公开(公告)号：US08121728B2

公开(公告)日：2012-02-21

申请号：US12134220

申请日：2008-06-06

申请人： Tsu-Li Chiang ,  Xiao-Guang Li ,  Han-Che Wang ,  Hua-Dong Cheng ,  Kuan-Hong Hsieh ,  Li Wang

发明人： Tsu-Li Chiang ,  Xiao-Guang Li ,  Han-Che Wang ,  Hua-Dong Cheng ,  Kuan-Hong Hsieh ,  Li Wang

IPC分类号： B25J13/00

CPC分类号： G07C9/00111

摘要： The present invention relates to a robot apparatus and an output control method adapted for the robot apparatus. The method includes steps of: receiving radio frequency (RF) signals of identification (ID) codes from several wireless communication devices within a predetermined area and time period; sensing people and obtaining the number of people within the predetermined area and time period; comparing current ID codes and the number of people in the predetermined area with what were determined previously, generating an update signal when the comparison is not equal; replacing the previous data with the current data; acquiring output data based on the associated output found in the output table; and performing an output based on the output data.

摘要翻译： 本发明涉及适用于机器人装置的机器人装置和输出控制方法。 该方法包括以下步骤：在预定区域和时间段内接收来自若干无线通信设备的识别（ID）码的射频（RF）信号; 感知人员并获得预定区域和时间段内的人数; 将当前ID码和预定区域中的人数与先前确定的比较进行比较，当比较不相等时产生更新信号; 用当前数据替换以前的数据; 基于在输出表中找到的关联输出来获取输出数据; 并且基于输出数据执行输出。

公开(公告)号：US20110298005A1

公开(公告)日：2011-12-08

申请号：US12680261

申请日：2007-10-12

申请人： Fengyi Jiang ,  Li Wang ,  Chunlan Mo ,  Wenqing Fang

发明人： Fengyi Jiang ,  Li Wang ,  Chunlan Mo ,  Wenqing Fang

IPC分类号： H01L33/02 ,  H01L21/20

CPC分类号： H01L21/02576 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： A method for fabricating a group III-V n-type nitride structure comprises fabricating a growth Si substrate and then depositing a group III-V n-type layer above the Si substrate using silane gas (SiH4) as a precursor at a flow rate set to a first predetermined value (210). Subsequently, the SiH4 flow rate is reduced to a second predetermined value during the fabrication of the n-type layer (220). The method also comprises forming a multi-quantum-well active region above the n-type layer. In addition, the flow rate is reduced over a predetermined period of time, and the second predetermined value is reached at a predetermined, sufficiently small distance from the interface between the n-type layer and the active region (230).

摘要翻译： 制造III-V族氮化物结构的方法包括制造生长Si衬底，然后使用硅烷气体（SiH 4）作为前体以流量设定在Si衬底上沉积III-V族III型层 到第一预定值（210）。 随后，在制造n型层（220）期间，将SiH 4流量减小到第二预定值。 该方法还包括在n型层上形成多量子阱有源区。 此外，在预定时间段内减小流量，并且在与n型层和有源区域（230）之间的界面预定的足够小的距离处达到第二预定值。

公开(公告)号：US08065622B2

公开(公告)日：2011-11-22

申请号：US12202421

申请日：2008-09-01

申请人： Xiao-Guang Li ,  Kuan-Hong Hsieh ,  Han-Che Wang ,  Li Wang ,  Shin-Hong Chung ,  Hua-Dong Cheng

发明人： Xiao-Guang Li ,  Kuan-Hong Hsieh ,  Han-Che Wang ,  Li Wang ,  Shin-Hong Chung ,  Hua-Dong Cheng

IPC分类号： G06F3/048

CPC分类号： G09G3/20 ,  G09G5/00 ,  G09G2310/0221

摘要： A displaying device includes an input unit, a region defining unit, a content allocating unit, an obtaining unit, a display controlling unit and a display unit. The region defining unit defines regions by incorporating one or more unit regions in each of the regions according to users' selections and generates region defining information. The content allocating unit allocates contents for the regions according to the users' selections and generates content allocating information. The obtaining unit obtains the region defining information, the content allocating information, and contents according to the content allocating information, and then transmits the information and contents to the display controlling unit. The display controlling unit splits a display area of the display unit into the regions defined by the region defining unit and displays the contents in the regions correspondingly according to the content allocating information. Related methods are also provided.

