公开(公告)号：US20060024875A1

公开(公告)日：2006-02-02

申请号：US11234118

申请日：2005-09-26

申请人： Makoto Yoshida ,  Takahiro Kumauchi ,  Yoshitaka Tadaki ,  Kazuhiko Kajigaya ,  Hideo Aoki ,  Isamu Asano

发明人： Makoto Yoshida ,  Takahiro Kumauchi ,  Yoshitaka Tadaki ,  Kazuhiko Kajigaya ,  Hideo Aoki ,  Isamu Asano

IPC分类号： H01L21/8234

CPC分类号： H01L21/2652 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/324 ,  H01L21/76802 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76889 ,  H01L21/76897 ,  H01L21/823814 ,  H01L21/823871 ,  H01L23/53257 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10882 ,  H01L27/10894 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a process for manufacturing a semiconductor integrated circuit device having a MISFET, in order that a shallow junction between the source/drain of the MISFET and a semiconductor substrate may be realized by reducing the number of heat treatment steps, all conductive films to be deposited on the semiconductor substrate are deposited at a temperature of 500° C. or lower at a step after the MISFET has been formed. Moreover, all insulating films to be deposited over the semiconductor substrate are deposited at a temperature of 500° C. or lower at a step after the MISFET has been formed.

摘要翻译： 在制造具有MISFET的半导体集成电路器件的工艺中，为了通过减少热处理步骤的数量来实现MISFET的源极/漏极与半导体衬底之间的浅结，可以将所有导电膜沉积 在形成MISFET之后的步骤中，在500℃以下的温度下沉积半导体基板。 此外，要沉积在半导体衬底上的所有绝缘膜在形成MISFET之后的步骤中在500℃或更低的温度下沉积。

公开(公告)号：US06952866B2

公开(公告)日：2005-10-11

申请号：US10679474

申请日：2003-10-07

申请人： Makoto Yoshida ,  Taro Oike ,  Atsushi Iijima

发明人： Makoto Yoshida ,  Taro Oike ,  Atsushi Iijima

IPC分类号： G11B5/31 ,  G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Method of manufacturing a thin film magnetic head which can exhibit a high-performance head characteristic without complicating the manufacturing procedure. A coil connection is integrated into one body and constituted part of the thin film coil. A connection middle pattern is provided on the coil connection at the time of forming a pole tip so that the position of the upper surface of the connection middle pattern becomes higher than that of the top pole tip. After the whole portion is covered by an insulating film, the connection middle pattern also can be exposed by polishing the surface of the insulating film until the top pole tip is exposed. Therefore, unlike the case where no connection middle pattern is provided, it is not necessary to form an opening by partially removing part of the insulating film. As a result, the number of manufacturing steps can be reduced.

摘要翻译： 制造可以呈现高性能头部特性而不使制造过程复杂化的薄膜磁头的方法。 线圈连接被集成到一个主体中并构成薄膜线圈的一部分。 在形成极尖时，在线圈连接部上设置连接中间图形，使得连接中间图案的上表面的位置比顶极尖端的位置高。 在整个部分被绝缘膜覆盖之后，连接中间图案也可以通过抛光绝缘膜的表面而暴露，直到顶极尖端暴露。 因此，与不设置连接中间图案的情况不同，不需要通过部分去除绝缘膜的一部分来形成开口。 结果，可以减少制造步骤的数量。

公开(公告)号：US06949226B2

公开(公告)日：2005-09-27

申请号：US09888527

申请日：2001-06-25

申请人： Tomio Sugimoto ,  Masumi Itaya ,  Yoshinao Hirano ,  Hiroaki Harada ,  Hachiro Hirano ,  Sigeru Sakurai ,  Makoto Yoshida ,  Masaharu Tanaka

发明人： Tomio Sugimoto ,  Masumi Itaya ,  Yoshinao Hirano ,  Hiroaki Harada ,  Hachiro Hirano ,  Sigeru Sakurai ,  Makoto Yoshida ,  Masaharu Tanaka

IPC分类号： B01D53/34 ,  B01D53/68 ,  B01J20/04 ,  B01J20/26 ,  B09B3/00 ,  C02F1/62 ,  F23J15/00 ,  F23J15/02 ,  C01D7/00 ,  C22B26/10

