公开(公告)号：US20090181283A1

公开(公告)日：2009-07-16

申请号：US12341116

申请日：2008-12-22

申请人： Toshiki Sato ,  Jun Hisamoto ,  Jun Suzuki ,  Yoshinori Ito ,  Shinichi Tanifuji

发明人： Toshiki Sato ,  Jun Hisamoto ,  Jun Suzuki ,  Yoshinori Ito ,  Shinichi Tanifuji

IPC分类号： H01M2/00 ,  B05D5/12 ,  C23C16/513 ,  B05D3/04 ,  C23C14/34

CPC分类号： H01M8/008 ,  C23C14/021 ,  C23C14/022 ,  C23C14/165 ,  C23C14/545 ,  C23C14/5806 ,  H01M8/0206 ,  H01M8/0228 ,  H01M2008/1095 ,  Y02W30/86

摘要： Disclosed herein is a method for regenerating a separator for a fuel cell in which the separator is composed of a substrate of Ti or Ti alloy and a conductive film formed thereon. The method includes a step of removing the conductive film from the separator for a fuel cell and also removing part of the surface of the substrate, thereby giving a regenerated substrate, and a step of forming a regenerated conductive film on the regenerated substrate. The conductive film and the regenerated conductive film are at least one species of noble metal or alloy thereof selected from the group of noble metals consisting of Au, Pt, and Pd, or an alloy composed of at least one species selected from the group of noble metals and one species selected from the group of metals consisting of Ti, Zr, Hf, Nb, Ta, and Si.

摘要翻译： 本发明公开了一种燃料电池用隔膜的再生方法，其中隔板由Ti或Ti合金的基板和形成在其上的导电膜构成。 该方法包括从燃料电池用隔板除去导电膜的步骤，还除去基板表面的一部分，从而得到再生基板，以及在再生基板上形成再生导电膜的工序。 导电膜和再生导电膜是选自由Au，Pt和Pd组成的贵金属组的贵金属或其合金中的至少一种，或由至少一种选自贵金属 金属和选自由Ti，Zr，Hf，Nb，Ta和Si组成的金属组中的一种。

公开(公告)号：US20090153720A1

公开(公告)日：2009-06-18

申请号：US12331724

申请日：2008-12-10

申请人： Jun Suzuki ,  Yoshinobu Sato ,  Takeshi Ogawa

发明人： Jun Suzuki ,  Yoshinobu Sato ,  Takeshi Ogawa

IPC分类号： H04N5/222 ,  H04N5/232

CPC分类号： H04N5/23212 ,  G06T11/00 ,  H04N5/23293

摘要： An image pickup apparatus of the present invention comprises an image obtaining part configured to photoelectrically convert a first object image and a second object image formed by light fluxes divided by a pupil divider among light fluxes from an image pickup optical system to generate a first image and a second image, a displaying part configured to display images, and a processing part configured to cause the displaying part to display a superimposed image formed by superimposing the first and second images on each other.

摘要翻译： 本发明的图像拾取装置包括图像获取部件，被配置为对来自摄像光学系统的光束中的由光瞳分割器分割的光束形成的第一物体图像和第二物体图像进行光电转换以产生第一图像， 第二图像，被配置为显示图像的显示部分和被配置为使显示部分显示通过将第一和第二图像叠加而形成的叠加图像的处理部分。

公开(公告)号：US20080194220A1

公开(公告)日：2008-08-14

申请号：US12068525

申请日：2008-02-07

申请人： Jun Suzuki

发明人： Jun Suzuki

IPC分类号： H04B1/16 ,  H04B1/10

CPC分类号： H04B1/10

摘要： An FM receiver that is suitable for reducing a transmission bandwidth WF of a bandpass filter to remove adjacent-channel interference, and increasing WF to prevent audio distortion. A detection output signal SOUT is inputted to an HPF 122 when a reception electric field strength signal SM-DC indicates an intermediate or stronger electric field. In a weak electric field, an AC component signal SM-AC, which is extracted from an intermediate signal SIF1 prior to detection and which has fewer high-pass noise components than SOUT, is inputted to the HPF 122. A control circuit 120 detects a case as an adjacent-channel interference state when a large amount of high-pass components passes through the HPF 122, and reduces WF of an IFBPF 70 in order to remove adjacent-channel interference. When a small amount of high-pass components is transmitted, WF is increased in order to minimize audio distortion.

