Ring oscillator structures to determine local voltage value

    公开(公告)号:US10574240B2

    公开(公告)日:2020-02-25

    申请号:US15445587

    申请日:2017-02-28

    Abstract: An electronic apparatus for testing an integrated circuit (IC) that includes a ring oscillator is provided. The apparatus configures the ring oscillator to produce oscillation at a first frequency and configures the ring oscillator to produce oscillation at a second frequency. The apparatus then compares the second frequency with an integer multiple of the first frequency to determine a resistive voltage drop between a voltage applied to the IC and a local voltage at the ring oscillator. The ring oscillator has a chain of inverting elements forming a long ring and a short ring. The ring oscillator also has an oscillation selection circuit that is configured to disable the short ring so that the ring oscillator produces a fundamental oscillation based on signal propagation through the long ring and enable the short ring so that the ring oscillator produces a harmonic oscillation based on a signal propagation through the short ring and the long ring.

    Analytics to determine customer satisfaction

    公开(公告)号:US10360526B2

    公开(公告)日:2019-07-23

    申请号:US15221185

    申请日:2016-07-27

    Abstract: A computer-implemented method for analyzing customer satisfaction is presented. The computer-implemented method may include capturing visual images related to individuals and order consumables, determining, by a processor, at least one measurable metric to predict variations indicating different satisfaction levels, and dynamically refining parameters if the variations exceed one or more thresholds. The computer-implemented method further includes receiving the captured visual images of the individuals and the order consumables by least one camera in communication with the processor.

    Measurement for transistor output characteristics with and without self heating

    公开(公告)号:US09952274B2

    公开(公告)日:2018-04-24

    申请号:US14657437

    申请日:2015-03-13

    CPC classification number: G01R31/2628 G01R31/025 G01R31/2601 G01R31/2648

    Abstract: A method of measuring semiconductor output characteristics is provided that includes connecting a pulse generator to the gate structure of a semiconductor device, and applying a plurality of voltage pulses at least some of which having a different pulse width to the gate structure of the semiconductor device. The average current is measured from the drain structure of the device for a duration of each pulse of the plurality of pulses. From the measured values for the average current, a self-heating curve of the average current divided by the pulse width is plotted as a function of the pulse width. The self-heating curve is then extrapolated to a pulse width substantially equal to zero to provide a value of drain current measurements without self-heating effects.

    DYNAMIC PREDICTOR OF SEMICONDUCTOR LIFETIME LIMITS

    公开(公告)号:US20180038906A1

    公开(公告)日:2018-02-08

    申请号:US15230067

    申请日:2016-08-05

    Abstract: A method and circuit of monitoring an effective age of a target circuit are provided. A standby mode is activated in the target circuit. A standby current of a first number of circuit blocks of the target circuit is measured. The measured standby current of the first number of circuit blocks is compared to a first baseline standby current of the first number of circuit blocks. Upon determining that the measured standby current of the first number of circuit blocks is below a first predetermined factor of a baseline standby current of the first number of circuit blocks, the first number of circuit blocks is identified to have a bias temperature instability (BTI) degradation concern.

    On-chip leakage measurement
    6.
    发明授权

    公开(公告)号:US09863994B2

    公开(公告)日:2018-01-09

    申请号:US15060497

    申请日:2016-03-03

    CPC classification number: G01R31/025 G01R19/165 G01R31/2884 G01R31/3008

    Abstract: Method of measuring semiconductor device leakage which includes: providing a semiconductor device powered by a supply voltage and having a circuit block of transistors; providing on the semiconductor device a test circuit providing an input to a counter and a fixed-frequency measurement clock to provide a clock signal to the counter; disconnecting a system clock from the circuit block; receiving by the test circuit the supply voltage as an input; initializing the counter; starting the counter when the supply voltage is at or below a first voltage Vhigh; monitoring a decrease of the supply voltage with time; stopping the counter when the supply voltage is at or below a second voltage Vlow such that Vhigh is greater than Vlow; and reading the counter to provide the semiconductor device leakage metric. Also disclosed is an apparatus and a computer program product.

    DUTY CYCLE MEASUREMENT
    7.
    发明申请

    公开(公告)号:US20170350928A1

    公开(公告)日:2017-12-07

    申请号:US15684181

    申请日:2017-08-23

    Inventor: Keith A. Jenkins

    Abstract: Methods and systems for measuring a duty cycle of a signal include applying a first branch of an input signal directly to a latch. A delay of a second branch of the input signal is incrementally increased, with the second branch being applied to the latch, until the latch changes its output. A delay, corresponding to the latch's changed output, is divided by a period of the input signal to determine a duty cycle of the input signal.

    Measurement for transistor output characteristics with and without self heating

    公开(公告)号:US09678141B2

    公开(公告)日:2017-06-13

    申请号:US14747546

    申请日:2015-06-23

    CPC classification number: G01R31/2628 G01R31/025 G01R31/2601 G01R31/2648

    Abstract: A method of measuring semiconductor output characteristics is provided that includes connecting a pulse generator to the gate structure of a semiconductor device, and applying a plurality of voltage pulses at least some of which having a different pulse width to the gate structure of the semiconductor device. The average current is measured from the drain structure of the device for a duration of each pulse of the plurality of pulses. From the measured values for the average current, a self-heating curve of the average current divided by the pulse width is plotted as a function of the pulse width. The self-heating curve is then extrapolated to a pulse width substantially equal to zero to provide a value of drain current measurements without self-heating effects.

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