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31.发明申请公开(公告)号：US20140306162A1
公开(公告)日：2014-10-16
申请号：US14127714
申请日：2012-06-19
申请人： Sarah L. Poe , Christopher L. Paradise , Laura R. Muollo , Reshma Pal , John C. Warner , Michael B. Korzenski
发明人： Sarah L. Poe , Christopher L. Paradise , Laura R. Muollo , Reshma Pal , John C. Warner , Michael B. Korzenski
IPC分类号： H01M4/1391 , H01M4/1393 , H01M4/04
CPC分类号： H01M4/1391 , B03D1/006 , B03D1/008 , B03D1/02 , H01M4/04 , H01M4/1393 , H01M4/48 , H01M4/58 , H01M4/587 , H01M4/625 , H01M10/0525 , H01M10/54 , Y02W30/84
摘要： A method of recovering lithium cobalt oxide from spent lithium ion batteries, wherein said method is more environmentally friendly than the methods presently known in the art. The method includes a froth flotation step using renewable and biodegradable solvents such as terpenes and formally hydrated terpenes. The method can also include a relithiation step to return the Li:Co ratio back to about 1:1 for use in second-life applications.
摘要翻译： 从废锂离子电池中回收钴酸锂的方法，其中所述方法比本领域目前已知的方法更环保。 该方法包括使用可再生和可生物降解的溶剂如萜烯和正式水合萜烯的泡沫浮选步骤。 该方法还可以包括将Li：Co比率返回到约1:1的重复步骤，以用于第二寿命应用中。
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公开(公告)号：US08026200B2
公开(公告)日：2011-09-27
申请号：US12434321
申请日：2009-05-01
申请人： Emanuel Cooper , Julie Cissell , Renjie Zhou , Michael B. Korzenski , George G. Totir , Mahmoud Khojasteh
发明人： Emanuel Cooper , Julie Cissell , Renjie Zhou , Michael B. Korzenski , George G. Totir , Mahmoud Khojasteh
IPC分类号： H01L21/02
CPC分类号： G03F7/423 , H01L21/31133
摘要： A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).
摘要翻译： 已经开发了用于从微电子器件去除体积和/或硬化的光致抗蚀剂材料的方法和低pH组合物。 低pH组合物包括至少一种无机酸和至少一种氧化剂。 低pH组合物有效地去除硬化的光致抗蚀剂材料，同时不损坏下面的含硅层。
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33.发明授权Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon 有权用于回收其上具有低k电介质材料的半导体晶片的组合物和方法公开(公告)号：US07960328B2
公开(公告)日：2011-06-14
申请号：US12093290
申请日：2006-11-09
IPC分类号： C11D7/32
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。
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公开(公告)号：US20100176082A1
公开(公告)日：2010-07-15
申请号：US12520138
申请日：2007-12-21
申请人： Emanuel I. Cooper , Eileen Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
发明人： Emanuel I. Cooper , Eileen Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
IPC分类号： H05K3/00 , C01B33/107 , C09K13/08
CPC分类号： H01L21/31111 , B65D85/70 , C09K13/08 , G03F7/422 , H01L21/0206 , H01L2924/0002 , H01L2924/00
摘要： Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.
摘要翻译： 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。
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公开(公告)号：US20090281016A1
公开(公告)日：2009-11-12
申请号：US12434321
申请日：2009-05-01
申请人： Emanuel Cooper , Julie Cissell , Renjie Zhou , Michael B. Korzenski , George G. Totir , Mahmoud Khojasteh
发明人： Emanuel Cooper , Julie Cissell , Renjie Zhou , Michael B. Korzenski , George G. Totir , Mahmoud Khojasteh
IPC分类号： G03F7/42
CPC分类号： G03F7/423 , H01L21/31133
摘要： A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).
