公开(公告)号：US20120056220A1

公开(公告)日：2012-03-08

申请号：US13226045

申请日：2011-09-06

申请人： Taisuke SATO ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Taisuke SATO ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/60

CPC分类号： H01L33/007 ,  H01L33/46

摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.

摘要翻译： 根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。 第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。 在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。 在第一电介质层，第二电介质层和衬底上形成第一半导体层。 第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

公开(公告)号：US07763907B2

公开(公告)日：2010-07-27

申请号：US11850404

申请日：2007-09-05

申请人： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

发明人： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

IPC分类号： H01L33/22 ,  H01L33/14 ,  H01L33/38

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

摘要翻译： 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

公开(公告)号：US20080151957A1

公开(公告)日：2008-06-26

申请号：US12036409

申请日：2008-02-25

申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01S5/343

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US20070096142A1

公开(公告)日：2007-05-03

申请号：US11511337

申请日：2006-08-29

申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L29/24

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US20120138895A1

公开(公告)日：2012-06-07

申请号：US13398170

申请日：2012-02-16

申请人： Koichi TACHIBANA ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi TACHIBANA ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/04

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US07863637B2

公开(公告)日：2011-01-04

申请号：US12037358

申请日：2008-02-26

申请人： Hajime Nago ,  Koichi Tachibana ,  Kotaro Zaima ,  Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

发明人： Hajime Nago ,  Koichi Tachibana ,  Kotaro Zaima ,  Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  F21K9/00 ,  H01L27/156 ,  H01L33/16 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/16 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.

摘要翻译： 本发明提供了一种具有优异显色特性的半导体发光元件，一种半导体发光元件的制造方法和一种发光器件。 半导体发光元件包括：半导体衬底，其具有作为上表面的倾斜面的凸部和形成在凸部的任一侧上的凹部，凹部的宽度比凸部小， 凹部的底面位于比凸部的上表面更深的位置; 以及由氮化物系半导体构成并形成在半导体基板上至少覆盖凸部的发光层。

公开(公告)号：US08441023B2

公开(公告)日：2013-05-14

申请号：US13226045

申请日：2011-09-06

申请人： Taisuke Sato ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Taisuke Sato ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L33/46

摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.

摘要翻译： 根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。 第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。 在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。 在第一电介质层，第二电介质层和衬底上形成第一半导体层。 第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

公开(公告)号：US08004004B2

公开(公告)日：2011-08-23

申请号：US12955620

申请日：2010-11-29

申请人： Hajime Nago ,  Koichi Tachibana ,  Kotaro Zaima ,  Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

发明人： Hajime Nago ,  Koichi Tachibana ,  Kotaro Zaima ,  Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  F21K9/00 ,  H01L27/156 ,  H01L33/16 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/16 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.

公开(公告)号：US07683390B2

公开(公告)日：2010-03-23

申请号：US12036409

申请日：2008-02-25

申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L29/22

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US20080179623A1

公开(公告)日：2008-07-31

申请号：US11850404

申请日：2007-09-05

申请人： Koichi TACHIBANA ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

发明人： Koichi TACHIBANA ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

IPC分类号： H01L29/24

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

摘要翻译： 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。