公开(公告)号：US5879225A

公开(公告)日：1999-03-09

申请号：US834612

申请日：1997-04-14

申请人： Michio Kudo ,  Yasuo Inada ,  Makoto Nakajima ,  Masanori Fukushima

发明人： Michio Kudo ,  Yasuo Inada ,  Makoto Nakajima ,  Masanori Fukushima

IPC分类号： B24B37/10 ,  B24B37/12 ,  B24B47/10 ,  H01L21/304 ,  B24B7/22

CPC分类号： B24B37/105 ,  B24B47/10

摘要： A polishing machine of the present invention is capable of uniformly polishing a member to be polished with high flatness, and polishing cloth, which is employed in the polishing machine, is uniformly abraded. In the polishing machine, a polishing plate is capable of rotating. A supporting table rotatably supports the polishing plate. A rotary driving mechanism is mounted on the supporting table, and it rotates the polishing plate. A base supports the supporting table. An orbital driving mechanism moves the supporting table along a circular orbit without spinning about its own axis.

摘要翻译： 本发明的抛光机能够以高的平坦度均匀地研磨待抛光的部件，并且在抛光机中使用的抛光布被均匀地磨损。 在抛光机中，抛光板能够旋转。 支撑台可旋转地支撑抛光板。 旋转驱动机构安装在支撑台上，并使抛光板旋转。 基座支撑支撑台。 轨道驱动机构沿着圆形轨道移动支撑台，而不绕其自身的轴线旋转。

公开(公告)号：US09524871B2

公开(公告)日：2016-12-20

申请号：US14236136

申请日：2012-08-10

申请人： Makoto Nakajima ,  Daisuke Sakuma ,  Yuta Kanno ,  Takahiro Kishioka

发明人： Makoto Nakajima ,  Daisuke Sakuma ,  Yuta Kanno ,  Takahiro Kishioka

IPC分类号： H01L21/027 ,  G03F7/11 ,  C07F7/18 ,  G03F7/075 ,  G03F7/09 ,  H01L21/311

CPC分类号： H01L21/0274 ,  C07F7/1804 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0276 ,  H01L21/31133

摘要： A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1): [(R1)aSi(R2)(3−a)]b(R3)  Formula (1) [in Formula (1), R3 is an organic group having a sulfonyl group and a light-absorbing group and is bonded to a Si atom through a Si—C bond; R1 is an alkyl, aryl, aralkyl, halogenated alkyl, halogenated aryl, halogenated aralkyl, alkenyl, an organic group having an epoxy, acryloyl, methacryloyl, mercapto, alkoxyaryl, acyloxyaryl, isocyanurate, hydroxy, cyclic amino, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si—C bond; R2 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3].

公开(公告)号：US09023588B2

公开(公告)日：2015-05-05

申请号：US13580066

申请日：2011-02-18

申请人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

发明人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

IPC分类号： G03F7/075 ,  G03F7/09 ,  G03F7/26 ,  C07F7/18 ,  C09D183/08 ,  C08G77/388

CPC分类号： C07F7/1804 ,  C08G77/388 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/094 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R1aR2bSi(R3)4−(a+b)  Formula (1) wherein R1 is Formula (2): in which R4 is an organic group, and R5 is a C1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X1 is Formula (3), Formula (4), or Formula (5): R2 is an organic group, and R3 is a hydrolysable group.

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。 用于光刻的抗蚀剂下层膜形成组合物包括硅烷化合物，可水解的有机硅烷，其水解产物或其水解缩合产物，其中可水解的有机硅烷是式（1）的可水解的有机硅烷：R1aR2bSi（R3） 4-（a + b）式（1）其中R1是式（2）：其中R4是有机基团，R5是C1-10亚烷基，羟基亚烷基，硫醚键，醚键， 酯键或其组合，X 1为式（3），式（4）或式（5）：R 2为有机基团，R 3为可水解基团。

公开(公告)号：US08864894B2

公开(公告)日：2014-10-21

申请号：US13058109

申请日：2009-08-13

申请人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

发明人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

IPC分类号： C09D183/08 ,  C09D5/00 ,  G03F7/075 ,  G03F7/004 ,  G03F7/095 ,  C08G77/26

CPC分类号： G03F7/0755 ,  C08G77/26 ,  C09D5/006 ,  C09D183/08 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/095 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R1aR2bSi(R3)4−(a+b). A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

