公开(公告)号：US06501154B2

公开(公告)日：2002-12-31

申请号：US09088743

申请日：1998-06-02

申请人： Etsuo Morita ,  Masao Ikeda ,  Hiroji Kawai

发明人： Etsuo Morita ,  Masao Ikeda ,  Hiroji Kawai

IPC分类号： H01L2904

CPC分类号： H01S5/3202 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/32341 ,  H01S2304/04

摘要： There are provided a semiconductor substrate and a semiconductor laser using the semiconductor substrate which promises smooth and optically excellent cleaved surfaces and is suitable for fabricating semiconductor lasers using nitride III-V compound semiconductors. Using a semiconductor substrate, such as GaN substrate, having a major surface substantially normal to a {0001}-oriented face, e.g. {01-10}-oriented face or {11-20}-oriented face, or offset within ±5° from these faces, nitride III-V compound semiconductor layers are epitaxially grown on the substrate to form a laser structure. To make cavity edges, the GaN substrate is cleaved together with the overlying III-V compound semiconductor layers along high-cleavable {0001}-oriented faces.

摘要翻译： 提供了使用半导体衬底的半导体衬底和半导体激光器，该半导体衬底具有光滑和光学优异的切割表面，并且适用于使用氮化物III-V化合物半导体制造半导体激光器。 使用诸如GaN衬底的半导体衬底，其具有基本上垂直于{0001}取向面的主表面，例如， {01-10}取向的面或{11-20}取向的面，或偏离这些面的±5°以内，氮化物III-V化合物半导体层在衬底上外延生长以形成激光结构。 为了形成腔边缘，GaN衬底与沿着高可裂解{0001}取向面的上覆III-V化合物半导体层一起被切割。

公开(公告)号：US06468902B2

公开(公告)日：2002-10-22

申请号：US09768480

申请日：2001-01-24

申请人： Hiroji Kawai

发明人： Hiroji Kawai

IPC分类号： H01L21302

CPC分类号： H01L29/66522 ,  B82Y20/00 ,  H01L21/0332 ,  H01L21/304 ,  H01L21/30612 ,  H01L21/76898 ,  H01L29/812 ,  H01L33/0079 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  Y10S438/94

摘要： After making a GaN FET by growing GaN semiconductor layers on the surface of a sapphire substrate, the bottom surface of the sapphire substrate is processed by lapping, using an abrasive liquid containing a diamond granular abrasive material and reducing the grain size of the abrasive material in some steps, to reduce the thickness of the sapphire substrate to 100 &mgr;m or less. Thereafter, the bottom surface of the sapphire substrate is processed by etching using an etchant of phosphoric acid or phosphoric acid/sulfuric acid mixed liquid to remove a strained layer by lapping followed by making a via hole by etching the bottom surface of the sapphire substrate by using a similar etchant.

摘要翻译： 在通过在蓝宝石衬底的表面上生长GaN半导体层制造GaN FET之后，通过使用含有金刚石颗粒磨料的研磨液研磨蓝宝石衬底的底表面，并将研磨材料的晶粒尺寸减小 一些步骤，将蓝宝石基板的厚度减小到100um以下。 此后，通过使用磷酸或磷酸/硫酸混合液的蚀刻剂进行蚀刻来处理蓝宝石基板的底面，通过研磨来除去应变层，然后通过用蓝宝石基板的底面蚀刻来形成通孔， 使用类似的蚀刻剂。

公开(公告)号：US6081001A

公开(公告)日：2000-06-27

申请号：US815205

申请日：1997-03-12

申请人： Kenji Funato ,  Tsunenori Asatsuma ,  Hiroji Kawai

发明人： Kenji Funato ,  Tsunenori Asatsuma ,  Hiroji Kawai

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/32

摘要： A luminous intensity of a semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors is improved by having a thickness d of a light emitting layer (active layer) of the semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors ranging from 0.3 nm to 1.5 nm.

摘要翻译： 具有由氮化物III-V族化合物半导体形成的多层结构的半导体发光器件的发光强度通过使半导体发光器件的发光层（有源层）的厚度d具有多层结构， 由0.3nm至1.5nm的氮化物III-V族化合物半导体形成的层结构。

公开(公告)号：US5981980A

公开(公告)日：1999-11-09

申请号：US839903

申请日：1997-04-18

申请人： Takao Miyajima ,  Yann Le Bellego ,  Hiroji Kawai

发明人： Takao Miyajima ,  Yann Le Bellego ,  Hiroji Kawai

IPC分类号： H01L29/201 ,  H01L29/812 ,  H01L33/00 ,  H01L33/16

CPC分类号： H01L33/16 ,  H01L29/201 ,  H01L29/812 ,  H01L33/007

摘要： To provide a semiconductor laminating structure in which an epitaxial growth of a GaN system material is achieved on a substrate with an excellent matching property with the substrate. The semiconductor laminating structure includes the substrate having a perovskite structure and at least one GaN system chemical compound semiconductor layer formed on the substrate, wherein a major surface of the substrate is formed of a (111) crystal surface.

