公开(公告)号：US20080153280A1

公开(公告)日：2008-06-26

申请号：US11614461

申请日：2006-12-21

申请人： Yanping Li ,  Yan Ye ,  Yong-Kee Chae ,  Tae Kyung Won ,  Ankur Kadam ,  Shuran Sheng ,  Liwei Li

发明人： Yanping Li ,  Yan Ye ,  Yong-Kee Chae ,  Tae Kyung Won ,  Ankur Kadam ,  Shuran Sheng ,  Liwei Li

IPC分类号： H01L21/44

CPC分类号： C23C14/086 ,  C23C14/0073 ,  H01L31/022466 ,  H01L31/1884 ,  Y02E10/50

摘要： Methods for sputter depositing a transparent conductive oxide (TCO) layer are provided in the present invention. The transparent conductive oxide layer may be utilized as a back reflector in a photovoltaic device. In one embodiment, the method includes providing a substrate in a processing chamber, forming a first portion of a transparent conductive oxide layer on the substrate by a first sputter deposition step, and forming a second portion of the transparent conductive oxide layer by a second sputter deposition step.

摘要翻译： 在本发明中提供溅射沉积透明导电氧化物（TCO）层的方法。 透明导电氧化物层可以用作光伏器件中的后反射器。 在一个实施例中，该方法包括在处理室中提供衬底，通过第一溅射沉积步骤在衬底上形成透明导电氧化物层的第一部分，以及通过第二溅射形成透明导电氧化物层的第二部分 沉积步骤。

公开(公告)号：US20080245414A1

公开(公告)日：2008-10-09

申请号：US11733184

申请日：2007-04-09

申请人： Shuran Sheng ,  Yong Kee Chae ,  Tae Kyung Won ,  Liwei Li ,  Soo Young Choi ,  Yanping Li ,  Joe Griffith Cruz

发明人： Shuran Sheng ,  Yong Kee Chae ,  Tae Kyung Won ,  Liwei Li ,  Soo Young Choi ,  Yanping Li ,  Joe Griffith Cruz

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  H01L31/0745 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： An improved PV solar cell structure and methods for manufacturing the same are provided. In one embodiment, a photovoltaic device includes a first photoelectric conversion unit, a first transparent conductive oxide layer and a first microcrystalline silicon layer disposed between and in contact with the photoelectric conversion unit and the transparent conductive oxide layer. In another embodiment, a method of forming a photovoltaic solar cell includes providing a substrate having a first transparent conductive oxide layer disposed thereon, depositing a first microcrystalline silicon layer on the transparent conductive oxide layer, and forming a first photoelectric conversion unit on the microcrystalline silicon layer.

摘要翻译： 提供了一种改进的PV太阳能电池结构及其制造方法。 在一个实施例中，光伏器件包括第一光电转换单元，第一透明导电氧化物层和设置在光电转换单元和透明导电氧化物层之间并与之接触的第一微晶硅层。 在另一实施例中，形成光伏太阳能电池的方法包括提供一个其上设置有第一透明导电氧化物层的衬底，在透明导电氧化物层上沉积第一微晶硅层，以及在微晶硅上形成第一光电转换单元 层。

公开(公告)号：US07964430B2

公开(公告)日：2011-06-21

申请号：US11752823

申请日：2007-05-23

申请人： Tae Kyung Won ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

发明人： Tae Kyung Won ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

IPC分类号： H01L21/332 ,  H01L21/00

CPC分类号： H01L31/022466 ,  H01L31/04 ,  H01L31/1884 ,  Y02E10/50 ,  Y10S438/94

摘要： Methods and apparatus for reducing defects on transparent conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transparent conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.

摘要翻译： 提供了减少透明导电氧化物（TCO）层缺陷的方法和装置。 在一个实施例中，用于在透明导电氧化物（TCO）层上沉积硅层的方法可以包括提供其上设置有TCO层的衬底，其中TCO层具有外围区域和电池集成区域，电池集成区域 其具有设置在其上的激光划线图案，将所述基板定位在设置在处理室中的基板支撑组件上，其中所述基板支撑组件具有与所述基板接触的粗糙表面，将阴影框架接触所述TCO层的周边区域， 衬底支撑组件，从而通过阴影框架在TCO层和衬底支撑件之间形成电接地路径，并且通过阴影框架的孔口在TCO层上沉积含硅层。

公开(公告)号：US08203071B2

公开(公告)日：2012-06-19

申请号：US12178289

申请日：2008-07-23

申请人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

发明人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

IPC分类号： H01L31/00

CPC分类号： H01L31/1824 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. Embodiments of the present invention also include an improved thin film silicon solar cell, and methods and apparatus for forming the same, where one or more of the layers in the solar cell comprises at least one amorphous silicon layer that has improved electrical characteristics and mechanical properties, and is capable of being deposited at rates many times faster than conventional amorphous silicon deposition processes.