摘要翻译： 提供了用于形成抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物，能够用作硬掩模或底部抗反射涂层，或者不与抗蚀剂混合并具有干蚀刻速率的抗蚀剂下层膜 高于抗蚀剂。 一种包含具有鎓基的硅烷化合物的成膜组合物，其中具有鎓基的硅烷化合物是其分子中具有鎓基，其水解产物或其水解缩合产物的可水解的有机硅烷。 该组合物用作光刻的抗蚀剂下层膜形成组合物。 包含具有鎓基的硅烷化合物和不具有鎓基的硅烷化合物的组合物，其中具有鎓基的硅烷化合物以小于1摩尔％的比例存在于全部硅烷化合物中，例如0.01至0.95 ％摩尔。 可水解的有机硅烷可以是式：R1aR2bSi（R3）4-（a + b）的化合物。 14.一种抗蚀剂下层膜，其通过将权利要求1〜14中任一项所述的组合物涂布在半导体基板上，并烘烤该组合物而得到。

公开(公告)号：US20140120730A1

公开(公告)日：2014-05-01

申请号：US14131945

申请日：2012-07-20

申请人： Makoto Nakajima ,  Yuta Kanno ,  Satoshi Takeda ,  Yasushi Sakaida ,  Shuhei Shigaki

发明人： Makoto Nakajima ,  Yuta Kanno ,  Satoshi Takeda ,  Yasushi Sakaida ,  Shuhei Shigaki

IPC分类号： H01L21/033 ,  H01L21/311

CPC分类号： H01L21/0332 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/40 ,  H01L21/31111 ,  H01L21/31138

摘要： A thin film forming composition for forming resist underlayer film useable in the production of a semiconductor device, and a resist upper layer film absorbs undesirable UV light with a thin film as an upper layer of the EUV resist before undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. The thin film forming composition useable together with a resist in a lithography process, comprising a mixture of titanium compound (A) selected from: R0aTi(R1)(4−a)  Formula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B): R2a′R3bSi(R4)4−(a′+b)  Formula (2) a hydrolysis product, or a hydrolysis-condensation product of the mixture, wherein the number of moles of Ti atom is 50% to 90% relative to the total moles in terms of Ti atom and Si atoms in the composition.

摘要翻译： 用于形成用于制造半导体器件的抗蚀剂下层膜的薄膜形成组合物，并且抗蚀剂上层膜在不期望的UV光到达EUV抗蚀剂层之前吸收作为EUV抗蚀剂的上层的薄膜的不期望的UV光 在EUV光刻中，用于EUV抗蚀剂的底层膜（硬掩模），反向材料以及用于溶剂显影用抗蚀剂的下层膜。 该薄膜形成组合物与平版印刷工艺中的抗蚀剂一起使用，包括钛化合物（A）的混合物，其选自：R a Ti（R 1）（4-a）式（1）钛螯合化合物和可水解的钛二聚体 ，和硅化合物（B）：R2a'R3bSi（R4）4-（a'+ b）式（2）水解产物或混合物的水解缩合产物，其中Ti原子的摩尔数为 相对于组合物中Ti原子和Si原子的总摩尔数为50〜90％。

公开(公告)号：US20140109771A1

公开(公告)日：2014-04-24

申请号：US13979885

申请日：2011-08-24

申请人： Yoshihiro Nakao ,  Yoshiaki Yokoo ,  Makoto Nakajima ,  Hiroaki Shimizu ,  Hiroki Furuta ,  Morio Mitsuhashi ,  Kitaro Oka ,  Chiseko Sakuma

发明人： Yoshihiro Nakao ,  Yoshiaki Yokoo ,  Makoto Nakajima ,  Hiroaki Shimizu ,  Hiroki Furuta ,  Morio Mitsuhashi ,  Kitaro Oka ,  Chiseko Sakuma

IPC分类号： A47J31/44

CPC分类号： A47J31/44 ,  A23F5/262 ,  A47J31/407 ,  B65D85/8043

摘要： A roasted plant extraction apparatus is provided which is capable of selectively reducing excessive bitterness in an extract liquid obtained by water extraction from a roasted plant raw material while preserving desirable flavor ingredients and body. A beverage extraction apparatus includes a granule containing part containing granules for extraction of a beverage, first pouring device for pouring an extraction solvent into the granule containing part from a first direction, and collecting device for collecting a coffee extract liquid extracted by device of the extraction solvent at the side of layers of the coffee granules corresponding to the first direction. The granule containing part is provided with a detachable restraining member for placing the granules for extraction of a beverage in a substantially sealed state.

