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135 条记录 (耗时 0.049 秒)

    Catalytic sensor structure
    31.
    发明授权
    Catalytic sensor structure 失效
    催化传感器结构

    公开(公告)号：US07545010B2

    公开(公告)日：2009-06-09

    申请号：US10912082

    申请日：2004-08-06

    申请人： Shigeru Ichihara ,  Kaoru Konakahara ,  Tohru Den ,  Kazuhiko Fukutani

    发明人： Shigeru Ichihara ,  Kaoru Konakahara ,  Tohru Den ,  Kazuhiko Fukutani

    IPC分类号： H01L29/43

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  Y10S977/72 ,  Y10S977/764 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/782 ,  Y10S977/957

    摘要： The invention provides a nanostructure including nanowires having very small diameters and integrated at a high density, and capable of being applied to still further high-functional devices.The invention provides a structure including a substrate or substrate having an underlayer, and a structure formed on the substrate or substrate having an underlayer, wherein the structure includes a columnar first part (part) and a second part (part) formed to surround the first part, and the second part comprises two or more types of materials capable of forming eutectic crystals, one type of the materials is a semiconductor material, and the height of the first part from the substrate is greater than the height of the second part from the substrate.

    摘要翻译： 本发明提供纳米结构，其纳米线具有非常小的直径并且以高密度集成，并且能够应用于更多的高功能器件。 本发明提供一种结构，其包括具有底层的衬底或衬底，以及形成在具有底层的衬底或衬底上的结构，其中该结构包括柱状第一部分（部分）和第二部分（部分），该第二部分 第二部分包括能够形成共晶晶体的两种或更多种类型的材料，一种类型的材料是半导体材料，并且第一部分与基板的高度大于第二部分的高度 基质。

    Process for producing structure, structure thereof, and magnetic recording medium
    32.
    发明授权
    Process for producing structure, structure thereof, and magnetic recording medium 失效
    制造结构，结构和磁记录介质的方法

    公开(公告)号：US07534359B2

    公开(公告)日：2009-05-19

    申请号：US10559966

    申请日：2003-12-05

    申请人： Aya Imada ,  Tohru Den

    发明人： Aya Imada ,  Tohru Den

    IPC分类号： C25F3/00

    CPC分类号： G03F7/0002 ,  B29C59/022 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00

    摘要： The present invention relates to a process for producing a structure having holes at prescribed positions. The structure is produced through steps of (A) providing an impressing member having protrusions, and a substrate, (B) forming a layer, on the substrate, from a material having a less strength than the impressing member, (C) forming depressions by impressing the impressing member on the layer corresponding to protrusions of the impressing member, (D) etching the layer to bare at least a part of the surface of the substrate, and (E) anodizing the substrate to form holes on the substrate.

    摘要翻译： 本发明涉及一种在规定位置制造具有孔的结构的方法。 该结构通过以下步骤制造：（A）提供具有突起的施加构件，以及基板，（B）形成层，在基板上由强度比施加构件低的材料形成层，（C）形成凹陷 将压印构件压印在对应于施加构件的突起的层上，（D）蚀刻该层以露出衬底的至少一部分表面，以及（E）阳极氧化衬底以在衬底上形成孔。

    Method for production of a structure with pores by anodizing
    33.
    发明授权
    Method for production of a structure with pores by anodizing 失效
    通过阳极氧化生产具有孔的结构的方法

    公开(公告)号：US07455759B2

    公开(公告)日：2008-11-25

    申请号：US10543375

    申请日：2004-08-10

    申请人： Tatsuya Saito ,  Aya Imada ,  Tohru Den

    发明人： Tatsuya Saito ,  Aya Imada ,  Tohru Den

    IPC分类号： C25D11/04 ,  C23C28/00

    CPC分类号： C25D11/24 ,  C25D11/045

    摘要： An anodized coating suitable for formation of highly regulated pores is provided. A method for production of a structure having pores characterized by including the steps of: forming starting points at predetermined intervals in an aluminum alloy formed on a substrate, and forming pores by anodization with the starting points as origins. In another embodiment, first and second aluminum alloy layers are anodized to form pores penetrating into the layers, wherein a diameter of a pore in the first alloy is different from a diameter of a pore in the second alloy. In an additional embodiment, a substrate is anodized to form pores, wherein the substrate contains an additive which changes the diameter within each pore, the amount of the additive continuously changing along the direction perpendicular to the substrate.

