Abstract:
The invention relates to a semiconductor memory device, a system with a semiconductor memory device, and a method for operating a semiconductor memory device, comprising the steps of reading out a data value, in particular a CAS latency time data value (CL) stored in a memory; activating or deactivating a device provided on said semiconductor memory device in support of a high speed operation, as a function of the data value (CL) stored.
Abstract:
An apparatus for measurement of the thickness of thin layers by means of X-rays using an X-ray tube which emits X-rays which are directed at a layer to be measured, has at least one aperture apparatus arranged between the X-ray tube and the layer to be measured. The apparatus includes an area absorbing X-rays and an aperture opening. At least one aperture opening in the aperture apparatus has a geometric shape which, seen in the beam direction, projects an area which at least in places is matched to the geometry of the layer to be measured.
Abstract:
A method for fabricating at least one mesa or ridge structure in a layer or layer sequence, in which a sacrificial layer (4) is applied and patterned above the layer or layer sequence. A mask layer is applied and patterned above the sacrificial layer for definition of the mesa or ridge dimensions. The sacrificial layer (4) and of the layer or layer sequence are removed so that the mesa or ridge structure is formed in the layer or layer sequence. A part of the sacrificial layer (4) is selectively removed from the side areas thereof which have been uncovered in the previous step, so that a sacrificial layer remains which is narrower in comparison with a layer that has remained above the sacrificial layer as seen from the layer or layer sequence. A coating is applied at least to the sidewalls of the structure produced in the previous steps so that the side areas of the residual sacrificial layer are not completely overformed by the coating material. The sacrificial layer (4) is removed so that the layer that has remained above the sacrificial layer as seen from the layer or layer sequence is lifted off. A method is also disclosed for fabricating at least one gain-controlled laser diode in a layer sequence, in which method steps analogous to those described above are employed.
Abstract:
A method for writing and reading data is performed on a dynamic memory circuit. The memory circuit has memory cells that can be addressed via word lines and bit lines. A word line is activated in the event of addressing of a memory area with a specific address. A word line has a plurality of mutually separate word line sections. Via the bit lines, in the event of addressing with the specific address, in parallel, a first number of data can be written to memory cells addressed by the address or the first number of data can be read from memory cells addressed by the address. In the event of addressing with a specific address, only a portion of the word line sections are activated, in order that only a portion of the memory cells connected to the word line are written to in parallel or read from in parallel.
Abstract:
A method for the nondestructive measurement of the thickness of thin layers having a probe, having a first coil device on an inner core, the geometrical center of which coil device and the geometrical center of at least one second coil device coincide, the at least one second coil device partially surrounding the first coil device, and an evaluation unit, to which signals of the coil devices are emitted during a measurement for ascertaining the layer thickness. A circuit is provided, by which the first and the at least one second coil devices are excited sequentially during a measurement.
Abstract:
A digital memory circuit contains a plurality of areas each having memory cells disposed in matrix form in rows and columns. The columns of each memory area is subdivided into a plurality of adjacent groups which each form a segment. For each segment, provision is made of a separate set of two-conductor local data lines which lead via line switches to two-conductor master data lines common to all the memory areas. Furthermore, precharge devices are provided in order to equalize the potentials of the conductors of the local data lines and the conductors of the master data lines, the equalization potential for the local data lines being different than the equalization potential for the master data lines. A line switch control device provides for closing only of the line switches on those local data lines which belong to the segment in which a write or read mode takes place.
Abstract:
A monolithically integrable inductor containing a layer sequence of conductive layers and insulating layers that are stacked mutually alternately above one another is described. The conductive layers are configured in such a way that they form a coil-type structure around a central region, in which giant magnetic resistance materials can be provided.
Abstract:
A centrifuge rotor for a free jet centrifuge for cleaning lubricating oil of an internal combustion engine. The rotor has an inlet, at least one drive nozzle outlet, and a sediment deposition surface interiorly in the rotor. A bearing is provided for rotatably mounting the rotor in a surrounding housing where the bearing includes a friction bearing which simultaneously forms the rotor inlet and a roller bearing which is receivable in a bearing receptacle formed in the surrounding housing. The roller bearing is sealed off from the rotor interior.
Abstract:
An integrated circuit has a differential amplifier in a basic circuit having two input transistors, a load element and a power source. The power source has an N-type channel MOS transistor whose controlled path is connected to the input transistors and to a supply terminal of the power source. A control terminal of the transistor is connected to a potential that is positive with respect to a reference potential. The supply terminal of the power source is connected to a potential which is negative with respect to the reference potential and which is made available by a voltage source for switching off cell field transistors of a DRAM memory. The gate-source voltage that is increased in this way improves the behavior of the circuit with respect to fluctuations in potential and permits more favorable dimensioning of the transistor.