摘要翻译： 本发明提供了一种焙烤植物提取装置，其能够选择性地减少通过从焙烤植物原料中提取水而获得的提取液中的过度的苦味，同时保留理想的风味成分和身体。 一种饮料提取装置，包括：含有颗粒的含有颗粒的颗粒，用于提取饮料;第一倾倒装置，用于从第一方向将提取溶剂注入到所述颗粒容纳部分;以及收集装置，用于收集通过提取装置提取的咖啡提取液 咖啡颗粒层对应于第一方向的溶剂。 颗粒容纳部分设置有用于将基本上密封状态的饮料提取的颗粒放置的可拆卸的限制构件。

公开(公告)号：US20130224957A1

公开(公告)日：2013-08-29

申请号：US13880787

申请日：2011-10-20

申请人： Yuta Kanno ,  Makoto Nakajima ,  Tomoko Misaki ,  Motonobu Matsuyama ,  Masayuki Haraguchi

发明人： Yuta Kanno ,  Makoto Nakajima ,  Tomoko Misaki ,  Motonobu Matsuyama ,  Masayuki Haraguchi

IPC分类号： G03F7/09 ,  H01L21/308 ,  H01L21/027

CPC分类号： G03F7/091 ,  C08G77/14 ,  C08G77/26 ,  C09D183/06 ,  G03F7/0752 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/3081 ,  C08L33/16 ,  C09D183/08

摘要： A resist underlayer film forming composition for lithography includes: as a component (I), a fluorine-containing highly branched polymer obtained by polymerizing a monomer A having two or more radical polymerizable double bonds in the molecule thereof, a monomer B having a fluoroalkyl group and at least one radical polymerizable double bond in the molecule thereof, and a monomer D having a silicon atom-containing organic group and at least one radical polymerizable double bond in the molecule thereof, in the presence of a polymerization initiator C in a content of 5% by mole or more and 200% by mole or less, based on the total mole of the monomer A, the monomer B, and the monomer D; and as a component (II), a hydrolyzable silane compound, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a silicon-containing compound that is a combination of these compounds.

摘要翻译： 用于光刻的抗蚀剂下层膜形成组合物包括：作为组分（I），通过在其分子中聚合具有两个或更多个可自由基聚合的双键的单体A获得的含氟高支化聚合物，具有氟烷基的单体B 和分子中的至少一个自由基聚合性双键，以及分子中具有含硅原子的有机基团和至少一个自由基聚合性双键的单体D，在聚合引发剂C的存在下， 相对于单体A，单体B和单体D的总摩尔数为5摩尔％以上且200摩尔％以下。 作为组分（II），可水解硅烷化合物，其水解产物，其水解缩合产物或这些化合物的组合的含硅化合物。

公开(公告)号：US20120315765A1

公开(公告)日：2012-12-13

申请号：US13580066

申请日：2011-02-18

申请人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

发明人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

IPC分类号： C09D183/08 ,  B32B27/00 ,  C07F7/04 ,  H01L21/311 ,  C08K3/20 ,  C08K5/41

CPC分类号： C07F7/1804 ,  C08G77/388 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/094 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R1aR2bSi(R3)4−(a+b)  Formula (1) wherein R1 is Formula (2): in which R4 is an organic group, and R5 is a C1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X1 is Formula (3), Formula (4), or Formula (5): R2 is an organic group, and R3 is a hydrolysable group.

