公开(公告)号：US20120148184A1

公开(公告)日：2012-06-14

申请号：US13311837

申请日：2011-12-06

申请人： Yoshihiro Yoneda ,  Kenji Koyama ,  Hirohiko Kobayashi

发明人： Yoshihiro Yoneda ,  Kenji Koyama ,  Hirohiko Kobayashi

IPC分类号： G02F1/025 ,  H01L21/302

CPC分类号： G02F1/025 ,  G02F1/01708 ,  G02F2201/066 ,  G02F2201/12 ,  G02F2202/102

摘要： A process to manufacture a semiconductor optical modulator is disclosed, in which the process easily forms a metal film including AuZn for the p-ohmic metal even a contact hole has an enhanced aspect ration. The process forms a mesa including semiconductor layers first, then, buries the mesa by a resin layer sandwiched by insulating films. The resin layer provides an opening reaching the top of the mesa, into which the p-ohmic metal is formed. Another metal film including Ti is formed on the upper insulating film along the opening.

摘要翻译： 公开了一种制造半导体光调制器的方法，其中该方法容易地形成包括用于p-欧姆金属的AuZn的金属膜，即使接触孔具有增强的纵横比。 该方法首先形成包括半导体层的台面，然后通过被绝缘膜夹在中间的树脂层掩埋台面。 树脂层提供达到台面顶部的开口，形成p欧姆金属。 包括Ti的另一金属膜沿着开口形成在上绝缘膜上。

公开(公告)号：US07988945B2

公开(公告)日：2011-08-02

申请号：US12303127

申请日：2007-06-26

申请人： Yoshihiro Yoneda ,  Shuji Ogura ,  Isamu Yashima

发明人： Yoshihiro Yoneda ,  Shuji Ogura ,  Isamu Yashima

IPC分类号： C01G33/00

CPC分类号： C01G33/00 ,  C01P2002/72 ,  C01P2006/12 ,  C01P2006/14 ,  C01P2006/40 ,  H01G9/052 ,  H01G9/0525

摘要： An object of the present invention is to provide a niobium monoxide able to realize large capacitance in a miniature sized capacitor. The invention relates to a niobium monoxide having a porous structure comprising particles, characterized in that the niobium monoxide has a full-width at half maximum of an X-ray diffraction peak corresponding to a (111) plane or an X-ray diffraction peak corresponding to a (200) plane of 0.21° to 1.0°. The niobium monoxide has a large specific surface area and porosity, and is especially suitable for use in a capacitor.

摘要翻译： 本发明的目的是提供一种能够在小型电容器中实现大电容的铌氧化物。 本发明涉及一种具有包含颗粒的多孔结构的铌氧化物，其特征在于，所述铌氧化物具有对应于（111）面的X射线衍射峰的半峰全宽或对应于X射线衍射峰 到（2.21）至（1.0）的（200）平面。 一氧化铌具有大的比表面积和孔隙率，特别适用于电容器。

公开(公告)号：US07909041B2

公开(公告)日：2011-03-22

申请号：US10544573

申请日：2004-07-15

申请人： Yoshihiro Yoneda ,  Masahiro Makino ,  Akemi Sato ,  Mutsumi Kawasaki ,  Kiwako Asakura

发明人： Yoshihiro Yoneda ,  Masahiro Makino ,  Akemi Sato ,  Mutsumi Kawasaki ,  Kiwako Asakura

IPC分类号： A41G3/00 ,  B32B7/12

CPC分类号： A41G3/0025 ,  Y10T428/28

摘要： A double-stick adhesive tape (10) for fixing a wig (100) to a head, of which the surface of at least one side (12) of both sides of adhesive layers (12, 13) on a core material (11) is deglossed by forming minute concavity and convexity (12a), one side of adhesive layer (12) is formed to have a thickness to bury at least more than half of a wire diameter of the filament (103) used as a net member of a wig base (101), thereby one side of adhesive layer (12) is set inside of a network (104) of the net member, and bonded to the net member, a filament (103) is peripherally bonded with the adhesive layer (12) and the other adhesive layer (13) is bonded to the head.

