公开(公告)号：US07009868B2

公开(公告)日：2006-03-07

申请号：US10995116

申请日：2004-11-24

申请人： In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

发明人： In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

IPC分类号： G11C11/00

CPC分类号： H01L27/11206 ,  G11C16/0475 ,  H01L27/112

摘要： A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate to cover the transistor in which a contact hole exposing a source region of the transistor is formed, a resistant material in which a bit data “0” or “1” is written connected to the source region of the transistor by a conductive plug or an insulating film, and a conductive plate contacting the resistant material. The memory device exhibits improved degree of integration, reduced current consumption by lengthening a refresh period thereof, and enjoys simplified manufacturing process due to a simple memory cell structure.

摘要翻译： 具有一个晶体管和一个电阻元件作为存储装置的存储器件和用于驱动存储器件的方法包括形成在半导体衬底上的NPN型晶体管，形成在半导体衬底上以覆盖晶体管的层间绝缘膜， 形成暴露晶体管的源极区域的接触孔，通过导电插塞或绝缘膜将位数据“0”或“1”写入的电阻材料连接到晶体管的源极区域，并且导电 板接触抵抗材料。 存储器件通过延长其刷新周期而呈现出提高的集成度，降低的电流消耗，并且由于简单的存储单元结构而享有简化的制造工艺。

公开(公告)号：US06891241B2

公开(公告)日：2005-05-10

申请号：US10950582

申请日：2004-09-28

申请人： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

发明人： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/22 ,  H01L29/788 ,  H01L29/792 ,  H01L43/08 ,  H01L29/82 ,  H01L43/00

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.

公开(公告)号：US20050077833A1

公开(公告)日：2005-04-14

申请号：US10962467

申请日：2004-10-13

申请人： In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

发明人： In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

IPC分类号： G03F7/20 ,  H01J1/312 ,  H01J9/02 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027 ,  H01J7/24 ,  H05B31/26

CPC分类号： H01J37/073 ,  H01J2237/31779

摘要： An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

摘要翻译： 用于电子束投影光刻系统的发射器包括：感光体基板，形成于感光体基板前表面的绝缘层，形成在绝缘层上的栅极电极层，以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中，在基极和栅极电极层之间施加电压，光被投射到光电导体基底的一部分上，以将感光体基底的一部分转换为导体，使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子，所以可以实现对象电子抗蚀剂的部分校正，图案化或修复。

公开(公告)号：US06794666B2

公开(公告)日：2004-09-21

申请号：US10160102

申请日：2002-06-04

申请人： Won-bong Choi ,  In-kyeong Yoo

发明人： Won-bong Choi ,  In-kyeong Yoo

IPC分类号： G21G500

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  H01J3/022 ,  H01J2237/06341 ,  H01J2237/3175 ,  Y10S977/901

摘要： An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emission source by a predetermined distance and on which a sample is mounted, and wherein the electron emission source is a carbon nanotube having electron emission power. Since a carbon nanotube is used as an electron emission source, a lithography process can be performed with a precise critical dimension that prevents a deviation from occurring between the center of a substrate and the edge thereof and may realize a high throughput.

摘要翻译： 一种使用选择性生长的碳纳米管作为电子发射源的电子发射光刻设备和方法，其中电子发射光刻设备包括安装在室内的电子发射源和与电子发射源分离预定距离的电台 并且其上安装有样品，并且其中所述电子发射源是具有电子发射能力的碳纳米管。 由于使用碳纳米管作为电子发射源，可以以精确的临界尺寸进行光刻处理，从而防止在基板的中心与其边缘之间发生偏差，并且可以实现高生产率。

公开(公告)号：US5699290A

公开(公告)日：1997-12-16

申请号：US659885

申请日：1996-06-07

申请人： In-kyeong Yoo

发明人： In-kyeong Yoo

IPC分类号： G11C11/22 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  G11C11/50

CPC分类号： G11C11/22

摘要： A ferroelectric read and write memory of a nondestructive write and read (NDWR) method in which charges of a gate insulating layer induced by a ferroelectric capacitor are discharged via a separate path, includes a source and a drain provided in both side of a well; a gate insulating layer provided on the well; a gate electrode provided on the gate insulating layer; a ferroelectric layer provided on the gate electrode, to which corresponding charges are induced in the gate electrode depending on its polar states; an upper electrode provided on the ferroelectric layer; and a charge discharging means electrically connected to the gate electrode for discharging charges induced in the gate insulating layer. In a driving method thereof, charges of the gate insulating layer induced by the ferroelectric layer are directly discharged via the gate electrode to make a logic "low" state by blocking the current flow between the source and insulating layer through the well during a binary logic information write operation. Therefore, if the information is written in a non-inversion state of the polarization, a fatigue of the ferroelectric layer can be prevented. Also, as described above, since the remained polarization still exists during the repeated information write operations, the information can be written at a low voltage.

