Recording/reproducing apparatus
    31.
    发明申请

    公开(公告)号:US20060092811A1

    公开(公告)日:2006-05-04

    申请号:US11192396

    申请日:2005-07-29

    IPC分类号: G11B7/00

    摘要: In a recording/reproducing apparatus having a large number of probes, being still usable continuously when several pieces of the probes are in trouble, wherein a plural number of probes are so disposed that they can make recording and/or reproducing onto the same recording area, which is in charge of the probes, respectively, and when defect, such as, a trouble is generated within a first probe, that defect is detected, automatically, so as to exchanged into a spare probe built within the frame, thereby compensating the defect.

    Plasma treating method and apparatus therefor
    34.
    发明授权
    Plasma treating method and apparatus therefor 失效
    等离子体处理方法及其设备

    公开(公告)号:US4943361A

    公开(公告)日:1990-07-24

    申请号:US289512

    申请日:1988-12-27

    摘要: The present invention relates to a plasma treating method and apparatus therefor, wherein a plasma treating method is carried out in which an electric field is generated between the electrodes of parallel plate electrodes (anode and cathode), and a magnetic field starting from the anode side, toward the cathode side, the other of said parallel plate electrodes, and back to the anode side, is used. The magnetic field has relatively short lines of magnetic force where it orthogonally intersects the electric field, near the cathode, as compared to that of lines of magnetic force parallel to the electric field, so as to make a cycloidal motion of electrons restricted and to cause mainly a cyclotronic motion of electrons to occur in large quantities. A power supply is connected to the cathode, one of said parallel plate electrodes, and a magnetic field generating means is provided on the anode side, the other of said parallel plate electrodes, at the counter-cathode side thereof, the said magnetic field generating means having NS poles in proximity to each other to provide the previously discussed magnetic lines of force, so as to make the cycloidal motion of electrons restricted and to cause the cyclotronic motion of electrons to occur in large quantities. By use of such method and apparatus, it is made possible to facilitate a treatment of a specimen at a high rate and uniformly without damaging the specimen.

    摘要翻译: 等离子体处理方法及其设备技术领域本发明涉及一种等离子体处理方法及其设备,其中进行在平行板电极(阳极和阴极)的电极之间产生电场的等离子体处理方法和从阳极侧开始的磁场 ,朝向阴极侧,使用另一个所述平行板电极,并且返回到阳极侧。 与平行于电场的磁力线相比,磁场具有相对短的磁力线,其与阴极附近的电场正交相交,从而使电子的摆线运动受到限制,并导致 主要是电子发生大量的自旋运动。 电源连接到阴极,所述平行板电极之一和磁场产生装置设置在阳极侧,另一个平行板电极在其反向阴极侧产生所述磁场产生 意味着具有彼此接近的NS极以提供先前讨论的磁力线,以便使电子的摆线运动受到限制并且引起电子的大量循环运动。 通过使用这种方法和装置,能够以高速率和均匀的方式促进样品的处理,而不会损害试样。

    Bookbinding method, and bookbinding unit and image-forming system equipped with the same
    37.
    发明授权
    Bookbinding method, and bookbinding unit and image-forming system equipped with the same 有权
    装订方式,装订单位和配备相同的图像形成系统

    公开(公告)号:US08442422B2

    公开(公告)日:2013-05-14

    申请号:US12147431

    申请日:2008-06-26

    IPC分类号: G03G15/00 B42C11/00

    摘要: Bookbinding unit that in binding an inner-leave sheet bundle together with a cover enables accurate binding of the cover onto the bundle's spine and meanwhile forms folding scores in the cover flaps. Furnished with: a stacking tray unit; a process path for sequentially transporting bundles from the tray unit into adhesive-application and cover-binding locations; an adhesive application unit, disposed in the adhesive-application location, that applies adhesive to bundles from the tray unit; a cover-supply unit that supplies covers to the cover-binding location; and a cover-binding unit, disposed in the cover-binding location, that binds sheet bundles from the adhesive-application location together with covers. The cover-binding unit has a shoulder-pressing unit that forms spine creases in the spine portion of the covers, and a flap-pressing unit that forms folds in the spine-creased sides of the covers.

    摘要翻译: 装订单元在将内页纸捆绑在一起时,可以将盖子精确地捆绑在捆的脊柱上,同时在盖板上形成折叠分数。 配有:堆放托盘单元; 用于将束从托盘单元顺序地输送到粘合剂施加和覆盖装订位置的处理路径; 设置在所述粘合剂施加位置的粘合剂施加单元,其从所述托盘单元向束施加粘合剂; 封盖供应单元,其向盖装订位置供应盖; 以及设置在所述封盖装订位置中的覆盖装订单元,其与所述粘合剂施加位置一起将盖片与盖一起粘合。 覆盖装订单元具有肩部加压单元,其在盖的脊部中形成脊部折痕,以及折板按压单元,其在盖的脊骨折边中形成褶皱。

    Front Release Buckle
    38.
    发明申请
    Front Release Buckle 审中-公开
    前扣带

    公开(公告)号:US20130091671A1

    公开(公告)日:2013-04-18

    申请号:US13806155

    申请日:2010-06-24

    IPC分类号: A44B11/26

    CPC分类号: A44B11/263 Y10T24/45545

    摘要: A front release buckle of the invention includes a plug and a socket. The plug includes: a base; a leg that projects from the base; and an engaging portion formed to the leg. The socket includes: a body having an insertion opening; a housing space that is defined inside the body and capable of housing the leg inserted through the insertion opening; an engaged portion that is formed on the body and engageable with the engaging portion; and a manipulation portion that disengages an engagement between the engaging portion and the engaged portion. The plug and the socket are formed to be flat. The leg is flat and flexible in a thickness direction. The engaging portion and the engaged portion are engaged with each other in the thickness direction. The engaging portion projects in a width direction of the leg and is formed within the thickness of the leg.

