaki Kanatsuji ,  Yoshihiko Ota ,  Hiroki Sakamoto ,  Ryoji Matsushita

IPC分类号： H02H9/00

CPC分类号： H01B17/46 ,  H01T4/14

摘要： An object of the present invention is to provide an arcing horn system having a highly efficient dynamic current shutoff property including a dynamic current shutoff capability, for example, enough for the short circuit fault and other object thereof is to provide an arcing horn system capable of repeatedly maintaining the good dynamic current shutoff capability.

摘要翻译： 本发明的一个目的是提供一种具有高动态电流切断特性的电弧喇叭系统，该动态电流切断特性包括动态电流关断能力，例如足够短路故障，其它目的是提供一种能够 反复维持良好的动态电流关断能力。

公开(公告)号：US20060213872A1

公开(公告)日：2006-09-28

申请号：US10488926

申请日：2002-09-13

申请人： Kazuhiko Takasu ,  Takashi Chino ,  Osamu Usuda ,  Toshio Watanabe ,  Tomoyasu Hasegawa ,  Kazuhiko Shimoda ,  Satoru Doi ,  Takehiko Kikuchi ,  Katsuyuki Urasawa ,  Hiroaki Kanatsuji ,  Yoshihiko Ota ,  Hiroki Sakamoto ,  Ryoji Matsushita

发明人： Kazuhiko Takasu ,  Takashi Chino ,  Osamu Usuda ,  Toshio Watanabe ,  Tomoyasu Hasegawa ,  Kazuhiko Shimoda ,  Satoru Doi ,  Takehiko Kikuchi ,  Katsuyuki Urasawa ,  Hiroaki Kanatsuji ,  Yoshihiko Ota ,  Hiroki Sakamoto ,  Ryoji Matsushita

IPC分类号： H01H9/44

CPC分类号： H01B17/46 ,  H01T4/14

摘要： An object of the present invention is to provide an arcing horn system having a highly efficient dynamic current shutoff property including a dynamic current shutoff capability, for example, enough for the short circuit fault and other object thereof is to provide an arcing horn system capable of repeatedly maintaining the good dynamic current shutoff capability. In an arcing horn system, an insulative tube 21 for surrounding a front end side of an arcing horn 11, 12 is provided and an air vent 21a communicating from a front end portion of the arcing horn 11, 12 to a front end surface of the insulative tube 21 is formed on the insulative tube 21, so that the arc jet is blown off from the air vent 21a upon the flashover in accordance with the thunder stroke. The insulative tube 21 is made of a polyamide resin. A cap 30 for covering the front end side of the insulative tube 21 is disposed so as to prevent the intrusion of the rain water into the air vent 21a.

摘要翻译： 本发明的一个目的是提供一种具有高动态电流切断特性的电弧喇叭系统，该动态电流切断特性包括动态电流关断能力，例如足够短路故障，其它目的是提供一种能够 反复维持良好的动态电流关断能力。 在电弧喇叭系统中，设置有用于围绕电弧喇叭11,12的前端侧的绝缘管21，并且设置有从电弧喇叭11,12的前端部连通到前端侧的通气孔21a， 绝缘管21形成在绝缘管21上，使得电弧射流根据雷击在闪络时从通风口21a吹出。 绝缘管21由聚酰胺树脂制成。 设置用于覆盖绝缘管21的前端侧的盖30，以防止雨水侵入到排气口21a中。

公开(公告)号：US20050285240A1

公开(公告)日：2005-12-29

申请号：US11167169

申请日：2005-06-28

申请人： Eitaro Miyake ,  Yoshihiko Tojo ,  Osamu Usuda

发明人： Eitaro Miyake ,  Yoshihiko Tojo ,  Osamu Usuda

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L21/4842 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49537 ,  H01L23/49541 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device and manufacturing the semiconductor device are described. There is provided a method of manufacturing a semiconductor device including, disposing a lead frame inside an outer lead so as to couple between a coupling portion and a coupling acceptance portion, the lead frame including a chip mounting portion and the coupling acceptance portion, the outer lead including a frame portion with outer terminal portions and the coupling portion, disposing a semiconductor chip on the chip mounting portion, connecting between the outer terminal portions and the semiconductor chip with a plurality of wires or leads, sealing the outer terminal portion, the lead frame disposed the semiconductor chip on and the wires or the leads by a mold resin, cutting off the outer terminal portions from the outer lead, and uncoupling the coupling portion from the coupling acceptance portion.

