公开(公告)号：US08411051B2

公开(公告)日：2013-04-02

申请号：US12583154

申请日：2009-08-13

Applicant: Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan ,  Ga-Lane Chen ,  Jia-Shyong Cheng ,  Jeah-Sheng Wu

Inventor： Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan ,  Ga-Lane Chen ,  Jia-Shyong Cheng ,  Jeah-Sheng Wu

IPC: G06F3/041

CPC classification number: G06F3/0414

Abstract: A liquid crystal display screen includes an upper board, a lower board opposite to the upper board, and a liquid crystal layer located between the upper board and the lower board. The upper board includes a touch panel. The touch panel includes a plurality of transparent electrodes. At least one of the transparent electrodes includes a carbon nanotube structure.

Abstract translation: 液晶显示屏包括上板，与上板相对的下板，以及位于上板和下板之间的液晶层。 上板包括触摸面板。 触摸面板包括多个透明电极。 至少一个透明电极包括碳纳米管结构。

公开(公告)号：US20100097772A1

公开(公告)日：2010-04-22

申请号：US12589230

申请日：2009-10-19

Applicant: Po-Shan Huang ,  Jia-Shyong Cheng

Inventor： Po-Shan Huang ,  Jia-Shyong Cheng

IPC: H05K1/11

CPC classification number: H05K3/363 ,  H05K2201/09427 ,  H05K2201/09727 ,  H05K2201/10128

Abstract: A display device includes a circuit board connecting structure. The circuit board connecting structure includes a first circuit board, a soldering layer, and a second circuit board. The first circuit board includes a baseboard and a plurality of parallel elongate first electrodes defined at a predetermined area. The second circuit board includes a plurality of parallel elongate second electrodes positioned at the predetermined area. The second electrodes are electrically connected to the corresponding first electrodes via the soldering layer. A space defined by the projection of the second electrodes to the baseboard of the first circuit board is filled in by the soldering layer.

Abstract translation: 显示装置包括电路板连接结构。 电路板连接结构包括第一电路板，焊接层和第二电路板。 第一电路板包括基板和限定在预定区域的多个平行细长的第一电极。 第二电路板包括位于预定区域的多个平行细长的第二电极。 第二电极通过焊接层电连接到对应的第一电极。 通过焊接层填充由第二电极向第一电路板的基板的突起限定的空间。

公开(公告)号：US20100041297A1

公开(公告)日：2010-02-18

申请号：US12583160

申请日：2009-08-13

Applicant: Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan ,  Ga-Lane Chen ,  Jia-Shyong Cheng ,  Jeah-Sheng Wu

Inventor： Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan ,  Ga-Lane Chen ,  Jia-Shyong Cheng ,  Jeah-Sheng Wu

IPC: H01J9/20

CPC classification number: G06F3/045 ,  B82Y10/00 ,  B82Y20/00 ,  G02F1/1368 ,  H01L51/444 ,  Y10T428/269 ,  Y10T428/2913

Abstract: A method for making a liquid crystal display screen is provided. A touch panel including at least one carbon nanotube structure layer is prepared. A first polarizer is applied on a surface of the touch panel. A thin film transistor panel including a number of thin film transistors is prepared. A liquid crystal layer is placed between the first polarizer and the thin film transistors.

Abstract translation: 提供了一种制造液晶显示屏的方法。 制备包括至少一个碳纳米管结构层的触摸面板。 第一偏振器被施加在触摸面板的表面上。 制备包括多个薄膜晶体管的薄膜晶体管面板。 液晶层位于第一偏振片和薄膜晶体管之间。

