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公开(公告)号：US08780436B2
公开(公告)日：2014-07-15
申请号：US13343395
申请日：2012-01-04
IPC分类号： G02B26/00
CPC分类号： G02B26/0841 , G02B5/201
摘要： Direct view color displays and design structures of direct view color displays. The direct view displays include micromirrors having un-tilted and tilted states and multiple color filters or color reflectors.
摘要翻译： 直观视图彩色显示器和直观视图彩色显示器的设计结构。 直视图显示器包括具有不倾斜和倾斜状态的微镜，以及多个滤色器或彩色反射器。
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公开(公告)号：US08492807B2
公开(公告)日：2013-07-23
申请号：US12632040
申请日：2009-12-07
IPC分类号： H01L31/062
CPC分类号： G02B26/08 , B81B3/004 , B81B2201/047 , G02B7/023 , G02B26/0875
摘要： A tiltable micro-electro-mechanical (MEMS) system lens comprises a microscopic lens located on a front surface of a semiconductor-on-insulator (SOI) substrate and a semiconductor rim surrounding the periphery of the microscopic lens. Two horizontal semiconductor beams located at different heights are provided within a top semiconductor layer. The microscopic lens may be tilted by applying an electrical bias between the lens rim and one of the two semiconductor beams, thereby altering the path of an optical beam through the microscopic lens. An array of tiltable microscopic lenses may be employed to form a composite lens having a variable focal length may be formed. A design structure for such a tiltable MEMS lens is also provided.
摘要翻译： 可倾斜微电机械（MEMS）系统透镜包括位于绝缘体上半导体（SOI）衬底的前表面上的微观透镜和围绕微观透镜周边的半导体边缘。 位于不同高度的两个水平半导体光束设置在顶部半导体层内。 可以通过在透镜边缘和两个半导体束中的一个之间施加电偏压来倾斜微观透镜，从而改变光束通过微透镜的路径。 可以使用可倾斜微镜透镜的阵列来形成具有可变焦距的复合透镜。 还提供了这种可倾斜MEMS透镜的设计结构。
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公开(公告)号：US08460981B2
公开(公告)日：2013-06-11
申请号：US12892465
申请日：2010-09-28
申请人： John J. Ellis-Monaghan , Jeffrey P. Gambino , Kirk D. Peterson , Jed H. Rankin , Robert R. Robison
发明人： John J. Ellis-Monaghan , Jeffrey P. Gambino , Kirk D. Peterson , Jed H. Rankin , Robert R. Robison
IPC分类号： H01L21/00
CPC分类号： H01L21/76879 , H01L21/823807 , H01L21/823814 , H01L21/823871 , H01L27/092
摘要： Disclosed herein are various methods and structures using contacts to create differential stresses on devices in an integrated circuit (IC) chip. An IC chip is disclosed having a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET), a PFET contact to a source/drain region of the PFET and an NFET contact to a source/drain region of the NFET. In a first embodiment, a silicon germanium (SiGe) layer is included only under the PFET contact, between the PFET contact and the source/drain region of the PFET. In a second embodiment, either the PFET contact extends into the source/drain region of the PFET or the NFET contact extends into the source/drain region of the NFET.
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公开(公告)号：US08440519B2
公开(公告)日：2013-05-14
申请号：US12778319
申请日：2010-05-12
IPC分类号： H01L21/8238
CPC分类号： H01L29/66545 , H01L21/26506 , H01L21/26513 , H01L21/823807 , H01L21/823864 , H01L29/1083 , H01L29/6653 , H01L29/66537 , H01L29/6659 , H01L29/78 , H01L29/7833 , H01L29/7842 , H01L29/7849
摘要： An improved semiconductor device manufactured using, for example, replacement gate technologies. The method includes forming a dummy gate structure having a gate stack and spacers. The method further includes forming a dielectric material adjacent to the dummy gate structure. The method further includes removing the spacers to form gaps, and implanting a halo extension through the gaps and into an underlying diffusion region.
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35.发明授权公开(公告)号：US08334195B2
公开(公告)日：2012-12-18
申请号：US12556139
申请日：2009-09-09
IPC分类号： H01L21/22
CPC分类号： H01L27/14607 , H01L27/14689
摘要： CMOS pixel sensors with multiple pixel sizes and methods of manufacturing the CMOS pixel sensors with implant dose control are provided. The method includes forming a plurality of pixel sensors in a same substrate and forming a masking pattern over at least one of the plurality of pixel sensors that has a pixel size larger than a non-masked pixel sensor of the plurality of pixel sensors. The method further includes providing a single dosage implant to the plurality of pixel sensors. The at least one of the plurality of pixel sensors with the masking pattern receives a lower dosage than the non-masked pixel sensor.
摘要翻译： 提供具有多个像素尺寸的CMOS像素传感器和用植入剂量控制制造CMOS像素传感器的方法。 该方法包括在同一衬底中形成多个像素传感器，并在多个像素传感器中的至少一个像素尺寸上形成掩模图案，该像素传感器的像素尺寸大于多个像素传感器中的非掩蔽像素传感器。 该方法还包括向多个像素传感器提供单个剂量植入物。 具有掩蔽图案的多个像素传感器中的至少一个具有比非掩蔽像素传感器更低的剂量。
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36.发明授权System and method for correcting systematic parametric variations on integrated circuit chips in order to minimize circuit limited yield loss 有权用于校正集成电路芯片上的系统参数变化的系统和方法，以最小化电路限制的产量损失公开(公告)号：US08301290B2
公开(公告)日：2012-10-30
申请号：US12603679
申请日：2009-10-22
IPC分类号： G06F19/00
CPC分类号： G06F17/5068 , G06F2217/10
摘要： Disclosed are a system and a method of correcting systematic, design-based, parametric variations on integrated circuit chips to minimize circuit limited yield loss. Processing information and a map of a chip are stored. The processing information can indicate an impact, on a given device parameter, of changes in a value for a specification associated with a given process step. The map can indicate regional variations in the device parameter (e.g., threshold voltage). Based on the processing information and using the map as a guide, different values for the specification are determined, each to be applied in a different region of the integrated circuit chip during the process step in order to offset the mapped regional parametric variations. A process tool can then be selectively controlled to ensure that during chip manufacturing the process step is performed accordingly and, thereby to ensure that the regional parametric variations are minimized.