摘要翻译： 描述半导体器件并制造半导体器件。 提供了一种制造半导体器件的方法，包括：将引线框架设置在外部引线内部以便耦合在耦合部分和耦合接受部分之间，引线框架包括芯片安装部分和耦合接合部分，外部 引线，其包括具有外部端子部分的框架部分和耦合部分，在芯片安装部分上设置半导体芯片，用多个导线或引线连接外部端子部分和半导体芯片之间，密封外部端子部分，引线 框架通过模制树脂将半导体芯片放置在导线或引线上，从外部引线切断外部端子部分，以及将耦合部分与联接接合部分分离。

公开(公告)号：US20060055432A1

公开(公告)日：2006-03-16

申请号：US11214730

申请日：2005-08-31

申请人： Kazuo Shimokawa ,  Takashi Koyanagawa ,  Masako Ooishi ,  Tatsuya Yamada ,  Osamu Usuda ,  Yoshiki Endo ,  Taiki Miura ,  Masaki Toyoshima ,  Ichiro Omura ,  Akio Nakagawa ,  Kenichi Matsushita ,  Yusuke Kawaguchi ,  Haruki Arai ,  Hiroshi Takei ,  Tomohiro Kawano ,  Noriaki Yoshikawa ,  Morio Takahashi ,  Yasuhito Saito ,  Masahiro Urase

发明人： Kazuo Shimokawa ,  Takashi Koyanagawa ,  Masako Ooishi ,  Tatsuya Yamada ,  Osamu Usuda ,  Yoshiki Endo ,  Taiki Miura ,  Masaki Toyoshima ,  Ichiro Omura ,  Akio Nakagawa ,  Kenichi Matsushita ,  Yusuke Kawaguchi ,  Haruki Arai ,  Hiroshi Takei ,  Tomohiro Kawano ,  Noriaki Yoshikawa ,  Morio Takahashi ,  Yasuhito Saito ,  Masahiro Urase

IPC分类号： H03D13/00

CPC分类号： H01L23/3121 ,  H01L21/565 ,  H01L23/36 ,  H01L23/367 ,  H01L23/4822 ,  H01L23/49805 ,  H01L23/49844 ,  H01L24/16 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/84 ,  H01L25/0655 ,  H01L25/165 ,  H01L29/4175 ,  H01L29/7802 ,  H01L29/7806 ,  H01L29/7809 ,  H01L29/7813 ,  H01L29/7835 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40225 ,  H01L2224/73153 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor module comprises a mounting board. A plurality of power switching device chips are mounted on the mounting board by flip-chip bonding. The chip has an upper surface and a lower surface and is configured to face the upper surface toward the mounting board. A drive IC chip is mounted on the mounting board by flip-chip bonding. The drive IC chip is operative to drive gates of transistors formed in the plurality of power switching device chips. A plurality of heat sink members are located on the lower surfaces of the plurality of power switching device chips, respectively. A resinous member is provided to seal the plurality of power switching device chips and the drive IC chip in a single package.

公开(公告)号：USD508682S1

公开(公告)日：2005-08-23

申请号：US29206162

申请日：2004-05-27

申请人： Tatsuya Yamada ,  Kazuhiko Kurahashi ,  Toshihisa Inoue ,  Taizo Tomioka ,  Kazuo Shimokawa ,  Yoshiki Endo ,  Masahiro Urase ,  Osamu Usuda

设计人： Tatsuya Yamada ,  Kazuhiko Kurahashi ,  Toshihisa Inoue ,  Taizo Tomioka ,  Kazuo Shimokawa ,  Yoshiki Endo ,  Masahiro Urase ,  Osamu Usuda