摘要翻译： 显示装置包括输入单元，区域定义单元，内容分配单元，获取单元，显示控制单元和显示单元。 区域定义单元通过根据用户的选择在每个区域中并入一个或多个单元区域来定义区域，并且生成区域定义信息。 内容分配单元根据用户的选择分配区域的内容，生成内容分配信息。 获取单元根据内容分配信息获得区域定义信息，内容分配信息和内容，然后将该信息和内容发送到显示控制单元。 显示控制单元将显示单元的显示区域划分为由区域定义单元定义的区域，并根据内容分配信息相应地显示区域中的内容。 还提供了相关方法。

公开(公告)号：US20110142725A1

公开(公告)日：2011-06-16

申请号：US12635523

申请日：2009-12-10

申请人： Xuanbin Liu ,  Li Wang

发明人： Xuanbin Liu ,  Li Wang

IPC分类号： A61L9/00 ,  A61L9/20 ,  B01J37/34 ,  F24F3/16 ,  B23P17/00

CPC分类号： A61L9/205 ,  A61L2209/14

摘要： A photocatalytic air purification apparatus and method of fabricating the same. The apparatus may be configured to include a light source surrounded by one or more porous plate substrates. An inner and outer surface of each plate substrate may be coated with a photocatalyst material. The light source may be placed in a direction parallel to the direction of an air flow and in optical proximity to the plate substrates in order to activate the photocatalyst coating. The photocatalyst coating associated with the plate substrates may be activated by absorbing light with a wavelength shorter than a cut-off activation wavelength from the light source in order to capture and decompose organic components and airborne pollutants in the air by the activated photocatalyst.

摘要翻译： 一种光催化空气净化装置及其制造方法。 该装置可以被配置为包括由一个或多个多孔板基板包围的光源。 每个板基板的内表面和外表面可以涂覆有光催化剂材料。 光源可以沿平行于空气流的方向的方向放置，并且光​​学接近板基板，以激活光催化剂涂层。 可以通过从光源吸收波长短于截止激活波长的光来激活与板基板相关联的光催化剂涂层，以通过活化的光催化剂捕获和分解空气中的有机组分和空气传播的污染物。

公开(公告)号：US20110140080A1

公开(公告)日：2011-06-16

申请号：US13059140

申请日：2008-08-19

申请人： Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Guping Wang ,  Shaohua Zhang

发明人： Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Guping Wang ,  Shaohua Zhang

IPC分类号： H01L33/06 ,  H01L33/58 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/382 ,  H01L33/44

摘要： One embodiment of the present invention provides a method for fabricating light-emitting diodes. The method includes etching grooves on a growth substrate, thereby creating mesas on the growth substrate. The method further includes fabricating on each of the mesas an indium gallium aluminum nitride (InGaAlN) multilayer structure which contains a p-type layer, a multi-quantum-well layer, and an n-type layer. In addition, the method includes depositing one or more metal substrate layers on top of the InGaAlN multilayer structure. Moreover, the method includes removing the growth substrate. Furthermore, the method includes creating electrodes on both sides of the InGaAlN multilayer structure, thereby resulting in a vertical-electrode configuration.

摘要翻译： 本发明的一个实施例提供一种制造发光二极管的方法。 该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。 该方法还包括在每个台面上制造包含p型层，多量子阱层和n型层的铟镓铝氮化物（InGaAlN）多层结构。 此外，该方法包括在InGaAlN多层结构的顶部上沉积一个或多个金属衬底层。 此外，该方法包括去除生长衬底。 此外，该方法包括在InGaAlN多层结构的两侧形成电极，从而形成垂直电极结构。

公开(公告)号：US20110133159A1

公开(公告)日：2011-06-09

申请号：US13059400

申请日：2008-08-19

申请人： Fengyi Jiang ,  Yingwen Tang ,  Chunlan Mo ,  Li Wang

发明人： Fengyi Jiang ,  Yingwen Tang ,  Chunlan Mo ,  Li Wang

IPC分类号： H01L33/06 ,  H01L33/44

CPC分类号： H01L33/145 ,  H01L33/0079 ,  H01L33/44

摘要： A semiconductor light-emitting device includes a substrate, a first doped semiconductor layer, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped semiconductor layer, wherein part of the first doped semiconductor layer is passivated, and wherein the passivated portion of the first doped semiconductor layer substantially insulates the first electrode from the edges of the first doped semiconductor layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped semiconductor layer and a passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode.

摘要翻译： 半导体发光器件包括衬底，第一掺杂半导体层，位于第一掺杂半导体层上方的第二掺杂半导体层以及位于第一和第二掺杂层之间的多量子阱（MQW）有源层 。 该器件还包括耦合到第一掺杂半导体层的第一电极，其中部分第一掺杂半导体层被钝化，并且其中第一掺杂半导体层的钝化部分使第一电极与第一掺杂半导体层的边缘基本绝缘 层，从而减少表面复合。 该器件还包括耦合到第二掺杂半导体层的第二电极和基本上覆盖第一和第二掺杂半导体层，MQW有源层和第二掺杂半导体层的水平表面的一部分的侧壁的钝化层， 不被第二电极覆盖。

公开(公告)号：US20110133158A1

公开(公告)日：2011-06-09

申请号：US13059031

申请日：2008-08-19

申请人： Fengyi Jiang ,  Li Wang ,  Chunlan Mo ,  Wenqing Fang

发明人： Fengyi Jiang ,  Li Wang ,  Chunlan Mo ,  Wenqing Fang

IPC分类号： H01L33/06 ,  H01L21/20

CPC分类号： H01L21/0262 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06

摘要： A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas.

