公开(公告)号：US10078233B2

公开(公告)日：2018-09-18

申请号：US15328903

申请日：2014-07-30

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di Liang ,  Geza Kurczveil ,  Marco Fiorentino ,  Raymond G. Beausoleil

IPC: G02F1/035 ,  G02F1/025 ,  G02B6/293 ,  G02F1/015

CPC classification number: G02F1/025 ,  G02B6/29338 ,  G02B2006/12085 ,  G02B2006/12142 ,  G02F1/3133 ,  G02F2001/0152 ,  G02F2203/15

Abstract: An example device in accordance with an aspect of the present disclosure includes a first semiconductor layer disposed on a substrate, a dielectric layer disposed between the first semiconductor layer and a second semiconductor layer dissimilar from the first semiconductor layer. A capacitor is formed of at least a portion of the first semiconductor layer, the dielectric layer, and the second semiconductor layer, and is to be included in an optical waveguide resonator.

公开(公告)号：US20180083711A1

公开(公告)日：2018-03-22

申请号：US15269542

申请日：2016-09-19

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Cheng Li ,  Di Liang ,  Kehan Zhu

IPC: H04B10/564 ,  H04L27/01 ,  H04B10/54

CPC classification number: H04B10/564 ,  H04B10/504 ,  H04B10/541 ,  H04B10/58 ,  H04B10/801 ,  H04L25/028 ,  H04L25/03885 ,  H04L27/01

Abstract: Examples disclosed herein relate to optical driver circuits. In some of the disclosed examples, an optical driver circuit includes a pre-driver circuit and a main driver circuit. The pre-driver circuit may include a pattern generator and at least one serializer to generate a main modulation signal and an inverted delayed modulation signal. The main driver circuit may include a level controller to control amplitudes of pre-emphasis on rising and falling edges of a modulation signal output and an equalization controller to transition the modulation signal output from the pre-emphasis amplitudes to main modulation amplitudes using the inverted delayed modulation signal.

公开(公告)号：US20170317473A1

公开(公告)日：2017-11-02

申请号：US15140588

申请日：2016-04-28

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di Liang ,  Geza Kurczveil ,  Raymond G. Beausoleil ,  Marco Fiorentino

IPC: H01S5/343 ,  H01S5/32 ,  H01S3/23 ,  H01S5/347 ,  H01S3/063

CPC classification number: H01S5/343 ,  H01S3/0637 ,  H01S3/2375 ,  H01S5/021 ,  H01S5/0216 ,  H01S5/0261 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/3211 ,  H01S5/3412 ,  H01S5/347

Abstract: An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

公开(公告)号：US20170045762A1

公开(公告)日：2017-02-16

申请号：US15305930

申请日：2014-05-07

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Zhihong Huang ,  Di Liang ,  Zhen Peng ,  Raymond G Beausoleil

IPC: G02F1/065 ,  G02F1/025 ,  G02F1/00

CPC classification number: G02F1/065 ,  G02B6/122 ,  G02B6/29341 ,  G02B2006/12061 ,  G02B2006/12085 ,  G02B2006/12142 ,  G02F1/0018 ,  G02F1/025 ,  G02F2201/12 ,  G02F2202/022 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2203/055 ,  G02F2203/15

Abstract: A polymer-clad optical modulator includes a substrate comprising an insulating material; a silicon microring on the substrate; silicon waveguides on the substrate adjacent the silicon microring; an electro-optic polymer covering the silicon microring and the silicon waveguide; and an electrical contact on top of the electro-optic polymer. The silicon microring or a portion of an adjacent silicon layer is lightly doped. A polymer-clad depletion type optical modulator and a polymer-clad carrier injection type optical modulator, each employing the lightly doped silicon microring or an adjacent lightly doped silicon layer, are also described.

Abstract translation: 包含聚合物的光调制器包括：包含绝缘材料的基片; 衬底上的硅微环; 衬底上的硅波导与硅微环相邻; 覆盖硅微环和硅波导的电光聚合物; 以及在电光聚合物的顶部上的电接触。 硅微环或相邻硅层的一部分被轻掺杂。 还描述了使用轻掺杂硅微环或相邻的轻掺杂硅层的聚合物包层耗尽型光调制器和聚合物包层载流子注入型光调制器。

公开(公告)号：US12094987B2

公开(公告)日：2024-09-17

申请号：US17073152

申请日：2020-10-16

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Zhihong Huang ,  Di Liang ,  Xiaoge Zeng

IPC: H01L31/0232 ,  G02B6/293 ,  G02B6/42 ,  H01L27/144 ,  H01L31/108 ,  H01L31/18 ,  H04B10/25 ,  H04B10/50 ,  H04B10/516 ,  H04B10/67

CPC classification number: H01L31/02327 ,  G02B6/29338 ,  G02B6/4215 ,  H01L27/1446 ,  H01L31/1085 ,  H01L31/1804 ,  H04B10/25 ,  H04B10/516 ,  H04B10/5051 ,  H04B10/506 ,  H04B10/67

Abstract: Integrated optical filter and photodetectors and methods of fabrication thereof are described herein according to the present disclosure. An example of an integrated optical filter and photodetector described herein includes a substrate, an insulator layer on the substrate, and a semiconductor layer on the insulator layer. An optical filter having a resonant cavity is formed in or on the semiconductor layer. The integrated optical filter and photodetector further includes two first metal fingers and a second metal finger interdigitated between the two first metal fingers on the semiconductor layer forming Schottky barriers. The first metal fingers are constructed from a different metal relative to the second metal finger.