公开(公告)号：US4732313A

公开(公告)日：1988-03-22

申请号：US759273

申请日：1985-07-26

申请人： Mituo Kobayashi ,  Osamu Usuda ,  Yoshihiko Sano ,  Koichiro Atsumi

发明人： Mituo Kobayashi ,  Osamu Usuda ,  Yoshihiko Sano ,  Koichiro Atsumi

IPC分类号： B23K20/00 ,  H01L21/48 ,  H01L21/603 ,  H05K13/06 ,  H01L21/60

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L21/4825 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/97 ,  H05K13/06 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48824 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/7865 ,  H01L2224/85043 ,  H01L2224/85055 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/20752

摘要： A lead frame is conveyed along a convey direction in a convey path filled with a reducing gas. A semiconductor pellet is placed on the lead frame at a die bonding portion. A bonding wire made of copper or a copper alloy is supplied to the next wire bonding portion. The lower end of the bonding wire is melted with an oxyhydrogen torch surrounded by an air curtain, thereby forming a ball. The bonding wire is guided into the convey path by a capillary. The ball is thermocompressed to an electrode pad of the semiconductor pellet. The other end of the bonding wire is fused and thermocompressed against the outer lead of the lead frame at a postbonding portion. The bonding wire is thus looped between the semiconductor pellet and the outer lead.

摘要翻译： 在填充有还原气体的输送路径中，沿输送方向输送引线框架。 半导体芯片在芯片接合部分放置在引线框架上。 由铜或铜合金制成的接合线供给下一个引线接合部。 接合线的下端由气帘包围的氢氧炬熔化，从而形成球。 接合线通过毛细管被引导到输送路径中。 将球热压到半导体芯片的电极焊盘。 接合线的另一端在后接合部分处熔合并热压在引线框架的外引线上。 因此，接合线环绕在半导体芯片和外部引线之间。

公开(公告)号：US20090001135A1

公开(公告)日：2009-01-01

申请号：US12163158

申请日：2008-06-27

申请人： Makoto Kishimoto ,  Osamu Usuda

发明人： Makoto Kishimoto ,  Osamu Usuda

IPC分类号： B23K20/10

CPC分类号： B23K20/10 ,  B23K2101/40 ,  H01L24/37 ,  H01L24/40 ,  H01L24/77 ,  H01L24/84 ,  H01L2224/37147 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor manufacturing apparatus operable to simultaneously apply supersonic vibration to two bonding sites located at different heights to simultaneously perform bonding of the two bonding sites, the apparatus includes: a cylindrical body; a first protrusion provided on an outer peripheral surface of the cylindrical body and receiving supersonic vibration propagated through the cylindrical body; and a second protrusion provided on the outer peripheral surface of the cylindrical body and receiving supersonic vibration propagated through the cylindrical body. A distance between an axial center of the cylindrical body and the tip of the first protrusion is generally equal to the distance between the axial center of the cylindrical body and the tip of the second protrusion. A tip surface of the first protrusion and a tip surface of the second protrusion are on different planes, respectively.

摘要翻译： 一种半导体制造装置，其可操作以对位于不同高度的两个结合位置同时施加超音速振动，以同时进行所述两个结合位置的结合，所述装置包括：圆柱体; 设置在所述圆筒体的外周面上并且接收通过所述圆筒体传播的超音速振动的第一突起; 以及设置在所述圆筒体的外周面上并且接收通过所述圆筒体传播的超音速振动的第二突起。 圆柱体的轴心与第一突起的前端之间的距离通常等于圆柱体的轴心与第二突起的尖端之间的距离。 第一突起的尖端表面和第二突起的尖端表面分别在不同的平面上。

公开(公告)号：US07332804B2

公开(公告)日：2008-02-19

申请号：US11167169

申请日：2005-06-28

申请人： Eitaro Miyake ,  Yoshihiko Tojo ,  Osamu Usuda

发明人： Eitaro Miyake ,  Yoshihiko Tojo ,  Osamu Usuda

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/4842 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49537 ,  H01L23/49541 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device and manufacturing the semiconductor device are described. There is provided a method of manufacturing a semiconductor device including, disposing a lead frame inside an outer lead so as to couple between a coupling portion and a coupling acceptance portion, the lead frame including a chip mounting portion and the coupling acceptance portion, the outer lead including a frame portion with outer terminal portions and the coupling portion, disposing a semiconductor chip on the chip mounting portion, connecting between the outer terminal portions and the semiconductor chip with a plurality of wires or leads, sealing the outer terminal portion, the lead frame disposed the semiconductor chip on and the wires or the leads by a mold resin, cutting off the outer terminal portions from the outer lead, and uncoupling the coupling portion from the coupling acceptance portion.

