公开(公告)号：US5720787A

公开(公告)日：1998-02-24

申请号：US629036

申请日：1996-04-08

申请人： Yoshiyuki Kasai ,  Yoshiro Ono ,  Toshio Yamada

发明人： Yoshiyuki Kasai ,  Yoshiro Ono ,  Toshio Yamada

IPC分类号： F01N3/02 ,  B01D46/00 ,  B01D46/24 ,  B01D46/42 ,  F01N3/022 ,  B01D41/04 ,  B01D41/00

CPC分类号： B01D46/2455 ,  B01D46/2459 ,  F01N3/0222 ,  B01D2046/2496 ,  B01D46/2451 ,  B01D46/2466 ,  Y02T10/20 ,  Y10S55/10 ,  Y10S55/30

摘要： An exhaust gas purifying filter for removing carbon particles from combustion exhaust gas, having a honeycomb structural body, flow passages that are sealed alternately at both ends by means of sealing portions to form checkerboard patterns. In the exhaust gas purifying filter according to the invention, lengths of the sealing portions formed in the flow passages of the honeycomb structural body vary randomly. An exhaust gas purifying apparatus utilizing the exhaust gas purifying filter according to the invention is also disclosed.

摘要翻译： 一种用于从具有蜂窝结构体的燃烧废气中除去碳颗粒的废气净化过滤器，通过密封部分在两端交替密封以形成棋盘图案的流动通道。 在根据本发明的废气净化过滤器中，形成在蜂窝结构体的流动通道中的密封部分的长度随机变化。 还公开了利用根据本发明的废气净化过滤器的废气净化装置。

公开(公告)号：US5680366A

公开(公告)日：1997-10-21

申请号：US573133

申请日：1995-12-15

申请人： Hisakazu Kotani ,  Hironori Akamatsu ,  Toshio Yamada ,  Akihiro Sawada ,  Hirohito Kikukawa ,  Masashi Agata ,  Shunichi Iwanari

发明人： Hisakazu Kotani ,  Hironori Akamatsu ,  Toshio Yamada ,  Akihiro Sawada ,  Hirohito Kikukawa ,  Masashi Agata ,  Shunichi Iwanari

IPC分类号： G11C5/02 ,  G11C7/10 ,  G11C11/4096 ,  H03K3/26

CPC分类号： G11C7/1057 ,  G11C11/4096 ,  G11C5/025 ,  G11C7/1048 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1069

摘要： In a driver circuit for driving a pair of data lines, the amplitude of a differential input signal is reduced from 2.5 V to 0.6 V, which is smaller than a conventional lower-limit source voltage (approximately 1.5 V). The amplitude of the differential signal transmitted through the pair of data lines is amplified to 2.5 V by an amplifying circuit and the resulting signal is then latched by a latch circuit. After the latching by the latch circuit, the operation of the amplifying circuit is halted. The driver circuit is constituted solely by a plurality of NMOS transistors so as not to increase a leakage current flowing in the off state. Here, the threshold voltage of the NMOS transistor positioned on the ground side is reduced to a conventional lower-limit value (0.3 V to 0.6 V), while the threshold voltage of the NMOS transistor on the power-source side to a value lower than the above lower-limit value (0 V to 0.3 V), thereby enhancing a driving force of the NMOS transistor on the power-source side.

摘要翻译： 在用于驱动一对数据线的驱动电路中，差分输入信号的幅度从2.5V减小到小于常规下限电源电压（约1.5V）的0.6V。 通过一对数据线传输的差分信号的幅度被放大电路放大到2.5V，然后由锁存电路锁存所得到的信号。 在锁存电路锁存之后，停止放大电路的工作。 驱动电路仅由多个NMOS晶体管构成，以便不增加在断开状态下流动的漏电流。 这里，位于地侧的NMOS晶体管的阈值电压降低到常规的下限值（0.3V〜0.6V），而电源侧的NMOS晶体管的阈值电压低于 上述下限值（0V至0.3V），从而增强了在电源侧的NMOS晶体管的驱动力。

公开(公告)号：USRE35430E

公开(公告)日：1997-01-21

申请号：US312589

申请日：1994-09-27

申请人： Toshio Yamada ,  Michihiro Inoue

发明人： Toshio Yamada ,  Michihiro Inoue

IPC分类号： G11C11/409 ,  G11C5/06 ,  G11C7/06 ,  G11C11/407 ,  G11C11/408 ,  G11C11/4091 ,  G11C7/00 ,  G11C13/00

CPC分类号： G11C11/4085 ,  G11C11/4091 ,  G11C5/063 ,  G11C7/065

摘要： In a semiconductor memory device comprising memory cells in which first and second potentials correspond to the logic values "0" and "1", the first potential is closer to the second potential than the potential of unselected word lines, by 0.3 V or more. The pull-up transistor is of the N-type, and the pull-down transistor is of the P-type.

