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公开(公告)号：US09741880B2
公开(公告)日：2017-08-22
申请号：US14710149
申请日：2015-05-12
IPC分类号： H01L31/0236 , H01L31/0376 , H01L31/077 , H01L31/18 , H01L31/0352 , H01L31/0224 , H01L31/075
CPC分类号： H01L31/02366 , H01L31/022483 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03762 , H01L31/075 , H01L31/077 , H01L31/1804 , H01L31/1888 , Y02E10/50
摘要： A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.
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公开(公告)号：US20150333087A1
公开(公告)日：2015-11-19
申请号：US14809919
申请日：2015-07-27
IPC分类号： H01L27/12 , H01L29/16 , H01L29/04 , H01L29/165
CPC分类号： H01L27/1211 , H01L21/02433 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/182 , H01L21/845 , H01L29/04 , H01L29/1608 , H01L29/165 , H01L29/785 , H01L29/78603
摘要： A dielectric material layer is formed on a semiconductor-on-insulator (SOI) substrate including a top semiconductor layer containing a first semiconductor material. An opening is formed within the dielectric material layer, and a trench is formed in the top semiconductor layer within the area of the opening by an etch. A second semiconductor material is deposited to a height above the top surface of the top semiconductor layer employing a selective epitaxy process. Another dielectric material layer can be deposited, and another trench can be formed in the top semiconductor layer. Another semiconductor material can be deposited to a different height employing another selective epitaxy process. The various semiconductor material portions can be patterned to form semiconductor fins having different heights and/or different compositions.
摘要翻译： 在包含第一半导体材料的顶部半导体层的绝缘体上半导体（SOI）基板上形成电介质材料层。 在电介质材料层内形成一个开口，并通过蚀刻在开口区域内的顶部半导体层中形成沟槽。 使用选择性外延工艺将第二半导体材料沉积到顶部半导体层的顶表面上方的高度。 可以沉积另一个介电材料层，并且可以在顶部半导体层中形成另一个沟槽。 可以使用另一选择性外延工艺将另一种半导体材料沉积到不同的高度。 各种半导体材料部分可以被图案化以形成具有不同高度和/或不同组成的半导体鳍片。
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3.发明申请UNIFORMLY DISTRIBUTED SELF-ASSEMBLED CONE-SHAPED PILLARS FOR HIGH EFFICIENCY SOLAR CELLS 有权用于高效太阳能电池的均匀分布自组装式锥形支架公开(公告)号：US20140124033A1
公开(公告)日：2014-05-08
申请号：US14153728
申请日：2014-01-13
发明人： Christos Dimitrakopoulos , Augustin J. Hong , Jeehwan Kim , Devendra K. Sadana , Kuen-Ting Shiu
IPC分类号： H01L31/0236
CPC分类号： G06F3/061 , G06F3/064 , G06F3/0647 , G06F3/0653 , G06F3/0689 , G06F11/0727 , G06F11/1076 , G06F12/02 , H01L31/02366 , H04L67/1002 , H04W8/04 , H04W8/065 , Y02E10/50
摘要： A method for fabricating a photovoltaic device includes applying a diblock copolymer layer on a substrate and removing a first polymer material from the diblock copolymer layer to form a plurality of distributed pores. A pattern forming layer is deposited on a remaining surface of the diblock copolymer layer and in the pores in contact with the substrate. The diblock copolymer layer is lifted off and portions of the pattern forming layer are left in contact with the substrate. The substrate is etched using the pattern forming layer to protect portions of the substrate to form pillars in the substrate such that the pillars provide a radiation absorbing structure in the photovoltaic device.
摘要翻译： 一种制造光伏器件的方法包括在基片上涂布二嵌段共聚物层，并从二嵌段共聚物层除去第一聚合物材料以形成多个分布孔。 图案形成层沉积在二嵌段共聚物层的剩余表面上和与基材接触的孔中。 剥离二嵌段共聚物层，使图案形成层的一部分与基板保持接触。 使用图案形成层蚀刻衬底以保护衬底的部分以在衬底中形成柱，使得柱在光伏器件中提供辐射吸收结构。
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公开(公告)号：US10230015B2
公开(公告)日：2019-03-12
申请号：US14697250
申请日：2015-04-27
发明人： Ahmed Abou-Kandil , Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Mohamed Saad , Devendra K. Sadana
IPC分类号： H01L31/044 , H01L31/075 , H01L27/146 , H01L31/20 , H01L31/0224 , H01L31/0288
摘要： A photovoltaic device includes a p-type layer. An intrinsic layer is formed directly on the p-type layer and includes an interface region extending into the intrinsic layer that includes a gradually decreasing band gap energy going from the p-type layer into the intrinsic layer formed by a graded deposition temperature. An n-type layer is formed directly on the intrinsic layer.