摘要翻译： 公开了一种用于校正集成电路芯片上的系统的，基于设计的参数变化的系统和方法，以最小化电路限制的产量损失。 存储处理信息和芯片的映射。 处理信息可以指示给定设备参数对与给定过程步骤相关联的规范的值的变化的影响。 地图可以指示设备参数中的区域变化（例如，阈值电压）。 基于处理信息并使用该图作为指导，确定规范的不同值，每个值在处理步骤期间应用于集成电路芯片的不同区域，以便抵消映射的区域参数变化。 然后可以选择性地控制处理工具，以确保在芯片制造期间相应地执行工艺步骤，从而确保区域参数变化最小化。
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37.发明申请公开(公告)号：US20110250715A1
公开(公告)日：2011-10-13
申请号：US13165375
申请日：2011-06-21
CPC分类号： H01L27/14685 , H01L27/14618 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14689 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.
摘要翻译： 在具有不同折射率的两层之间的光学界面处形成具有小于由光电二极管可检测的光的波长范围的垂直和横向尺寸的突起。 突起可以通过采用在第二聚合物嵌段组分的基质内形成第一聚合物嵌段组分的亚光刻特征阵列的自组装嵌段共聚物来形成。 聚合物嵌段组分的图案被转移到第一光学层中以形成纳米级突起的阵列。 或者，可以使用常规光刻来形成尺寸小于光的波长的突起。 第二光学层直接形成在第一光学层的突起上。 第一和第二光学层之间的界面具有渐变的折射率，并提供很少的反射光的高透射率。
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公开(公告)号：US20110134504A1
公开(公告)日：2011-06-09
申请号：US12632040
申请日：2009-12-07
CPC分类号： G02B26/08 , B81B3/004 , B81B2201/047 , G02B7/023 , G02B26/0875
摘要： A tiltable micro-electro-mechanical (MEMS) system lens comprises a microscopic lens located on a front surface of a semiconductor-on-insulator (SOI) substrate and a semiconductor rim surrounding the periphery of the microscopic lens. Two horizontal semiconductor beams located at different heights are provided within a top semiconductor layer. The microscopic lens may be tilted by applying an electrical bias between the lens rim and one of the two semiconductor beams, thereby altering the path of an optical beam through the microscopic lens. An array of tiltable microscopic lenses may be employed to form a composite lens having a variable focal length may be formed. A design structure for such a tiltable MEMS lens is also provided.
摘要翻译： 可倾斜微电机械（MEMS）系统透镜包括位于绝缘体上半导体（SOI）衬底的前表面上的微观透镜和围绕微观透镜周边的半导体边缘。 位于不同高度的两个水平半导体光束设置在顶部半导体层内。 可以通过在透镜边缘和两个半导体束中的一个之间施加电偏压来倾斜微观透镜，从而改变光束通过微透镜的路径。 可以使用可倾斜微镜透镜的阵列来形成具有可变焦距的复合透镜。 还提供了这种可倾斜MEMS透镜的设计结构。
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39.发明申请公开(公告)号：US20110068436A1
公开(公告)日：2011-03-24
申请号：US12566043
申请日：2009-09-24
IPC分类号： H01L21/311 , H01L21/3213 , H01L23/544
CPC分类号： H01L21/32139 , H01L21/0338 , H01L21/28123 , H01L21/3185
摘要： Methods and structures for enhancing the homogeneity in a ratio of perimeter to surface area among heterogeneous features in different substrate regions. At least one shape on the substrate includes an added edge effective to reduce a difference in the perimeter-to-surface area ratio between the features in a first substrate region and features in a second substrate region. The improved homogeneity in the perimeter-to-surface area ratio reduces variations in a thickness of a conformal layer deposited across the features in the first and second substrate regions.
摘要翻译： 用于增强不同基底区域中异质特征之间的周长与表面积之比的均匀性的方法和结构。 衬底上的至少一种形状包括有效减少第一衬底区域中的特征与第二衬底区域中的特征之间的周边表面积比的差异的附加边缘。 周边至表面积比的改善的均匀性降低了跨越第一和第二基底区域中的特征沉积的共形层的厚度变化。
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公开(公告)号：US20100264473A1
公开(公告)日：2010-10-21
申请号：US12770349
申请日：2010-04-29
IPC分类号： H01L31/0232 , H01L31/0203 , H01L31/02
CPC分类号： H01L31/103 , H01L24/05 , H01L24/73 , H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L31/02165 , H01L31/0236 , H01L2224/04042 , H01L2224/05 , H01L2224/32225 , H01L2224/48227 , H01L2224/48464 , H01L2224/4847 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/12043 , H01L2924/14 , H01L2924/15311 , H01L2924/15312 , H01L2924/3025 , Y02E10/50 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
摘要翻译： 提供了具有不同折射率的两层之间的突起阵列的光学结构。 突起阵列具有小于由CMOS图像传感器的光电二极管可检测的光的波长范围的垂直和侧向尺寸。 突起的阵列提供了很少的反射光的高透射率。 突起阵列可以设置在光电二极管上，后端行互连结构中，用于光电二极管的透镜，光电二极管的背面或芯片封装的窗口上。
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