公开(公告)号：US4473243A

公开(公告)日：1984-09-25

申请号：US343475

申请日：1982-01-28

申请人： Hisashi Ogawa

发明人： Hisashi Ogawa

IPC分类号： B60R22/04 ,  B60R22/20 ,  B60R22/24 ,  B60R22/32 ,  B60R21/00

CPC分类号： B60R22/20 ,  B60R22/24

摘要： A shoulder webbing anchoring device according to the present invention includes a side anchor fixed on a window frame or a side wall of a vehicle body and a webbing anchor holding one end of the webbing and coupled to the side anchor through an anchor pin having an enlarged head. The side anchor has small and large diameter holes partially overlapping each other, the small diameter hole being smaller than the enlarged head and the large diameter hole being larger than the enlarged head, whereby when the anchor pin is in the small diameter hole, the webbing anchor is rotatably coupled with the side anchor, and when the anchor pin is in the large diameter hole, the webbing anchor is allowed to be separated from the side anchor.

摘要翻译： 根据本发明的肩带式固定装置包括固定在车体框架或车体侧壁上的侧固定件，以及安装在织带的一端并且通过锚定销连接到侧锚的织带锚固件， 头。 侧锚具有部分重叠的小直径孔，小直径孔小于扩大头部，大直径孔大于扩大头部，由此当锚销在小直径孔中时，织带 锚固体与侧锚可旋转地联接，并且当锚定销在大直径孔中时，允许织带锚与侧锚分离。

公开(公告)号：US4345780A

公开(公告)日：1982-08-24

申请号：US148037

申请日：1980-05-08

申请人： Shigeru Moriya ,  Hisashi Ogawa ,  Mitsuaki Katsono

发明人： Shigeru Moriya ,  Hisashi Ogawa ,  Mitsuaki Katsono

IPC分类号： B60R22/04 ,  B60R21/02

CPC分类号： B60R22/04

摘要： When leaving a vehicle, an occupant turns forwardly in the vehicle a guide lever, through which extends a webbing, one end of which is engaged with a vehicle door and the other end of which is wound up into a retractor provided at the substantially central portion of the vehicle, to thereby enlarge a space formed between the webbing and a seat. This release lever is locked in a condition of being turned forwardly in the vehicle. However, the release lever is unlocked after the occupant enters the vehicle and before the vehicle enters the normal running condition, thereby enabling to bring the occupant into a suitable seatbelt fastened condition.

摘要翻译： 当离开车辆时，乘客在车辆中向前转动导引杆，通过该引导杆延伸织带，其一端与车门接合，另一端卷绕在设置在大致中央部分的牵开器 从而扩大了在织带和座椅之间形成的空间。 该释放杆被锁定在车辆中向前转动的状态。 然而，释放杆在乘客进入车辆之后并且在车辆进入正常行驶状态之前解锁，从而能够使乘客进入合适的安全带紧固状态。

公开(公告)号：US08445096B2

公开(公告)日：2013-05-21

申请号：US12087758

申请日：2007-01-11

申请人： Takashi Muromachi ,  Hisashi Ogawa ,  Mamoru Yoshida ,  Nobuki Iwai

发明人： Takashi Muromachi ,  Hisashi Ogawa ,  Mamoru Yoshida ,  Nobuki Iwai

IPC分类号： B32B3/00 ,  B32B23/02 ,  B32B17/06

CPC分类号： B60J1/00 ,  C03C17/002 ,  C03C17/007 ,  C03C17/009 ,  C03C17/366 ,  C03C2217/216 ,  C03C2217/23 ,  C03C2217/231 ,  C03C2217/24 ,  C03C2217/283 ,  C03C2217/29 ,  C03C2217/475 ,  C03C2217/476 ,  C03C2217/948 ,  C03C2218/114 ,  Y10T428/24479 ,  Y10T428/24612 ,  Y10T428/24777

摘要： A glass substrate is held by a glass substrate holding member in the vertical direction, and a nozzle is used to eject an infrared cutoff liquid onto the upper portion of the glass substrate. The infrared cutoff liquid flows vertically downward so as to be applied onto the glass substrate. The film thickness of the lower portion of an infrared cutoff film is greater than that of the upper portion. The glass substrate is dried for approximately five minutes at room temperature. Then, the glass substrate onto which the infrared cutoff liquid has been applied is placed in an oven preheated to 200° C., heated for ten minutes, and then cooled. The glass substrate having the infrared cutoff film thereon is installed in a railroad vehicle such that the lower portion of the glass substrate is located on the lower side with respect to the railroad vehicle.

