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277 条记录 (耗时 0.03 秒)

    Charged-particle beam exposure system and method
    31.
    发明授权
    Charged-particle beam exposure system and method 失效
    带电粒子束曝光系统及方法

    公开(公告)号：US6064807A

    公开(公告)日：2000-05-16

    申请号：US653121

    申请日：1996-05-24

    申请人： Soichiro Arai ,  Junichi Kai ,  Hiroshi Yasuda ,  Shunsuke Hueki ,  Yoshihisa Oae

    发明人： Soichiro Arai ,  Junichi Kai ,  Hiroshi Yasuda ,  Shunsuke Hueki ,  Yoshihisa Oae

    IPC分类号： G21K5/04 ,  G06F17/10 ,  G21C5/00 ,  H01L21/027

    CPC分类号： H01J37/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/153 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/0435 ,  H01J2237/1532 ,  H01J2237/1534 ,  H01J2237/20221

    摘要： The present invention relates to an exposure method of a multi-beam type in which a stage mounting a sample to be exposed is continuously moved in a first direction, and charged-particle beams are controlled so as to form a desired beam shape as a whole, and in which a pattern is formed on the sample by deflecting the charged-particle beams by a main deflector and a sub deflector. Patterns to be drawn are divided into pattern data on a cell stripe basis which corresponds to an area which can be exposed when the sub deflector scans the charged-particle beams one time. The pattern data on the cell stripe basis is stored into a memory. Then, position data indicative of cell stripes is stored, in an exposure sequence, together with address information concerning the memory in which the pattern data is stored. The deflection amount data relating to the main deflector and the sub deflector is calculated from the position data. Patterns are drawn on the wafer by using the pattern data and the deflection amount data.

    摘要翻译： 本发明涉及一种多光束类型的曝光方法，其中安装要暴露的样品的载物台在第一方向上连续移动，并且带电粒子束被整体地形成期望的波束形状 ，并且其中通过由主偏转器和副偏转器偏转带电粒子束而在样品上形成图案。 要绘制的图案被划分为细胞条纹基础上的图形数据，其对应于当次偏转器一次扫描带电粒子束时可以暴露的区域。 基于单元条带的图案数据被存储到存储器中。 然后，指示单元条纹的位置数据与曝光图案数据的存储器的地址信息一起被存储在曝光序列中。 根据位置数据计算与主偏转器和副偏转器有关的偏转量数据。 通过使用图案数据和偏转量数据在晶片上绘制图案。

    Charged-particle beam exposure method
    34.
    发明授权
    Charged-particle beam exposure method 失效
    带电粒子束曝光方法

    公开(公告)号：US5399872A

    公开(公告)日：1995-03-21

    申请号：US138219

    申请日：1993-10-20

    申请人： Hiroshi Yasuda ,  Junichi Kai ,  Hisayasu Nishino ,  Soichiro Arai ,  Yoshihisa Oae

    发明人： Hiroshi Yasuda ,  Junichi Kai ,  Hisayasu Nishino ,  Soichiro Arai ,  Yoshihisa Oae

    IPC分类号： G03F7/20 ,  H01J37/04 ,  H01J37/317 ,  H01L21/027 ,  H01J37/302

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3174 ,  H01J2237/0435 ,  H01J2237/30483 ,  H01J2237/31766

    摘要： A charged-particle beam exposure method is used for a charged-particle beam exposure apparatus equipped with a blanking aperture array plate in which columns are arranged side by side in a first direction, and each of the columns includes a plurality of blanking apertures arranged in a second direction substantially perpendicular to the first direction, a charged-particle beam being moved on a wafer in the first direction. The method includes the steps of (a) determining one of first and second axes of a pattern to be exposed to be a priority axis; (b) projecting an image of the blanking aperture array plate onto the wafer so that the priority axis is perpendicular to the second direction; and (c) deflecting the charged-particle beam so that the wafer is scanned in the direction of the priority axis.

    摘要翻译： 带电粒子束曝光方法被用于装有消隐孔阵列板的带电粒子束曝光装置，其中柱沿第一方向并排布置，并且每个列包括多个排列孔 基本上垂直于第一方向的第二方向，带电粒子束在第一方向上在晶片上移动。 该方法包括以下步骤：（a）确定要暴露为优先轴的图案的第一和第二轴之一; （b）将消隐孔阵列板的图像投影到晶片上，使得优先轴线垂直于第二方向; 和（c）使带电粒子束偏转，使得晶片沿着优先权轴的方向被扫描。

    Electron beam exposure system having an electromagnetic deflector configured for efficient cooling
    36.
    发明授权
    Electron beam exposure system having an electromagnetic deflector configured for efficient cooling 失效
    具有电磁偏转器的电子束曝光系统被配置为有效地冷却

