DIELECTRIC BREAKDOWN MONITOR
    32.
    发明申请

    公开(公告)号:US20180246159A1

    公开(公告)日:2018-08-30

    申请号:US15443688

    申请日:2017-02-27

    CPC classification number: G01R31/129 G01R31/14 G01R31/3008 H03K3/0315

    Abstract: A method and system of monitoring a reliability of a semiconductor circuit are provided. A current consumption of a first ring oscillator that is in static state is measured at predetermined intervals. Each measured current consumption value is stored. A baseline current consumption value of the first ring oscillator is determined based on the stored current consumption values. A latest measured current consumption value of the first ring oscillator is compared to the baseline current consumption value. Upon determining that the latest measured current consumption value is above a threshold deviation from the baseline current consumption value, the first ring oscillator is identified to have a dielectric breakdown degradation.

    ELECTROMIGRATION WEAROUT DETECTION CIRCUITS
    38.
    发明申请

    公开(公告)号:US20170269152A1

    公开(公告)日:2017-09-21

    申请号:US15070577

    申请日:2016-03-15

    CPC classification number: G01R31/2858 H02H1/0007

    Abstract: Embodiments include methods, and systems of an integrated circuit having electromigration wearout detection circuits. Integrated circuit may include a detection element and a reference element. Detection element is subject to normal operation current. Reference element is not subject to normal operation current. A resistance of detection element is monitored to detect electromigration wearout. The electromigration wearout detection monitoring circuit may be configured to perform: periodically measuring resistance of detection element, calculating resistance change of detection element over a predetermined time period, comparing resistance change of detection element calculated to a predetermined safety threshold, and take mitigation actions when resistance change of detection element exceeds predetermined safety threshold. The mitigation actions may include switching to a redundant circuit of the integrated circuit, shutting down the integrated circuit, and sending a signal to initiate a service call. The predetermined safety threshold may be 1% of resistance change of the detection element.

    MEASUREMENT FOR TRANSISTOR OUTPUT CHARACTERISTICS WITH AND WITHOUT SELF HEATING

    公开(公告)号:US20160266195A1

    公开(公告)日:2016-09-15

    申请号:US14657437

    申请日:2015-03-13

    CPC classification number: G01R31/2628 G01R31/025 G01R31/2601 G01R31/2648

    Abstract: A method of measuring semiconductor output characteristics is provided that includes connecting a pulse generator to the gate structure of a semiconductor device, and applying a plurality of voltage pulses at least some of which having a different pulse width to the gate structure of the semiconductor device. The average current is measured from the drain structure of the device for a duration of each pulse of the plurality of pulses. From the measured values for the average current, a self-heating curve of the average current divided by the pulse width is plotted as a function of the pulse width. The self-heating curve is then extrapolated to a pulse width substantially equal to zero to provide a value of drain current measurements without self-heating effects.

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