摘要翻译： 描述半导体器件并制造半导体器件。 提供了一种制造半导体器件的方法，包括：将引线框架设置在外部引线内部以便耦合在耦合部分和耦合接受部分之间，引线框架包括芯片安装部分和耦合接合部分，外部 引线，其包括具有外部端子部分的框架部分和耦合部分，在芯片安装部分上设置半导体芯片，用多个导线或引线连接外部端子部分和半导体芯片之间，密封外部端子部分，引线 框架通过模制树脂将半导体芯片放置在导线或引线上，从外部引线切断外部端子部分，以及将耦合部分与联接接合部分分离。

公开(公告)号：USD521952S1

公开(公告)日：2006-05-30

申请号：US29206163

申请日：2004-05-27

申请人： Tatsuya Yamada ,  Kazuhiko Kurahashi ,  Toshihisa Inoue ,  Taizo Tomioka ,  Kazuo Shimokawa ,  Yoshiki Endo ,  Masahiro Urase ,  Osamu Usuda

设计人： Tatsuya Yamada ,  Kazuhiko Kurahashi ,  Toshihisa Inoue ,  Taizo Tomioka ,  Kazuo Shimokawa ,  Yoshiki Endo ,  Masahiro Urase ,  Osamu Usuda

公开(公告)号：US07514783B2

公开(公告)日：2009-04-07

申请号：US11214730

申请日：2005-08-31

申请人： Kazuo Shimokawa ,  Takashi Koyanagawa ,  Masako Ooishi ,  Tatsuya Yamada ,  Osamu Usuda ,  Yoshiki Endo ,  Taiki Miura ,  Masaki Toyoshima ,  Ichiro Omura ,  Akio Nakagawa ,  Kenichi Matsushita ,  Yusuke Kawaguchi ,  Haruki Arai ,  Hiroshi Takei ,  Tomohiro Kawano ,  Noriaki Yoshikawa ,  Morio Takahashi ,  Yasuhito Saito ,  Masahiro Urase

发明人： Kazuo Shimokawa ,  Takashi Koyanagawa ,  Masako Ooishi ,  Tatsuya Yamada ,  Osamu Usuda ,  Yoshiki Endo ,  Taiki Miura ,  Masaki Toyoshima ,  Ichiro Omura ,  Akio Nakagawa ,  Kenichi Matsushita ,  Yusuke Kawaguchi ,  Haruki Arai ,  Hiroshi Takei ,  Tomohiro Kawano ,  Noriaki Yoshikawa ,  Morio Takahashi ,  Yasuhito Saito ,  Masahiro Urase

IPC分类号： H01L23/34

CPC分类号： H01L23/3121 ,  H01L21/565 ,  H01L23/36 ,  H01L23/367 ,  H01L23/4822 ,  H01L23/49805 ,  H01L23/49844 ,  H01L24/16 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/84 ,  H01L25/0655 ,  H01L25/165 ,  H01L29/4175 ,  H01L29/7802 ,  H01L29/7806 ,  H01L29/7809 ,  H01L29/7813 ,  H01L29/7835 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40225 ,  H01L2224/73153 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor module comprises a mounting board. A plurality of power switching device chips are mounted on the mounting board by flip-chip bonding. The chip has an upper surface and a lower surface and is configured to face the upper surface toward the mounting board. A drive IC chip is mounted on the mounting board by flip-chip bonding. The drive IC chip is operative to drive gates of transistors formed in the plurality of power switching device chips. A plurality of heat sink members are located on the lower surfaces of the plurality of power switching device chips, respectively. A resinous member is provided to seal the plurality of power switching device chips and the drive IC chip in a single package.