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    FLUID ANALYZER AND METHOD OF MANUFACTURING FLUID ANALYZER
    34.
    发明申请
    FLUID ANALYZER AND METHOD OF MANUFACTURING FLUID ANALYZER 有权

    公开(公告)号：US20170115213A1

    公开(公告)日：2017-04-27

    申请号：US15294882

    申请日：2016-10-17

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Akio ITO ,  Tatsuo DOUGAKIUCHI ,  Tadataka EDAMURA

    IPC: G01N21/39 ,  H01S5/022 ,  H01S5/12 ,  H01S5/34

    CPC classification number: G01N21/39 ,  G01N2021/399 ,  H01S5/0264 ,  H01S5/22 ,  H01S5/3401 ,  H01S2301/176

    Abstract: A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other, a first quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a first light incident surface facing the first light-emitting surface, a second quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a second light incident surface facing the second light-emitting surface, and a resin member covering at least the second light-emitting surface and the second light incident surface and having optical transparency and an electrical insulation property. A first space in which a fluid to be analyzed is disposed is provided in a first area between the first light-emitting surface and the first light incident surface.

    QUANTUM CASCADE LASER
    35.
    发明申请
    QUANTUM CASCADE LASER 有权
    量子CASCADE激光

    公开(公告)号：US20170063038A1

    公开(公告)日：2017-03-02

    申请号：US15253382

    申请日：2016-08-31

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Akio ITO ,  Tatsuo DOUGAKIUCHI ,  Kazuue FUJITA ,  Tadataka EDAMURA

    IPC: H01S5/10 ,  H01S5/24 ,  H01S3/08 ,  H01S5/12 ,  H01S5/34 ,  H01S5/14

    CPC classification number: H01S5/142 ,  H01S5/0207 ,  H01S5/0604 ,  H01S5/1092 ,  H01S5/12 ,  H01S5/24 ,  H01S5/3402 ,  H01S2302/02

    Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer having a multistage lamination of emission layers and injection layers. The active layer is configured to be capable of generating first pump light of a frequency ω1 and second pump light of a frequency ω2, and to generate output light of a difference frequency ω by difference frequency generation. An external diffraction grating is provided for generating the first pump light, outside an element structure portion including the active layer, and an internal diffraction grating is provided for generating the second pump light, inside the element structure portion. The frequency ω2 is set to be fixed to a frequency not coincident with a gain peak, and the frequency ω1 is set to be variable to a frequency different from the frequency ω2.

    Abstract translation: 量子级联激光器配置有半导体衬底，以及具有发射层和注入层的多级叠层的有源层。 有源层被配置为能够产生频率ω1的第一泵浦光和频率ω2的第二泵浦光，并且通过差频产生产生差频ω的输出光。 提供外部衍射光栅，用于在包括有源层的元件结构部分外部产生第一泵浦光，并且在元件结构部分内部设置内部衍射光栅以产生第二泵浦光。 频率ω2被设定为固定为与增益峰值不一致的频率，频率ω1被设定为可变至不同于频率ω2的频率。

    QUANTUM CASCADE LASER
    36.
    发明申请
    QUANTUM CASCADE LASER 有权
    量子CASCADE激光

    公开(公告)号：US20170033536A1

    公开(公告)日：2017-02-02

    申请号：US15193249

    申请日：2016-06-27

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Kazuue FUJITA ,  Akio ITO ,  Tadataka EDAMURA ,  Tatsuo DOUGAKIUCHI

    IPC: H01S5/20 ,  H01S5/24 ,  H01S5/343 ,  H01S5/34

    CPC classification number: H01S5/2018 ,  H01S5/0604 ,  H01S5/1096 ,  H01S5/18 ,  H01S5/24 ,  H01S5/3402 ,  H01S5/34306 ,  H01S2302/02

    Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a cascade structure in the form of a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ω1 and second pump light of a frequency ω2 by intersubband emission transitions of electrons, and to generate output light of a difference frequency ω by difference frequency generation from the first pump light and the second pump light. Grooves respectively formed in a direction intersecting with a resonating direction in a laser cavity structure are provided on a second surface opposite to the first surface of the substrate.