摘要翻译： 一种用于将假发（100）固定到头部的双面粘合带（10），其中芯材（11）上的粘合剂层（12,13）两侧的至少一侧（12）的表面， 通过形成微小的凹凸（12a）而变形，粘合剂层（12）的一侧被形成为具有至少大于用作网状构件的丝网（103）的丝直径的一半以上的厚度 假设基体（101），由此将粘合剂层（12）的一侧设置在网状部件（104）的内部，并且与网状部件接合，将长丝（103）与粘接层（12） ），另一个粘合层（13）粘合到头部。

公开(公告)号：US07807954B2

公开(公告)日：2010-10-05

申请号：US12059232

申请日：2008-03-31

申请人： Yoshihiro Yoneda ,  Ryuji Yamabi

发明人： Yoshihiro Yoneda ,  Ryuji Yamabi

IPC分类号： G01J1/42

CPC分类号： H01L25/167 ,  G02B6/4257 ,  H01L31/02161 ,  H01L31/105 ,  H01L2924/0002 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/0264 ,  H01L2924/00

摘要： An optical semiconductor module with a light receiving element with an upper and side light receiving face and a light emitting element mounted on the same mounting carrier. The light receiving element has a light receiving face on an upper face and a side face covered with an antireflection film. The mounting unit has the light emitting element and the light receiving element mounted so that they encompass a positional relationship that the light emitted from the light emitting element is optically connected at least on the light receiving face of the side face of the light receiving element.

摘要翻译： 一种具有光接收元件的光学半导体模块，其具有上和下光接收面以及安装在同一安装载体上的发光元件。 光接收元件具有在上表面上的光接收面和被防反射膜覆盖的侧面。 安装单元具有安装发光元件和受光元件，使得它们包含从发光元件发射的光至少在光接收元件的侧面的光接收面上光学连接的位置关系。

公开(公告)号：US20100151620A1

公开(公告)日：2010-06-17

申请号：US12711881

申请日：2010-02-24

申请人： Yoshihiro Yoneda ,  Ryuji Yamabi

发明人： Yoshihiro Yoneda ,  Ryuji Yamabi

IPC分类号： H01L31/18

CPC分类号： H01L31/105 ,  H01L31/03046 ,  H01L31/1035 ,  H01L31/18

摘要： A semiconductor photo detecting element includes a PIN-type photo detecting element and window semiconductor layer. The PIN-type photo detecting element has a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The first semiconductor layer is provided on the semiconductor substrate, is lattice-matched to the semiconductor substrate, includes a first conductivity type dopant, and has first band gap energy. The second semiconductor layer is provided on the first semiconductor layer, has the first band gap energy, and has a concentration of the first conductivity type dopant lower than that of the first semiconductor layer or is substantially undoped. The third semiconductor layer is provided on the second semiconductor layer. The window semiconductor layer has second band gap energy larger than the first band gap energy at a light-incoming side with respect to the second semiconductor layer and has a thickness of 5 nm to 50 nm.

摘要翻译： 半导体光电检测元件包括PIN型光检测元件和窗半导体层。 PIN型光检测元件具有半导体衬底，第一半导体层，第二半导体层和第三半导体层。 第一半导体层设置在半导体衬底上，与半导体衬底晶格匹配，包括第一导电型掺杂剂，并且具有第一带隙能量。 第二半导体层设置在第一半导体层上，具有第一带隙能量，并且第一导电类型掺杂物的浓度低于第一半导体层的浓度或基本上未掺杂。 第三半导体层设置在第二半导体层上。 窗口半导体层具有比相对于第二半导体层的光入射侧的第一带隙能量大的第二带隙能量，并且具有5nm至50nm的厚度。

公开(公告)号：US20100009354A1

公开(公告)日：2010-01-14

申请号：US12279924

申请日：2007-02-20

申请人： Takeharu Nagai ,  Tomomi Tani ,  Ippei Kotera ,  Yoshihiro Yoneda

发明人： Takeharu Nagai ,  Tomomi Tani ,  Ippei Kotera ,  Yoshihiro Yoneda

IPC分类号： C12Q1/68 ,  C07H21/04 ,  C12M1/34

CPC分类号： C12Q1/6869 ,  C12Q2563/107 ,  C12Q2521/313 ,  C12Q2521/501

摘要： The present invention provides a method for determining the base sequence of a DNA. According to the method for determining the base sequence of a DNA of the present invention, a probe is used, which is a probe having a protruding end and identification-labeled according to the species of the base at the protruding end, containing a recognition sequence of a class IIS restriction enzyme, to carry out simultaneously in a chain reaction, for a plurality of DNAs to be analyzed, ligation of the end base of a DNA to be analyzed and a probe and cleavage of the end base of the DNA to be analyzed, allowing the base sequence to be determined sequentially by a single molecule spectrofluorimetry method, such that an effective determination of the base sequence of a DNA becomes possible.