CPC分类号： F23J15/02 ,  B01D53/685 ,  B01D2257/2045 ,  F23G2201/304 ,  F23G2202/104 ,  F23J15/003 ,  F23J2215/30 ,  F23J2215/301 ,  F23J2215/60

摘要： A sodium-based dechlorinating agent is added to a flue gas; hydrogen chloride contained in this flue gas is removed as residue of dechlorination; the thus removed residue of dechlorination is dissolved by adding water; water-insoluble constituents are separated from the resulting aqueous solution; and after adjusting pH of the aqueous solution remaining after separation of the water-insoluble constituents, mercury, dioxin, and the like are removed and discharged. The sodium-based dechlorinating agent is mixed with a hydrophilic anti-caking agent, with an angle of repose of 40° or more, a dispersibility of less than 50, and a floodability index value of less than 90. This permits inhibition of occurrence of a pressure drop and leakage in the filter cloth of the dust collector.

摘要翻译： 将钠基脱氯剂加入到烟道气中; 该烟道气中所含的氯化氢作为脱氯残渣除去; 通过添加水来溶解除去的脱氯残渣; 从所得水溶液中分离水不溶性成分; 在分离出水不溶性成分后，调整残留水溶液的pH后，除去汞，二恶英等。 将钠基脱氯剂与亲水性防结块剂混合，休止角为40°以上，分散性小于50，防涝指数值小于90°。这允许抑制发生 集尘器滤布中的压降和泄漏。

公开(公告)号：US20050197071A1

公开(公告)日：2005-09-08

申请号：US11051642

申请日：2005-01-27

申请人： Makoto Yoshida ,  Eizou Ishizu

发明人： Makoto Yoshida ,  Eizou Ishizu

IPC分类号： H04B7/08 ,  H04B7/26 ,  H04Q7/20

CPC分类号： H04B7/086

摘要： An adaptive control apparatus that adaptively controls directivity of an array antenna is disclosed. The adaptive control apparatus that can be used by a radio apparatus and a receiver includes a setting unit configured to set up parameters such as the distance between the radio apparatus and the receiver that receives a radio frequency signal transmitted by the radio apparatus, the relative moving speed, and the moving direction of the receiver in reference to the radio apparatus. The adaptive control apparatus further includes an evaluating unit configured to evaluate how much received power at the receiver or the radio apparatus changes after a predetermined period, and a weight control unit configured to adjust two or more weighting factors about two or more antenna elements that constitute the array antenna. The directivity of the array antenna is controlled such that the amount of change of the received power is kept within fixed limits independent of the distance between the receiver and the radio apparatus.

摘要翻译： 公开了一种自适应地控制阵列天线的方向性的自适应控制装置。 可以由无线电设备和接收机使用的自适应控制装置包括：设置单元，其被配置为设置诸如无线电设备与接收由无线电设备发送的射频信号的接收机之间的距离的参数，相对移动 参考无线电设备的速度和接收机的移动方向。 自适应控制装置还包括：评估单元，被配置为评估接收机或无线电设备在预定时段之后的接收功率的变化量;以及权重控制单元，被配置为调整关于构成的两个或更多个天线元件的两个或更多个加权因子 阵列天线。 控制阵列天线的方向性，使得接收功率的变化量与接收机和无线电设备之间的距离无关地保持在固定限制内。

公开(公告)号：US20050195062A1

公开(公告)日：2005-09-08

申请号：US11063829

申请日：2005-02-23

申请人： Makoto Yoshida ,  Nobuyuki Okuzawa ,  Tomokazu Ito ,  Yukari Hishimura ,  Yoshikazu Sato

发明人： Makoto Yoshida ,  Nobuyuki Okuzawa ,  Tomokazu Ito ,  Yukari Hishimura ,  Yoshikazu Sato

IPC分类号： H01F41/04 ,  H01F17/04 ,  H01F41/00 ,  H02K1/00

CPC分类号： H01F27/2804 ,  H01F41/046 ,  H01F2027/2809

摘要： The invention relates to a coil component used as a major component of a common mode choke coil or transformer and a method of manufacturing the same, and the invention is aimed at providing a compact and low-profile coil component having a high common mode filtering property and a method of manufacturing the same. A common mode choke coil has a configuration in which a first insulation film, a first coil conductor, a second insulation film, a second coil conductor and a third insulation film are stacked in the order listed between magnetic substrates provided opposite to each other. A top portion of the first coil conductor is formed in a convex shape. The second insulation film is formed so as to follow the shape of the top portion of the first coil conductor. A bottom portion of the second coil conductor is formed in a concave shape such that it follows the shape of a top portion of the second insulation film.