    Abstract translation: 量子级联激光器被配置为具有半导体衬底和设置在衬底的第一表面上的有源层，并且具有层叠结构的级联结构，该级联结构是单位层叠结构的多级叠层形式，每层包括发射层和注入层 。 有源层被配置为能够通过电子的子带间发射跃迁来产生频率ω1的第一泵浦光和频率ω2的第二泵浦光，并且通过来自第一泵的差频产生产生差频ω的输出光 光和第二个泵灯。 在与基板的第一表面相对的第二表面上设置分别在与激光腔结构中的谐振方向相交的方向上形成的槽。

    QUANTUM-CASCADE LASER
    37.
    发明申请
    QUANTUM-CASCADE LASER 有权
    QUANTUM-CASCADE激光

    公开(公告)号：US20160087408A1

    公开(公告)日：2016-03-24

    申请号：US14888999

    申请日：2014-05-19

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Kazuue FUJITA ,  Tadataka EDAMURA ,  Naota AKIKUSA

    IPC: H01S5/34 ,  H01S5/06 ,  H01S5/12

    CPC classification number: H01S5/3402 ,  H01S5/0208 ,  H01S5/0604 ,  H01S5/1096 ,  H01S5/12 ,  H01S5/309 ,  H01S2302/02

    Abstract: A quantum cascade laser is configured with a semiconductor substrate and first and second active layers provided in series on the substrate. A unit laminate structure of the first active layer has a subband level structure having an emission upper level and an emission lower level, and is configured so as to be able to generate light of a first frequency ω1, a unit laminate structure of the second active layer has a subband level structure having a first emission upper level, a second emission upper level, and a plurality of emission lower levels, and is configured so as to be able to generate light of a second frequency ω2, and light of a difference frequency ω is generated by difference frequency generation from the light of the first frequency ω1 and the light of the second frequency ω2.

    Abstract translation: 量子级联激光器被配置为具有半导体衬底和在衬底上串联设置的第一和第二有源层。 第一有源层的单元层叠结构具有发射上限和发射较低电平的子带电平结构，并且被配置为能够产生第一频率ω1的光，第二有源层的单位层叠结构 层具有具有第一发射上限电平，第二发射上电平和多个发射较低电平的子带电平结构，并且被配置为能够产生第二频率ω2的光，以及差频率 ω由第一频率ω1的光和第二频率ω2的光的差频产生产生。

    QUANTUM CASCADE LASER
    38.
    发明申请
    QUANTUM CASCADE LASER 有权
    量子CASCADE激光

    公开(公告)号：US20130322479A1

    公开(公告)日：2013-12-05

    申请号：US13909611

    申请日：2013-06-04

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Atsushi SUGIYAMA ,  Naota AKIKUSA ,  Tadataka EDAMURA

    IPC: H01S5/34

    CPC classification number: H01S5/3401 ,  B82Y20/00 ,  H01S5/0071 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/12 ,  H01S5/141 ,  H01S5/3402

    Abstract: A quantum cascade laser includes a semiconductor substrate, and an active layer that is provided on the substrate, and has a cascade structure in which emission layers and injection layers are alternately laminated by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, the active layer generates light by intersubband transition in a quantum well structure. Further, in a laser cavity structure for light with a predetermined wavelength to be generated in the active layer, reflection control films including at least one layer of CeO2 film are formed on a first end face and a second end face facing each other. Thereby, it is possible to realize a quantum cascade laser capable of preferably realizing reflectance control for light within a mid-infrared wavelength region on the laser device end face.

    Abstract translation: 量子级联激光器包括半导体衬底和设置在衬底上的有源层，并且具有级联结构，其中发射层和注入层通过多级层压单元层叠结构交替层叠，每个层叠结构由量子阱发射层 和注入层，有源层通过量子阱结构中的子带间跃迁产生光。 此外，在有源层中产生具有预定波长的光的激光腔结构中，在彼此相对的第一端面和第二端面上形成包括至少一层CeO 2膜的反射控制膜。 由此，能够实现能够优选实现激光装置端面的中红外波长区域内的光的反射率控制的量子级联激光器。

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