公开(公告)号：US20090027317A1

公开(公告)日：2009-01-29

申请号：US12220525

申请日：2008-07-25

Applicant: Jia-Shyong Cheng ,  Shing-Shiang Chang ,  Chih-Han Chao

Inventor： Jia-Shyong Cheng ,  Shing-Shiang Chang ,  Chih-Han Chao

IPC: G09G3/34

CPC classification number: G09G3/3433 ,  G02B26/005 ,  G09G3/348 ,  G09G2300/08

Abstract: An exemplary electro-wetting display (EWD) device includes an upper substrate, a lower substrate opposite to the upper substrate, a plurality of side walls interposed between the upper and lower substrates and cooperating with the upper and lower substrates to form a plurality of pixel units, a first polar liquid disposed in the pixel units, a second, colored, non-polar liquid disposed in the pixel units and being immiscible with the first liquid, and a plurality of scanning lines disposed on the lower substrate and parallel to and spaced apart from each other for providing scanning signals to the pixel units. Each of the pixel units corresponds to at least part of a corresponding previous scanning line.

Abstract translation: 示例性电润湿显示器（EWD）装置包括上基板，与上基板相对的下基板，插入在上基板和下基板之间的多个侧壁，并与上基板和下基板配合以形成多个像素 单元，设置在像素单元中的第一极性液体，设置在像素单元中并与第一液体不混溶的第二有色非极性液体，以及设置在下基板上并平行并间隔开的多个扫描线 彼此之间用于向像素单元提供扫描信号。 每个像素单元对应于对应的先前扫描线的至少一部分。

公开(公告)号：US06721026B2

公开(公告)日：2004-04-13

申请号：US09846462

申请日：2001-05-01

Applicant: Jia-Shyong Cheng ,  Tean-Sen Jen

Inventor： Jia-Shyong Cheng ,  Tean-Sen Jen

IPC: G02F11333

CPC classification number: G02F1/134363

Abstract: A process for forming an in-plane switching mode liquid crystal display (IPS-LCD), which defines pixel portions of the common and data electrodes by the same photo-masking and lithography procedure, is disclosed. Accordingly, the misalignment can be avoid. An in-plane switching mode liquid crystal display (IPS-LCD) is also disclosed. The IPS-LCD includes a storage capacitor consisting of storage-capacitor portions of the common and data electrode structures, which is disposed outside the pixel region so as to enhance the aperture ratio of the pixel region.

Abstract translation: 公开了通过相同的光掩模和光刻工艺来形成公共和数据电极的像素部分来形成平面内切换模式液晶显示器（IPS-LCD）的工艺。 因此，可以避免不对准。 还公开了一种面内切换模式液晶显示器（IPS-LCD）。 IPS-LCD包括由公共数据电极结构的存储电容器部分组成的存储电容器，其设置在像素区域的外部，以增强像素区域的开口率。

公开(公告)号：US06642973B2

公开(公告)日：2003-11-04

申请号：US09935101

申请日：2001-08-22

Applicant: Jia-Shyong Cheng ,  Shing-Shiang Chang

Inventor： Jia-Shyong Cheng ,  Shing-Shiang Chang

IPC: G02F11368

CPC classification number: G02F1/136259 ,  G02F1/136209 ,  G02F2001/136263

Abstract: A repair structure for repairing data lines and scan lines comprised in a thin film transistor-liquid crystal display (TFT-LCD) is provided. The repair structure includes a first conducting repair structure formed simultaneously with a gate conducting structure of the thin film transistor-liquid crystal display, an insulating layer formed on the first conducting repair structure, and a second conducting repair structure formed on the insulating layer simultaneously with a data conducting structure of the thin film transistor-liquid crystal display and connected with the data conducting structure, wherein a plurality of overlap regions having the insulating layer between the fist conducting repair structure and the second conducting repair structure are formed, wherein when the data conducting structure positioned in the overlap regions is broken, the insulating layer in the overlap regions is destroyed to make electric connection between the first conducting repair structure and the second conducting repair structure.