摘要翻译： 在包括其中第一和第二电位对应于逻辑值“0”和“1”的存储器单元的半导体存储器件中，第一电位比非选定字线的电位更接近第二电位0.3V或更大。 上拉晶体管为N型，下拉晶体管为P型。

公开(公告)号：US5592925A

公开(公告)日：1997-01-14

申请号：US524253

申请日：1995-09-06

申请人： Minoru Machida ,  Toshio Yamada ,  Yukihito Ichikawa ,  Yoshiyuki Kasai

发明人： Minoru Machida ,  Toshio Yamada ,  Yukihito Ichikawa ,  Yoshiyuki Kasai

IPC分类号： F01N3/02 ,  F01N3/023 ,  F02M25/07

CPC分类号： F01N3/0233 ,  F01N3/023 ,  F02M26/35 ,  F02M26/36 ,  F02M26/38 ,  F02M26/39 ,  F02M26/50

摘要： An exhaust gas recirculation device for an internal combustion engine has a filter for trapping particulates in a recirculation gas, which is arranged in a recirculation gas route, and a device for generating a reverse air flow in which a pure gas flow for the reverse air flow passing through said filter in a reverse direction with respect to a recirculation gas flowing direction in the filter is generated. In the exhaust gas circulation device, the trapped gases are discharged out of the filter by the reverse air flow and are not returned into the internal combustion engine due to an engine exhaust pressure.

摘要翻译： 用于内燃机的废气再循环装置具有用于捕集再循环气体中的微粒的过滤器，该再循环气体布置在再循环气体路径中，以及用于产生反向空气流的装置，其中用于反向气流的纯气体流 产生相对于过滤器中的再循环气体流动方向的相反方向穿过所述过滤器。 在排气循环装置中，被捕获的气体通过反向气流从过滤器排出，并且由于发动机排气压力而不返回到内燃机中。

公开(公告)号：US5554953A

公开(公告)日：1996-09-10

申请号：US132322

申请日：1993-10-06

申请人： Akinori Shibayama ,  Toshio Yamada

发明人： Akinori Shibayama ,  Toshio Yamada

IPC分类号： G11C11/407 ,  G05F1/46 ,  G05F1/56 ,  G05F3/26 ,  G11C11/403 ,  H01L27/10 ,  G05F3/02

CPC分类号： G05F1/465

摘要： A reference voltage generator is composed of a first constant-voltage generator consisting of three p-type MOS transistors for generating a first reference voltage Vref for use in the normal operation, which is independent of an external power-supply voltage VCC and of a second constant-voltage generator consisting of two p-type MOS transistors and one n-type MOS transistor for generating a second reference voltage Vrefbi for use in a burn-in acceleration test, which is dependent on VCC. The output of each of the constant-voltage generators is feedbacked to the other constant-voltage generator as its input. Two differential amplifiers and two output drivers output, as an internal reduced voltage Vint, the higher one of Vref and Vrefbi which are outputted from the reference voltage generator. Since Vint is generated based on the two outputs Vref and Vrefbi which are outputted from the single reference voltage generator and which are related to each other, the power consumption and layout area of an internal reduced-voltage generator, which is suitable for the burn-in, can be reduced.

公开(公告)号：US5515334A

公开(公告)日：1996-05-07

申请号：US260922

申请日：1994-06-15

申请人： Hisakazu Kotani ,  Hironori Akamatsu ,  Ichiro Nakao ,  Toshio Yamada ,  Akihiro Sawada ,  Hirohito Kikukawa ,  Masashi Agata ,  Shunichi Iwanari

发明人： Hisakazu Kotani ,  Hironori Akamatsu ,  Ichiro Nakao ,  Toshio Yamada ,  Akihiro Sawada ,  Hirohito Kikukawa ,  Masashi Agata ,  Shunichi Iwanari

IPC分类号： G11C5/02 ,  G11C7/10 ,  G11C11/4096 ,  G11C7/00

CPC分类号： G11C7/1057 ,  G11C11/4096 ,  G11C5/025 ,  G11C7/1048 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1069

