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公开(公告)号：US20190259886A1
公开(公告)日：2019-08-22
申请号：US16400390
申请日：2019-05-01
IPC分类号： H01L31/0236 , H01L31/047 , H01L31/18 , H01L31/075 , H01L31/046
摘要： A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.
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公开(公告)号：US10388808B2
公开(公告)日：2019-08-20
申请号：US16013372
申请日：2018-06-20
IPC分类号： H01L31/0236 , H01L31/047 , H01L31/18 , H01L31/075 , H01L31/046
摘要： A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.
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公开(公告)号：US10347779B2
公开(公告)日：2019-07-09
申请号：US15622515
申请日：2017-06-14
IPC分类号： H01L31/18 , H01L31/075 , H01L31/077 , H01L31/0224 , H01L31/0236 , H01L31/0352 , H01L31/0376
摘要： A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.
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公开(公告)号：US09917220B2
公开(公告)日：2018-03-13
申请号：US15077169
申请日：2016-03-22
IPC分类号： H01L31/0376 , H01L31/0392 , H01L31/075 , H01L31/07 , H01L31/18 , H01L31/20
CPC分类号： H01L31/03921 , H01L31/03762 , H01L31/03767 , H01L31/07 , H01L31/075 , H01L31/1884 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.
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公开(公告)号：US09634164B2
公开(公告)日：2017-04-25
申请号：US14949230
申请日：2015-11-23
IPC分类号： H01L31/0376 , H01L31/18 , H01L31/0224 , H01L31/075
CPC分类号： H01L31/03767 , H01L31/022466 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. An intrinsic layer and an n-type layer are formed over the p-type layer.
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36.发明申请公开(公告)号：US20150325713A1
公开(公告)日：2015-11-12
申请号：US14803847
申请日：2015-07-20
IPC分类号： H01L31/0236 , H01L31/0224 , H01L31/18 , H01L31/105
CPC分类号： H01L31/02363 , H01L31/022425 , H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/035281 , H01L31/105 , H01L31/1884 , Y02E10/50
摘要： A photovoltaic device includes a substrate layer having a plurality of three-dimensional structures formed therein providing a textured profile. A first electrode is formed over the substrate layer and extends over the three-dimensional structures including non-planar surfaces. The first electrode has a thickness configured to maintain the textured profile, and the first electrode includes a transparent conductive material having a dopant metal activated within the transparent conductive material. A continuous photovoltaic stack is conformally formed over the first electrode, and a second electrode is formed on the photovoltaic stack.
摘要翻译： 光伏器件包括其中形成有多个三维结构的衬底层，其提供纹理轮廓。 第一电极形成在衬底层之上，并且在包括非平面表面的三维结构上延伸。 第一电极具有被配置为保持纹理轮廓的厚度，并且第一电极包括在透明导电材料内激活的掺杂剂金属的透明导电材料。 在第一电极上保形地形成连续的光伏堆叠，并且在光伏堆叠上形成第二电极。
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公开(公告)号：US09093275B2
公开(公告)日：2015-07-28
申请号：US14059797
申请日：2013-10-22
IPC分类号： H01L21/027 , H01L21/02 , H01L29/78 , H01L29/786 , H01L21/18 , H01L29/165
CPC分类号： H01L27/1211 , H01L21/02433 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/182 , H01L21/845 , H01L29/04 , H01L29/1608 , H01L29/165 , H01L29/785 , H01L29/78603
摘要： A dielectric material layer is formed on a semiconductor-on-insulator (SOI) substrate including a top semiconductor layer containing a first semiconductor material. An opening is formed within the dielectric material layer, and a trench is formed in the top semiconductor layer within the area of the opening by an etch. A second semiconductor material is deposited to a height above the top surface of the top semiconductor layer employing a selective epitaxy process. Another dielectric material layer can be deposited, and another trench can be formed in the top semiconductor layer. Another semiconductor material can be deposited to a different height employing another selective epitaxy process. The various semiconductor material portions can be patterned to form semiconductor fins having different heights and/or different compositions.
摘要翻译： 在包含第一半导体材料的顶部半导体层的绝缘体上半导体（SOI）基板上形成电介质材料层。 在电介质材料层内形成一个开口，并通过蚀刻在开口区域内的顶部半导体层中形成沟槽。 使用选择性外延工艺将第二半导体材料沉积到顶部半导体层的顶表面上方的高度。 可以沉积另一个介电材料层，并且可以在顶部半导体层中形成另一个沟槽。 可以使用另一选择性外延工艺将另一种半导体材料沉积到不同的高度。 各种半导体材料部分可以被图案化以形成具有不同高度和/或不同组成的半导体鳍片。
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