公开(公告)号：US08940128B2

公开(公告)日：2015-01-27

申请号：US12853427

申请日：2010-08-10

申请人： Yusaku Sakka ,  Ryoji Nishio ,  Ken Yoshioka

发明人： Yusaku Sakka ,  Ryoji Nishio ,  Ken Yoshioka

IPC分类号： C23C16/505 ,  H01J37/32 ,  C23C16/507 ,  H05H1/46 ,  H05H1/36

CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32651 ,  H05H2001/463

摘要： The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.

摘要翻译： 本发明旨在抑制在真空处理室的内壁表面产生的自偏压，从而抑制真空处理室的内壁表面的碎裂或真空处理室的内部部分的消耗。 本发明提供一种等离子体处理装置，其包括真空处理室，密封真空处理室的上部的真空处理室盖，感应天线，设置在感应天线和真空处理室盖之间的法拉第屏蔽，以及 用于向感应天线提供高频电力的高频电源，其中感应天线被分成两部分或更多部分，法拉第屏蔽被分成对应于感应天线的分割数的分频数，高频电压是 通过匹配盒从一个高频电源施加到其上。

公开(公告)号：US09039865B2

公开(公告)日：2015-05-26

申请号：US12694363

申请日：2010-01-27

申请人： Ken Yoshioka ,  Motohiko Yoshigai ,  Ryoji Nishio ,  Tadayoshi Kawaguchi

发明人： Ken Yoshioka ,  Motohiko Yoshigai ,  Ryoji Nishio ,  Tadayoshi Kawaguchi

IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32

CPC分类号： H01J37/32623 ,  H01J37/321 ,  H01J37/3211

摘要： The invention provides a plasma processing apparatus in which ring-like conductors 8a and 8b are arranged closed to and along an induction antenna 1 composed of an inner circumference coil 1a and an outer circumference coil 1b. Ring-like conductors 8a and 8b are each characterized in that the radius from the center of the apparatus and the cross-sectional shape of the conductor body varies along the circumferential angle of the coils. Since the mutual inductances between the ring-like conductors 8a and 8b and the induction antenna 1 and between the ring-like conductors 8a and 8b and the plasma along the circumferential position are controlled, it becomes possible to compensate for the coil currents varied along the circumference of the coils of the induction antenna 1, and to improve the non-uniformity in the circumferential direction of the current in the generated plasma.

摘要翻译： 本发明提供一种等离子体处理装置，其中环状导体8a和8b布置在由内周线圈1a和外周线圈1b构成的感应天线1的附近。 环形导体8a和8b的特征在于，从设备中心的半径和导体主体的横截面形状沿线圈的圆周角度变化。 由于控制环状导体8a，8b与感应天线1之间以及环状导体8a，8b与周边位置之间的等离子体之间的互感，因此能够补偿沿着 感应天线1的线圈的周长，并且提高所产生的等离子体中的电流的圆周方向的不均匀性。

公开(公告)号：US20110297320A1

公开(公告)日：2011-12-08

申请号：US12853427

申请日：2010-08-10

申请人： Yusaku Sakka ,  Ryoji Nishio ,  Ken Yoshioka

发明人： Yusaku Sakka ,  Ryoji Nishio ,  Ken Yoshioka

IPC分类号： H01L21/3065

CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32651 ,  H05H2001/463

摘要： The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.

摘要翻译： 本发明旨在抑制在真空处理室的内壁表面产生的自偏压，从而抑制真空处理室的内壁表面的碎裂或真空处理室的内部部分的消耗。 本发明提供一种等离子体处理装置，其包括真空处理室，密封真空处理室的上部的真空处理室盖，感应天线，设置在感应天线和真空处理室盖之间的法拉第屏蔽，以及 用于向感应天线提供高频电力的高频电源，其中感应天线被分成两部分或更多部分，法拉第屏蔽被分成对应于感应天线的分割数的分频数，高频电压是 通过匹配盒从一个高频电源施加到其上。

公开(公告)号：US06835665B2

公开(公告)日：2004-12-28

申请号：US10090761

申请日：2002-03-06

申请人： Nobuyuki Mise ,  Ken Yoshioka ,  Ryoji Nishio ,  Tatehito Usui

发明人： Nobuyuki Mise ,  Ken Yoshioka ,  Ryoji Nishio ,  Tatehito Usui

IPC分类号： H01L21302

CPC分类号： H01L21/31144 ,  C23F4/00 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L21/32139 ,  H01L28/65 ,  H01L43/12

摘要： A film of hardly-etched material formed on a substrate is etched using a mask formed on the film of hardly-etched material and a plasma, wherein the film of hardly-etched material is etched using the mask formed with a side wall angled at 90 degrees or less with respect to the surface of the substrate, thereby forming the etched film with a taper angle to the surface of the substrate equal to or larger than the taper angle of the mask.

