公开(公告)号：US5476808A

公开(公告)日：1995-12-19

申请号：US065681

申请日：1993-05-11

Applicant: Takahisa Kusaka ,  Hideo Kanbe ,  Akio Izumi ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Asai

Inventor： Takahisa Kusaka ,  Hideo Kanbe ,  Akio Izumi ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Asai

IPC: H01L27/148 ,  H01L31/0288 ,  H01L31/103 ,  H04N5/335 ,  H04N5/341 ,  H04N5/365 ,  H04N5/367 ,  H04N5/369 ,  H04N5/372 ,  H01L21/339

CPC classification number: H01L31/103 ,  H01L27/14831 ,  H01L31/0288 ,  Y02E10/50 ,  Y10S438/909

Abstract: In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

Abstract translation: 在CCD固体摄像装置中，其中感光部分由在第一P型阱区域和形成在N型硅衬底上的N型杂质扩散区域之间的PN结形成的光电二极管构成，N 型杂质扩散区通过离子注入单一砷（As）形成。 根据该CCD固体摄像装置，可以减少图像感测画面上的亮度缺陷，这是图像感测画面遇到的缺陷之一。 此外，构造PN结的n型杂质扩散区域的尺寸可以减小，并且可以使CCD固态图像感测装置本身尺寸更小。 此外，还提供了一种制造CCD固态图像感测装置的方法。

公开(公告)号：US08652864B2

公开(公告)日：2014-02-18

申请号：US12903945

申请日：2010-10-13

Applicant: Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

Inventor： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC: H01L21/00

CPC classification number: H01L27/1463 ,  H01L27/14643

Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

公开(公告)号：US08598640B2

公开(公告)日：2013-12-03

申请号：US13211362

申请日：2011-08-17

Applicant: Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

Inventor： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC: H01L31/113 ,  H01L27/146

CPC classification number: H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Abstract translation: 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

公开(公告)号：US20100203666A1

公开(公告)日：2010-08-12

申请号：US12771925

申请日：2010-04-30

Applicant: Hiroki Endo ,  Hideshi Abe

Inventor： Hiroki Endo ,  Hideshi Abe

IPC: H01L31/18

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14647 ,  H04N9/045 ,  H04N2209/045

Abstract: A solid-state image device is provided which has a semiconductor substrate, pixels A each containing a photoelectric conversion portion in which at least two PN junction parts are provide in a depth direction of the semiconductor substrate, pixels B each containing a photoelectric conversion portion in which at least one PN junction part is provided, first color filters provided above the pixels A, second color filters provided above the pixels B; and a detection mechanism for detecting a first color signal and a second color signal from the two PN junction parts of each of the pixels A and a third color signal from the PN junction part of each of the pixels B. According to the above solid-state image device, light can be more efficiently used than a color filter separation method, and superior color reproducibility to that of a three-well structure can be realized.

Abstract translation: 提供一种具有半导体衬底的固态图像器件，每个像素A包含其中在半导体衬底的深度方向上提供至少两个PN结部分的光电转换部分，每个像素B包含光电转换部分 提供至少一个PN结部分，设置在像素A上方的第一滤色器，设置在像素B上方的第二滤色器; 以及用于从每个像素A的两个PN结部分检测第一颜色信号和第二颜色信号的检测机构，以及来自每个像素B的PN结部分的第三颜色信号。根据上述固体 - 可以比滤色器分离方法更有效地使用光，并且可以实现与三孔结构的颜色再现性优异的颜色再现性。

公开(公告)号：US20100123811A1

公开(公告)日：2010-05-20

申请号：US12619292

申请日：2009-11-16

Applicant: Hideshi Abe

Inventor： Hideshi Abe

IPC: H04N5/335 ,  G01J1/04 ,  H01L31/0232

CPC classification number: H04N5/335 ,  G01J1/02 ,  G01J1/0209 ,  G01J1/0214 ,  G01J1/04 ,  G01J1/0422 ,  G01J1/06 ,  G01J1/4228 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14641 ,  H01L27/14685

Abstract: A solid-state imager includes a photoelectric conversion region for photoelectrically converting a light beam received on a light receiving surface thereof into a signal charge and a waveguide path for guiding the light beam to the light receiving surface. The waveguide path includes a plurality of waveguide members, each waveguide member guiding a light beam incident on a light incident surface thereof to a light output surface thereof. The plurality of waveguide members are laminated on the light receiving surface. A first waveguide member closest to the light receiving surface from among the plurality of waveguide members faces the light receiving surface and is smaller in area than a light incident surface of a second waveguide member farthest from the light receiving surface from among the plurality of waveguide members.