摘要翻译： 本发明的实施例一般涉及太阳能电池及其形成方法和装置。 更具体地，本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 本发明的实施例还包括改进的薄膜硅太阳能电池及其形成方法和装置，其中太阳能电池中的一个或多个层包括至少一个具有改善的电特性和机械性能的非晶硅层 ，并且能够以比常规非晶硅沉积工艺快许多倍的速率沉积。

公开(公告)号：US20090020154A1

公开(公告)日：2009-01-22

申请号：US12178289

申请日：2008-07-23

申请人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

发明人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

IPC分类号： H01L31/00 ,  H01L21/20

CPC分类号： H01L31/1824 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. Embodiments of the present invention also include an improved thin film silicon solar cell, and methods and apparatus for forming the same, where one or more of the layers in the solar cell comprises at least one amorphous silicon layer that has improved electrical characteristics and mechanical properties, and is capable of being deposited at rates many times faster than conventional amorphous silicon deposition processes.

摘要翻译： 本发明的实施例一般涉及太阳能电池及其形成方法和装置。 更具体地，本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 本发明的实施例还包括改进的薄膜硅太阳能电池及其形成方法和装置，其中太阳能电池中的一个或多个层包括至少一个具有改善的电特性和机械性能的非晶硅层 ，并且能够以比常规非晶硅沉积工艺快许多倍的速率沉积。

公开(公告)号：US08083853B2

公开(公告)日：2011-12-27

申请号：US10889683

申请日：2004-07-12

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US20110041873A1

公开(公告)日：2011-02-24

申请号：US12925767

申请日：2010-10-28

申请人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

发明人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

IPC分类号： B08B7/00

CPC分类号： C23C16/0209 ,  C23C16/5096

摘要： We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate.

摘要翻译： 当在沉积室中顺序地处理多个基板时，我们具有提高膜的化学气相沉积（CVD）的沉积速率均匀性的方法。 该方法包括当衬底存在于沉积室中时，围绕衬底的处理体积内的至少一个处理体积结构的等离子体预热。 我们还有一种装置控制的方法，其可以在沉积室中顺次地串联处理多个基板的开始时调整几个基板的沉积时间，使得沉积膜厚度在处理期间保持基本恒定 系列底物。 将这些方法组合成单一方法提供了从基材到底物控制平均膜厚度方面的最佳总体结果。

公开(公告)号：US20080302303A1

公开(公告)日：2008-12-11

申请号：US11759599

申请日：2007-06-07

申请人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： C23C16/00 ,  B05B1/14

CPC分类号： C23C16/24 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32449

摘要： Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.

摘要翻译： 提供了具有由气体分配板产生的流动梯度的方法和装置。 在一个实施例中，该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。 用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板，并且具有由四个侧面分开的至少四个角。 气体分配板还包括通过气体分配板形成的第一多个扼流圈，位于角部的第一多个扼流圈，以及通过气体分配板形成的第二多个扼流圈，沿着侧面设置的第二多个扼流圈 在所述角区域之间的所述气体分配板中，所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。

公开(公告)号：US07183197B2

公开(公告)日：2007-02-27

申请号：US11133130

申请日：2005-05-18

申请人： Tae Kyung Won ,  Sanjay Yadav

发明人： Tae Kyung Won ,  Sanjay Yadav

IPC分类号： H01L21/4763

CPC分类号： C23C16/345 ,  C23C8/36

摘要： A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and depositing the material layer on the substrate at low temperature. The material layer can be used as an encapsulating layer for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. In one aspect, the encapsulating layer includes one or more material layers (multilayer) having one or more barrier layer materials and one or more low-dielectric constant materials. The encapsulating layer thus deposited provides reduced surface roughness, improved water-barrier performance, reduce thermal stress, good step coverage, and can be applied to many substrate types and many substrate sizes. Accordingly, the encapsulating layer thus deposited provides good device lifetime for various display devices, such as OLED devices. In another aspect, a method of depositing an amorphous carbon material on a substrate at low temperature is provided. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.

摘要翻译： 描述了将材料层沉积到基底上的方法和装置。 该方法包括将用于材料层的前体的混合物输送到处理室中，并在低温下将材料层沉积在基底上。 材料层可以用作需要低温沉积工艺的各种显示应用的封装层，这是由于使用的下层材料的热不稳定性。 在一个方面，封装层包括具有一个或多个势垒层材料和一种或多种低介电常数材料的一种或多种材料层（多层）。 由此沉积的封装层提供降低的表面粗糙度，改善的防水性能，降低热应力，良好的阶梯覆盖，并且可以应用于许多基板类型和许多基板尺寸。 因此，如此沉积的封装层为诸如OLED器件的各种显示器件提供了良好的器件寿命。 另一方面，提供了一种在低温下在基板上沉积无定形碳材料的方法。 无定形碳材料可用于降低热应力并防止沉积的薄膜从基底上剥离。

公开(公告)号：US08906813B2

公开(公告)日：2014-12-09

申请号：US13886175

申请日：2013-05-02

申请人： Tae Kyung Won ,  Seon-Mee Cho ,  Soo Young Choi ,  Beom Soo Park ,  Dong-Kil Yim ,  John M. White ,  Jozef Kudela

发明人： Tae Kyung Won ,  Seon-Mee Cho ,  Soo Young Choi ,  Beom Soo Park ,  Dong-Kil Yim ,  John M. White ,  Jozef Kudela

IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/511 ,  C23C16/54

CPC分类号： H01L21/0262 ,  C23C16/401 ,  C23C16/45578 ,  C23C16/511 ,  C23C16/545 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274

摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.

摘要翻译： 本文描述了用于处理衬底的方法。 方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率 以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。