摘要： In a driver circuit for driving a pair of data lines, the amplitude of a differential input signal is reduced from 2.5 V to 0.6 V, which is smaller than a conventional lower-limit source voltage (approximately 1.5 V). The amplitude of the differential signal transmitted through the pair of data lines is amplified to 2.5 V by an amplifying circuit and the resulting signal is then latched by a latch circuit. After the latching by the latch circuit, the operation of the amplifying circuit is halted. The driver circuit is constituted solely by a plurality of NMOS transistors so as not to increase a leakage current flowing in the off state. Here, the threshold voltage of the NMOS transistor positioned on the ground side is reduced to a conventional lower-limit value (0.3 V to 0.6 V), while the threshold voltage of the NMOS transistor on the power-source side to a value lower than the above lower-limit value (0 V to 0.3 V), thereby enhancing a driving force of the NMOS transistor on the power-source side.

公开(公告)号：US5495741A

公开(公告)日：1996-03-05

申请号：US247918

申请日：1994-05-23

申请人： Toshio Yamada

发明人： Toshio Yamada

IPC分类号： B21D5/04 ,  B21D7/00 ,  B21D11/10 ,  B21D53/60 ,  B21D53/64 ,  B21D7/02

CPC分类号： B21D37/205 ,  B21D11/10 ,  B21D53/64 ,  B21D7/00

摘要： An apparatus for bending a band-shaped work, the apparatus including a stationary cylinder having at least a pair of slits on diametrically opposite sides thereof, the slits providing a passageway in which the work is inserted through the slits, a rotary sleeve accepting the stationary cylinder with a gap interposed therebetween, the rotary sleeve having a first opening and a second opening on diametrically opposite sides thereof, a first driving means for feeding the work passed through the passageway in the stationary cylinder and the first and second openings of the rotary sleeve, and a second driving means for rotating the rotary sleeve by a predetermined amount while the movement of the work is stopped so as to bend the work between the stationary cylinder and the rotary sleeve.

摘要翻译： 一种用于弯曲带状工件的装置，该装置包括具有在其直径相对侧上的至少一对狭缝的固定筒，狭缝提供通过狭缝插入工件的通道，接受静止的旋转套筒 气缸，其间具有间隙，旋转套筒具有第一开口和在其直径相对的侧面上的第二开口;第一驱动装置，用于将通过固定缸中的通道的工件供给到旋转套筒的第一和第二开口 以及第二驱动装置，用于在停止工件的移动以使工作在固定筒和旋转套筒之间弯曲的同时使旋转套筒旋转预定量。

公开(公告)号：US5494881A

公开(公告)日：1996-02-27

申请号：US216429

申请日：1994-03-23

申请人： Minoru Machida ,  Toshio Yamada ,  Yukihito Ichikawa

发明人： Minoru Machida ,  Toshio Yamada ,  Yukihito Ichikawa

IPC分类号： B01J35/04 ,  F01N3/28 ,  B01J35/00

CPC分类号： F01N3/2828 ,  B01J35/04

摘要： A ceramic honeycomb catalyst includes a thin-walled honeycomb structural body (10) and a catalytic substance carried by the honeycomb structural body (10). The honeycomb structural body (10) has a number of longitudinally extending flow passages (13) defined by an outer peripheral wall (11) and partition walls (12) with a reduced thickness (t). The honeycomb structural body (10) satisfies particular relationships between the partition wall thickness (t) and the open frontal area (OFA) or bulk density (G). Notwithstanding the thin-walled partition walls, the honeycomb structural body (10) has practically satisfactory compressive strength characteristics. The catalyst comprising the honeycomb structural body (10) has reduced pressure loss and heat capacity.

摘要翻译： 陶瓷蜂窝体催化剂包括薄壁蜂窝结构体（10）和由蜂窝结构体（10）承载的催化物质。 蜂窝结构体（10）具有由外周壁（11）和厚度（t）减小的隔壁（12）限定的多个纵向延伸的流动通道（13）。 蜂窝结构体（10）满足分隔壁厚度（t）和开口正面面积（OFA）或体积密度（G）之间的特定关系。 尽管具有薄壁的隔壁，蜂窝结构体（10）具有实际上令人满意的抗压强度特性。 包含蜂窝结构体（10）的催化剂具有减小的压力损失和热容量。

公开(公告)号：US5342480A

公开(公告)日：1994-08-30

申请号：US069844

申请日：1993-06-01

申请人： Hirotaka Nishizawa ,  Seiichiro Azuma ,  Takayuki Yoshitake ,  Kazuo Tanaka ,  Mikinori Kawaji ,  Sinmei Hirano ,  Toshio Yamada ,  Yasusi Sekine

