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1.发明申请公开(公告)号：US20080076201A1
公开(公告)日：2008-03-27
申请号：US11945838
申请日：2007-11-27
IPC分类号： H01L21/00
CPC分类号： G01N27/4146 , Y10S438/96 , Y10T436/11 , Y10T436/114165
摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
摘要翻译： 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。
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2.发明申请公开(公告)号：US20060120918A1
公开(公告)日：2006-06-08
申请号：US10530549
申请日：2004-08-04
IPC分类号： G01N33/00
CPC分类号： G01N27/4146 , Y10S438/96 , Y10T436/11 , Y10T436/114165
摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
摘要翻译： 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。
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3.发明授权公开(公告)号：US07329387B2
公开(公告)日：2008-02-12
申请号：US10530549
申请日：2004-08-04
CPC分类号： G01N27/4146 , Y10S438/96 , Y10T436/11 , Y10T436/114165
摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
摘要翻译： 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。
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4.发明授权公开(公告)号：US07829362B2
公开(公告)日：2010-11-09
申请号：US11945838
申请日：2007-11-27
申请人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Yohei Ishida , Tohru Den
发明人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Yohei Ishida , Tohru Den
IPC分类号： H01L21/336
CPC分类号： G01N27/4146 , Y10S438/96 , Y10T436/11 , Y10T436/114165
摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
摘要翻译： 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。
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5.发明申请DOUBLE-SIDED REUSABLE TEMPLATE FOR FABRICATION OF SEMICONDUCTOR SUBSTRATES FOR PHOTOVOLTAIC CELL AND MICROELECTRONICS DEVICE MANUFACTURING 有权用于制造用于光电晶体和微电子器件制造的半导体衬底的双面可重复模板公开(公告)号：US20110256654A1
公开(公告)日：2011-10-20
申请号：US13026239
申请日：2011-02-12
申请人： Mehrdad M. Moslehi , Karl-Josef Kramer , David Xuan-Qi Wang , Pawan Kapur , Somnath Nag , George D Kamian , Jay Ashjaee , Takao Yonehara
发明人： Mehrdad M. Moslehi , Karl-Josef Kramer , David Xuan-Qi Wang , Pawan Kapur , Somnath Nag , George D Kamian , Jay Ashjaee , Takao Yonehara
CPC分类号： H01L21/20 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re-usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.
摘要翻译： 本公开提供了从可再使用的半导体模板的两侧制造TFSS的制造方法和装置设计，从而有效地增加了基板制造的吞吐量并降低了基板的制造成本。 对于给定数量的模板重用周期，这种方法还将每个制造的衬底（TFSS）的平均起始模板成本降低约2倍。
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6.发明授权Transfer method of functional region, LED array, LED printer head, and LED printer 有权功能区转移方式，LED阵列，LED打印头，LED打印机公开(公告)号：US07943488B2
公开(公告)日：2011-05-17
申请号：US12611761
申请日：2009-11-03
申请人： Takao Yonehara
发明人： Takao Yonehara
CPC分类号： H01L27/153 , B41J2/45 , H01L33/0079
摘要： A method includes placing a first bonding layer on at least one of a first functional region bonded on a release layer with a light releasable adhesive layer on a first substrate, and a transfer region on a second substrate; bonding the first functional region to the second substrate by the first bonding layer; irradiating the release layer with light with a light blocking member being provided to separate the first substrate from the first functional region at the release layer; placing a second bonding layer on at least one of a second functional region on the first substrate, and a transfer region on the release layer or a transfer region on a third substrate; bonding the second functional region to the second substrate or the third substrate by the second bonding layer; and separating the first substrate from the second functional region at the release layer.
摘要翻译： 一种方法包括将第一结合层放置在第一基板上的第一功能区域和第二基板上的转印区域上，所述第一功能区域与剥离层上的第一功能区域和第一基板上的可光剥离的粘合剂层接合; 通过第一接合层将第一功能区域接合到第二基板; 用提供遮光部件的光照射剥离层，以在剥离层处将第一基板与第一功能区域分离; 在第一基板上的第二功能区域和剥离层上的转印区域或第三基板上的转印区域中的至少一个上放置第二粘合层; 通过第二接合层将第二功能区域接合到第二基板或第三基板; 以及在所述释放层处将所述第一基底与所述第二功能区分离。
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公开(公告)号：US20100159678A1
公开(公告)日：2010-06-24
申请号：US12719796
申请日：2010-03-08
IPC分类号： H01L21/20
CPC分类号： H01L29/518 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/2807 , H01L21/28255 , H01L29/16 , H01L29/165 , H01L29/513 , H01L29/66575 , H01L29/94
摘要： Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.