摘要翻译： 玻璃基板由玻璃基板保持部件沿垂直方向保持，并且使用喷嘴将红外线截止液喷射到玻璃基板的上部。 红外截止液体垂直向下流动以便施加到玻璃基板上。 红外截止膜的下部的膜厚度大于上部的膜厚。 将玻璃基板在室温下干燥约5分钟。 然后，将其上施加有红外线截止液体的玻璃基板放置在预热至200℃的烘箱中，加热10分钟，然后冷却。 其上具有红外截止膜的玻璃基板安装在铁路车辆中，使得玻璃基板的下部相对于铁路车辆位于下侧。

公开(公告)号：US08004044B2

公开(公告)日：2011-08-23

申请号：US12473710

申请日：2009-05-28

申请人： Hisashi Ogawa ,  Yoshihiro Mori

发明人： Hisashi Ogawa ,  Yoshihiro Mori

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： H01L21/28088 ,  H01L21/823842 ,  H01L21/82385 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device including a first transistor of a first conductivity type provided on a first active region of a semiconductor region, and a second transistor of a second conductivity type provided on a second active region of the semiconductor region. The first transistor includes a first gate insulating film and a first gate electrode, the first gate insulating film contains a high-k material and a first metal, and the first gate electrode includes a lower conductive film, a first conductive film and a first silicon film. The second transistor includes a second gate insulating film and a second gate electrode, the second gate insulating film contains a high-k material and a second metal, and the second gate electrode includes a second conductive film made of the same material as the first conductive film, and a second silicon film.

摘要翻译： 一种半导体器件，包括设置在半导体区域的第一有源区上的第一导电类型的第一晶体管和设置在半导体区域的第二有源区上的第二导电类型的第二晶体管。 第一晶体管包括第一栅极绝缘膜和第一栅电极，第一栅极绝缘膜包含高k材料和第一金属，并且第一栅电极包括下导电膜，第一导电膜和第一硅 电影。 第二晶体管包括第二栅极绝缘膜和第二栅电极，第二栅极绝缘膜包含高k材料和第二金属，第二栅极包括由与第一导电性材料相同的材料制成的第二导电膜 膜和第二硅膜。

公开(公告)号：US07977800B2

公开(公告)日：2011-07-12

申请号：US12247518

申请日：2008-10-08

申请人： Tsutomu Oosuka ,  Hisashi Ogawa ,  Yoshihiro Sato

发明人： Tsutomu Oosuka ,  Hisashi Ogawa ,  Yoshihiro Sato

IPC分类号： H01L21/8234

CPC分类号： H01L23/535 ,  H01L21/28518 ,  H01L21/28525 ,  H01L21/76895 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L27/11 ,  H01L29/161 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer.

摘要翻译： 半导体器件包括：晶体管，其具有形成在半导体衬底上的栅极电极和形成在半导体衬底的位于栅电极两侧的部分中的第一和第二源极/漏极区域; 形成在相对于第一源极/漏极区域的与栅电极相对的位置处的栅极互连; 以及形成在所述第一源极/漏极区域上以在所述半导体衬底的顶表面上方突出的第一硅 - 锗层。 栅极互连和第一源极/漏极区域经由包括第一硅 - 锗层的局部互连结构连接。

公开(公告)号：US20070108530A1

公开(公告)日：2007-05-17

申请号：US11543223

申请日：2006-10-05

申请人： Hisashi Ogawa ,  Yasushi Naito ,  Chiaki Kudo

发明人： Hisashi Ogawa ,  Yasushi Naito ,  Chiaki Kudo

IPC分类号： H01L29/94 ,  H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823864

摘要： A semiconductor device includes a MIS transistor formed in a region of a semiconductor region. The MIS transistor includes a gate insulating film formed on the region, a gate electrode formed on the gate insulating film and fully silicided with metal, source/drain regions formed in parts of the region on the sides of the gate electrode and an insulating film formed to cover the gate electrode and the source/drain regions to cause stress strain in part of the region below the gate electrode.