摘要翻译： 一种非铁磁读写（NPWR）方法的铁电读和写存储器，其中由铁电电容器引起的栅极绝缘层的电荷通过单独的路径排出，包括设置在阱两侧的源极和漏极; 设在井上的栅绝缘层; 设置在所述栅极绝缘层上的栅电极; 设置在栅电极上的铁电层，根据极极状态在栅电极中引起相应的电荷; 设置在所述强电介质层上的上电极; 以及电连接到栅电极用于对栅极绝缘层中感应的电荷进行放电的电荷放电装置。 在其驱动方法中，由铁电体层引起的栅极绝缘层的电荷通过栅电极直接放电，以在二进制逻辑期间通过阱阻塞源极和绝缘层之间的电流流动而形成逻辑“低”状态 信息写入操作。 因此，如果信息被写入极化的非反转状态，则可以防止铁电层的疲劳。 此外，如上所述，由于在重复信息写入操作期间仍然存在剩余的极化，所以可以以低电压写入信息。

公开(公告)号：US07936044B2

公开(公告)日：2011-05-03

申请号：US11403902

申请日：2006-04-14

申请人： Dong Chul Kim ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Sun-ae Seo ,  In-gyu Baek ,  Seung-eon Ahn ,  Byoung-ho Park ,  Young-kwan Cha ,  Sang-jin Park

发明人： Dong Chul Kim ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Sun-ae Seo ,  In-gyu Baek ,  Seung-eon Ahn ,  Byoung-ho Park ,  Young-kwan Cha ,  Sang-jin Park

IPC分类号： H01L29/00

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

摘要： A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.

摘要翻译： 存储器件可以包括与开关器件耦合的开关器件和存储节点。 存储节点可以包括第一电极，第二电极，数据存储层和至少一个接触层。 数据存储层可以设置在第一电极和第二电极之间，并且可以包括过渡金属氧化物或氧化铝。 至少一个接触层可以设置在数据存储层的上方或下方的至少一个上，并且可以包括导电金属氧化物。

公开(公告)号：US20110059576A1

公开(公告)日：2011-03-10

申请号：US12926042

申请日：2010-10-22

申请人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

发明人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

IPC分类号： H01L21/02

CPC分类号： H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

摘要翻译： 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。

公开(公告)号：US07859035B2

公开(公告)日：2010-12-28

申请号：US11606889

申请日：2006-12-01

申请人： Chang-wook Moon ,  Sang-mock Lee ,  In-kyeong Yoo ,  Seung-woon Lee ,  El Mostafa Bourim ,  Eun-hong Lee ,  Choong-rae Cho

发明人： Chang-wook Moon ,  Sang-mock Lee ,  In-kyeong Yoo ,  Seung-woon Lee ,  El Mostafa Bourim ,  Eun-hong Lee ,  Choong-rae Cho

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L27/115 ,  B82Y10/00 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/35 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146

摘要： A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.

摘要翻译： 提供一种具有金属 - 绝缘体 - 金属结构的存储节点，包括具有金属 - 绝缘体 - 金属（MIM）结构的存储节点的非易失性存储器件及其操作方法。 存储器件可以包括连接到开关元件的开关元件和存储节点。 存储节点可以包括依次层叠的第一金属层，第一绝缘层和第二金属层，以及纳米结构层。 存储节点还可以包括第二绝缘层和第三金属层。 用作碳纳米结构层的纳米结构层可以包括至少一个富勒烯层。

公开(公告)号：US07417271B2

公开(公告)日：2008-08-26

申请号：US11655193

申请日：2007-01-19

申请人： Stefanovich Genrikh ,  Choong-rae Cho ,  In-kyeong Yoo ,  Eun-hong Lee ,  Sung-Il Cho ,  Chang-wook Moon

发明人： Stefanovich Genrikh ,  Choong-rae Cho ,  In-kyeong Yoo ,  Eun-hong Lee ,  Sung-Il Cho ,  Chang-wook Moon

IPC分类号： H01L31/062

CPC分类号： H01L27/115 ,  G11C2213/56 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

摘要： An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide layer formed on the lower electrode, a second oxide layer formed on the first oxide layer and an upper electrode formed on the second oxide layer wherein at least one of the first and second oxide layers may be formed of a resistance-varying material. The first oxide layer may be formed of an oxide having a variable oxidation state.

摘要翻译： 提供具有至少两个氧化物层的电极结构，其更可靠地在不使用附加装置的情况下切换和操作，以及具有该氧化物层的非易失性存储装置。 电极结构可以包括下电极，形成在下电极上的第一氧化物层，形成在第一氧化物层上的第二氧化物层和形成在第二氧化物层上的上电极，其中第一氧化物层和第二氧化物层中的至少一个 可以由电阻变化材料形成。 第一氧化物层可以由具有可变氧化态的氧化物形成。

公开(公告)号：US20070278425A1

公开(公告)日：2007-12-06

申请号：US11882927

申请日：2007-08-07

申请人： In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

发明人： In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

IPC分类号： G21K5/04

CPC分类号： H01J37/073 ,  H01J2237/31779

摘要： An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

摘要翻译： 用于电子束投影光刻系统的发射器包括：感光体基板，形成于感光体基板前表面的绝缘层，形成在绝缘层上的栅极电极层，以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中，在基极和栅极电极层之间施加电压，光被投射到光电导体基底的一部分上，以将感光体基底的一部分转换为导体，使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子，所以可以实现对象电子抗蚀剂的部分校正，图案化或修复。