Self-configuring error control coding

    公开(公告)号:US10547327B2

    公开(公告)日:2020-01-28

    申请号:US15631476

    申请日:2017-06-23

    Abstract: Self-configuring error control coding in a memory device provides flexibility in terms of decoding latency, mis-correct probability, and bit-error rate performance, and avoids labor-intensive trial-and-error configuration of decoding algorithm tuning parameters, such as bit flip algorithm thresholds and syndrome-weight maps. A self-configuring decoder for error control coding allows dynamic trading of error floor performance for error rate performance and vice versa based on the performance characteristics of the decoding process.

    PERMUTATION OF BIT LOCATIONS TO REDUCE RECURRENCE OF BIT ERROR PATTERNS IN A MEMORY DEVICE

    公开(公告)号:US20200012554A1

    公开(公告)日:2020-01-09

    申请号:US16578039

    申请日:2019-09-20

    Abstract: Embodiments described include methods, apparatuses, and systems including a permutation generator to permute locations of one or more bits (e.g., data bits and/or parity bits) in a codeword. In embodiments, the bits are to be written to a memory device based on the permuted locations to reduce a recurrence of bit error patterns associated with the bits when stored in the memory device. In some embodiments, the locations are based at least in part on a pseudorandom number, generated based at least in part on information available at a read time and a write time. In some embodiments, the pseudorandom number is based upon a memory address of the memory device, such as a 3D NAND or other memory device. Additional embodiments may be described and claimed.

    Apparatus, non-volatile memory storage device and method for detecting drift in non-volatile memory

    公开(公告)号:US10481974B2

    公开(公告)日:2019-11-19

    申请号:US15636635

    申请日:2017-06-28

    Abstract: Provided are an apparatus, non-volatile memory storage device and method for detecting drift in in non-volatile memory. A determination is made as to whether bits to write have more of a first value than a second value. Each of the bits are flipped to another of the first or second value when the bits have more of the first value than the second value. Indication is made whether the bits were flipped or not flipped. Parity is calculated for the bits and the bits and the parity for the bits are written to a location in the non-volatile memory. The bits at the location in the non-volatile memory are read and each of the bits having the first value are flipped to the second value and each of the bits having the second value are flipped to the first value in response to indication that the bits were flipped.

    Error correction in memory
    39.
    发明授权

    公开(公告)号:US10073731B2

    公开(公告)日:2018-09-11

    申请号:US14091757

    申请日:2013-11-27

    Abstract: Apparatus, systems, and methods for error correction in memory are described. In one embodiment, a controller comprises logic to receive a read request from a host device for data stored in a memory, retrieve the data and an associated error correction codeword, send the data to a host device, apply an error correction routine to decode the error correction codeword retrieved with the data, and in response to an error in the error correction codeword, send a location of data associated with the error to the host device. Other embodiments are also disclosed and claimed.

Patent Agency Ranking