公开(公告)号：US06403418B2

公开(公告)日：2002-06-11

申请号：US09551535

申请日：2000-04-18

Applicant: Shiou-Yu Wang ,  Jia-Shyong Cheng ,  Tean-Sen Jen ,  Ming-Teng Hsieh

Inventor： Shiou-Yu Wang ,  Jia-Shyong Cheng ,  Tean-Sen Jen ,  Ming-Teng Hsieh

IPC: H01L218242

CPC classification number: H01L28/91 ,  H01L21/3143 ,  H01L21/31604 ,  H01L27/10855

Abstract: A method of fabricating cup shape cylindrical capacitor of high density Dynamic Random Access Memory (DRAM) cells is disclosed. The cup shape capacitor shape is achieved by first depositing a first polysilicon layer on a silicon substrate; a third dielectric layer is then formed overlaying the first polysilicon layer, and defined third dielectric crowns by the conventional lithography and etching techniques; a second polysilicon layer is deposited overlaying the third dielectric crowns and first polysilicon layer; the first polysilicon and second polysilicon layers are then vertically anisotropically etchback to define storage nodes of the cylindrical capacitors; the third dielectric crowns are removed; finally, the capacitor dielectric layer and the polysilicon top plate of the capacitor are formed to complete the cup shape cylindrical capacitor formation for high density DRAM applications.

Abstract translation: 公开了一种制造高密度动态随机存取存储器（DRAM）单元的杯形圆柱形电容器的方法。 杯状电容器形状通过首先在硅衬底上沉积第一多晶硅层来实现; 然后通过常规的光刻和蚀刻技术形成覆盖第一多晶硅层和限定的第三介电冠的第三介电层; 沉积覆盖第三介电冠和第一多晶硅层的第二多晶硅层; 然后第一多晶硅和第二多晶硅层垂直各向异性回蚀以限定圆柱形电容器的存储节点; 去除第三介质冠; 最后，电容器的电容器电介质层和多晶硅顶板形成为完成用于高密度DRAM应用的杯形圆柱形电容器形成。

公开(公告)号：US06387740B1

公开(公告)日：2002-05-14

申请号：US09627142

申请日：2000-07-24

Applicant: Tean-Sen Jen ,  Jia-Shyong Cheng

Inventor： Tean-Sen Jen ,  Jia-Shyong Cheng

IPC: H01L2100

CPC classification number: H01L27/1288 ,  G02F1/136227 ,  G02F2001/136231 ,  H01L27/1214

Abstract: A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By using a backside exposure technique, the masking step for patterning an etch stopper layer can be omitted. After forming an active region including a gate electrode and a scan line on the front side of a substrate, and sequentially applying an etch stopper layer and a photoresist layer over the resulting structure, the backside exposure is performed by exposing from the back side of the substrate. A portion of photoresist is shielded by the active region from exposure so that an etch stopper structure having a shape similar to the shape of the active region is formed without any photo-masking and lithographic procedure. Therefore, the above self-aligned effect allows one masking step to be reduced so as to simplify the process.

Abstract translation: 公开了用于形成用于液晶显示器的薄膜晶体管矩阵的简化三层工艺。 通过使用背面曝光技术，可以省略用于图案化蚀刻停止层的掩模步骤。 在衬底的前侧形成包括栅电极和扫描线的有源区，并在所得结构上依次施加蚀刻停止层和光致抗蚀剂层，通过从背面曝光 基质。 一部分光致抗蚀剂被有源区域遮蔽而不被曝光，从而形成具有类似于有源区形状的蚀刻停止结构，而没有任何光掩模和光刻工艺。 因此，上述自对准效果允许减少一个掩模步骤，从而简化处理。

公开(公告)号：US06337173B2

公开(公告)日：2002-01-08

申请号：US09208452

申请日：1998-12-10

Applicant: Tean-Sen Jen ,  Shiou-Yu Wang ,  Jia-Shyong Cheng

Inventor： Tean-Sen Jen ,  Shiou-Yu Wang ,  Jia-Shyong Cheng

IPC: G03F726

CPC classification number: H01L28/92 ,  H01L21/76213 ,  H01L27/10852

Abstract: A method for fabricating a capacitor electrode on a semiconductor substrate includes the steps of: forming a conducting layer over the semiconductor substrate; forming a photoresist layer over the conducting layer; pattering the photoresist layer through an interfering exposure step; and pattering the conducting layer using the patterned photoresist layer as a mask, thereby forming a capacitor electrode.

