摘要:
A semiconductor nonvolatile memory device capable of lowering an operation voltage such as an erase voltage and capable of lowering costs and a method of production of the same, wherein a thin film transistor acting as the memory transistor is formed with a semiconductor layer 31b having a channel formation region formed on an insulating substrate 10 made of glass or plastic, a charge storing layer 32a formed on the semiconductor layer, a control gate 33a formed above the charge storing layer, and source and drain regions formed connected to the channel formation region.
摘要:
A method of forming a polycrystalline silicon thin film includes irradiating an amorphous silicon layer with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J. The laser device includes an homogenizer movably mounted at the end of the optical path of the laser beam.
摘要翻译:形成多晶硅薄膜的方法包括用准分子激光能量密度为100mJ / cm 2至500mJ / cm 2,优选280mJ / cm 2至330mJ / cm 2的激光照射非晶硅层,脉冲宽度 80ns至200ns,优选140ns至200ns,以便直接退火非晶硅层并形成多晶硅薄膜。 用于照射准分子激光的激光的总能量为至少5J,优选为至少10J。激光装置包括可移动地安装在激光束的光路端部的均质器。
摘要:
A thin-film semiconductor crystal is formed by depositing a thin film of amorphous silicon on a substrate, introducing ions selectively into a predetermined region of the thin film of amorphous silicon, and growing a single semiconductor crystal in the thin film of amorphous silicon by way of solid-phase crystal growth. A semiconductor device which employs the thin-film semiconductor crystal has a channel in the region where the ions are selectively introduced.
摘要:
When a thin film transistor is formed by forming a polycrystalline silicon thin film of a large grain size, the uniformity of film quality within an active region can be improved more reliably, whereby a carrier mobility of a transistor can be suppressed from being fluctuated. Therefore, the thin film transistor can be enhanced in efficiency. There is provided a method of making a thin film transistor in which a dot-shaped core from which crystal is to be grown is produced on an amorphous silicon thin film at its predetermined location and solid phase growth is performed to grow crystal to thereby form a silicon thin film. The core from which crystal is to be grown is produced on the thin film transistor at its portion near the outside of a region in which an active region is formed.
摘要:
A control system for adjusting an antenna rotatably mounted on a vehicle to directly receive a transmitting signal from a geostationary satellite so as to apply it to a receiving equipment on the vehicle. The control system comprises a first sensor for sensing a first difference between a standard direction and a travelling direction of the vehicle, a second sensor for sensing a second difference between the travelling direction of the vehicle and a direction of the antenna, a microcomputer programmed to determine a third difference between the travelling direction of the vehicle and a direction of the satellite in accordance with the first difference on a basis of a predetermined difference between the standard direction and the direction of the satellite and to determine an adjustment angle for rotation of the antenna in accordance with the second and third differences, and an actuator for effecting for rotation of the antenna with the adjustment angle.
摘要:
A mechanism for attaching to a laminated plastic sheet a fastener profile wherein the preformed sheet is removed from a roll and passed through a heating chamber having controlled humidity and thereafter passing said sheet over a roll which forms a joining zone with an extruded plastic profile strip fed onto the sheet with a jet of air directed thereagainst, and the joined sheet and strip thereafter passing through a chamber where the strip is cooled and the heat in the sheet is maintained.
摘要:
A farmland management system includes an information detection unit configured to acquire information relating to a crop being cultivated, a storage unit configured to store crop registration information for estimating a growth condition of the crop, a growth estimation unit configured to refer to the crop registration information and estimate the growth condition of the crop based on the information relating to the crop and the crop registration information, and a display unit configured to display the growth condition estimated by the growth estimation unit.
摘要:
An engineering device includes a template producing unit that produces a template that defines monitoring point information and control point information as information for an object that is an equipment subject to monitoring/control, a system defining unit that defines system information for each equipment of a facility that is subject to monitoring/control, a physical entity deploying unit that produces monitoring point information and control point information for each individual equipment by deploying the template, for each individual equipment within the facility, following the system information, and a modification processing unit that regenerates the monitoring point information and control point information for each individual equipment, by deploying, to each individual equipment within the facility, a post-modification template, following the system information, when a modification has been made to the template.
摘要:
A discharge lamp configured to suppress temperature increases in the electrode on the opening part side of a reflective mirror is described. The discharge lamp includes an F electrode and an R electrode having shapes before forming the melt electrodes that satisfy at least one of the following conditions (a) to (c): (a) The diameter of the core wire of the F electrode is d1f, and the diameter of the core wire of the R electrode is d1r, then d1f>1.2×d1r; (b) The wire diameter of the coil of said F electrode is d2f, and the wire diameter of the coil of the R electrode is d2r, then d2f>1.2×d2r; (c) the number of windings of the coil of the F electrode is nf, and the number of windings of the coil of the R electrode is nr, then nf>1.2×nr.