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    Semiconductor light emitting element
    1.
    发明授权
    Semiconductor light emitting element 失效
    半导体发光元件

    公开(公告)号：US07763907B2

    公开(公告)日：2010-07-27

    申请号：US11850404

    申请日：2007-09-05

    申请人： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

    发明人： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

    IPC分类号： H01L33/22 ,  H01L33/14 ,  H01L33/38

    CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

    摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

    摘要翻译： 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
    半导体发光元件

    公开(公告)号：US20080179623A1

    公开(公告)日：2008-07-31

    申请号：US11850404

    申请日：2007-09-05

    申请人： Koichi TACHIBANA ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

    发明人： Koichi TACHIBANA ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

    IPC分类号： H01L29/24

    CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

    摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

    摘要翻译： 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

    Semiconductor light-emitting element and manufacturing method thereof
    10.
    发明授权
    Semiconductor light-emitting element and manufacturing method thereof 有权
    半导体发光元件及其制造方法

    公开(公告)号：US08354681B2

    公开(公告)日：2013-01-15

    申请号：US11689246

    申请日：2007-03-21

    申请人： Yasushi Hattori ,  Shinya Nunoue ,  Shinji Saito ,  Genichi Hatakoshi

    发明人： Yasushi Hattori ,  Shinya Nunoue ,  Shinji Saito ,  Genichi Hatakoshi

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/382 ,  H01L33/46 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014

    摘要： A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.

    摘要翻译： 一种半导体发光元件，包括具有第一表面和第二表面的半导体衬底，所述第一表面和第二表面面对所述第一表面的相对侧，所述半导体衬底具有形成在所述第一表面中的凹部，所述凹部具有V形十字 形成在所述凹部的内表面上的反射层，形成在所述反射层上的第一电极，形成在所述第二表面上的发光层，以及形成在所述发光层上的第二电极。