公开(公告)号：US20090000551A1

公开(公告)日：2009-01-01

申请号：US12204717

申请日：2008-09-04

申请人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： C23C16/54

CPC分类号： C23C16/24 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32449

摘要： Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.

摘要翻译： 提供了具有由气体分配板产生的流动梯度的方法和装置。 在一个实施例中，该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。 用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板，并且具有由四个侧面分开的至少四个角。 气体分配板还包括通过气体分配板形成的第一多个扼流圈，位于角部的第一多个扼流圈，以及通过气体分配板形成的第二多个扼流圈，沿着侧面设置的第二多个扼流圈 在所述角区域之间的所述气体分配板中，所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。

公开(公告)号：US20110041873A1

公开(公告)日：2011-02-24

申请号：US12925767

申请日：2010-10-28

申请人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

发明人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

IPC分类号： B08B7/00

CPC分类号： C23C16/0209 ,  C23C16/5096

摘要： We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate.

摘要翻译： 当在沉积室中顺序地处理多个基板时，我们具有提高膜的化学气相沉积（CVD）的沉积速率均匀性的方法。 该方法包括当衬底存在于沉积室中时，围绕衬底的处理体积内的至少一个处理体积结构的等离子体预热。 我们还有一种装置控制的方法，其可以在沉积室中顺次地串联处理多个基板的开始时调整几个基板的沉积时间，使得沉积膜厚度在处理期间保持基本恒定 系列底物。 将这些方法组合成单一方法提供了从基材到底物控制平均膜厚度方面的最佳总体结果。

公开(公告)号：US07183197B2

公开(公告)日：2007-02-27

申请号：US11133130

申请日：2005-05-18

申请人： Tae Kyung Won ,  Sanjay Yadav

发明人： Tae Kyung Won ,  Sanjay Yadav

IPC分类号： H01L21/4763

CPC分类号： C23C16/345 ,  C23C8/36

摘要： A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and depositing the material layer on the substrate at low temperature. The material layer can be used as an encapsulating layer for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. In one aspect, the encapsulating layer includes one or more material layers (multilayer) having one or more barrier layer materials and one or more low-dielectric constant materials. The encapsulating layer thus deposited provides reduced surface roughness, improved water-barrier performance, reduce thermal stress, good step coverage, and can be applied to many substrate types and many substrate sizes. Accordingly, the encapsulating layer thus deposited provides good device lifetime for various display devices, such as OLED devices. In another aspect, a method of depositing an amorphous carbon material on a substrate at low temperature is provided. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.

摘要翻译： 描述了将材料层沉积到基底上的方法和装置。 该方法包括将用于材料层的前体的混合物输送到处理室中，并在低温下将材料层沉积在基底上。 材料层可以用作需要低温沉积工艺的各种显示应用的封装层，这是由于使用的下层材料的热不稳定性。 在一个方面，封装层包括具有一个或多个势垒层材料和一种或多种低介电常数材料的一种或多种材料层（多层）。 由此沉积的封装层提供降低的表面粗糙度，改善的防水性能，降低热应力，良好的阶梯覆盖，并且可以应用于许多基板类型和许多基板尺寸。 因此，如此沉积的封装层为诸如OLED器件的各种显示器件提供了良好的器件寿命。 另一方面，提供了一种在低温下在基板上沉积无定形碳材料的方法。 无定形碳材料可用于降低热应力并防止沉积的薄膜从基底上剥离。

公开(公告)号：US07504332B2

公开(公告)日：2009-03-17

申请号：US11621044

申请日：2007-01-08

申请人： Tae Kyung Won ,  Sanjay Yadav

发明人： Tae Kyung Won ,  Sanjay Yadav

IPC分类号： H01L21/4763

CPC分类号： C23C16/345 ,  C23C8/36 ,  C23C28/00 ,  C23C28/04 ,  C23C28/42 ,  H01L51/5256

摘要： A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and depositing the material layer on the substrate at low temperature. The material layer can be used as an encapsulating layer for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. In one aspect, the encapsulating layer includes one or more material layers (multilayer) having one or more barrier layer materials and one or more low-dielectric constant materials. The encapsulating layer thus deposited provides reduced surface roughness, improved water-barrier performance, reduce thermal stress, good step coverage, and can be applied to many substrate types and many substrate sizes. Accordingly, the encapsulating layer thus deposited provides good device lifetime for various display devices, such as OLED devices. In another aspect, a method of depositing an amorphous carbon material on a substrate at low temperature is provided. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.