发明人： Hirotaka Nishizawa ,  Seiichiro Azuma ,  Takayuki Yoshitake ,  Kazuo Tanaka ,  Mikinori Kawaji ,  Sinmei Hirano ,  Toshio Yamada ,  Yasusi Sekine

IPC分类号： H01L21/265 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8248 ,  H01L27/108 ,  H01L27/12 ,  H01L29/73 ,  H01L29/732 ,  H01L29/78 ,  H01L29/786 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/76229 ,  H01L21/8248 ,  H01L27/10829

摘要： An isolation and flattening technique for a semiconductor substrate having active devices, such as a bipolar transistor, and a MISFET, formed thereon, is disclosed. The technique includes forming grooves, to the main surface of a non-active region of a semiconductor substrate or a semiconductor layer, each groove extending into the substrate or layer and forming island regions of the substrate or layer, forming a burying material and a first mask having an etching rate greater than that of the burying material successively over the entire surface of the semiconductor substrate or the semiconductor layer including areas on the upper surface of the island regions and in the grooves, such that the film thickness is made virtually uniform for each of the surfaces, forming a second mask on the surface of the first mask, through which the region on each of the island regions is exposed and in which the end of the opening is situated from the end of the island region to the outside of the island region within a distance 0.7 times of the film thickness for the sum of the burying material and the first mask, and applying isotropic etching successively to each of the first mask and the burying material by using the second mask as an etching mask, under a condition in which the etching rate for the first mask is greater than that for the burying material.

摘要翻译： 公开了一种在其上形成有半导体衬底的隔离和平坦化技术，其具有诸如双极晶体管和MISFET之类的有源器件。 该技术包括在半导体衬底或半导体层的非有源区的主表面上形成凹槽，每个凹槽延伸到衬底或层中并形成衬底或层的岛区，形成掩埋材料和第一 在半导体衬底或半导体层的整个表面上连续地具有大于掩埋材料的蚀刻速率的掩模，该蚀刻速率包括在岛状区域和沟槽的上表面上的区域，使得膜厚实质上是均匀的 每个所述表面在所述第一掩模的表面上形成第二掩模，所述岛状区域中的所述区域通过所述第二掩模暴露，并且所述开口的所述端部从所述岛状区域的所述端部位于所述岛状区域的外部 在距离掩模材料和第一掩模的总和的膜厚的0.7倍的范围内的岛区域，并且将各向同性蚀刻连续地施加到e 在第一掩模的蚀刻速率大于掩埋材料的蚀刻速率的条件下，通过使用第二掩模作为蚀刻掩模，在第一掩模和掩埋材料的掩模之间。

公开(公告)号：US5341035A

公开(公告)日：1994-08-23

申请号：US709961

申请日：1991-06-04

申请人： Akinori Shibayama ,  Toshio Yamada

发明人： Akinori Shibayama ,  Toshio Yamada

IPC分类号： G05F3/20 ,  H03L1/00 ,  H03L5/00

CPC分类号： G05F3/205

摘要： In a substrate potential generator, a substrate potential is supplied by a substrate potential supplier controlled by a substrate potential detector. The substrate potential detector sends a setting signal having a hysteresis characteristic relative to the substrate potential. That is, the setting signal is higher when the substrate potential supplier is stopped than when the substrate potential supplier is activated or when negative charges are injected into the substrate potential. Thus, the operation of the substrate potential supplier is stopped after the substrate potential becomes lower than the lower setting potential when the substrate potential supplier is activated, while the operation of the substrate potential supplier is started after the substrate potential becomes higher than the upper setting potential after the operation of the substrate potential supplier is stopped. Therefore, the starting and stopping of the substrate potential supplier is not repeated so frequently, so that the dissipating charge and discharge currents accompanied with the starting and stopping will not be enhanced wastefully.

摘要翻译： 在衬底电位发生器中，由衬底电位检测器控制的衬底电位供给器提供衬底电位。 衬底电位检测器发送具有相对于衬底电位的滞后特性的设置信号。 也就是说，当衬底电位供给器停止时，设置信号比衬底电位供应器被激活时或当负电荷注入衬底电位时更高。 因此，在基板电位供给器被激活之后，在基板电位变得低于基板电位供给器的下限设定电位之后，基板电位供给器的动作停止，同时基板电位供给器的动作在基板电位变得高于上限值之后开始 在停止基板电位供给器的操作之后的潜力。 因此，不会如此频繁地重复基板电位供给器的启动和停止，从而不会浪费地增加伴随启动和停止的耗散充放电电流。