Abstract translation: 固态成像器包括光电转换区域，用于将其光接收表面上接收的光束光电转换为信号电荷，以及用于将光束引导到光接收表面的波导路径。 波导路径包括多个波导构件，每个波导构件将入射到其光入射表面上的光束引导到其光输出表面。 多个波导构件层压在光接收表面上。 从多个波导构件中最靠近受光面的第一波导构件面对光接收面，并且与多个波导构件中离光接收面最远的第二波导构件的光入射面相比面积小 。

公开(公告)号：US20090317932A1

公开(公告)日：2009-12-24

申请号：US12548907

申请日：2009-08-27

Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

IPC: H01L21/50

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.

公开(公告)号：US20090315134A1

公开(公告)日：2009-12-24

申请号：US12548931

申请日：2009-08-27

Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

IPC: H01L33/00

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.

公开(公告)号：US20090078976A1

公开(公告)日：2009-03-26

申请号：US12277958

申请日：2008-11-25

Applicant: Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

Inventor： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC: H01L27/146

CPC classification number: H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Abstract translation: 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

公开(公告)号：US07420234B2

公开(公告)日：2008-09-02

申请号：US11318176

申请日：2005-12-23

Applicant: Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

Inventor： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC: H01L31/062 ,  H01L31/113 ,  H01L31/0232

CPC classification number: H01L27/14601 ,  H01L27/1463 ,  H01L27/14689

Abstract: A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

Abstract translation: 固态成像装置包括二维排列在设置在半导体基板上的阱区域中的多个像素，每个像素包括具有积累信号电荷的电荷累积区域的光电转换部分; 元件隔离层，其沿着各个电荷累积区域的周边设置在阱区域的表面上，并且将各个像素彼此电隔离; 以及扩散层，其设置在元件隔离层下方，并且将各个像素彼此电隔离，所述扩散层的宽度小于元件隔离层的宽度。 每个电荷累积区域设置成在元件隔离层的下方延伸并与扩散层接触或接近扩散层。

公开(公告)号：US07352013B2

公开(公告)日：2008-04-01

申请号：US11491901

申请日：2006-07-25

Applicant: Yasushi Maruyama ,  Hideshi Abe

Inventor： Yasushi Maruyama ,  Hideshi Abe

IPC: H01L29/74

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14806 ,  H01L31/02164 ,  H01L31/022408 ,  Y10S257/929

Abstract: There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) comprises a light-receiving sensor section disposed on the surface layer portion of a substrate (21) for performing a photoelectric conversion, a charge transfer section for transferring a signal charge read out from the light-receiving sensor section, a transfer electrode (27) (28) made of polysilicon formed on a substrate (21) at its position approximately above the charge transfer section through an insulating film (26), and an interconnection made of polysilicon and interconnected to the transfer electrode (27) (28). At least one of the polysilicon transfer electrode (27)(28) and the interconnection is formed on a polysilicon layer (27a) (28a) by selectively depositing a high-melting point metal having a resistance value lower than that of polysilicon. Also, there is provided a solid-state imaging device in which a fluctuation of a work function of the transfer electrode can be avoided and a manufacturing method thereof. The solid-state imaging device (10) comprises a buffer layer (1) containing a metal silicide layer (16) is formed between he transfer electrodes (3), (4) and a shunt interconnection layer (7) formed of a metal layer.

Abstract translation: 需要能够高速驱动并且可以防止引起灵敏度和照度缺陷的阴影的固态成像装置。 固态成像装置（20）包括设置在用于进行光电转换的基板（21）的表层部分上的光接收传感器部分，用于传送从光接收读出的信号电荷的电荷转移部分 传感器部分，通过绝缘膜（26）在其位于大致高于电荷转移部分的位置处形成在基板（21）上的由多晶硅制成的转移电极（27）（28），以及由多晶硅制成并且互连到转移 电极（27）（28）。 通过选择性地沉积具有比多晶硅低的电阻值的高熔点金属，在多晶硅层（27a）（28a）上形成多晶硅转移电极（27）（28）和互连中的至少一个。 另外，提供了可以避免转移电极的功函数波动的固态成像装置及其制造方法。 固态成像装置（10）包括在传输电极（3），（4）和由金属层形成的分流互连层（7）之间形成有包含金属硅化物层（16）的缓冲层（1） 。