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    Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
    32.
    发明授权
    Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory 有权
    磁阻效应元件，磁头，磁再现装置和磁存储器

    公开(公告)号：US07843669B2

    公开(公告)日：2010-11-30

    申请号：US12366972

    申请日：2009-02-06

    申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/39

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

    摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

    摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

    Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus
    33.
    发明授权
    Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus 有权
    磁阻元件，磁头和磁记录/重放装置

    公开(公告)号：US07719799B2

    公开(公告)日：2010-05-18

    申请号：US12314232

    申请日：2008-12-05

    申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

    发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

    IPC分类号： G11B5/127

    CPC分类号： H01F10/324 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3268

    摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.

    摘要翻译： 磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层 磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括 位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。

    Magnetoresistive effect element, and magnetic head and magnetic reproducing apparatus including the same
    34.
    发明授权
    Magnetoresistive effect element, and magnetic head and magnetic reproducing apparatus including the same 有权
    磁阻效应元件和包括该磁阻效应元件的磁头和磁性重放装置

    公开(公告)号：US07515387B2

    公开(公告)日：2009-04-07

    申请号：US11248296

    申请日：2005-10-13

    申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

    发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

    IPC分类号： G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B5/398 ,  G11B2005/3996

    摘要： A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and a nonmagnetic intermediate layer interposed therebetween. The nonmagnetic intermediate layer has a conduction part disposed in an insulation layer and made of a nonmagnetic metal material. The ferromagnetic film stacked on an upper side of the nonmagnetic intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the spin-valve magnetoresistive effect film.

    摘要翻译： 自旋阀磁阻效应膜包括磁化固定层，磁化自由层和插入其间的非磁性中间层。 非磁性中间层具有设置在绝缘层中并由非磁性金属材料制成的导电部分。 层叠在非磁性中间层的上侧的铁磁性膜，构成磁化固定层的铁磁膜和磁化自由层的铁磁膜具有垂直取向部，该垂直取向部设置在导电部的上方，晶体生长方向大致垂直于 薄膜平面和存在于除了垂直定向部分之外的部分中的非垂直取向部分。 磁阻效应元件具有一对在垂直于自旋阀磁阻效应膜的膜平面的方向上通过感测电流的电极。

    Magnetoresistive effect element, magnetic head and magnetic recording/reproducing apparatus
    37.
    发明申请
    Magnetoresistive effect element, magnetic head and magnetic recording/reproducing apparatus 有权
    磁阻效应元件，磁头和磁记录/重放装置

    公开(公告)号：US20070188945A1

    公开(公告)日：2007-08-16

    申请号：US11702582

    申请日：2007-02-06

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

    IPC分类号： G11B5/127

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3281 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetoresistive effect element includes a fixed magnetization layer; a free magnetization layer; a nonmagnetic spacer layer between the fixed magnetization layer and the free magnetization layer; and an insertion layer disposed on an opposite side of the free magnetization layer from the nonmagnetic spacer layer, wherein the first insulating layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al(aluminum), Si(silicon), Mg(magnesium), Ta(tantalum) and Zn(zinc) as a major constituent, and the insertion layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al(aluminum), Si(silicon), Mg(magnesium), Ta(tantalum) and Zn(zinc) as a major constituent.

    摘要翻译： 磁阻效应元件包括固定磁化层; 自由磁化层; 在固定磁化层和自由磁化层之间的非磁性间隔层; 以及插入层，其设置在所述自由磁化层与所述非磁性间隔层的相对侧上，其中，所述第一绝缘层具有氧化物，氮化物或氮氧化物，所述氧化物，氮化物或氮氧化物包含选自由Al组成的组中的至少一种元素 铝），Si（硅），Mg（镁），Ta（钽）和Zn（锌）作为主要成分，并且所述插入层具有氧化物，氮化物或氧氮化物，其包含至少一种选自 以Al（铝），Si（硅），Mg（镁），Ta（钽）和Zn（锌）为主要成分的基团。

    High-frequency oscillator
    38.
    发明申请
    High-frequency oscillator 有权
    高频振荡器

    公开(公告)号：US20070109147A1

    公开(公告)日：2007-05-17

    申请号：US11524238

    申请日：2006-09-21

    申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

    发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

    IPC分类号： G08G1/16

    CPC分类号： H03B15/006 ,  B82Y25/00 ,  G01S7/006 ,  G01S7/35 ,  G01S13/345 ,  G01S2013/936 ,  H01F10/3259 ,  H01F10/329 ,  Y10T428/24942

    摘要： A high-frequency oscillator includes a high-frequency oscillation element having a magnetization pinned layer whose magnetization direction is pinned substantially in one direction, an oscillation layer formed of a magnetic material which generates a high-frequency oscillation phenomenon when a current is supplied, an intermediate layer provided between the magnetization pinned layer and the oscillation layer, the intermediate layer having an insulation layer and current paths which pass through the insulation layer in a thickness direction, and a pair of electrodes which supply a current perpendicularly to a plane of a stacked film including the magnetization pinned layer, the intermediate layer and the oscillation layer.

    摘要翻译： 高频振荡器包括：高频振荡元件，具有磁化被钉扎层，其磁化方向基本上被固定在一个方向上;振动层，其由在供应电流时产生高频振荡现象的磁性材料形成， 中间层设置在磁化被钉扎层和振荡层之间，中间层具有绝缘层和沿厚度方向穿过绝缘层的电流路径，以及一对电极，其垂直于堆叠的平面提供电流 膜包括磁化固定层，中间层和振荡层。

    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
    39.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY 有权
    磁阻效应元件，磁头，磁力再生装置和磁记忆

    公开(公告)号：US20070081276A1

    公开(公告)日：2007-04-12

    申请号：US11609557

    申请日：2006-12-12

    申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

    摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

    摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。