摘要翻译： 提供一种半导体层叠结构，其中在与衬底具有优异的匹配性能的基板上实现GaN系材料的外延生长。 半导体层叠结构包括具有钙钛矿结构的基板和在基板上形成的至少一个GaN系化合物半导体层，其中基板的主表面由（111）晶体表面形成。

公开(公告)号：US5821568A

公开(公告)日：1998-10-13

申请号：US769708

申请日：1996-12-18

申请人： Etsuo Morita ,  Hiroji Kawai

发明人： Etsuo Morita ,  Hiroji Kawai

IPC分类号： H01L21/20 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/10 ,  H01S5/323 ,  H01L33/00

CPC分类号： H01S5/0201 ,  H01S5/0422 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/1082 ,  H01S5/32341

摘要： A semiconductor device such as a semiconductor layer is formed of a compound semiconductor layer of III-V group such as GaN. In the case where the substrate has not any planes that are easy to cleave which coincides with an easy-to-cleave plane of a semiconductor layer grown on the substrate or the substrate easily succumbs to cleavage, then the semiconductor layer together with the substrate can be broken into chips in an easy-to-cleave plane. The cleaved surface of the semiconductor layer can be positively formed as an optically superior surface. A compound semiconductor layer 2 containing at least one of the elements {Ga, Al, In} and N is formed on the substrate 1. This compound semiconductor layer 2 has a pair of facets of {11-20} plane substantially perpendicular to the substrate 1.

摘要翻译： 诸如半导体层的半导体器件由诸如GaN的III-V族的化合物半导体层形成。 在衬底没有任何容易切割的平面与衬底上生长的半导体层的容易解理平面或衬底容易陷入裂纹的情况相一致的情况下，半导体层与衬底一起可以 在易于分裂的飞机上被破碎成碎片。 可以将半导体层的分解面牢固地形成为光学优良的表面。 包含至少一种元素{Ga，Al，In}和N的化合物半导体层2形成在基板1上。该化合物半导体层2具有与基板垂直的{11-20}面的一对面 1。

公开(公告)号：US4751195A

公开(公告)日：1988-06-14

申请号：US66112

申请日：1987-06-25

申请人： Hiroji Kawai

发明人： Hiroji Kawai

IPC分类号： H01L29/205 ,  H01L21/331 ,  H01L29/417 ,  H01L29/73 ,  H01L29/737 ,  H01L21/265 ,  H01R21/20

CPC分类号： H01L29/66318 ,  H01L29/41708 ,  H01L29/7371 ,  Y10S148/011

摘要： A method of manufacturing a heterojunction bipolar transistor in which a collector region, a base region and an emitter region are successively formed on a compound semiconductor substrate, forming the emitter region by epitaxial growth in a concave portion formed on an electrode leading region at the base region.

摘要翻译： 一种异质结双极晶体管的制造方法，其中集电极区域，基极区域和发射极区域依次形成在化合物半导体衬底上，通过在底部的电极引线区域上形成的凹部中外延生长形成发射极区域 地区。

公开(公告)号：US4252669A

公开(公告)日：1981-02-24

申请号：US76856

申请日：1979-09-19

申请人： Hiroji Kawai ,  Tomohiko Abe ,  Shigeru Yokono ,  Teruhiko Hoshina

发明人： Hiroji Kawai ,  Tomohiko Abe ,  Shigeru Yokono ,  Teruhiko Hoshina

IPC分类号： C09K11/77 ,  C09K11/46

CPC分类号： C09K11/7717

摘要： A luminescent material is disclosed which has the general formula:Zn.sub.1-x Cd.sub.x S:Ce.sub.y, M.sub.zwherein M is at least one alkali metal selected from Li, Na, K, Rb, and Cs, x is from about 0 to about 0.3, y and z are densities (g-atom/mol Zn.sub.1-x Cd.sub.x S) of Ce and M relative to Zn.sub.1-x Cd.sub.x S, y is from about 7.times.10.sup.-6 to about 1.5.times.10.sup.-2, and z is from about 7.times.10.sup.-6 to about 1.5.times.10.sup.-2.A method for making a luminescent material having the general formula:(ZnCd)S:Ce,Mwherein M is at least one alkali metal selected from Li, Na, K, Rb and Cs is disclosed which comprises the steps of preparing a mixture of (ZnCD)S:Ce compound, and alkali metal compound, heating the mixture under non-oxidizing atmosphere at a temperature between about 900.degree. C. and about 1170.degree. C., and quenching said mixture from said temperature.

摘要翻译： 公开了具有以下通式的发光材料：Zn1-xCdxS：Cey，Mz其中M是选自Li，Na，K，Rb和Cs中的至少一种碱金属，x为约0至约0.3，y和 z是Ce和M相对于Zn1-xCdxS的密度（g-原子/摩尔Zn1-xCdxS），y为约7×10 -6至约1.5×10 -2，z为约7×10 -6至约1.5×10 -1。 2。 公开了一种制备具有以下通式的发光材料的方法：（ZnCd）S：Ce，M其中M是选自Li，Na，K，Rb和Cs中的至少一种碱金属，其包括以下步骤： （ZnCD）S：Ce化合物和碱金属化合物，在非氧化性气氛下在约900℃至约1170℃的温度下加热混合物，并从所述温度淬灭所述混合物。