公开(公告)号：US08026200B2

公开(公告)日：2011-09-27

申请号：US12434321

申请日：2009-05-01

申请人： Emanuel Cooper ,  Julie Cissell ,  Renjie Zhou ,  Michael B. Korzenski ,  George G. Totir ,  Mahmoud Khojasteh

发明人： Emanuel Cooper ,  Julie Cissell ,  Renjie Zhou ,  Michael B. Korzenski ,  George G. Totir ,  Mahmoud Khojasteh

IPC分类号： H01L21/02

CPC分类号： G03F7/423 ,  H01L21/31133

摘要： A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).

摘要翻译： 已经开发了用于从微电子器件去除体积和/或硬化的光致抗蚀剂材料的方法和低pH组合物。 低pH组合物包括至少一种无机酸和至少一种氧化剂。 低pH组合物有效地去除硬化的光致抗蚀剂材料，同时不损坏下面的含硅层。

公开(公告)号：US20090281016A1

公开(公告)日：2009-11-12

申请号：US12434321

申请日：2009-05-01

申请人： Emanuel Cooper ,  Julie Cissell ,  Renjie Zhou ,  Michael B. Korzenski ,  George G. Totir ,  Mahmoud Khojasteh

发明人： Emanuel Cooper ,  Julie Cissell ,  Renjie Zhou ,  Michael B. Korzenski ,  George G. Totir ,  Mahmoud Khojasteh

IPC分类号： G03F7/42

CPC分类号： G03F7/423 ,  H01L21/31133

摘要： A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).

摘要翻译： 已经开发了用于从微电子器件去除体积和/或硬化的光致抗蚀剂材料的方法和低pH组合物。 低pH组合物包括至少一种无机酸和至少一种氧化剂。 低pH组合物有效地去除硬化的光致抗蚀剂材料，同时不损坏下面的含硅层。

公开(公告)号：US20110039747A1

公开(公告)日：2011-02-17

申请号：US12673860

申请日：2008-08-20

申请人： Renjie Zhou ,  Emanuel Cooper ,  Michael B. Korzenski ,  Ping Jiang

发明人： Renjie Zhou ,  Emanuel Cooper ,  Michael B. Korzenski ,  Ping Jiang

IPC分类号： G03F7/42

CPC分类号： G03F7/423 ,  H01L21/31133

摘要： A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).

摘要翻译： 已经开发了用于从微电子器件去除体积和/或硬化的光致抗蚀剂材料的方法和含有无机酸的组合物。 含无机酸的组合物包括至少一种无机酸，至少一种含硫氧化剂和任选的至少一种含金属离子的催化剂。 含有无机酸的组合物有效地去除硬化的光致抗蚀剂材料，同时不损坏下面的含硅层。

公开(公告)号：US20050238906A1

公开(公告)日：2005-10-27

申请号：US11167277

申请日：2005-06-28

申请人： Emanuel Cooper ,  Charles Goldsmith ,  Stephen Kilpatrick ,  Carmen Mojica ,  Henry Nye

发明人： Emanuel Cooper ,  Charles Goldsmith ,  Stephen Kilpatrick ,  Carmen Mojica ,  Henry Nye

IPC分类号： C23C2/04 ,  C23C2/08 ,  H05K3/34 ,  B32B15/01 ,  C25D3/60

CPC分类号： C23C2/04 ,  C23C2/08 ,  H05K3/3463 ,  H05K3/3473 ,  H05K2203/073 ,  Y10S428/936 ,  Y10T428/12493 ,  Y10T428/12528 ,  Y10T428/12708

摘要： A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.

摘要翻译： 将第一金属通过将基底浸入包含第一金属和有机稀释剂的化合物的浴中而被镀在包含第二金属的基材上。 第二种金属比第一种金属更具有正电性。 在第一和第二金属的相图中，有机稀释剂的沸点高于共晶点。 该浴液在共晶点以上运行，但低于第二种金属的熔点。 例如，将铋浸渍在无铅锡基焊球上，随后通过无助焊回流重新分布。 还提供镀层结构。

公开(公告)号：US20050127518A1

公开(公告)日：2005-06-16

申请号：US11047652

申请日：2005-02-02

申请人： Cyril Cabral ,  Stefanie Chiras ,  Emanuel Cooper ,  Hariklia Deligianni ,  Andrew Kellock ,  Judith Rubino ,  Roger Tsai

发明人： Cyril Cabral ,  Stefanie Chiras ,  Emanuel Cooper ,  Hariklia Deligianni ,  Andrew Kellock ,  Judith Rubino ,  Roger Tsai

IPC分类号： B32B15/04 ,  C25D3/56 ,  C25D9/08 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L23/532 ,  H01L29/40

CPC分类号： H01L21/2885 ,  C25D9/08 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2224/05007

摘要： A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.