公开(公告)号：US20240113490A1

公开(公告)日：2024-04-04

申请号：US17937071

申请日：2022-09-30

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Stanley Cheung ,  Wayne Victor Sorin ,  Yuan Yuan ,  Raymond G. Beausoleil ,  Di Liang

IPC: H01S3/083 ,  H01S3/08 ,  H01S3/10 ,  H01S3/106 ,  H01S3/107

CPC classification number: H01S3/083 ,  H01S3/08027 ,  H01S3/08031 ,  H01S3/10053 ,  H01S3/1062 ,  H01S3/107

Abstract: Examples described herein relate to an optical device. The optical device includes a first microring resonator (MRR) laser having a first resonant frequency and a first free spectral range (FSR). The first FSR is greater than a channel spacing of the optical device. Further, the optical device includes a first frequency-dependent filter formed along a portion of the first MRR laser via a common bus waveguide to attenuate one or more frequencies different from the first resonant frequency. A length of the common bus waveguide is chosen to achieve a second FSR of the common bus waveguide to be substantially equal to the channel spacing to enable a single-mode operation for the optical device. Moreover, the optical device includes a first reflector formed at a first end of the common bus waveguide to enhance a unidirectionality of optical signal within the first MRR laser.

公开(公告)号：US11646802B2

公开(公告)日：2023-05-09

申请号：US16891008

申请日：2020-06-02

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di Liang ,  Zhihong Huang

IPC: H04B10/2507 ,  H04B10/61

CPC classification number: H04B10/6151 ,  H04B10/2572

Abstract: Systems and methods are provided for receiving an optical signal from an optical fiber, including: coupling via an optical coupler the optical signal from an optical fiber into first and second waveguides, wherein the optical signal comprises TE and TM polarized optical signals and the optical coupler couples the TE polarized optical signal into the first waveguide and the TM polarized optical signal into the second waveguide; equalizing the TE and TM polarized optical signals from the coupler to equalize optical power levels of the TE and TM polarized optical signals; optically combining the equalized TE and TM polarized optical signals; and transmitting the combined optical signal to a photodetector.

公开(公告)号：US11539440B2

公开(公告)日：2022-12-27

申请号：US16947056

申请日：2020-07-16

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Geza Kurczveil ,  Di Liang ,  Sudharsanan Srinivasan ,  Raymond G. Beausoleil

IPC: H04B10/00 ,  H04B10/50 ,  H04J14/00

Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source and a second optical source coupled to the first optical source and injection seeded by the first optical source. The optical transmitter further includes an output coupler, the second optical source coupled to the optical coupler via an output waveguide and configured to emit light having multiple different wavelengths through the output waveguide. In some implementations, the second optical source is self-injection seeded.

公开(公告)号：US11502215B2

公开(公告)日：2022-11-15

申请号：US17249192

申请日：2021-02-23

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Di Liang ,  Xiaoge Zeng ,  Zhihong Huang

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0336

Abstract: Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.

公开(公告)号：US11105988B2

公开(公告)日：2021-08-31

申请号：US16457776

申请日：2019-06-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang ,  Zhihong Huang ,  Geza Kurczveil ,  Raymond G. Beausoleil

IPC: G02B6/42 ,  H04J14/02 ,  H01S5/343 ,  H01S5/34 ,  G02B6/293 ,  H01L31/18 ,  H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01S5/02 ,  H01S5/22 ,  H01L31/0203 ,  H01L31/113 ,  H01L31/0232 ,  H01S5/30 ,  H01S5/026 ,  H04B10/80 ,  H04B10/40 ,  H01S5/065 ,  H01S5/02234

Abstract: A Dense Wavelength Division Multiplexing (DWDM) photonic integration circuit (PIC) that implements a DWDM system, such as a transceiver, is described. The DWDM PIC architecture includes photonic devices fully integrating on a single manufacturing platform. The DWDM PIC has a multi-wavelength optical laser, a quantum dot (QD) laser with integrated heterogeneous metal oxide semiconductor (H-MOS) capacitor, integrated on-chip. The multi-wavelength optical laser can be a symmetric comb laser that generates two equal outputs of multi-wavelength light. Alternatively, the DWDM PIC can be designed to interface with a stand-alone multi-wavelength optical laser that is off-chip. In some implementations, the DWDM PIC integrates multiple optimally designed photonic devices, such as a silicon geranium (SiGe) avalanche photodetector (APD), an athermal H-MOS wavelength splitter, a QD photodetector, and a heterogenous grating coupler. Accordingly, fabricating the DWDM PIC includes a unique III-V to silicon bonding process, which is adapted for its use of SiGe APDs.