摘要翻译： 一种FM接收机，适于减少带通滤波器的传输带宽W SUB以消除相邻信道干扰，并增加W SUB以防止音频失真。 当接收电场强度信号S M-DC <>表示中间或更强的电场时，检测输出信号S OUT OUT被输入到HPF 122。 在弱电场中，在检测之前从中间信号S IF1＆lt; 1＆gt;提取并且具有较少的高通噪声分量的AC分量信号S M-AC＆lt; 输入到HPF 122.当大量的高通分量通过HPF 122时，控制电路120将情况检测为相邻信道干扰状态，并且减少W 为了去除相邻信道干扰，IFBPF70的 。 当发送少量的高通分量时，为了最小化音频失真，增加了W >F 。

公开(公告)号：USD569342S1

公开(公告)日：2008-05-20

申请号：US29269539

申请日：2006-12-01

申请人： Jun Suzuki

设计人： Jun Suzuki

公开(公告)号：US20080040526A1

公开(公告)日：2008-02-14

申请号：US11836357

申请日：2007-08-09

申请人： Jun Suzuki ,  Youichi Hidaka ,  Junichi Higuchi ,  Atsushi Iwata

发明人： Jun Suzuki ,  Youichi Hidaka ,  Junichi Higuchi ,  Atsushi Iwata

IPC分类号： G06F13/00

CPC分类号： G06F13/4081 ,  G06F2213/0026

摘要： A virtual PCI Express device 1600 indicates the presence of a pseudo I/O device in a PCI Express initial configuration cycle to reserve a resource space for a device anticipated to be installed in the future, and when an I/O device 1400 is inserted into an unoccupied slot 1605, a virtual PCI Express device control logic 1602 notifies a downstream PCI-PCI bridge 1504 via a hot-plugging control line 1601, and the downstream PCI-PCI bridge 1504 generates an interrupt to a CPU 1100 to notify it of insertion of the I/O device 1400 in conformance with the procedure for hot plugging defined by the PCI-SIG Standards, and configuration software 1000 invoked configures the inserted I/O device 1400.

摘要翻译： 虚拟PCI Express设备1600指示在PCI Express初始配置周期中存在伪I / O设备以为将来预期安装的设备预留资源空间，并且当将I / O设备1400插入时 未占用的时隙1605，虚拟PCI Express设备控制逻辑1602经由热插拔控制线1601通知下游PCI-PCI桥1504，并且下游PCI-PCI桥1504向CPU 1100产生中断以通知其插入 的I / O设备1400符合由PCI-SIG标准定义的热插拔程序，并且配置软件1000被调用配置所插入的I / O设备1400。

公开(公告)号：US20080026251A1

公开(公告)日：2008-01-31

申请号：US11826495

申请日：2007-07-16

申请人： Jun Suzuki ,  Kenji Yoneda ,  Seiji Matsuyama

发明人： Jun Suzuki ,  Kenji Yoneda ,  Seiji Matsuyama

IPC分类号： H01L21/31 ,  B32B9/00 ,  C23C16/00

CPC分类号： H01L21/3141 ,  C23C16/405 ,  C23C16/45504 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/31608 ,  H01L21/31645 ,  H01L21/3185

摘要： In an insulating film formation method, a cycle A in which O3 at a low flow rate is supplied onto a substrate and then O3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M≧1), and a cycle B in which O3 at a high flow rate is supplied onto the substrate and then O3 supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N≧1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.

摘要翻译： 在绝缘膜形成方法中，将其中以低流量供给O 3 N的循环A供应到基板上，然后将所提供的O 3与Hf反应， 在非平衡状态下形成氧化铪膜的衬底进行M次（M> = 1），并且以高流速将O 3 3的循环B供给到 将底物和然后使O 3在平衡状态下与Hf在基板上反应以形成氧化铪膜N次（N> = 1）。 这些绝缘膜形成循环被定义为一个顺序。 重复该顺序，直到获得所需的厚度，从而形成目标绝缘膜。

公开(公告)号：US20080023669A1

公开(公告)日：2008-01-31

申请号：US11629948

申请日：2005-06-15

申请人： Toru Imori ,  Jun Suzuki ,  Kazunori Iida

发明人： Toru Imori ,  Jun Suzuki ,  Kazunori Iida

IPC分类号： C09K3/00 ,  C08K3/08

CPC分类号： D07B1/0666 ,  C08K5/16 ,  C09D4/00 ,  C09D7/63 ,  C09D183/08 ,  C23C2222/20 ,  C08G77/26

摘要： A surface treatment agent for metal is provided which is capable of improving the strength of adhesion between metal and rubber. A metal surface treatment agent for promoting adhesion between the metal and rubber comprising a cobalt or other metal compound and a silane coupling agent having a metal-capturing functional group in the molecule, and a metal surface treatment agent for promoting adhesion between the metal and rubber comprising a silane coupling agent having in the molecule a metal-capturing functional group with a captured metal such as a cobalt. The metal-capturing functional group is preferably an amino, amide or azole group.