摘要翻译： 使用形成在难蚀刻材料和等离子体的膜上的掩模蚀刻在基板上形成的几乎蚀刻的材料的膜，其中使用形成有角度为90°的侧壁的掩模蚀刻难蚀刻材料的膜 度以下，由此形成与基板的表面成锥角的蚀刻膜等于或大于掩模的锥角。

公开(公告)号：US20110108194A1

公开(公告)日：2011-05-12

申请号：US12694363

申请日：2010-01-27

申请人： Ken YOSHIOKA ,  Motohiko Yoshigai ,  Ryoji Nishio ,  Tadayoshi Kawaguchi

发明人： Ken YOSHIOKA ,  Motohiko Yoshigai ,  Ryoji Nishio ,  Tadayoshi Kawaguchi

IPC分类号： C23F1/08 ,  C23C16/00

CPC分类号： H01J37/32623 ,  H01J37/321 ,  H01J37/3211

摘要： The invention provides a plasma processing apparatus in which ring-like conductors 8a and 8b are arranged closed to and along an induction antenna 1 composed of an inner circumference coil 1a and an outer circumference coil 1b. Ring-like conductors 8a and 8b are each characterized in that the radius from the center of the apparatus and the cross-sectional shape of the conductor body varies along the circumferential angle of the coils. Since the mutual inductances between the ring-like conductors 8a and 8b and the induction antenna 1 and between the ring-like conductors 8a and 8b and the plasma along the circumferential position are controlled, it becomes possible to compensate for the coil currents varied along the circumference of the coils of the induction antenna 1, and to improve the non-uniformity in the circumferential direction of the current in the generated plasma.

摘要翻译： 本发明提供一种等离子体处理装置，其中环状导体8a和8b布置在由内周线圈1a和外周线圈1b构成的感应天线1的附近。 环形导体8a和8b的特征在于，从设备中心的半径和导体主体的横截面形状沿线圈的圆周角度变化。 由于控制环状导体8a，8b与感应天线1之间以及环状导体8a，8b与周边位置之间的等离子体之间的互感，因此能够补偿沿着 感应天线1的线圈的周长，并且提高所产生的等离子体中的电流的圆周方向的不均匀性。

公开(公告)号：US20110132540A1

公开(公告)日：2011-06-09

申请号：US12712795

申请日：2010-02-25

申请人： Yusaku SAKKA ,  Ken Yoshioka ,  Ryoji Nishio

发明人： Yusaku SAKKA ,  Ken Yoshioka ,  Ryoji Nishio

IPC分类号： C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/321

摘要： A plasma processing apparatus is disclosed in which a wafer mounted on a sample stage arranged in a processing chamber in a vacuum vessel is processed using a plasma formed in the processing chamber. A dielectric bell jar makes up the upper part of the vacuum vessel and surrounds processing chamber. A coil-shaped antenna wound on the outer periphery of the bell jar is supplied with the high-frequency power to form the plasma. A Faraday shield of a conductive material is formed of double layers including inner and outer layers arranged in spaced relation to each other between the antenna and the bell jar, each layer having a plurality of slits and set at a predetermined potential. The slits of the inner and outer layers of the Faraday shield are arranged in staggered fashion.

摘要翻译： 公开了一种等离子体处理装置，其中使用在处理室中形成的等离子体来处理安装在设置在真空容器中的处理室中的样品台上的晶片。 电介质钟罩组成真空容器的上部，并围绕处理室。 缠绕在钟罩外周的线圈状天线被供给高频电力以形成等离子体。 导电材料的法拉第屏蔽由双层形成，包括在天线和钟罩之间彼此间隔布置的内层和外层，每层具有多个狭缝并设定在预定电位。 法拉第屏蔽层的内层和外层的狭缝以交错的方式布置。

公开(公告)号：US08425786B2

公开(公告)日：2013-04-23

申请号：US12700903

申请日：2010-02-05

申请人： Makoto Satake ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Tsutomu Tetsuka ,  Tatehito Usui ,  Ryoji Nishio

发明人： Makoto Satake ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Tsutomu Tetsuka ,  Tatehito Usui ,  Ryoji Nishio

IPC分类号： B44C1/22 ,  C25F3/00

CPC分类号： G11B5/84 ,  C23F4/00 ,  H01F10/14 ,  H01F10/16 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01L43/12

摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.