摘要翻译： 描述了将材料层沉积到基底上的方法和装置。 该方法包括将用于材料层的前体的混合物输送到处理室中，并在低温下将材料层沉积在基底上。 材料层可以用作需要低温沉积工艺的各种显示应用的封装层，这是由于使用的下层材料的热不稳定性。 在一个方面，封装层包括具有一个或多个势垒层材料和一种或多种低介电常数材料的一种或多种材料层（多层）。 由此沉积的封装层提供降低的表面粗糙度，改善的防水性能，降低热应力，良好的阶梯覆盖，并且可以应用于许多基板类型和许多基板尺寸。 因此，如此沉积的封装层为诸如OLED器件的各种显示器件提供了良好的器件寿命。 另一方面，提供了一种在低温下在基板上沉积无定形碳材料的方法。 无定形碳材料可用于降低热应力并防止沉积的薄膜从基底上剥离。

公开(公告)号：US20080057220A1

公开(公告)日：2008-03-06

申请号：US11345244

申请日：2006-01-31

申请人： Robert Bachrach ,  Tae Kyung Won

发明人： Robert Bachrach ,  Tae Kyung Won

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/24 ,  C23C16/56

摘要： A method and apparatus for fabricating a solar cell and forming a p-n junction is disclosed. Solar cell p-n junction is formed by depositing a thin film of n-type phosphorus doped silicon material on a sheet from a mixture of precursors and annealing the sheet to obtain the p-n junction at a desired depth. In one embodiment, a plasma enhanced chemical vapor deposition chambers is used to deposit a phosphorus doped amorphous silicon film on a sheet surface by using precursors including a silicon-containing gas, a hydrogen-containing precursor, and a phosphorus-containing gas. In another embodiment, annealing furnace and/or rapid thermal processing chambers are used to anneal the sheet having the phosphorus doped amorphous silicon film deposited thereon.

摘要翻译： 公开了一种用于制造太阳能电池并形成p-n结的方法和装置。 太阳能电池p-n结通过从前体混合物沉积在片材上的n型磷掺杂硅材料的薄膜而退火而形成，以便在期望的深度获得p-n结。 在一个实施例中，通过使用包含含硅气体，含氢前体和含磷气体的前体，使用等离子体增强化学气相沉积室将磷掺杂非晶硅膜沉积在片材表面上。 在另一个实施例中，退火炉和/或快速热处理室用于退火其上沉积有磷掺杂的非晶硅膜的片材。

公开(公告)号：US06962732B2

公开(公告)日：2005-11-08

申请号：US09938435

申请日：2001-08-23

申请人： Tae Kyung Won ,  Takako Takehara ,  William R. Harshbarger

发明人： Tae Kyung Won ,  Takako Takehara ,  William R. Harshbarger

IPC分类号： C23C16/40 ,  C23C16/458 ,  C23C16/46 ,  H01L21/312 ,  H01L21/316 ,  B05D5/12 ,  H05H1/24

CPC分类号： C23C16/401 ,  C23C16/4586 ,  C23C16/46 ,  Y10T428/26

摘要： Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate temperature is controlled to establish a temperature profile particularly suited to the extreme temperature sensitivities of the deposition rates of organosilicate films such as those deposited from TEOS as a source material.

摘要翻译： 用于控制薄的有机硅酸盐膜沉积在基底上的厚度均匀性的方法，并且最终得到结果。 在可以通过CVD，PECVD，快速热处理等实现的膜沉积期间，控制衬底温度以建立特别适合于有机硅酸盐膜的沉积速率的极端温度敏感性的温度分布，例如沉积的那些 从TEOS作为源材料。

公开(公告)号：US20080153280A1

公开(公告)日：2008-06-26

申请号：US11614461

申请日：2006-12-21

申请人： Yanping Li ,  Yan Ye ,  Yong-Kee Chae ,  Tae Kyung Won ,  Ankur Kadam ,  Shuran Sheng ,  Liwei Li

发明人： Yanping Li ,  Yan Ye ,  Yong-Kee Chae ,  Tae Kyung Won ,  Ankur Kadam ,  Shuran Sheng ,  Liwei Li

IPC分类号： H01L21/44

CPC分类号： C23C14/086 ,  C23C14/0073 ,  H01L31/022466 ,  H01L31/1884 ,  Y02E10/50

摘要： Methods for sputter depositing a transparent conductive oxide (TCO) layer are provided in the present invention. The transparent conductive oxide layer may be utilized as a back reflector in a photovoltaic device. In one embodiment, the method includes providing a substrate in a processing chamber, forming a first portion of a transparent conductive oxide layer on the substrate by a first sputter deposition step, and forming a second portion of the transparent conductive oxide layer by a second sputter deposition step.