摘要翻译： 提供了一种能够提高金属与橡胶之间的粘合强度的金属表面处理剂。 一种金属表面处理剂，用于促进包含钴或其它金属化合物的金属和橡胶之间的粘合性和在分子中具有金属捕获官能团的硅烷偶联剂，以及金属表面处理剂，用于促进金属和橡胶之间的粘合 包括在分子中具有捕获金属如钴的金属捕获官能团的硅烷偶联剂。 金属捕获官能团优选为氨基，酰胺或唑基。

公开(公告)号：US20070278589A1

公开(公告)日：2007-12-06

申请号：US11654672

申请日：2007-01-18

申请人： Nobuyuki Tamura ,  Jun Suzuki

发明人： Nobuyuki Tamura ,  Jun Suzuki

IPC分类号： H01L31/00

CPC分类号： H01L21/823807 ,  H01L27/092 ,  H01L29/7843

摘要： A semiconductor device includes: an NMIS transistor on an NMIS region of a semiconductor substrate; a PMIS transistor on a PMIS region of the semiconductor substrate; and a stress dielectric film continuously provided on the semiconductor substrate to cover the NMIS transistor and PMIS transistor, the stress dielectric film having internal stress, wherein part of the stress dielectric film extending over the NMIS region has tensile internal stress compared to part of the stress dielectric film extending over the PMIS region.

摘要翻译： 半导体器件包括：在半导体衬底的NMIS区域上的NMIS晶体管; 在半导体衬底的PMIS区域上的PMIS晶体管; 以及在半导体衬底上连续地设置以覆盖NMIS晶体管和PMIS晶体管的应力介电膜，该应力介电膜具有内部应力，其中在NMIS区域上延伸的应力介电膜的部分具有与部分应力相比的拉伸内应力 电介质膜延伸在PMIS区域上。

公开(公告)号：US20070198763A1

公开(公告)日：2007-08-23

申请号：US11707084

申请日：2007-02-16

申请人： Jun Suzuki ,  Youichi Hidaka ,  Junichi Higuchi

发明人： Jun Suzuki ,  Youichi Hidaka ,  Junichi Higuchi

IPC分类号： G06F13/00

CPC分类号： G06F13/4022

摘要： A PCI Express switch which connects a plurality of peripheral devices to an arbitrary one of a plurality of CPUs through an Ethernet is constituted by a plurality of upstream and downstream PCI Express-network bridges, an Ethernet switch, and a system manager. Each of the upstream and downstream PCI Express-network bridges includes a PCI Express adapter which terminates a link of a PCI Express bus, a network adapter which terminates a link to the Ethernet switch, and a control unit which encapsulates a TLP in a frame, the destination of which is a MAC address of a bridge to which the destination is connected to transmit and receive the frame. Because the switch according to the present invention comprising a plurality of upstream PCI Express-network bridges and a plurality of downstream PCI Express-network bridges connected to the plurality of upstream PCI Express network bridges through a network is equivalent to a conventional PCI Express switch, it is needless to change a conventional PCI software.

摘要翻译： 通过以太网将多个外围设备连接到多个CPU中的任意一个的PCI Express交换机由多个上游和下游PCI Express网络桥，以太网交换机和系统管理器构成。 上游和下游PCI Express网络桥接器中的每一个包括PCI Express适配器，其终止PCI Express总线的链路，终止到以太网交换机的链路的网络适配器以及将TLP封装在帧中的控制单元， 其目的地是目的地与之连接以发送和接收帧的网桥的MAC地址。 因为包括通过网络连接到多个上游PCI Express网桥的多个上游PCI Express网络桥和多个下游PCI Express网桥的根据本发明的交换机等同于传统的PCI Express交换机， 不用改变传统的PCI软件。

公开(公告)号：USD543503S1

公开(公告)日：2007-05-29

申请号：US29223554

申请日：2005-02-15

申请人： Jun Suzuki

设计人： Jun Suzuki