Composition and Method for Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon
    4.
    发明申请
    Composition and Method for Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon 有权
    用于回收具有低K电介质材料的半导体晶片的组合物和方法

    公开(公告)号:US20080261847A1

    公开(公告)日:2008-10-23

    申请号:US12093290

    申请日:2006-11-09

    IPC分类号: G03F7/42 C11D7/32

    摘要: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

    摘要翻译: 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料,蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料,用于所述结构的再循环和/或再利用,而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。

    Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
    6.
    发明授权
    Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon 有权
    用于回收其上具有低k电介质材料的半导体晶片的组合物和方法

    公开(公告)号:US07960328B2

    公开(公告)日:2011-06-14

    申请号:US12093290

    申请日:2006-11-09

    IPC分类号: C11D7/32

    摘要: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

    摘要翻译: 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料,蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料,用于所述结构的再循环和/或再利用,而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。

    REMOVAL OF LEAD FROM SOLID MATERIALS
    8.
    发明申请
    REMOVAL OF LEAD FROM SOLID MATERIALS 审中-公开
    从固体材料中去除铅

    公开(公告)号:US20150050199A1

    公开(公告)日:2015-02-19

    申请号:US14389142

    申请日:2013-04-05

    IPC分类号: C22B3/00

    摘要: A leaching composition that substantially removes lead from solid materials and a method of using said composition. Preferably, the concentration of lead in the solid materials following processing is low enough that the solid materials can be reused and/or disposed of at minimal cost to the processor. Preferably, the solid materials comprise glass, such as cathode ray tube glass.

    摘要翻译: 一种从固体材料中大量除去铅的浸出组合物和使用所述组合物的方法。 优选地,处理后的固体材料中的铅的浓度足够低,使得固体材料可以以最小的成本重新使用和/或处理。 优选地,固体材料包括玻璃,例如阴极射线管玻璃。

    COMPOSITION AND METHOD FOR REMOVING ION-IMPLANTED PHOTORESIST
    9.
    发明申请
    COMPOSITION AND METHOD FOR REMOVING ION-IMPLANTED PHOTORESIST 审中-公开
    用于去除离子胶片的组合物和方法

    公开(公告)号:US20110039747A1

    公开(公告)日:2011-02-17

    申请号:US12673860

    申请日:2008-08-20

    IPC分类号: G03F7/42

    CPC分类号: G03F7/423 H01L21/31133

    摘要: A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).

    摘要翻译: 已经开发了用于从微电子器件去除体积和/或硬化的光致抗蚀剂材料的方法和含有无机酸的组合物。 含无机酸的组合物包括至少一种无机酸,至少一种含硫氧化剂和任选的至少一种含金属离子的催化剂。 含有无机酸的组合物有效地去除硬化的光致抗蚀剂材料,同时不损坏下面的含硅层。