摘要翻译： 半导体器件包括形成在半导体区域的区域中的MIS晶体管。 MIS晶体管包括形成在该区域上的栅极绝缘膜，形成在栅极绝缘膜上并完全硅化金属的栅极电极，形成在栅极侧面上的部分区域中的源极/漏极区域和形成的绝缘膜 以覆盖栅极电极和源极/漏极区域，以在栅电极下方的部分区域引起应力应变。

公开(公告)号：US06995415B2

公开(公告)日：2006-02-07

申请号：US10475115

申请日：2003-02-14

申请人： Hisashi Ogawa ,  Hiroaki Nakaoka ,  Atsuhiro Kajiya ,  Shin Hashimoto ,  Kyoko Egashira

发明人： Hisashi Ogawa ,  Hiroaki Nakaoka ,  Atsuhiro Kajiya ,  Shin Hashimoto ,  Kyoko Egashira

IPC分类号： H01L27/108

CPC分类号： H01L27/10852 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/10894 ,  H01L27/10897

摘要： A memory cell transistor and a planar capacitor are provided in a memory region, and both transistors of a CMOS device are provided in a logic circuit region. A capacitance dielectric 15 and a plate electrode 16b of the planar capacitor are provided over a trench shared with a shallow trench isolation 12a, and the upper part of the trench is filled with the capacitance dielectric 15 and the plate electrode 16b. An n-type diffusion layer 19 that is a storage node is formed, with an end region thereof extending along one side of the upper part of the trench, to a region of the substrate overlapping with the shallow trench isolation 12a. The area of a part of the substrate functioning as a capacitor can be increased without increasing the substrate area.

摘要翻译： 存储单元晶体管和平面电容器设置在存储区域中，CMOS器件的两个晶体管都设置在逻辑电路区域中。 平面电容器的电容电介质15和平板电极16b设置在与浅沟槽隔离层12a共同的沟槽上，并且沟槽的上部填充有电容电介质15和板电极16b。 形成作为存储节点的n型扩散层19，其端部区域沿着沟槽的上部的一侧延伸到与浅沟槽隔离层12a重叠的区域。 可以增加用作电容器的基板的一部分的面积，而不增加基板面积。

公开(公告)号：US06465108B1

公开(公告)日：2002-10-15

申请号：US09360279

申请日：1999-07-26

申请人： Kazutaka Kamitani ,  Toyoyuki Teranishi ,  Kazuhiro Doushita ,  Takashi Sunada ,  Hiroaki Kobayashi ,  Hiroaki Yamamoto ,  Hisashi Ogawa

发明人： Kazutaka Kamitani ,  Toyoyuki Teranishi ,  Kazuhiro Doushita ,  Takashi Sunada ,  Hiroaki Kobayashi ,  Hiroaki Yamamoto ,  Hisashi Ogawa

IPC分类号： B32B904

CPC分类号： C03C17/30 ,  C03C1/008 ,  C03C17/25 ,  C03C17/3405 ,  C03C17/42 ,  C03C2217/213 ,  C03C2217/76 ,  C03C2218/113 ,  C23C18/1212 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1295 ,  Y10T428/31612 ,  Y10T428/31663

摘要： Coating liquid prepared by dissolving an acid and a silicon alkoxide into alcohol, containing at least one of either a silicon alkoxide or a hydrolyzate thereof (including a partial hydrolyzate) in an amount of 0.010 to 3% by weight (in terms of silica), an acid in terms of 0.0010 to 1.0 normality, and water in terms of 0 to 10% by weight is coated on a substrate to produce an article coated with a silica-based film. By this method for producing a silica-based film coated article, an excellent silica-based film coated article can be obtained without requiring baking and pretreatment. Furthermore, a functional film coated article excellent in durability can be produced in a short period of time and safely by using the abovementioned silica-based film as a primer film and applying thereon an organosilane having a hydrolyzable group and a functional group having a specific function or a hydrolyzate thereof.

