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    Digital exposure apparatus and method of exposing a substrate using the same
    32.
    发明授权
    Digital exposure apparatus and method of exposing a substrate using the same 有权
    数字曝光装置及使用其的曝光基板的方法

    公开(公告)号：US09025132B2

    公开(公告)日：2015-05-05

    申请号：US13406828

    申请日：2012-02-28

    申请人： Sang-Hyun Yun ,  Cha-Dong Kim ,  Jung-In Park ,  Su-Yeon Sim ,  Hi-Kuk Lee

    发明人： Sang-Hyun Yun ,  Cha-Dong Kim ,  Jung-In Park ,  Su-Yeon Sim ,  Hi-Kuk Lee

    IPC分类号： G03B27/54 ,  G03B27/42 ,  G03F7/20

    CPC分类号： G03F7/70275

    摘要： A digital exposure apparatus includes a displaceable stage, a light source part, a digital micro mirror part and a micro lens part. A substrate is disposed on the stage. The light source part generates a first light. The digital micro mirror part is disposed over the stage. The digital micro mirror part includes a plurality of digital micro mirrors. The digital micro mirror converts the first light into one or more second light beams. The micro lens part is disposed between the stage and the digital micro mirror part and includes a plurality of micro lenses. The micro lenses convert the one or more second light beams into one or more third light beams which are irradiated upon the substrate. The third light has an oval cross sectional shape.

    摘要翻译： 数字曝光装置包括可位移台，光源部分，数字微镜部分和微透镜部分。 衬底设置在平台上。 光源部分产生第一光。 数字微镜部分设置在舞台上。 数字微镜部分包括多个数字微镜。 数字微镜将第一光转换成一个或多个第二光束。 微透镜部分设置在平台和数字微镜部分之间并且包括多个微透镜。 微透镜将一个或多个第二光束转换成照射在基板上的一个或多个第三光束。 第三个光具有椭圆形横截面形状。

    Method of determining an overlap distance of an optical head and digital exposure device using the method
    33.
    发明授权
    Method of determining an overlap distance of an optical head and digital exposure device using the method 有权
    使用该方法确定光学头和数字曝光装置的重叠距离的方法

    公开(公告)号：US08625109B2

    公开(公告)日：2014-01-07

    申请号：US12902745

    申请日：2010-10-12

    申请人： Sang-Hyun Yun ,  Hi-Kuk Lee ,  Sang-Woo Bae ,  Cha-Dong Kim ,  Jung-In Park

    发明人： Sang-Hyun Yun ,  Hi-Kuk Lee ,  Sang-Woo Bae ,  Cha-Dong Kim ,  Jung-In Park

    IPC分类号： G01B11/14 ,  G03B27/32 ,  G03F9/00 ,  G03C5/00

    CPC分类号： G01B11/14 ,  G03F7/70291 ,  G03F7/70475

    摘要： An apparatus and a method for determining an overlap distance of an optical head is disclosed. Positions and light amount distributions of each light spot can be measured, which may be provided from an optical head to a substrate. Gaussian distribution may be applied to the positions and the light amount distributions to calculate a compensation model of each of the light spots. A first accumulated light amount corresponding to each first area of the substrate may be calculated if the optical head is scanning along a first direction of the substrate using the compensation model. A second accumulated light amount corresponding to each second area overlapped with the each first area is calculated if the optical head is scanning along the first direction, which is moved in a second direction by a first distance using the compensation model. An overlap distance may be determined based on a uniformity of summations of the first and second accumulated light amount.

    摘要翻译： 公开了一种用于确定光学头的重叠距离的装置和方法。 可以测量每个光点的位置和光量分布，其可以从光学头到基底提供。 高斯分布可以应用于位置和光量分布，以计算每个光点的补偿模型。 如果光头使用补偿模型沿着衬底的第一方向扫描，则可以计算对应于衬底的每个第一区域的第一累积光量。 如果光头沿着使用补偿模型在第二方向上以第一距离移动的第一方向进行扫描，则计算与每个第一区域重叠的每个第二区域对应的第二累积光量。 可以基于第一和第二累积光量的相加的均匀性来确定重叠距离。

    Method of manufacturing a display substrate and method of manufacturing a display apparatus using the same
    34.
    发明授权
    Method of manufacturing a display substrate and method of manufacturing a display apparatus using the same 失效
    显示基板的制造方法及使用其的显示装置的制造方法

    公开(公告)号：US08557620B2

    公开(公告)日：2013-10-15

    申请号：US12421555

    申请日：2009-04-09

    申请人： Pil-Soon Hong ,  Jung-In Park ,  Hi-Kuk Lee

    发明人： Pil-Soon Hong ,  Jung-In Park ,  Hi-Kuk Lee

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1288 ,  H01L27/3248 ,  H01L2227/323

    摘要： Provided is a method of manufacturing a display substrate. In the method, a gate line, a data line crossing the gate line, and a switching device are formed on a base substrate. A passivation layer, a first resist layer and a second resist layer are formed on the base substrate. The first resist layer and the second resist layer are patterned to form a resist pattern and an etch-stop pattern, the etch-stop pattern having a sidewall protruding from a sidewall of the resist pattern. A portion of the passivation layer is removed to form a contact hole on a drain electrode of the switching device. A pixel electrode electrically connected to the switching device through the contact hole is formed. Thus, an undercut between an etch-stop pattern and a resist pattern may be more easily formed without over-etching a passivation layer.