摘要翻译： 在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属， 用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时 功率高，当天线功率低时，含有C和O的气体进入真空电抗器。

公开(公告)号：US20120267050A1

公开(公告)日：2012-10-25

申请号：US13190654

申请日：2011-07-26

申请人： Yusaku SAKKA ,  Ryoji Nishio ,  Tadayoshi Kawaguchi

发明人： Yusaku SAKKA ,  Ryoji Nishio ,  Tadayoshi Kawaguchi

IPC分类号： H01L21/3065

CPC分类号： H01J37/32119 ,  H01J37/321 ,  H01J37/3211

摘要： A uniform plasma processing to a sample is performed by adjusting the distribution of the induced magnetic field in an inductively-coupled-plasma processing apparatus and correcting the plasma distribution on the sample. Between an induction coil and a dielectric window a conductor is provided along the induction coil and side by side with at least a part of the induction coil in its circumferential direction. The conductor is set up at a location where the intensity of the induced magnetic field generated from the induction coil is wished to be weakened and the relationship of Lp≧Lr is satisfied, letting the shortest distance from the induction coil to the surface of the conductor be Lr and letting the shortest distance from the induction coil to the plasma generated directly under the dielectric window be Lp.

摘要翻译： 通过调整感应耦合等离子体处理装置中的感应磁场的分布并校正样品上的等离子体分布来对样品进行均匀的等离子体处理。 在感应线圈和电介质窗口之间，沿感应线圈设置有导体，与感应线圈的周向的至少一部分并排配置。 将导体设置在感应线圈产生的感应磁场的强度要弱的位置，并且满足Lp≥Lr的关系的位置，使从感应线圈到导体表面的最短距离 使Lr和从电感窗口直接产生的从感应线圈到等离子体的最短距离为Lp。

公开(公告)号：US07892444B2

公开(公告)日：2011-02-22

申请号：US11696263

申请日：2007-04-04

申请人： Ryoji Nishio

发明人： Ryoji Nishio

IPC分类号： G01L21/30 ,  G01R31/00

CPC分类号： H01J37/32165 ,  C23F4/00 ,  H01J37/32082

摘要： A method for controlling a plasma processing apparatus which includes a vacuum vessel, a first, second and third RF power supply, a first and second electrode, and a phase control unit for controlling a phase difference between a second RF voltage from the second RF power supply and a third RF voltage from the third RF power supply. The controlling method includes the steps of supplying a predetermined power from the first RF power supply to ignite plasma, after confirming ignition of plasma, supplying a predetermined power respectively from the second RF power supply and the third RF power supply, and when starting power supply from the second RF power supply and the third RF power supply, fixing the phase to a predetermined phase angle using a preset mode without carrying out phase control, and after a matching operation has stabilized, starting the phase control.

摘要翻译： 一种用于控制等离子体处理装置的方法，其包括真空容器，第一，第二和第三RF电源，第一和第二电极以及相位控制单元，用于控制来自第二RF功率的第二RF电压之间的相位差 电源和第三RF电源的第三RF电压。 该控制方法包括以下步骤：在确认等离子体的点火之后，分别从第二RF电源和第三RF电源提供预定功率，以及当启动电源时，从第一RF电源提供预定功率以点燃等离子体 从第二RF电源和第三RF电源，使用预设模式将相位固定为预定相位角，而不执行相位控制，并且在匹配操作已经稳定之后，开始相位控制。

公开(公告)号：US20070232085A1

公开(公告)日：2007-10-04

申请号：US11802955

申请日：2007-05-29

申请人： Ryoji Nishio ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

发明人： Ryoji Nishio ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

IPC分类号： H01L21/00

CPC分类号： G06F17/5081 ,  G06F17/5086 ,  H01J37/32082 ,  H01J37/32642 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/6875

摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.

摘要翻译： 本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。