摘要翻译： 本发明涉及一种用作共模扼流线圈或变压器的主要部件的线圈部件及其制造方法，本发明旨在提供一种具有高共模滤波特性的紧凑型低轮廓线圈部件 及其制造方法。 共模扼流线圈具有这样的构造，其中第一绝缘膜，第一线圈导体，第二绝缘膜，第二线圈导体和第三绝缘膜按照彼此相对设置的磁性基板之间的顺序层叠。 第一线圈导体的顶部形成为凸形。 第二绝缘膜形成为遵循第一线圈导体的顶部的形状。 第二线圈导体的底部形成为凹形，使得其遵循第二绝缘膜的顶部的形状。

公开(公告)号：US20050050717A1

公开(公告)日：2005-03-10

申请号：US10917406

申请日：2004-08-13

申请人： Makoto Yoshida ,  Nobuyuki Okuzawa

发明人： Makoto Yoshida ,  Nobuyuki Okuzawa

IPC分类号： H01F41/04 ,  G11B5/127 ,  G11B5/147

CPC分类号： G11B5/1274 ,  Y10T29/4902 ,  Y10T29/4906 ,  Y10T29/49064 ,  Y10T29/49069 ,  Y10T29/49071 ,  Y10T29/49073

摘要： The invention relates to a method of manufacturing a coil component uses as a major part of a common mode choke coil or a transformer, and there is provided a method of manufacturing a compact and low height coil component in which deterioration of impedance characteristics is low and reliability is high. An insulating film is formed on a magnetic substrate, and open regions are formed in the insulating film. A lead terminal portion is formed on the insulating film, and a planarizing film is formed on the open regions. An insulating film is formed and openings are formed in the insulating film at the open regions. A coil conductor is formed on the insulating film, and a planarizing film is further formed on the planarizing film. After a coil conductor is further formed on the coil conductor through the insulating film, the planarizing films are removed.

摘要翻译： 本发明涉及一种制造线圈部件的方法，其用作共模扼流线圈或变压器的主要部分，并且提供了一种制造其中阻抗特性劣化低的紧凑型和低高度线圈部件的方法，以及 可靠性高。 在磁性基板上形成绝缘膜，在绝缘膜上形成开放区域。 在绝缘膜上形成引线端子部，在开放区域形成平坦化膜。 形成绝缘膜，并且在开放区域的绝缘膜中形成开口。 在绝缘膜上形成线圈导体，在平坦化膜上进一步形成平坦化膜。 在通过绝缘膜在线圈导体上进一步形成线圈导体之后，去除平坦化膜。

公开(公告)号：US06836181B2

公开(公告)日：2004-12-28

申请号：US10137008

申请日：2002-05-01

申请人： Makoto Yoshida

发明人： Makoto Yoshida

IPC分类号： H03D304

CPC分类号： H04L27/14

摘要： A FSK demodulation system of the present invention has a means for comparing two preset values across 0, a positive side level shift amount and a negative side level shift amount, with an inputted amplitude level; and a demodulation means for performing demodulation based on the comparison result.

摘要翻译： 本发明的FSK解调系统具有用于将输入的幅度电平与0，正侧电平移位量和负侧电平移位量的两个预设值进行比较的装置; 以及用于基于比较结果进行解调的解调装置。

公开(公告)号：US06798793B2

公开(公告)日：2004-09-28

申请号：US10395280

申请日：2003-03-25

申请人： Shinichi Harada ,  Makoto Yoshida

发明人： Shinichi Harada ,  Makoto Yoshida

IPC分类号： H01S330

CPC分类号： H01S3/1112 ,  H01S3/067

摘要： A passively modelocked fiber laser includes a laser diode generating laser energy, a wavelength splitter guiding the laser energy generated at the laser diode to a cavity part, and a gaining medium for amplifying the laser energy in the cavity part. The passively modelocked fiber laser further includes a reflecting means for reflecting the laser energy along an optical axis passing through the gaining medium, an output means for outputting the laser energy generated in the cavity part, and a fiber isolator provided between the laser diode and the wavelength splitter. In the passively modelocked fiber laser, the fiber isolator is composed of an optical fiber having a curved shape and including a core for propagating the laser energy, a clad for coating the core, and an optical absorption film for coating the clad.

