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公开(公告)号：US09570659B2
公开(公告)日：2017-02-14
申请号：US14052962
申请日：2013-10-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Alfons Dehe , Stefan Kolb , Horst Theuss , Dirk Meinhold
Abstract: A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter structure is configured to emit infrared light with an emitter frequency distribution. Further, the lateral filter structure is configured to filter the infrared light emitted by the lateral emitter structure so that frequency-adjusted infrared light is provided with an adjusted frequency distribution. The frequency range of the adjusted frequency distribution is narrower than a frequency range of the emitter frequency distribution. Further, a lateral air gap is located between the lateral emitter structure and the lateral filter structure.
Abstract translation: 用于发射频率调节的红外光的半导体器件包括侧向发射极结构和侧向滤波器结构。 横向发射极结构被配置为发射具有发射极频率分布的红外光。 此外，横向滤波器结构被配置为对由横向发射器结构发射的红外光进行滤波，使得频率调节的红外光具有调整的频率分布。 调整频率分布的频率范围比发射体频率分布的频率范围窄。 此外，横向气隙位于横向发射器结构和侧向过滤器结构之间。
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公开(公告)号：US09520551B2
公开(公告)日：2016-12-13
申请号：US14933351
申请日：2015-11-05
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Markus Eckinger
CPC classification number: H01L43/065 , G01R33/0035 , G01R33/0052 , G01R33/07 , G01R33/075 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
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公开(公告)号：US09513261B2
公开(公告)日：2016-12-06
申请号：US14052959
申请日：2013-10-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Alfons Dehe , Stefan Kolb , Horst Theuss
CPC classification number: G01N29/2425 , G01N21/1702 , G01N29/2418 , G01N29/30 , G01N2021/1704 , G01N2291/021
Abstract: A photoacoustic gas sensor device for analyzing gas includes an emitter module and a pressure-sensitive module. The emitter module is arranged on a carrier substrate and emits light pulses. The pressure-sensitive module is arranged on the carrier substrate within a reference gas volume. The reference gas volume is separated from a volume intended to be filled with a gas to be analyzed. Further, the pressure-sensitive module generates a sensor signal indicating information on an acoustic wave caused by light pulses emitted by the emitter module interacting with a reference gas within the reference gas volume. Additionally, the emitter module is arranged so that light pulses emitted by the emitter module reach the reference gas volume after crossing the volume intended to be filled with the gas to be analyzed.
Abstract translation: 用于分析气体的光声气体传感器装置包括发射器模块和压敏模块。 发射器模块布置在载体衬底上并发射光脉冲。 压敏模块布置在载体基板上的参考气体体积内。 将参考气体体积与要被分析的气体填充的体积分离。 此外，压敏模块产生传感器信号，该传感器信号指示由与参考气体体积内的参考气体相互作用的发射器模块发射的光脉冲引起的声波信息。 此外，发射器模块被布置成使得发射器模块发射的光脉冲在穿过要被分析的气体填充的体积之后达到参考气体体积。
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公开(公告)号：US20160351800A1
公开(公告)日：2016-12-01
申请号：US15215631
申请日：2016-07-21
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
Abstract translation: 在制造磁阻传感器模块的方法中，首先提供从半导体衬底和金属 - 绝缘体布置中的复合布置，其中半导体电路布置与半导体衬底的主表面相邻地集成在其中，其中 金属绝缘体布置在半导体衬底的主表面上并且包括结构化金属片和至少部分地围绕结构化金属片的绝缘材料，其中结构化金属片电连接到半导体电路装置。 然后，将磁阻传感器结构施加到复合布置的绝缘材料的表面上，最后建立磁阻传感器结构和结构金属片之间的电连接，使得磁阻传感器结构连接到集成电路 安排。
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公开(公告)号：US09162868B2
公开(公告)日：2015-10-20
申请号：US14091492
申请日：2013-11-27
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Andreas Meiser , Till Schloesser , Wolfgang Werner
CPC classification number: B81B3/0021 , B81B3/0086 , B81B2201/0207 , B81B2201/0235 , B81B2201/0264 , B81B2201/0292 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81C1/0015 , G01H1/00 , G01H11/06 , G01L9/0072 , G01L9/12 , G01N27/223 , G01P15/125
Abstract: A MEMS device includes a fixed electrode and a movable electrode arranged isolated and spaced from the fixed electrode by a distance. The movable electrode is suspended against the fixed electrode by one or more spacers including an insulating material, wherein the movable electrode is laterally affixed to the one or more spacers.
Abstract translation: MEMS器件包括固定电极和可移动电极，与固定电极隔离并间隔一定距离。 可移动电极通过一个或多个包括绝缘材料的间隔件悬置在固定电极上，其中可动电极横向地固定到一个或多个间隔件上。
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Patent Agency Ranking
公开(公告)号：US11630087B2
公开(公告)日：2023-04-18
申请号：US17591714
申请日：2022-02-03
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Alfons Dehe , Jochen Huber , Franz Jost , Horst Theuss , Juergen Woellenstein
Abstract: An apparatus for in-situ calibration of a photoacoustic sensor includes a measurement device configured to measure an electric signal at an IR emitter of the photoacoustic sensor, wherein the IR emitter generates an electromagnetic spectrum based on the electric signal; and a calibration unit including processing circuitry, configured to compare the electric signal with a comparison value to generate a comparison result used as calibration information. When performing the in-situ calibration, the calibration unit is configured to adjust the electric signal based on the calibration information, or the calibration unit is configured to process an output signal of the photoacoustic sensor based on the calibration information to obtain an adjusted output signal of the photoacoustic sensor.
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公开(公告)号：US10753858B2
公开(公告)日：2020-08-25
申请号：US16456361
申请日：2019-06-28
Applicant: Infineon Technologies AG , Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
Inventor： Stefan Kolb , Alfons Dehe , Jochen Huber , Franz Jost , Horst Theuss , Wilhelm Wiedmeier , Juergen Woellenstein
Abstract: Shown is a wafer arrangement for a gas sensor including a first substrate and a sescond substrate. The first substrate includes a MEMS membrane associated with a sensor element and an emitter element configured to emit electromagnetic radiation. The second substrate is arranged on top of the first substrate and defines at least a portion of a chamber disposed adjacent to the MEMS membrane.
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公开(公告)号：US09935259B2
公开(公告)日：2018-04-03
申请号：US15793399
申请日：2017-10-25
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Markus Eckinger
CPC classification number: H01L43/065 , G01R33/0035 , G01R33/0052 , G01R33/07 , G01R33/075 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
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公开(公告)号：US20180047893A1
公开(公告)日：2018-02-15
申请号：US15793399
申请日：2017-10-25
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Markus Eckinger
CPC classification number: H01L43/065 , G01R33/0035 , G01R33/0052 , G01R33/07 , G01R33/075 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
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公开(公告)号：US09741925B2
公开(公告)日：2017-08-22
申请号：US15069370
申请日：2016-03-14
Applicant: Infineon Technologies AG
Inventor： Markus Eckinger , Stefan Kolb
CPC classification number: H01L43/04 , G01R33/0052 , G01R33/07 , H01L43/065 , H01L43/14
Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.
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