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公开(公告)号：US20180315867A1
公开(公告)日：2018-11-01
申请号：US16013372
申请日：2018-06-20
IPC分类号： H01L31/0236 , H01L31/047 , H01L31/18 , H01L31/075 , H01L31/046
CPC分类号： H01L31/02366 , H01L31/046 , H01L31/047 , H01L31/075 , H01L31/18 , Y02E10/50 , Y10T428/24479
摘要： A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.
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公开(公告)号：US09935215B2
公开(公告)日：2018-04-03
申请号：US14803847
申请日：2015-07-20
IPC分类号： H01L31/0236 , H01L31/105 , H01L31/0224 , H01L31/18 , H01L31/0352
CPC分类号： H01L31/02363 , H01L31/022425 , H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/035281 , H01L31/105 , H01L31/1884 , Y02E10/50
摘要： A photovoltaic device includes a substrate layer having a plurality of three-dimensional structures formed therein providing a textured profile. A first electrode is formed over the substrate layer and extends over the three-dimensional structures including non-planar surfaces. The first electrode has a thickness configured to maintain the textured profile, and the first electrode includes a transparent conductive material having a dopant metal activated within the transparent conductive material. A continuous photovoltaic stack is conformally formed over the first electrode, and a second electrode is formed on the photovoltaic stack.
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7.发明授权公开(公告)号：US09537038B2
公开(公告)日：2017-01-03
申请号：US14941023
申请日：2015-11-13
发明人： Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
IPC分类号： H01L31/075 , H01L31/18 , H01L31/20 , H01L31/0224
CPC分类号： H01L31/075 , H01L31/022466 , H01L31/1804 , H01L31/1884 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.
摘要翻译： 一种用于形成光伏器件的方法包括在衬底上沉积p型层。 通过将p型层暴露于氧化剂，在p型层上形成阻挡层。 在势垒层上形成本征层，在本征层上形成n型层。
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8.发明授权Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices 有权双层透明导电氧化物，用于降低光伏器件中的肖特基势垒公开(公告)号：US09379259B2
公开(公告)日：2016-06-28
申请号：US13668941
申请日：2012-11-05
发明人： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC分类号： H01L31/075 , H01L31/0224 , H01L31/0392 , H01L31/18
CPC分类号： H01L31/022483 , H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1884 , Y02E10/548
摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
摘要翻译： 一种用于制造光伏器件的器件和方法包括在透明衬底上形成双层透明导电氧化物。 双层透明导电氧化物包括在衬底上形成掺杂电极层，并在掺杂电极层上形成缓冲层。 缓冲层包括与掺杂电极层相同材料的未掺杂或p型掺杂本征形式。 光吸收半导体结构包括缓冲层上的p型半导体层，本征层和n型半导体层。
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公开(公告)号：US20150075608A1
公开(公告)日：2015-03-19
申请号：US14543456
申请日：2014-11-17
发明人： Ahmed Abou-Kandil , Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Hisham S. Mohamed , Devendra K. Sadana
IPC分类号： H01L31/0216 , H01L31/0236 , H01L31/0224
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/02366 , Y02E10/50
摘要： An electronic device includes a substrate and a plurality of particles anchored to the substrate. An electrode material is formed over the particles and configured to form peaks over the particles. One or more operational layers are formed over the electrode material for performing a device function.
摘要翻译： 电子设备包括基板和锚定到基板的多个颗粒。 在颗粒上形成电极材料，并且构造成在颗粒上形成峰。 在电极材料上形成一个或多个操作层，以执行器件功能。
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公开(公告)号：US20140217408A1
公开(公告)日：2014-08-07
申请号：US13760509
申请日：2013-02-06
IPC分类号： H01L31/0376
CPC分类号： H01L31/03921 , H01L31/03762 , H01L31/03767 , H01L31/07 , H01L31/075 , H01L31/1884 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.
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