    摘要翻译： 提供一种制造显示基板的方法。 在该方法中，在基底基板上形成栅极线，与栅极线交叉的数据线以及开关元件。 在基底基板上形成钝化层，第一抗蚀剂层和第二抗蚀剂层。 图案化第一抗蚀剂层和第二抗蚀剂层以形成抗蚀剂图案和蚀刻停止图案，该蚀刻停止图案具有从抗蚀剂图案的侧壁突出的侧壁。 去除钝化层的一部分以在开关器件的漏电极上形成接触孔。 形成通过接触孔与开关装置电连接的像素电极。 因此，可以更容易地形成蚀刻停止图案和抗蚀剂图案之间的底切，而不会过度蚀刻钝化层。

    Thin film transistor array panel and manufacturing method thereof
    35.
    发明授权
    Thin film transistor array panel and manufacturing method thereof 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US08519393B2

    公开(公告)日：2013-08-27

    申请号：US12823043

    申请日：2010-06-24

    申请人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

    发明人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

    IPC分类号： H01L27/146 ,  H01L29/786

    CPC分类号： H01L29/66765 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

    摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.

    摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。 半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。 源电极和漏极设置在半导体的第二部分和栅极绝缘层上。

    Digital exposure method and digital exposure device for performing the method
    36.
    发明授权
    Digital exposure method and digital exposure device for performing the method 有权
    用于执行该方法的数字曝光方法和数字曝光装置

    公开(公告)号：US08477288B2

    公开(公告)日：2013-07-02

    申请号：US12906623

    申请日：2010-10-18

    申请人： Sang-Hyun Yun ,  Hi-Kuk Lee ,  Sang-Woo Bae ,  Cha-Dong Kim ,  Jung-In Park

    发明人： Sang-Hyun Yun ,  Hi-Kuk Lee ,  Sang-Woo Bae ,  Cha-Dong Kim ,  Jung-In Park

    IPC分类号： G03B27/54 ,  G03B27/42

    CPC分类号： G03B27/526 ,  G03B27/52 ,  G03F7/70291 ,  G03F7/70508 ,  G03F7/70541

    摘要： A digital exposure method and a digital exposure device for performing the method are disclosed. In the method, a graphic data system file is produced in correspondence with each of a plurality of patterns formed on a substrate. Then, a digital micromirror device on/off data is generated from the graphic data system file. Then, the substrate is exposed in response to the digital micromirror device on/off data. Thus, at least a first exposure for forming a first pattern of a display panel, and a second exposure for forming identification numbers of a substrate and each display panel and removing an edge portion of the substrate may be simultaneously performed, to simplify the exposure process decrease costs.

    摘要翻译： 公开了一种用于执行该方法的数字曝光方法和数字曝光装置。 在该方法中，与形成在基板上的多个图案中的每一个对应地生成图形数据系统文件。 然后，从图形数据系统文件生成数字微镜装置开/关数据。 然后，响应于数字微镜装置的开/关数据曝光基板。 因此，可以同时执行用于形成显示面板的第一图案的第一曝光和用于形成基板和每个显示面板的识别号和去除基板的边缘部分的第二曝光，以简化曝光过程 降低成本

    Method of fabricating thin film transistor substrate and negative photoresist composition used therein
    37.
    发明授权
    Method of fabricating thin film transistor substrate and negative photoresist composition used therein 有权
    制造薄膜晶体管基板及其中使用的负型光致抗蚀剂组合物的方法

    公开(公告)号：US08257905B2

    公开(公告)日：2012-09-04

    申请号：US12685545

    申请日：2010-01-11

    申请人： Yeong-Beom Lee ,  Hi-Kuk Lee ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

    发明人： Yeong-Beom Lee ,  Hi-Kuk Lee ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： H01L27/1288 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/40 ,  H01L27/1214

    摘要： A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:

    摘要翻译： 提供了制造其中使用的薄膜晶体管基板和负型光致抗蚀剂组合物的方法，其可以降低图案劣化。 制造薄膜晶体管基板的方法包括在基板上形成由导电材料构成的导电膜，在导电膜上形成由负性光致抗蚀剂组合物构成的蚀刻图案，并使用该导电膜蚀刻导电膜形成导电图案 蚀刻图案作为蚀刻掩模，其中负性光致抗蚀剂组合物包含10-50重量份的包含可溶于碱显影液的羟基的酚醛清漆树脂，0.5-10重量份由 按照下式（1），将0.5-10重量份由下式（2）表示的第二光酸反应产物，1-20重量份的交联剂和10-90重量份的溶剂 ：