摘要翻译： 无源锁模光纤激光器包括产生激光能量的激光二极管，将激光二极管处产生的激光能量引导到空腔部分的波长分配器，以及用于放大空腔部分中的激光能量的增益介质。 被动锁模光纤激光器还包括用于沿着通过增益介质的光轴反射激光能量的反射装置，用于输出在腔体部分中产生的激光能量的输出装置，以及设置在激光二极管与激光二极管之间的光纤隔离器 波长分离器。 在被动锁模光纤激光器中，光纤隔离器由具有弯曲形状的光纤组成，包括用于传播激光能量的芯，用于涂覆芯的包层和用于涂覆包层的光学吸收膜。

公开(公告)号：US06632359B1

公开(公告)日：2003-10-14

申请号：US09831311

申请日：2001-05-08

申请人： Satoshi Uezumi ,  Makoto Yoshida

发明人： Satoshi Uezumi ,  Makoto Yoshida

IPC分类号： B01D6302

CPC分类号： B01D67/0086 ,  A61M1/16 ,  B01D63/02 ,  B01D67/0011 ,  B01D69/02 ,  B01D69/08 ,  B01D71/68 ,  B01D2325/022

摘要： A blood purifying apparatus having excellent purification performance (elimination of low molecular proteins, etc.) and being contaminated with little endotoxins flowing from the dialyzate side is described. Attention was paid to the solute permeability coefficient &agr; and water permeability performance Lp of blood purifying apparatus and the relation between &agr; and Lp has been examined. As a result, a blood purifying apparatus having excellent purification performance and substantially being free from invasion of endotoxins was obtained by regulating the value &agr;/Lp to 6×10−7 or above, or regulating &agr; within a range of 8×105 to 1.5×10−3, and the value &agr;×Lp to 2.4×10−2 or less. Also, a blood purifying apparatus having excellent purification performance and substantially being free from invasion of endotoxins was obtained by regulating the invasion ratio which is obtained by the polymer invasion test to 10% or less.

摘要翻译： 描述了具有优异的净化性能（消除低分子蛋白质等）并被从透析液侧流出的少量内毒素污染的血液净化装置。 注意血液净化装置的溶质渗透系数α和透水性Lp以及α和Lp之间的关系。 结果，通过将α/ Lp值调节至6×10 7 PDAT>或更高，或调节α值，获得了具有优异的纯化性能并且基本上没有内毒素侵入的血液净化装置 在8×10 <5 至1.5×10 < - 3 的范围内，并且值alphaxLp为2.4x10 < - 2 以下。 此外，通过将通过聚合物侵入试验获得的入侵比调节至10％以下，获得了具有优异的净化性能并且基本上不含有内毒素的血液净化装置。

公开(公告)号：US06528403B2

公开(公告)日：2003-03-04

申请号：US10013454

申请日：2001-12-13

申请人： Yoshikazu Tanabe ,  Isamu Asano ,  Makoto Yoshida ,  Naoki Yamamoto ,  Masayoshi Saito ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Isamu Asano ,  Makoto Yoshida ,  Naoki Yamamoto ,  Masayoshi Saito ,  Nobuyoshi Natsuaki

IPC分类号： H01L214763

CPC分类号： H01L21/28247 ,  H01L21/28061 ,  H01L21/28176 ,  H01L21/32105 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823828 ,  H01L21/823857 ,  H01L27/1052 ,  H01L27/10873 ,  H01L27/10894 ,  H01L29/4941

摘要： With a view to preventing the oxidation of a metal film at the time of light oxidation treatment after gate patterning and at the same time to making it possible to control the reproducibility of oxide film formation and homogeneity of oxide film thickness at gate side-wall end portions, in a gate processing step using a poly-metal, a gate electrode is formed by patterning a gate electrode material which has been deposited over a semiconductor wafer 1A having a gate oxide film formed thereon and has a poly-metal structure and then, the principal surface of the semiconductor wafer 1A heated to a predetermined temperature or vicinity thereof is supplied with a hydrogen gas which contains water at a low concentration, the water having been formed from hydrogen and oxygen by a catalytic action, to selectively oxidize the principal surface of the semiconductor wafer 1A, whereby the profile of the side-wall end portions of the gate electrode is improved.