    摘要翻译: 本发明的前释放带扣包括插头和插座。 插头包括:底座; 从基地开始的一条腿; 以及形成在腿部的接合部。 插座包括:具有插入开口的主体; 容纳空间,其限定在所述主体内部并且能够容纳插入穿过所述插入开口的所述腿部; 接合部,其形成在所述主体上并与所述接合部接合; 以及解除接合部和被接合部之间的接合的操作部。 插头和插座形成为平坦的。 该腿在厚度方向上是扁平的和柔性的。 接合部和被接合部在厚度方向上彼此接合。 接合部在腿的宽度方向上突出并形成在腿的厚度内。

    Method for fabricating semiconductor device
    39.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US08034693B2

    公开(公告)日:2011-10-11

    申请号:US12493673

    申请日:2009-06-29

    IPC分类号: H01L21/678

    摘要: A method for fabricating a semiconductor device includes the steps of forming an insulating film on a semiconductor substrate, forming a plurality of wiring trenches in the insulating film, forming a plurality of wirings in the plurality of wiring trenches, forming a resist mask having an opening for selectively exposing one of regions between the plurality of wirings, on the insulating film and the plurality of wirings, forming an air gap trench by removing the insulating film from the selectively exposed one of the regions between the plurality of wirings by etching using the resist mask, and forming an air gap in the air gap trench by depositing an inter-layer insulating film over the plurality of wirings after removal of the resist mask.

    摘要翻译: 一种制造半导体器件的方法包括以下步骤:在半导体衬底上形成绝缘膜,在绝缘膜中形成多个布线沟槽,在多个布线沟槽中形成多个布线,形成具有开口的抗蚀剂掩模 用于选择性地暴露多个布线中的一个区域,在绝缘膜和多个布线之间,通过使用抗蚀剂通过蚀刻从多个布线中的选择性暴露的一个区域中去除绝缘膜而形成气隙沟槽 掩模,并且在除去抗蚀剂掩模之后,在多个布线之间沉积层间绝缘膜,在气隙沟槽中形成气隙。

    METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LAMP
    40.
    发明申请
    METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LAMP 有权
    制备III类氮化物半导体发光元件的方法,III类氮化物半导体发光元件和灯

    公开(公告)号:US20110163349A1

    公开(公告)日:2011-07-07

    申请号:US13119127

    申请日:2009-09-14

    IPC分类号: H01L33/30 H01L33/36

    摘要: The present invention provides a method for manufacturing a group III nitride semiconductor light emitting element, with which warping can be suppressed upon the formation of respective layers on the substrate, a semiconductor layer including a light emitting layer of excellent crystallinity can be formed, and excellent light emission characteristics can be obtained; such a group III nitride semiconductor light emitting element; and a lamp. Specifically disclosed is a method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.1 to 30 μm and at least a part of the edge of the substrate warping toward the principal plane at room temperature, is prepared as the substrate; the X-ray rocking curve full width at half maximum (FWHM) of the (0002) plane is 100 arcsec or less and the X-ray rocking curve FWHM of the (10-10) plane is 300 arcsec or less, in a state where the intermediate layer has been formed on the substrate and where thereafter the underlayer and the n-type contact layer are formed on the intermediate layer; and furthermore the n-type cladding layer, the light emitting layer, the p-type cladding layer, and the p-type contact layer are formed on the n-type contact layer.

    摘要翻译: 本发明提供一种制造III族氮化物半导体发光元件的方法,可以在基板上形成各层的同时抑制翘曲,可以形成包括具有优异结晶性的发光层的半导体层,并且优异 可获得发光特性; 这样的III族氮化物半导体发光元件; 和一盏灯。 具体公开了一种III族氮化物半导体发光元件的制造方法,其中中间层,下层,n型接触层,n型包覆层,发光层,p型包覆层 和p型接触层依次层叠在基板的主平面上,其中直径为4英寸(100mm)以上的基板,其翘曲度H在0.1〜30的范围内 并且准备在室温下朝向主平面翘曲的基板的边缘的至少一部分作为基板; (0002)面的X射线摇摆曲线半峰全宽(FWHM)为100弧秒以下,(10-10)面的X射线摇摆曲线FWHM为300arcsec以下,处于 其中中间层已经形成在衬底上,然后在中间层上形成底层和n型接触层; 此外,在n型接触层上形成n型包覆层,发光层,p型覆层和p型接触层。