摘要翻译： 在本发明中提供溅射沉积透明导电氧化物（TCO）层的方法。 透明导电氧化物层可以用作光伏器件中的后反射器。 在一个实施例中，该方法包括在处理室中提供衬底，通过第一溅射沉积步骤在衬底上形成透明导电氧化物层的第一部分，以及通过第二溅射形成透明导电氧化物层的第二部分 沉积步骤。

公开(公告)号：US07879409B2

公开(公告)日：2011-02-01

申请号：US10898472

申请日：2004-07-23

申请人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

发明人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

IPC分类号： C08J7/04

CPC分类号： C23C16/0209 ,  C23C16/5096

摘要： We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate.

摘要翻译： 当在沉积室中顺序地处理多个基板时，我们具有提高膜的化学气相沉积（CVD）的沉积速率均匀性的方法。 该方法包括当衬底存在于沉积室中时，围绕衬底的处理体积内的至少一个处理体积结构的等离子体预热。 我们还有一种装置控制的方法，其可以在沉积室中顺次地串联处理多个基板的开始时调整几个基板的沉积时间，使得沉积膜厚度在处理期间保持基本恒定 系列底物。 将这些方法组合成单一方法提供了从基材到底物控制平均膜厚度方面的最佳总体结果。

公开(公告)号：US20080241355A1

公开(公告)日：2008-10-02

申请号：US11694353

申请日：2007-03-30

申请人： Tae Kyung Won ,  John M. White ,  Ya-Tang Yang

发明人： Tae Kyung Won ,  John M. White ,  Ya-Tang Yang

IPC分类号： B05D5/12

CPC分类号： H01L29/4908 ,  H01L29/66765 ,  H01L29/78666

摘要： Methods for depositing a gate insulator layer and a semiconductor layer onto a large area substrate with improved film uniformity, device mobility and stability are provided. The film properties of the gate insulator layer and the semiconductor layer are selected so that higher electron mobility (greater than 0.7 centimeters squared per voltage per second) is obtained, thereby efficiently enhancing the performance and stability of TFT devices. Improvements in film uniformity may also be realized.

摘要翻译： 提供了将膜绝缘体层和半导体层沉积到具有改进的膜均匀性，器件迁移率和稳定性的大面积衬底上的方法。 选择栅极绝缘体层和半导体层的膜特性，使得获得更高的电子迁移率（每电压每秒大于0.7厘米的平方），从而有效地提高TFT器件的性能和稳定性。 也可以实现膜均匀性的改善。

公开(公告)号：US07220687B2

公开(公告)日：2007-05-22

申请号：US10876440

申请日：2004-06-25

申请人： Tae Kyung Won

发明人： Tae Kyung Won

IPC分类号： H01L21/31

CPC分类号： C23C16/345 ,  C23C8/36

摘要： A method and apparatus for depositing a material layer onto a substrate is described. The method includes placing the substrate in a process chamber, delivering a mixture of precursors for the material layer into the process chamber, delivering a hydrogen gas into the process chamber to improve water-barrier performance of the material layer, controlling the temperature of the substrate to a temperature of about 100° C. or lower, applying an electric field and generating a plasma inside the process chamber, and depositing the material layer on the substrate. The material layer can be used as an encapsulating layer for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. The encapsulating layer thus deposited provides reduced surface roughness, improved water-barrier performance which can be applied to any substrate type including wafer, glass, and plastic film (e.g., PET, PEN, etc.) and any substrate size in the flat panel industry.

摘要翻译： 描述了将材料层沉积到基底上的方法和装置。 该方法包括将基板放置在处理室中，将用于材料层的前体的混合物输送到处理室中，将氢气输送到处理室中以改善材料层的防水性能，控制基板的温度 至约100℃或更低的温度，施加电场并在处理室内产生等离子体，并将材料层沉积在基底上。 材料层可以用作需要低温沉积工艺的各种显示应用的封装层，这是由于使用的下层材料的热不稳定性。 这样沉积的封装层提供降低的表面粗糙度，改善的防水性能，其可以应用于包括晶片，玻璃和塑料膜（例如，PET，PEN等）的任何基板类型以及平板工业中的任何基板尺寸 。