Abstract translation: 一种在半导体衬底上制造电容器电极的方法包括以下步骤：在半导体衬底上形成导电层; 在所述导电层上形成光致抗蚀剂层; 通过干涉曝光步骤图案化光致抗蚀剂层; 并使用图案化的光致抗蚀剂层作为掩模图案化导电层，从而形成电容器电极。

公开(公告)号：US5923989A

公开(公告)日：1999-07-13

申请号：US81598

申请日：1998-05-20

Applicant: Shian-Jyh Lin ,  Tsu-An Lin ,  Wen-Chieh Chang ,  Shiou-Yu Wang ,  Tean-Sen Jen ,  Hui-Jen Yang ,  Jia-Shyong Cheng ,  Ming-Teng Hsieh

Inventor： Shian-Jyh Lin ,  Tsu-An Lin ,  Wen-Chieh Chang ,  Shiou-Yu Wang ,  Tean-Sen Jen ,  Hui-Jen Yang ,  Jia-Shyong Cheng ,  Ming-Teng Hsieh

IPC: H01L21/02 ,  H01L21/8242

CPC classification number: H01L27/10852 ,  H01L28/84

Abstract: A method of fabricating a rugged capacitor structure of high density Dynamic Random Access Memory (DRAM) cells is disclosed. First, MOSFETs, wordlines and bitlines are formed on a semiconductor silicon substrate. Next, a dielectric layer and a doped polysilicon layer are sequentially deposited over the entire silicon substrate. The dielectric layer and doped polysilicon layer are then partially etched to open source contact windows. Then, a polysilicon layer is deposited overlaying the doped polysilicon layer and filling into the source contact windows. Next, the polysilicon layer and doped polysilicon layers are partially etched to define bottom electrodes of the capacitors. Next, tilt angle implantation is performed to implant impurities into top surface and four sidewalls of the polysilicon layer and doped polysilicon layer. Next, a rugged polysilicon layer is deposited overlaying the polysilicon, doped polysilicon and third dielectric layers. Next, the polysilicon layer is anisotropically etched by using the rugged polysilicon layer as an etching mask to transfer rugged surface profile from the rugged polysilicon layer to the polysilicon layer. Finally, an interelectrode dielectric layer and a third polysilicon layer as top electrodes of the capacitors are sequentially formed to complete the rugged capacitor for high density DRAM applications.

Abstract translation: 公开了一种制造高密度动态随机存取存储器（DRAM）单元的坚固电容器结构的方法。 首先，在半导体硅衬底上形成MOSFET，字线和位线。 接下来，在整个硅衬底上依次沉积介电层和掺杂多晶硅层。 然后将电介质层和掺杂多晶硅层部分地蚀刻到开源接触窗口。 然后，沉积覆盖掺杂多晶硅层并填充到源极接触窗口中的多晶硅层。 接下来，部分蚀刻多晶硅层和掺杂多晶硅层以限定电容器的底部电极。 接下来，进行倾斜角注入以将杂质植入多晶硅层的顶表面和四个侧壁以及掺杂多晶硅层。 接下来，沉积覆盖多晶硅，掺杂多晶硅和第三介电层的坚固的多晶硅层。 接下来，通过使用坚固的多晶硅层作为蚀刻掩模来将多晶硅层各向异性地蚀刻，以将粗糙的表面轮廓从坚固的多晶硅层转移到多晶硅层。 最后，依次形成作为电容器顶电极的电极间电介质层和第三多晶硅层，以完成用于高密度DRAM应用的坚固电容器。