    摘要翻译： 提供适于形成高度调节的孔的阳极氧化涂层。 一种制造具有孔结构的方法，其特征在于包括以下步骤：在形成在基板上的铝合金中以预定间隔形成起点，并以起始点为阳极氧化形成孔。 在另一个实施例中，第一和第二铝合金层被阳极氧化以形成渗入层中的孔，其中第一合金中的孔的直径不同于第二合金中的孔的直径。 在另外的实施方案中，将基底阳极氧化以形成孔，其中所述基底含有改变每个孔内的直径的添加剂，所述添加剂的量沿垂直于所述基底的方向连续变化。

    Cobalt-platinum or iron-plantinum magnetic material containing 1% to 40% Cu, Ni or B
    35.
    发明授权
    Cobalt-platinum or iron-plantinum magnetic material containing 1% to 40% Cu, Ni or B 失效
    含有1％至40％Cu，Ni或B的钴 - 铂或铁铁磁性材料

    公开(公告)号：US07286324B2

    公开(公告)日：2007-10-23

    申请号：US10813005

    申请日：2004-03-31

    申请人： Nobuhiro Yasui ,  Tohru Den

    发明人： Nobuhiro Yasui ,  Tohru Den

    IPC分类号： G11B5/82 ,  G11B5/66 ,  G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/65 ,  G11B5/012 ,  G11B5/653 ,  G11B5/656 ,  G11B5/84

    摘要： A CoPt- or FePt-alloy magnetic material in which a temperature to transform into an L10-ordered alloy is reduced and magnetic anisotropy energy is controlled, and a method for manufacturing the magnetic material are provided. In a CoPt- or FePt-alloy magnetic material obtained according to plating, at least one element of Cu, Ni and B is contained with an atomic percent equal to or more than 1% and equal to or less than 40%. A method for manufacturing a magnetic material includes a step of depositing a magnetic material in which at least one element of Cu, Ni and B is contained in a CoPt- or FePt-alloy magnetic material with an atomic percent equal to or more than 1% and equal to or less than 40%, from a plating solution, and a step of transforming the deposited magnetic material into an L10-ordered alloy according to annealing at a temperature equal to or lower than 500° C.

    摘要翻译： 其中转变成L1 <0> 的合金的温度降低并且磁各向异性能被控制的CoPt或FePt合金磁性材料，并且提供了制造磁性材料的方法。 在根据电镀获得的CoPt或FePt合金磁性材料中，含有等于或大于1％且等于或小于40％的原子百分比的Cu，Ni和B的至少一种元素。 一种制造磁性材料的方法包括沉积磁性材料的步骤，其中在CoPt-或FePt-合金磁性材料中含有至少一种Cu，Ni和B元素，原子百分比等于或大于1％ 并且等于或小于40％;以及在等于或低于500°的温度下退火，将沉积的磁性材料转变成L1 <！ - SIPO

    Structure having pores, magnetic recording medium, and method of manufacturing same
    37.
    发明授权
    Structure having pores, magnetic recording medium, and method of manufacturing same 失效
    具有孔的结构，磁记录介质及其制造方法

    公开(公告)号：US07183012B2

    公开(公告)日：2007-02-27

    申请号：US10389935

    申请日：2003-03-18

    申请人： Tatsuya Saito ,  Tohru Den

    发明人： Tatsuya Saito ,  Tohru Den

    IPC分类号： G11B5/708 ,  G11B5/71 ,  B05D5/12

    CPC分类号： C23C14/5853 ,  C23C14/5886 ,  C25D11/045 ,  C25D11/16 ,  C25D11/20 ,  G11B5/855 ,  G11B5/858

    摘要： The invention provides a magnetic recording medium and a method of manufacturing the magnetic recording medium, in which a high density and good storage stability can be achieved by giving anisotropy in shape to a magnetic substance. A plan shape of the magnetic substance in the magnetic recording medium, which appears on the recording surface side, is an ellipse that is present within a rectangle and has a minor axis with a length equal to a short side of the rectangle. A quadrilateral defined by four intersects of two adjacent vertical rows and two adjacent horizontal rows, each of these rows comprising a plurality of pores, has a rectangular or rhombic shape.

    摘要翻译： 本发明提供一种磁记录介质和制造磁记录介质的方法，其中通过给予磁性物质的形状各向异性，可以实现高密度和良好的储存稳定性。 在记录表面侧出现的磁记录介质中的磁性物质的平面形状是存在于矩形内并具有长度等于矩形短边的短轴的椭圆。 由两个相邻的垂直行和两个相邻的水平行的四个相交限定的四边形，这些行中的每一行包括多个孔，具有矩形或菱形。

    Field-effect transistor, sensor using it, and production method thereof
    40.
    发明申请
    Field-effect transistor, sensor using it, and production method thereof 失效
    场效应晶体管，使用它的传感器及其制造方法

    公开(公告)号：US20060120918A1

    公开(公告)日：2006-06-08

    申请号：US10530549

    申请日：2004-08-04

    申请人： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Youhei Ishida ,  Tohru Den

    发明人： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Youhei Ishida ,  Tohru Den

    IPC分类号： G01N33/00

    CPC分类号： G01N27/4146 ,  Y10S438/96 ,  Y10T436/11 ,  Y10T436/114165

    摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

    摘要翻译： 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。