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。 用于光刻的抗蚀剂下层膜形成组合物包括硅烷化合物，可水解的有机硅烷，其水解产物或其水解缩合产物，其中可水解的有机硅烷是式（1）的可水解的有机硅烷：R1aR2bSi（R3） 4-（a + b）式（1）其中R1是式（2）：其中R4是有机基团，R5是C1-10亚烷基，羟基亚烷基，硫醚键，醚键， 酯键或其组合，X 1为式（3），式（4）或式（5）：R 2为有机基团，R 3为可水解基团。

公开(公告)号：US20120178261A1

公开(公告)日：2012-07-12

申请号：US13496768

申请日：2010-09-07

申请人： Yuta Kanno ,  Makoto Nakajima ,  Wataru Shibayama

发明人： Yuta Kanno ,  Makoto Nakajima ,  Wataru Shibayama

IPC分类号： H01L21/311 ,  C07F7/18 ,  G03F7/00

CPC分类号： C08G77/04 ,  C08G77/28 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094

摘要： There is provided a lithographic resist underlayer film-forming composition for forming a resist underlayer film which can be used as a hard mask. A lithographic resist underlayer film-forming composition including a silane compound having sulfonamide group, wherein the silane compound having sulfonamide group is a hydrolyzable organosilane having a sulfonamide group in the molecule, a hydrolyzate thereof, or a hydrolytic condensation product thereof. The composition including a silane compound having sulfonamide group and a silane compound lacking a sulfonamide group, wherein the silane compound having sulfonamide group is present within the silane compounds overall in a proportion of less than 1 mol %, for example 0.1 to 0.95 mol %.

摘要翻译： 提供了可用作硬掩模的用于形成抗蚀剂下层膜的平版印刷抗蚀剂下层膜形成组合物。 含有具有磺酰胺基的硅烷化合物的平版印刷抗蚀剂下层膜形成用组合物，其中，具有磺酰胺基的硅烷化合物为分子内具有磺酰胺基的水解性有机硅烷，其水解物或其水解缩合物。 所述组合物包括具有磺酰胺基团的硅烷化合物和不具有磺酰胺基团的硅烷化合物，其中具有磺酰胺基团的硅烷化合物总体上以小于1摩尔％，例如0.1至0.95摩尔％的比例存在于硅烷化合物中。

公开(公告)号：US08140793B2

公开(公告)日：2012-03-20

申请号：US12490604

申请日：2009-06-24

申请人： Hajime Nonaka ,  Yoshiaki Mori ,  Makoto Nakajima ,  Muneyuki Yoshikawa

发明人： Hajime Nonaka ,  Yoshiaki Mori ,  Makoto Nakajima ,  Muneyuki Yoshikawa

IPC分类号： G06F13/00

CPC分类号： G06F1/3203 ,  G06F1/3268 ,  G06F3/0625 ,  G06F3/0634 ,  G06F3/0686 ,  Y02D10/154

摘要： To provide a virtual tape device to reduce power consumption by utilizing a disk array device conforming to MAID. Two or more disk devices are divided into an information managing disk group whose power is kept on at all times and to two or more recording disk groups whose power is turned on/off as necessary when managing data. The virtual tape device includes: a volume information managing part which manages positions of virtual tapes allotted to storage areas of the recording disk groups; and a data managing part which rearranges, in the recording disk group whose power is on, the virtual tape for storing the data to the recording disk group whose power is off based on writing/reading information stored in the information managing disk group and positional information of the virtual tapes, and executes a control to write backup data to the recording disk group whose power is on.

摘要翻译： 通过利用符合MAID的磁盘阵列设备来提供虚拟磁带设备以降低功耗。 两个或更多个磁盘设备被分成一直保持功率的信息管理磁盘组，并且在管理数据时，根据需要将其功率打开/关闭的两个或更多个记录磁盘组分配。 虚拟磁带装置包括：卷信息管理部，其管理分配给记录盘组的存储区域的虚拟磁带的位置; 以及数据管理部，其根据存储在信息管理盘组中的写入/读取信息，在存储在信息管理盘组中的写入/读取信息的情况下，重新排列在电源打开的记录盘组中，将用于存储数据的虚拟磁带重新排列到电源关闭的记录盘组上， 的虚拟磁带，并且执行控制以将备份数据写入到其打开电源的记录盘组。