摘要:
A novel thermally curable silicone rubber composition which is useful for the preparation of silicone rubber elastomers comprises diorganopoly-siloxane gum, a polyurethane elastomer having a softening point of not lower than 100.degree. C., a reinforcing filler, and an organic peroxide. The silicone rubber elastomers cured have an excellent resistance to mineral oils and organic solvents as well as other properties that are inherent in conventional silicone rubbers.
摘要:
Mercapto group-containing silicone rubber compositions essentially consisting of a mercapto group-containing organopolysiloxane having a viscosity exceeding 100,000 cSt and represented by the average unit formulaR.sub.a SiO.sub.(4-a/2)in which R is a monovalent hydrocarbon group substantially free from aliphatic unsaturation, at least two of the R groups in a molecule being mercaptoalkyl groups and a is between 1.98 and 2.05, a certain filler and sulfur, a metal oxide or a metal peroxide as a curing agent. Products from the composition have excellent chemical and mechanical properties and can be bonded to an organic synthetic rubber or natural rubber as well as metals in completely cured state.
摘要:
The organopolysiloxane compositions comprising an organopolysiloxane expressed by the general formulaR.sub.a.sup.1 (R.sub.a.sup.1 A.sub.3.sub.-a SiQ--).sub.b SiA.sub.4.sub.-a.sub.-bwhere R.sup.1 is a monovalent hydrocarbon group, A is a diorganosiloxy group with a functional group at the chain end, Q is a divalent group and a and b are each 0 or 1, and an organosilane or an organopolysiloxane expressed by the general formulaY--SiR.sub.2.sup.2 --O).sub.p SiR.sub.2.sup.2 Y or ##STR1## where R.sup.2 is a monovalent hydrocarbon group, Y is a functional group and p is an integer smaller than 11. The compositions are capable of curing at room temperature into a rubber-like elastomer with a very low modulus and a high elongation as high as 1400% or more.
摘要:
Silicone rubber compositions consisting essentially of an organopolysiloxane containing in a molecule at least one linearly-linked cyclic siloxane unit and at least two alkenyl groups directly bonded to silicon atoms, an organohydrogenpolysiloxane, and a platinum catalyst. These compositions are cured to form solid elastomers which exhibit a very low permeability to water vapor, and are useful for enclosing electronic units.
摘要:
Silicone rubber compositions comprising a diorganopolysiloxane having localized vinyl group distribution, a silica filler with large specific surface area and a curing agent, e.g., an organic peroxide, the diorganopolysiloxane being prepared by the block-copolymerization of a hydroxy-endblocked diorganopolysiloxane without unsaturation and a chlorine-endblocked vinyl-containing diorganopolysiloxane by the dehydrochlorination-condensation. Cured elastomers from silicone rubber compositions have very much improved tear strength with the other properties being as good as those of the conventional silicone rubber elastomers.
摘要:
A method for growing nitride semiconductor crystals according to the present invention includes the steps of: a) forming a first metal single crystal layer on a substrate; b) forming a metal nitride single crystal layer by nitrifying the first metal single crystal layer; and c) epitaxially growing a first nitride semiconductor layer on the metal nitride single crystal layer.
摘要:
The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode; and a protective layer formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al1-x-y-zGaxInyBaN (where 0≦x, y, z≦1 and 0≦x+y+z≦1), which is transparent to light emitted from the laser diode.
摘要翻译:本发明的氮化物半导体激光器件包括:氮化物半导体激光二极管; 以及形成在所述氮化物半导体激光二极管的至少一个面上的保护层。 保护层由对激光二极管发出的光透明的Al1-x-y-zGaxInyBaN(其中0 <= x,y,z <= 1和0 <= x + y + z <= 1)制成。
摘要:
A method for growing nitride semiconductor crystals according to the present invention includes the steps of: a) forming a first metal single crystal layer on a substrate; b) forming a metal nitride single crystal layer by nitrifying the first metal single crystal layer; and c) epitaxially growing a first nitride semiconductor layer on the metal nitride single crystal layer.
摘要:
A method for cutting an ingot with a wire. The method includes the steps of moving a wire in a lengthwise direction and contacting an ingot with the moving wire. The method also includes the step of supplying an abrasive slurry containing cutting oil and abrasive particles having an average diameter of about 13 .mu.m to about 15 .mu.m to the ingot when the ingot and the wire are contacting. This results in the ingot being cut with the wire and abrasive particles.