摘要翻译： 本发明提供了确定DNA碱基序列的方法。 根据本发明的DNA的碱基序列的测定方法，使用探针，该探针是具有突出端的探针，根据突起端的碱基的种类鉴定标记，其含有识别序列 的IIS类限制酶，在连锁反应中同时进行多个要分析的DNA，连接待分析的DNA的末端碱基和探针，并将DNA的末端碱基切割成 分析，通过单分子分光荧光法依次确定碱基序列，使得DNA的碱基序列的有效测定成为可能。

公开(公告)号：US20070176274A1

公开(公告)日：2007-08-02

申请号：US11717066

申请日：2007-03-13

申请人： Yoshihiro Yoneda ,  Takahiro Asada

发明人： Yoshihiro Yoneda ,  Takahiro Asada

IPC分类号： H01L23/02

CPC分类号： H01L31/0203 ,  H01L23/3185 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/05554 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/16151 ,  H01L2924/16195 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01S5/005 ,  H01S5/02216 ,  H01S5/02228 ,  H01S5/02296 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present disclosure provides an optical functional device-mounted module which needs no expensive or special members, can be reduced in size, and provide a producing process thereof. A bank to dam a liquid sealing resin is provided on a substrate around an optical functional device, the substrate being formed with a predetermined wiring pattern and having the optical functional device mounted thereon. The liquid sealing resin is filled between the functional device and the bank by dropping the liquid sealing resin therebetween. A package component member having a light transmission hole corresponding to an optical function part of the optical functional device is brought into contact with the bank such that the light transmission hole is opposed to the function part of the optical functional device, thereby causing the package component member to contact with the liquid sealing resin. The package component member is fixed onto the substrate by curing the liquid sealing resin and the bank is finally cut off and removed.

摘要翻译： 本公开提供了一种不需要昂贵或特殊构件的光学功能装置安装模块，可以减小尺寸并提供其制造方法。 在光学功能器件周围的基板上设置有用于防止液体密封树脂的堤坝，该基板由预定的布线图案形成并且安装有光学功能元件。 液体密封树脂通过在其间滴落液体密封树脂而填充在功能元件和堤岸之间。 具有与光功能元件的光学功能部分相对应的透光孔的封装部件与堤相接触，使得透光孔与光功能元件的功能部分相对，从而使封装元件 与液体密封树脂接触的部件。 通过固化液体密封树脂将封装构件部件固定在基板上，最后切断并移除堤岸。

公开(公告)号：US20050247993A1

公开(公告)日：2005-11-10

申请号：US11166247

申请日：2005-06-27

申请人： Yoshihiro Yoneda ,  Ikuo Hanawa

发明人： Yoshihiro Yoneda ,  Ikuo Hanawa

IPC分类号： H01L31/10 ,  H01L29/732 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/103 ,  H01L31/107 ,  H01L31/109

CPC分类号： H01L31/1075 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/1035 ,  H01L31/105

摘要： A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.

公开(公告)号：US08573485B2

公开(公告)日：2013-11-05

申请号：US11727725

申请日：2007-03-28

申请人： Yoshihiro Yoneda ,  Akira Wakatsuki

发明人： Yoshihiro Yoneda ,  Akira Wakatsuki

IPC分类号： G06K7/00

CPC分类号： G06F13/102

摘要： An information processing apparatus is capable of being connected to an IC card via a reader/writer. The information processing apparatus includes a middleware and a device driver provided so as to correspond to the reader/writer. The middleware provides a plurality of applications for the IC card with basic functions shared by the applications. The device driver sequentially processes a plurality of commands received from the plurality of applications via the middleware in the order in which the commands are received so as to control the corresponding reader/writer. In this way, the applications concurrently access the reader/writer.

摘要翻译： 信息处理装置能够经由读写器与IC卡连接。 信息处理设备包括中间件和设备驱动器，以便与读/写器对应。 中间件为IC卡提供了多个应用程序，具有应用程序共享的基本功能。 设备驱动器按照接收命令的顺序依次处理从多个应用程序接收的多个命令，以控制对应的读取器/写入器。 这样，应用程序同时访问读写器。

公开(公告)号：US07875946B2

公开(公告)日：2011-01-25

申请号：US11259196

申请日：2005-10-27

申请人： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

发明人： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

IPC分类号： H01L31/107

CPC分类号： H01L31/1864 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1075

摘要： In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

摘要翻译： 为了通过防止具有诸如台面APD的台面结构的半导体光电检测器中的边缘破坏来提高可靠性，半导体光电检测器包括形成在形成在半导体基板上的第一导电类型的第一半导体层上的台面结构，台面结构 包括用于吸收光的光吸收层，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩倍增 在台面结构的侧面附近的部分的层的厚度比台面结构的中央部的厚度薄。