公开(公告)号：US08685909B2

公开(公告)日：2014-04-01

申请号：US12409267

申请日：2009-03-23

申请人： David Angst ,  Peng Zhang ,  Jeffrey Barnes ,  Prerna Sonthalia ,  Emanuel Cooper ,  Karl Boggs

发明人： David Angst ,  Peng Zhang ,  Jeffrey Barnes ,  Prerna Sonthalia ,  Emanuel Cooper ,  Karl Boggs

IPC分类号： C11D7/50 ,  C11D11/00

CPC分类号： C11D11/0047 ,  C11D3/0073 ,  C11D3/0078 ,  C11D3/0084 ,  C11D7/265 ,  C11D7/267 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3281

摘要： An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

摘要翻译： 一种清洁组合物和用于从具有所述残留物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物包括新的腐蚀抑制剂。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。

公开(公告)号：US20090239777A1

公开(公告)日：2009-09-24

申请号：US12409267

申请日：2009-03-23

申请人： David Angst ,  Peng Zhang ,  Jeffrey Barnes ,  Prerna Sonthalia ,  Emanuel Cooper ,  Karl Boggs

发明人： David Angst ,  Peng Zhang ,  Jeffrey Barnes ,  Prerna Sonthalia ,  Emanuel Cooper ,  Karl Boggs

IPC分类号： C11D7/32

CPC分类号： C11D11/0047 ,  C11D3/0073 ,  C11D3/0078 ,  C11D3/0084 ,  C11D7/265 ,  C11D7/267 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3281

摘要： An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

摘要翻译： 一种清洁组合物和用于从具有所述残留物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物包括新的腐蚀抑制剂。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。

公开(公告)号：US20060283709A1

公开(公告)日：2006-12-21

申请号：US11155495

申请日：2005-06-20

申请人： Panayotis Andricacos ,  Emanuel Cooper ,  John Cotte ,  Hariklia Deligianni ,  Caliopo Andricacos

发明人： Panayotis Andricacos ,  Emanuel Cooper ,  John Cotte ,  Hariklia Deligianni ,  Caliopo Andricacos

IPC分类号： C25C7/02

CPC分类号： C25D17/10 ,  C25D11/02 ,  C25D17/12

摘要： Various counter-electrodes for electroplating, electrodeposition or anodizing of substrates are disclosed. According to certain embodiments, multi-segmented counter-electrodes are provided. According to additional embodiments, counter-electrodes having concave or convex top surfaces are provided. The disclosed counter-electrodes enable greater control over electrodeposition, electroetching and anodizing processes for resistive substrates, as well as more uniform plating and etching of resistive substrates. Methods for electroplating, electrodeposition or anodizing of resistive substrates using multi-segmented counter-electrodes are also provided.

摘要翻译： 公开了用于电镀，电沉积或阳极氧化基板的各种对电极。 根据某些实施例，提供多段对置电极。 根据另外的实施例，提供具有凹面或凸面顶面的对电极。 所公开的对电极能够更好地控制电沉积，电蚀和阳极氧化工艺的电阻衬底，以及更均匀的电镀和蚀刻电阻衬底。 还提供了使用多分段对电极的电镀，电沉积或阳极氧化电阻基板的方法。

公开(公告)号：US20060166474A1

公开(公告)日：2006-07-27

申请号：US11050790

申请日：2005-01-27

申请人： Philippe Vereecken ,  Veeraraghavan Basker ,  Cyril Cabral ,  Emanuel Cooper ,  Hariklia Deligianni ,  Martin Frank ,  Rajarao Jammy ,  Vamsi Paruchuri ,  Katherine Saenger ,  Xiaoyan Shao

发明人： Philippe Vereecken ,  Veeraraghavan Basker ,  Cyril Cabral ,  Emanuel Cooper ,  Hariklia Deligianni ,  Martin Frank ,  Rajarao Jammy ,  Vamsi Paruchuri ,  Katherine Saenger ,  Xiaoyan Shao

IPC分类号： H01L21/20

CPC分类号： H01L21/2885 ,  C25D3/50 ,  C25D5/02 ,  C25D5/024 ,  C25D5/54 ,  C25D7/123 ,  C25D9/04 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/76885 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78648

摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.

摘要翻译： 提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。 该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或 熔化。 还提供了利用电介质电流流动的电介质电化学修饰方法。

公开(公告)号：US20100219078A1

公开(公告)日：2010-09-02

申请号：US12771056

申请日：2010-04-30

申请人： Keiichi KURASHINA ,  Mizuki Nagai ,  Satoru Yamamoto ,  Hiroyuki Kanda ,  Koji Mishima ,  Shinya Morisawa ,  Junji Kunisawa ,  Kunihito Ide ,  Hidenao Suzuki ,  Emanuel Cooper ,  Philippe Vereecken ,  Brett Baker-O'Neal ,  Hariklia Deligianni

发明人： Keiichi KURASHINA ,  Mizuki Nagai ,  Satoru Yamamoto ,  Hiroyuki Kanda ,  Koji Mishima ,  Shinya Morisawa ,  Junji Kunisawa ,  Kunihito Ide ,  Hidenao Suzuki ,  Emanuel Cooper ,  Philippe Vereecken ,  Brett Baker-O'Neal ,  Hariklia Deligianni

IPC分类号： C25D21/12 ,  C25D5/00

CPC分类号： C25D5/22 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/004 ,  C25D17/005 ,  C25D17/12 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877

摘要： A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.

摘要翻译： 电镀装置可以牢固地进行基板的平坦化镀以形成具有平坦表面的镀膜而不使用昂贵的机构，并且不对基板施加额外的电镀。 电镀装置包括：基板支架; 具有用于水密密封基板的周边部分的密封部件的阴极部分和用于向基板供给电流的阴极电极; 设置在面向所述基板的表面的位置的阳极; 设置在所述阳极和所述基板的表面之间的多孔构件; 恒定电压控制部分，用于以恒定值控制在所述阴极和所述阳极之间施加的电压; 以及电流监视部分，用于监视在阴极和阳极之间流动的电流，并将检测信号反馈到恒压控制部分。