摘要翻译： 已经开发了用于从微电子器件去除体积和/或硬化的光致抗蚀剂材料的方法和低pH组合物。 低pH组合物包括至少一种无机酸和至少一种氧化剂。 低pH组合物有效地去除硬化的光致抗蚀剂材料，同时不损坏下面的含硅层。
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36.发明授权Sustainable process for reclaiming precious metals and base metals from e-waste 有权从电子垃圾中回收贵金属和贱金属的可持续的过程公开(公告)号：US09238850B2
公开(公告)日：2016-01-19
申请号：US13817868
申请日：2011-08-19
申请人： Michael B. Korzenski , Ping Jiang , James Norman , John Warner , Laura Ingalls , Dinakar Gnanamgari , Fred Strickler , Ted Mendum
发明人： Michael B. Korzenski , Ping Jiang , James Norman , John Warner , Laura Ingalls , Dinakar Gnanamgari , Fred Strickler , Ted Mendum
CPC分类号： C22B11/046 , C22B1/005 , C22B3/0005 , C22B3/16 , C22B7/006 , C22B7/007 , C22B7/008 , C22B15/0006 , C22B15/0067 , C22B15/0069 , C22B15/0071 , C22B15/0073 , C22B15/0078 , Y02P10/214 , Y02P10/234 , Y02W30/54
摘要： Processes for recycling electronic components removed from printed wire boards, whereby precious metals and base metals are extracted from the electronic components using environmentally friendly compositions. At least gold, silver and copper ions can be extracted from the electronic components and reduced to their respective metals using the processes and compositions described herein.
摘要翻译： 用于回收从印刷线路板上移除的电子元件的方法，由此使用环境友好的组合物从电子元件中提取贵金属和贱金属。 可以使用本文所述的方法和组合物从电子部件中提取至少金，银和铜离子并将其还原成各自的金属。
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公开(公告)号：US09215813B2
公开(公告)日：2015-12-15
申请号：US13641371
申请日：2011-04-15
CPC分类号： H05K3/22 , C22B7/007 , C22B7/008 , C22B11/046 , C23F1/44 , C25C1/20 , H05K2203/176 , H05K2203/178 , Y02P10/214 , Y02P10/234 , Y02P20/582 , Y02P70/613 , Y02W30/54 , Y10T29/49815
摘要： Processes for recycling printed wire boards using environmentally-friendly compositions, wherein electronic components, precious metals and base metals may be collected for reuse and recycling.
摘要翻译： 使用环境友好的组合物回收印刷线路板的方法，其中电子元件，贵金属和贱金属可以被收集用于再利用和再循环。
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公开(公告)号：US08778210B2
公开(公告)日：2014-07-15
申请号：US12520138
申请日：2007-12-21
申请人： Emanuel I. Cooper , Eileen R. Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
发明人： Emanuel I. Cooper , Eileen R. Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
CPC分类号： H01L21/31111 , B65D85/70 , C09K13/08 , G03F7/422 , H01L21/0206 , H01L2924/0002 , H01L2924/00
摘要： Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.
摘要翻译： 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。
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39.发明授权Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon 有权用于回收其上具有低k电介质材料的半导体晶片的组合物和方法公开(公告)号：US08642526B2
公开(公告)日：2014-02-04
申请号：US13103536
申请日：2011-05-09
IPC分类号： G03F7/42
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。
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40.发明申请SUSTAINABLE PROCESS FOR RECLAIMING PRECIOUS METALS AND BASE METALS FROM E-WASTE 有权从废弃物中回收重金属和碱金属的可持续工艺公开(公告)号：US20130336857A1
公开(公告)日：2013-12-19
申请号：US13817868
申请日：2011-08-19
申请人： Michael B. Korzenski , Ping Jiang , James Norman , John Warner , Laura Ingalls , Dinakar Gnanamgari , Fred Strickler , Ted Mendum
发明人： Michael B. Korzenski , Ping Jiang , James Norman , John Warner , Laura Ingalls , Dinakar Gnanamgari , Fred Strickler , Ted Mendum
CPC分类号： C22B11/046 , C22B1/005 , C22B3/0005 , C22B3/16 , C22B7/006 , C22B7/007 , C22B7/008 , C22B15/0006 , C22B15/0067 , C22B15/0069 , C22B15/0071 , C22B15/0073 , C22B15/0078 , Y02P10/214 , Y02P10/234 , Y02W30/54
摘要： Processes for recycling electronic components removed from printed wire boards, whereby precious metals and base metals are extracted from the electronic components using environmentally friendly compositions. At least gold, silver and copper ions can be extracted from the electronic components and reduced to their respective metals using the processes and compositions described herein.
摘要翻译： 用于回收从印刷线路板上移除的电子元件的方法，由此使用环境友好的组合物从电子元件中提取贵金属和贱金属。 可以使用本文所述的方法和组合物从电子部件中提取至少金，银和铜离子并将其还原成各自的金属。
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