摘要翻译： 将含有0.010〜3重量％（以二氧化硅计）的含有硅烷醇盐或其水解物（包括部分水解产物）中的至少一种的酸和硅醇盐溶解在醇中制备的涂布液， 以0.0010至1.0的正常性为基准的酸，并且将0至10重量％的水涂覆在基材上以制备涂覆有二氧化硅基膜的制品。 通过该二氧化硅系薄膜涂布体的制造方法，可以得到优异的二氧化硅系薄膜被覆制品，而不需要烘烤和预处理。 此外，通过使用上述二氧化硅系膜作为底涂膜，可以在短时间内安全地制造耐久性优异的功能膜涂布制品，并在其上涂布具有可水解基团和具有特定功能的官能团的有机硅烷 或其水解产物。

公开(公告)号：US5891762A

公开(公告)日：1999-04-06

申请号：US686416

申请日：1996-07-26

申请人： Hiroyuki Sakai ,  Atsuhiro Kajiya ,  Hisashi Ogawa

发明人： Hiroyuki Sakai ,  Atsuhiro Kajiya ,  Hisashi Ogawa

IPC分类号： H01L21/82 ,  H01L21/8239 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10844 ,  H01L27/1052

摘要： A manufacturing method for a semiconductor device, whereby poly-silicon serving as an etching stopper is formed above a redundant fuse at the same time as a cell plate is. A silicon nitride film, an oxide film, and another oxide film on the redundant fuse are consecutively etched using the poly-silicon as the etching stopper. Then the poly-silicon is etched.

摘要翻译： 一种用于半导体器件的制造方法，其中用作蚀刻阻挡层的多晶硅与单元板同时形成在冗余熔丝上方。 使用多晶硅作为蚀刻停止器，连续地蚀刻冗余熔丝上的氮化硅膜，氧化膜和另一氧化膜。 然后蚀刻多晶硅。

公开(公告)号：US5786273A

公开(公告)日：1998-07-28

申请号：US602575

申请日：1996-02-14

申请人： Toshitaka Hibi ,  Takatoshi Yasui ,  Hisashi Ogawa ,  Susumu Akamatsu ,  Shunsuke Kugo

发明人： Toshitaka Hibi ,  Takatoshi Yasui ,  Hisashi Ogawa ,  Susumu Akamatsu ,  Shunsuke Kugo

IPC分类号： H01L21/768 ,  H01L21/44

CPC分类号： H01L21/768

摘要： Formed in a second interlayer dielectric are a first contact hole and a second contact hole. The first and second contact holes each extend to a first-level interconnect line. Tungsten is formed on the entirety of a substrate to form a first plug, a second plug, and a tungsten layer. A silicon oxide layer is formed. Thereafter, a patterning process is carried out to form a second-level interconnect line which is connected with the first plug and a top protective layer, and the top of the second plug remains exposed. A sidewall is formed on the side surfaces of the second-level interconnect line and the top protective layer. Subsequently, a third-level interconnect line, which is connected with the exposed second plug, is formed. Such arrangement not only reduces the number of contact hole formation masks, it also cuts down the number of fabrication steps. Further, the aspect ratio of the second contact hole becomes lower thereby achieving highly reliable semiconductor devices.

摘要翻译： 形成在第二层间电介质中的是第一接触孔和第二接触孔。 第一和第二接触孔各自延伸到第一级互连线。 在整个基板上形成钨以形成第一插塞，第二插头和钨层。 形成氧化硅层。 此后，进行图案化处理以形成与第一插头和顶部保护层连接的第二级互连线，并且第二插头的顶部保持暴露。 侧壁形成在第二级互连线和顶部保护层的侧表面上。 随后，形成与暴露的第二插头连接的第三级互连线。 这种布置不仅减少了接触孔形成掩模的数量，而且还减少了制造步骤的数量。 此外，第二接触孔的纵横比变低，从而实现高可靠性的半导体器件。