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    SEMICONDUCTOR DEVICES WITH FLEXIBLE REINFORCEMENT STRUCTURE
    32.
    发明公开
    SEMICONDUCTOR DEVICES WITH FLEXIBLE REINFORCEMENT STRUCTURE 审中-公开

    公开(公告)号：US20240304465A1

    公开(公告)日：2024-09-12

    申请号：US18668887

    申请日：2024-05-20

    Applicant: Micron Technology, Inc.

    Inventor： Owen R. Fay ,  Chan H. Yoo

    IPC: H01L21/56 ,  H01L21/78 ,  H01L23/29 ,  H01L23/31

    CPC classification number: H01L21/56 ,  H01L21/78 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3114

    Abstract: Methods for manufacturing semiconductor devices having a flexible reinforcement structure, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a semiconductor device includes electrically coupling at least one semiconductor die to a redistribution structure on a first carrier. The semiconductor die can include a first surface facing the redistribution structure and a second surface spaced apart from the redistribution structure. The method also includes reducing a thickness of the semiconductor die to no more than 10 μm. The method further includes coupling a flexible reinforcement structure to the second surface of the at least one semiconductor die.

    THREE-DIMENSIONAL STACKING SEMICONDUCTOR ASSEMBLIES AND METHODS OF MANUFACTURING THE SAME
    38.
    发明申请
    THREE-DIMENSIONAL STACKING SEMICONDUCTOR ASSEMBLIES AND METHODS OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20220208736A1

    公开(公告)日：2022-06-30

    申请号：US17697141

    申请日：2022-03-17

    Applicant: Micron Technology, Inc.

    Inventor： Owen R. Fay ,  Chan H. Yoo ,  Mark E. Tuttle

    IPC: H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L23/532 ,  H01L23/00

    Abstract: Semiconductor device packages and associated assemblies are disclosed herein. In some embodiments, the semiconductor device package includes a substrate having a first side and a second side opposite the first side, a first metallization layer positioned at the first side of the substrate, and a second metallization layer in the substrate and electrically coupled to the first metallization layer. The semiconductor device package further includes a metal bump electrically coupled to the first metallization layer and a divot formed at the second side of the substrate and aligned with the metal bump. The divot exposes a portion of the second metallization layer and enables the portion to electrically couple to another semiconductor device package.

    USE OF PRE-CHANNELED MATERIALS FOR ANISOTROPIC CONDUCTORS
    40.
    发明申请
    USE OF PRE-CHANNELED MATERIALS FOR ANISOTROPIC CONDUCTORS 有权

    公开(公告)号：US20220028820A1

    公开(公告)日：2022-01-27

    申请号：US17490224

    申请日：2021-09-30

    Applicant: Micron Technology, Inc.

    Inventor： Mark E. Tuttle ,  John F. Kaeding ,  Owen R. Fay ,  Eiichi Nakano ,  Shijian Luo

    IPC: H01L23/00

    Abstract: A semiconductor device assembly has a first substrate, a second substrate, and an anisotropic conductive film. The first substrate includes a first plurality of connectors. The second substrate includes a second plurality of connectors. The anisotropic conductive film is positioned between the first plurality of connectors and the second plurality of connectors. The anisotropic conductive film has an electrically insulative material and a plurality of interconnects laterally separated by the electrically insulative material. The plurality of interconnects forms electrically conductive channels extending from the first plurality of connectors to the second plurality of connectors. A method includes connecting the plurality of interconnects to the first plurality of connectors and the second plurality of connectors, such that the electrically conductive channels are operable to conduct electricity from the first substrate to the second substrate. The method may include passing electrical current through the plurality of interconnects.

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