摘要翻译： 通过使用氮化铟镓（InGaN）半导体材料制造量子阱的方法包括在反应器室中的第一预定温度下在层状III-V族氮化物结构上制造势阱，通过将反应器中的In前体气体和 一种Ga前体气体。 该方法还包括在制造势阱之后，终止Ga前体气体，保持In前体气体的流动，并将反应器室中的温度升高到第二预定温度，同时调节In前体气体流速 从第一流量到第二流量。 此外，该方法包括在维持第二流量的同时在第二预定温度下退火和稳定势阱。 该方法还包括在恢复Ga前体气体的同时在第二预定温度下制造位于势阱上方的势垒。

公开(公告)号：US07919784B2

公开(公告)日：2011-04-05

申请号：US12063978

申请日：2006-09-29

申请人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang

发明人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

摘要： One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.

摘要翻译： 本发明的一个实施例提供了一种半导体发光器件，其包括：上包层; 下包层; 在上和下包层之间的有源层; 形成到上包层的导电路径的上欧姆接触层; 以及形成下部包层的导电路径的下欧姆接触层。 下欧姆接触层具有与上欧姆接触层的形状基本上不同的形状，从而当施加电压时，载流子转移离开有源层的基本上在上欧姆接触层下方的部分 到上，下欧姆接触层。

公开(公告)号：US20110042685A1

公开(公告)日：2011-02-24

申请号：US12543473

申请日：2009-08-18

申请人： Li Wang ,  Sima Dimitrijev ,  Alan Iacopi ,  Jisheng Han ,  Leonie Hold ,  Philip Tanner ,  Fred Kong ,  Herbert Harrison

发明人： Li Wang ,  Sima Dimitrijev ,  Alan Iacopi ,  Jisheng Han ,  Leonie Hold ,  Philip Tanner ,  Fred Kong ,  Herbert Harrison

IPC分类号： H01L29/24 ,  C30B23/00

CPC分类号： C30B25/165 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262

摘要： Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, and methods to form silicon carbide structures, including epitaxial layers, by supplying sources of silicon and carbon with sequential emphasis. In at least some embodiments, a method of forming an epitaxial layer of silicon carbide can include depositing a layer on a substrate in the presence of a silicon source, and purging gaseous materials subsequent to depositing the layer. Further, the method can include converting the layer into a sub-layer of silicon carbide in the presence of a carbon source, and purging other gaseous materials subsequent to converting the layer. The presence of the silicon source can be independent of the presence of the carbon source. In some embodiments, dopants, such as n-type dopants, can be introduced during the formation of the epitaxial layer of silicon carbide.

摘要翻译： 本发明的实施例一般涉及半导体和半导体制造技术，更具体地涉及通过以顺序强调提供硅和碳的源来形成包括外延层的碳化硅结构的器件，集成电路，衬底和方法。 在至少一些实施例中，形成碳化硅外延层的方法可以包括在硅源的存在下在衬底上沉积层，以及在沉积层之后吹扫气态材料。 此外，该方法可以包括在碳源的存在下将层转化为碳化硅的子层，以及在转换层之后吹扫其它气态材料。 硅源的存在可以独立于碳源的存在。 在一些实施例中，可以在形成碳化硅外延层期间引入掺杂剂，例如n型掺杂剂。

公开(公告)号：US20110006319A1

公开(公告)日：2011-01-13

申请号：US12159850

申请日：2007-08-31

申请人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo ,  Yong Pu ,  Chuanbing Xiong

发明人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo ,  Yong Pu ,  Chuanbing Xiong

IPC分类号： H01L33/30 ,  H01L33/32

CPC分类号： H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

摘要： One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer). The n-type layer is epitaxially grown by using ammonia gas (NH3) as the nitrogen source prior to growing the active layer and the p-type layer. The flow rate ratio between group V and group III elements is gradually reduced from an initial value to a final value. The GaN-based LED exhibits a reverse breakdown voltage equal to or greater than 60 volts.

摘要翻译： 本发明的一个实施例提供了一种包含n型GaN基半导体层（n型层）的基于氮化镓（GaN）的半导体发光器件（LED）。 活性层 和p型GaN类半导体层（p型层）。 在生长活性层和p型层之前，通过使用氨气（NH 3）作为氮源，外延生长n型层。 V组和III组元件之间的流量比从初始值逐渐减小到最终值。 GaN基LED呈现等于或大于60伏的反向击穿电压。