    公开(公告)号：US5264706A

    公开(公告)日：1993-11-23

    申请号：US874138

    申请日：1992-04-27

    申请人： Yoshihisa Oae ,  Akio Yamada ,  Hiroshi Yasuda

    发明人： Yoshihisa Oae ,  Akio Yamada ,  Hiroshi Yasuda

    IPC分类号： H01J37/147 ,  H01J3/32

    CPC分类号： H01J37/1471 ,  H01J2237/002 ,  H01J2237/152 ,  H01J2237/3175

    摘要： An electron beam exposure system comprises a beam source for producing and directing an electron beam along an optical axis, an evacuated column for accommodating the beam source and extending along the optical axis, an electron lens for focusing the electron beam on a substrate; and an electromagnetic deflector supplied with a control signal for deflecting the electron beam in response to the control signal. The electromagnetic deflector comprises an inner sleeve surrounding the evacuated column, first and second mutually separate windings provided on an outer surface of the inner sleeve in opposed relationship with respect to each other across the optical axis, an outer sleeve surrounding the inner sleeve with a separation therebetween defining a passageway for the flow of a coolant therethrough; third and fourth, mutually separate windings provided on an inner surface of the outer sleeve in opposed relationship with respect to each other across the optical axis, an inlet for introducing the coolant into the passageway, and an outlet for exiting the coolant from the passageway.

    摘要翻译： 电子束曝光系统包括用于沿光轴产生和引导电子束的光束源，用于容纳光束源并沿光轴延伸的抽真空柱，用于将电子束聚焦在衬底上的电子透镜; 以及电磁偏转器，其被提供有用于响应于控制信号偏转电子束的控制信号。 电磁偏转器包括围绕真空柱的内套筒，第一和第二相互独立的绕组，其设置在内套筒的外表面上，相对于彼此跨越光轴的对置关系，包围内套筒的外套筒具有分离 其间限定用于冷却剂流过其的通道; 第三和第四，互相分离的绕组设置在外套筒的内表面上，相对于彼此跨越光轴的相对关系，用于将冷却剂引入通道的入口和用于从冷却剂离开通道的出口。

    Electron beam exposure system having an electrostatic deflector wherein an electrostatic charge-up is eliminated
    37.
    发明授权
    Electron beam exposure system having an electrostatic deflector wherein an electrostatic charge-up is eliminated 失效
    具有静电偏转器的电子束曝光系统，其中消除了静电充电

    公开(公告)号：US5245194A

    公开(公告)日：1993-09-14

    申请号：US872194

    申请日：1992-04-22

    申请人： Yoshihisa Oae ,  Hiroshi Yasuda

    发明人： Yoshihisa Oae ,  Hiroshi Yasuda

    IPC分类号： G03F7/20 ,  G21K5/04 ,  H01J37/147 ,  H01J37/305 ,  H01L21/30

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1477 ,  H01J2237/004 ,  H01J2237/31776

    摘要： An electron beam exposure system comprises an electron beam source for producing an electron beam, an electron lens system for focusing the electron beam on an object, and an electrostatic deflector supplied with a control signal for deflecting the electron beam in response to the control signal, wherein the electrostatic deflector comprises a sleeve extending in an axial direction and having an outer surface and a corresponding inner surface. A plurality of electrodes are provided on the outer surface of the sleeve with a separation from each other in a circumferential direction. The sleeve has a finite conductivity such that an electric current flows along the sleeve in the circumferential direction when a control voltage is applied across the plurality of electrodes.

    摘要翻译： 电子束曝光系统包括用于产生电子束的电子束源，用于将电子束聚焦在物体上的电子透镜系统和提供有用于响应于控制信号偏转电子束的控制信号的静电偏转器， 其中所述静电偏转器包括在轴向方向上延伸并具有外表面和相应的内表面的套筒。 多个电极设置在套筒的外表面上，在圆周方向上彼此分离。 套管具有有限的导电性，使得当跨越多个电极施加控制电压时，电流沿圆周方向流过套管。

    Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device
    39.
    发明授权
    Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device 失效
    掩模和创建掩模的方法以及电子束曝光方法和电子束曝光装置

    公开(公告)号：US5952155A

    公开(公告)日：1999-09-14

    申请号：US119593

    申请日：1998-07-21

    申请人： Takayuki Sakakibara ,  Satoru Sagoh ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Hiroshi Yasuda

    发明人： Takayuki Sakakibara ,  Satoru Sagoh ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Hiroshi Yasuda

    IPC分类号： G03F1/20 ,  H01J37/317 ,  G03F9/00 ,  A61N5/00 ,  G03C5/00 ,  G21K5/10

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31788

    摘要： A device exposing an object to an electron beam employs a mask formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has a respective single aperture or respective plural, spaced apertures formed therein and having a total area size selected to be smaller than the area size of the aperture defining region, in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.

    摘要翻译： 将物体暴露于电子束的装置使用由阻挡电子束的材料板形成的掩模，并且其中限定有多个图案曝光块，每个在其中具有一个或多个孔限定区域，并且当被选择时，确定成形 的电子束通过其中以使物体上的相应图案曝光。 根据控制电子束通过的电流水平，每个孔限定区域具有形成在其中的相应的单个孔或相应的多个间隔开的孔，并且其总面积尺寸被选择为小于孔限定区域的面积尺寸 同时减少通过孔的电子束或图案曝光块的每个孔限定部分的孔的库仑相互作用。