摘要:
An integrated circuit has a differential amplifier in a basic circuit having two input transistors, a load element and a power source. The power source has an N-type channel MOS transistor whose controlled path is connected to the input transistors and to a supply terminal of the power source. A control terminal of the transistor is connected to a potential that is positive with respect to a reference potential. The supply terminal of the power source is connected to a potential which is negative with respect to the reference potential and which is made available by a voltage source for switching off cell field transistors of a DRAM memory. The gate-source voltage that is increased in this way improves the behavior of the circuit with respect to fluctuations in potential and permits more favorable dimensioning of the transistor.
摘要:
An integrated memory has a memory cell array, which is subdivided into a plurality of separate segments. A first and a second local word line in different segments together form a common global word line. The global word line is decoded via a row decoder. The first and second local word lines are connected to a column decoder in such a way that they can be decoded individually and segment by segment in a manner dependent on a column address. The memory thus allows fast and current-saving activation of a word line.
摘要:
A monolithically integrable inductor containing a layer sequence of conductive layers and insulating layers that are stacked mutually alternately above one another is described. The conductive layers are configured in such a way that they form a coil-type structure around a central region, in which giant magnetic resistance materials can be provided.
摘要:
A dynamic semiconductor memory device of the random access type having an initialization circuit which controls the switch-on operation of the semiconductor memory device and of its circuit components. The initialization circuit supplies a supply voltage stable signal once the supply voltage has been stabilized after the switching-on of the semiconductor memory device. The initialization circuit has an advance detector circuit, which detects a predetermined level state of an externally applied clock control signal chronologically before the supply voltage stable signal is generated and, as a reaction to this, supplies a first enable signal for unlatching the control circuit provided for the proper operation of the semiconductor memory device.
摘要:
The invention relates to a measuring probe for measuring the thickness of thin layers with a housing, having at least one sensor element, which is received in the housing at least slightly moveably along a longitudinal axis and which comprises at least one winding device, which is allocated to the longitudinal axis, having a spherical positioning cap facing the outer front face of the housing, said cap being arranged in the longitudinal axis, wherein the spherical positioning cap has a basic body that has a cylindrical core section and a pole cap arranged on a front face of the core section, wherein the winding device is allocated to the spherical positioning cap, said winding device being formed from a discoidal or annular carrier with at least one Archimedean coil arranged thereon and with the basic body consisting of a ferritic material and the pole cap consisting of a hard metal.
摘要:
The invention relates to a calibration standard, especially for the calibration of devices for the non-destructive measurement of the thickness of thin layers with a carrier plate (16) of a basic material and a standard (17) applied on the carrier plate (16), said standard having the thickness of the layer at which the device is to be calibrated, wherein that a holding device (22) arranged on the basic body (12) of the calibration standard (11) receives at least the standard (17) to the basic body (12) such that upon setting a measuring probe of the device for the non-destructive measurement of thin layers onto the standard (17), its position will be changeable by at least one degree of freedom.
摘要:
A method for producing an integrated memory module containing a command decoding device that responds to external operation commands to set operating states of the memory module for carrying out operations in accordance with a predetermined specification of the memory module. The command decoding device is formed with a decision memory containing memory locations Mi,j, the storage capacity of which suffices to receive, for an arbitrary specification from a plurality of different specifications, a decision information item specifying whether or how the second operation command of selected pairs of two directly successive operation commands is to be executed. After integration of the command decoding device thus formed, the decision information items demanded in the case of the predetermined specification are written to the memory locations of the decision memory.
摘要:
An apparatus for non-destructive measurement of the thickness of thin layers, has a housing and a probe which is connected to an evaluation unit and to which signals are emitted during a measurement for determining the layer thickness, and having a display apparatus which indicates at least the measurement data from the evaluation unit. At least one further display apparatus is positioned on the housing away from the plane of the first display apparatus.
摘要:
A prestage for generating a control signal for an output driver of an integrated circuit, wherein the integrated circuit can be provided with a reference potential and a supply potential fixed in relation to the reference potential, comprises an input for receiving an input signal from the integrated circuit, a circuitry for generating an output signal based on the received input signal, an output for outputting the generated output signals as control signal for an output driver as well as a current source, which is effectively connected to the circuitry. Thereby, the circuitry for generating an output signal and the current source are connected in series and connected to a first potential and a second potential such that a prestage potential difference across the series circuit is higher than a supply potential difference between the supply potential and the reference potential. Such a prestage has the advantage that it is less sensitive against variations on the reference potential or the reference potential, respectively, than conventional circuitries and can generate an output signal with well defined rise times.
摘要:
The present invention relates to an input circuit for receiving an input signal in an integrated circuit, having a differential amplifier whose first input can have a predetermined reference voltage applied to it and whose second input can have the input signal applied to it, and having a current source for operating the differential amplifier at its operating point, wherein a setting circuit is connected to the current source in order to set the operating point of the differential amplifier in an optimum manner on the basis of the predetermined reference voltage.