摘要翻译： 锗电路型结构方便。 在一个示例实施例中，实施多步生长和退火工艺以在包括硅（Si）或含硅材料的衬底上生长含锗（Ge）的材料，例如异质外延锗。 在某些应用中，缺陷通常被限制在硅/锗界面附近，通常阻止含锗材料的上表面的缺陷穿线。 这些方法适用于包括锗MOS电容器，pMOSFET和光电器件在内的各种器件。
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8.发明申请公开(公告)号：US20070285666A1
公开(公告)日：2007-12-13
申请号：US11659717
申请日：2005-09-14
IPC分类号： G01N21/00
CPC分类号： G01N21/554 , G01N21/648 , G01N2021/258 , G01N2201/0635 , G01N2201/0636
摘要： An information-acquiring device for acquiring information on an objective substance to be detected, which is provided with a sensing element that has a surface capable of fixing the objective substance to be detected thereon, and makes applied light change its wavelength characteristics in response to the fixed state of the objective substance to be detected onto the surface, a light source, and light-receiving means for receiving light emitted from the light source through the sensing element, has the light-receiving means and the light source arranged on the same substrate so that the light which has been emitted from the light source and has been transmitted through the sensing element can be led to the light-receiving means, and has means for varying the wavelength regions of each light incident on each of a plurality of the light-receiving means installed in an optical path from the light source to the light-receiving means.
摘要翻译： 一种信息获取装置，用于获取关于待检测的物质的信息，该信息获取装置设置有具有能够固定待检测的物体的表面的感测元件，并且使得施加的光响应于该检测元件的波长特性而改变其 要检测的目标物质的固定状态，光源和用于接收通过感测元件从光源发射的光的光接收装置，其中光接收装置和光源布置在同一基板上 使得已经从光源发射并已经透射通过感测元件的光可以被引导到光接收装置，并且具有用于改变入射到多个光中的每一个的每个光的波长区域的装置 - 接收装置安装在从光源到光接收装置的光路中。
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公开(公告)号：US07148119B1
公开(公告)日：2006-12-12
申请号：US09161774
申请日：1998-09-29
申请人： Kiyofumi Sakaguchi , Takao Yonehara
发明人： Kiyofumi Sakaguchi , Takao Yonehara
IPC分类号： H01L23/12
CPC分类号： H01L21/6835 , H01L21/76259 , H01L2221/68363
摘要： A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.
摘要翻译： 提供了一种制造半导体衬底的方法，其包括在第一衬底上形成多孔层的步骤，在第一衬底的多孔层上形成无孔单晶半导体层，将无孔单晶层接合到第二衬底上， 在多孔层上的基底，去除第二基底上的多孔层，以及去除构成第一基底的多孔层。
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公开(公告)号：US20060147169A1
公开(公告)日：2006-07-06
申请号：US10545157
申请日：2004-08-27
申请人： Mitsuro Sugita , Takao Yonehara
发明人： Mitsuro Sugita , Takao Yonehara
IPC分类号： G02B6/10 , C03B37/023 , C03B37/022
CPC分类号： G01N21/774 , B82Y20/00 , G01N21/7746 , G02B6/1225 , G02B6/1228 , G02B6/125 , G02B6/131 , G02B2006/12176
摘要： An optical device comprising a substrate, a porous layer laid on the substrate having a pore diameter smaller than the wavelength of light and a crystal layer laid on the porous layer showing a refractive index greater than that of the porous layer is presented. The optical device is manufactured by a method comprising a step of forming a porous layer having a pore diameter smaller than the wavelength of light on the surface of a substrate and a step of forming a crystal layer showing a refractive index greater than that of the porous layer on the porous layer. Since the porous layer is clad, light can be confined with ease.
摘要翻译： 提供了一种光学装置，其包括基底，放置在基底上的孔径小于光波长的多孔层和放置在多孔层上的结晶层，其折射率大于多孔层的折射率。 该光学器件通过包括形成孔径小于衬底表面上的光的波长的多孔层的步骤的方法制造，并且形成表现出比多孔层的折射率更大的折射率的晶体层的步骤 在多孔层上。 由于多孔层被包覆，所以可以容易地限制光。
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