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    Field-effect transistor, sensor using it, and production method thereof
    1.
    发明申请
    Field-effect transistor, sensor using it, and production method thereof 失效
    场效应晶体管，使用它的传感器及其制造方法

    公开(公告)号：US20060120918A1

    公开(公告)日：2006-06-08

    申请号：US10530549

    申请日：2004-08-04

    申请人： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Youhei Ishida ,  Tohru Den

    发明人： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Youhei Ishida ,  Tohru Den

    IPC分类号： G01N33/00

    CPC分类号： G01N27/4146 ,  Y10S438/96 ,  Y10T436/11 ,  Y10T436/114165

    摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

    摘要翻译： 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。

    FIELD-EFFECT TRANSISTOR, SENSOR USING IT, AND PRODUCTION METHOD THEREOF
    2.
    发明申请
    FIELD-EFFECT TRANSISTOR, SENSOR USING IT, AND PRODUCTION METHOD THEREOF 有权
    现场效应晶体管，使用它的传感器及其生产方法

    公开(公告)号：US20080076201A1

    公开(公告)日：2008-03-27

    申请号：US11945838

    申请日：2007-11-27

    申请人： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Youhei Ishida ,  Tohru Den

    发明人： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Youhei Ishida ,  Tohru Den

    IPC分类号： H01L21/00

    CPC分类号： G01N27/4146 ,  Y10S438/96 ,  Y10T436/11 ,  Y10T436/114165

    摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

    摘要翻译： 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。

    Field-effect transistor, sensor using it, and production method thereof
    3.
    发明授权
    Field-effect transistor, sensor using it, and production method thereof 失效
    场效应晶体管，使用它的传感器及其制造方法

    公开(公告)号：US07329387B2

    公开(公告)日：2008-02-12

    申请号：US10530549

    申请日：2004-08-04

    申请人： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Youhei Ishida ,  Tohru Den

    发明人： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Youhei Ishida ,  Tohru Den

    IPC分类号： B32B5/02 ,  B32B27/04 ,  B32B27/12 ,  B32B27/00 ,  H01L29/80

    CPC分类号： G01N27/4146 ,  Y10S438/96 ,  Y10T436/11 ,  Y10T436/114165

    摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

    摘要翻译： 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。

    Field-effect transistor, sensor using it, and production method thereof
    4.
    发明授权
    Field-effect transistor, sensor using it, and production method thereof 有权
    场效应晶体管，使用它的传感器及其制造方法

    公开(公告)号：US07829362B2

    公开(公告)日：2010-11-09

    申请号：US11945838

    申请日：2007-11-27

    申请人： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Yohei Ishida ,  Tohru Den

    发明人： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Yohei Ishida ,  Tohru Den

    IPC分类号： H01L21/336

    CPC分类号： G01N27/4146 ,  Y10S438/96 ,  Y10T436/11 ,  Y10T436/114165

    摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

    摘要翻译： 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。

    Semiconductor device and method for manufacturing the same
    5.
    发明申请
    Semiconductor device and method for manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20060022342A1

    公开(公告)日：2006-02-02

    申请号：US10986939

    申请日：2004-11-15

    申请人： Kazuhiko Fukutani ,  Tohru Den ,  Hirokatsu Miyata

    发明人： Kazuhiko Fukutani ,  Tohru Den ,  Hirokatsu Miyata

    IPC分类号： H01L23/52

    CPC分类号： H01L21/76879 ,  G11B5/7325 ,  G11B5/743 ,  G11B5/855 ,  H01L21/7682 ,  H01L21/76838 ,  H01L21/76877 ,  H01L21/76888 ,  H01L23/52 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device has multi-layered interlayer insulating layers 3 formed on a semiconductor substrate 1, and wirings 4 formed in the interlayer insulating layers 3. The interlayer insulating layers 3 are composed of porous bodies having fine columnar pores and parent-material regions consisting mainly of silicon oxides surrounding the fine pores. The wirings 4 are composed of structures wherein columnar substances containing aluminum are dispersed in a base material containing silicon, or regions wherein an electrically conductive material is introduced in a portion of the porous bodies. The average diameter of the fine pores in the porous bodies is 1 nm or larger and 10 nm or smaller, and the average distance between the fine pores is 3 nm or larger and 15 nm or smaller. The fine pores in the porous bodies is formed perpendicularly, or substantially perpendicularly to the film surface on a semiconductor substrate 1.

    摘要翻译： 半导体器件具有形成在半导体衬底1上的多层层间绝缘层3和形成在层间绝缘层3中的布线4。 层间绝缘层3由具有细柱状孔的多孔体和主要由围绕细孔的氧化硅组成的母材区构成。 配线4由含有铝的柱状物质分散在含有硅的基材中的结构或其中在多孔体的一部分中导入导电材料的区域构成。 多孔体的细孔的平均直径为1nm以上且10nm以下，微细孔的平均距离为3nm以上且15nm以下。 多孔体中的细孔形成为垂直于或基本垂直于半导体基板1上的膜表面。

    Method for producing columnar structured material
    8.
    发明授权
    Method for producing columnar structured material 失效
    柱状结构材料的制造方法

    公开(公告)号：US08435899B2

    公开(公告)日：2013-05-07

    申请号：US12555195

    申请日：2009-09-08

    申请人： Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Miki Ogawa ,  Hiroshi Okura ,  Kazuhiko Fukutani ,  Tohru Den

    发明人： Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Miki Ogawa ,  Hiroshi Okura ,  Kazuhiko Fukutani ,  Tohru Den

    IPC分类号： H01L21/311

    CPC分类号： C30B7/00 ,  C30B7/005 ,  C30B29/605

    摘要： A microcolumnar structured material having a desired material. The columnar structured material includes columnar members obtained by introducing a filler into columnar holes formed in a porous material. The porous material has the columnar holes formed by removing columnar substances from a structured material in which the columnar substances containing a first component are dispersed in a matrix member containing a second component capable of forming a eutectic with the first component. The matrix member may be removed. In the columnar structured material, the filler is a conductive material, and an electrode can be structured by electrically connecting the conductive materials in at least a part of a plurality of holes to a conductor.

    摘要翻译： 具有所需材料的微柱结构材料。 柱状结构材料包括通过将填料引入形成在多孔材料中的柱状孔中获得的柱状构件。 多孔材料具有通过从其中含有第一成分的柱状物质分散在含有能够与第一成分形成共晶的第二成分的基质成分的结构化材料中除去柱状物质而形成的柱状孔。 可以去除矩阵构件。 在柱状结构材料中，填料是导电材料，并且电极可以通过将多个孔的至少一部分中的导电材料电连接到导体来构造。