公开(公告)号：US4329556A

公开(公告)日：1982-05-11

申请号：US148142

申请日：1980-05-09

申请人： Roland Rubner ,  Eberhard Kuhn ,  Hellmut Ahne

发明人： Roland Rubner ,  Eberhard Kuhn ,  Hellmut Ahne

IPC分类号： C08K5/00 ,  C07D207/44 ,  C07D207/452 ,  C07D207/456 ,  C08K5/41 ,  C08K5/43

CPC分类号： C07D207/452 ,  C08K5/43

摘要： The invention relates to new arylsulfonylazides as well as the use of these compounds. The new compounds are characterized by the general formula: ##STR1## where R=aryl; x=1 or 2; and R.sup.1 and R.sup.2 are selected from H, CH.sub.3 and Cl and may be the same or different, with the provision that CH.sub.3 and Cl are not present side by side. The compounds according to the invention are suitable as photoinitiators in the preparation of relief structures by phototechniques from olefinically unsaturated polymers, as well as cross-link enhancing agents in the radical-wise cross linking of thermoplastic polymers.

摘要翻译： 本发明涉及新的芳基磺酰基叠氮化物以及这些化合物的用途。 新化合物的特征在于通式：其中R =芳基; x = 1或2; 并且R 1和R 2选自H，CH 3和Cl并且可以相同或不同，条件是CH 3和Cl不并列存在。 根据本发明的化合物在通过光学技术从烯属不饱和聚合物制备浮雕结构中以及在热塑性聚合物的自由基交联中的交联增强剂中适合作为光引发剂。

公开(公告)号：US4656244A

公开(公告)日：1987-04-07

申请号：US716675

申请日：1985-03-27

申请人： Hellmut Ahne

发明人： Hellmut Ahne

IPC分类号： C08G73/00 ,  C08G73/10 ,  C08G73/18 ,  C08G73/20 ,  G03F7/038

CPC分类号： C08G73/20 ,  C08G73/18 ,  G03F7/0387 ,  Y10T428/31504 ,  Y10T428/31721

摘要： Oligomeric and/or polymeric radiation-reactive polyimidazole and polyimidazo pyrrolone precursors which are soluble in organic solvents, can be prepared with high purity, i.e., especially without chloride, in a simple manner if an aromatic and/or heterocyclic tetraamino compound is reacted in the presence of a carbodiimide, with an olefinically unsaturated monocarboxylic acid and a dicarboxylic acid, or with an olefinically unsaturated monocarboxylic acid and an aromatic and/or heterocyclic tetracarboxylic acid dianhydride, or with an olefinically unsaturated tetracarboxylic acid diester, in the form of an addition product of the tetracarboxylic acid dianhydride and an olefinically unsaturated alcohol. The radiation-reactive precursors prepared in this manner are suitable, for instance, for the manufacture of highly heat-resistant relief structures.

摘要翻译： 可溶于有机溶剂的低聚物和/或聚合物辐射反应性聚咪唑和聚咪唑啉酮前体可以以简单的方式以高纯度，即特别是没有氯化物制备，如果芳族和/或杂环四氨基化合物在 碳烯二亚胺与烯属不饱和一元羧酸和二羧酸的存在，或与烯属不饱和一元羧酸和芳族和/或杂环四羧酸二酐或与烯属不饱和四羧酸二酯形成的加成产物 的四羧酸二酐和烯属不饱和醇。 以这种方式制备的辐射反应性前体是适合的，例如用于制造高耐热浮雕结构。

公开(公告)号：US4598038A

公开(公告)日：1986-07-01

申请号：US716673

申请日：1985-03-27

申请人： Hellmut Ahne

发明人： Hellmut Ahne

IPC分类号： C08G73/00 ,  C08G73/06 ,  C08G73/10 ,  C08G73/12 ,  G03C5/08 ,  G03F7/027 ,  G03F7/028 ,  G03F7/038 ,  H01L21/027 ,  G03C1/70

CPC分类号： G03F7/0387 ,  C08G73/0672 ,  C08G73/0694 ,  C08G73/12 ,  G03F7/038 ,  G03F7/0388 ,  Y10S430/107 ,  Y10S430/109

摘要： Highly heat resistant polyimide and polyisoindoloquinazoline dione relief structures can be produced by applying radiation-sensitive soluble polymer precursors in the form of a film or foil on a substrate, irradiating the film or foil through negative patterns with actinic light or electrons or a light, electron, ion or laser beam, removing the unirradiated film or foil portions and optionally by subsequent annealing. The relief structures are produced in an inexpensive manner with high purity and in a chloride-free form as well as having economically acceptable exposure times as a result of using as polymer precursors poly-condensation products which are prepared in the presence of carbodiimides. The polycondensation products are prepared from diamino compounds or diamino compounds having at least one orthopositioned amido group and olefinically unsaturated tetracarboxylic acid diesters of aromatic and/or heterocyclic tetracarboxylic acid dianhydrides and olefinically unsaturated alcohols. The relief structures produced by the method according to the invention are suitable in particular for use as resist, surface protection, and because of the high purity as durable protective and insulating material in the semiconductor field.

摘要翻译： 可以通过在基材上施加膜或箔形式的辐射敏感的可溶性聚合物前体来制备高度耐热的聚酰亚胺和聚多吲哚并喹啉二酮的释放结构，用光化的光或电子或光，电子照射膜或箔通过负型图案 ，离子或激光束，去除未照射的膜或箔部分，并且任选地通过随后的退火。 浮雕结构以廉价的方式生产，具有高纯度和无氯化物形式，并且作为聚碳酸酯前体在碳二亚胺存在下制备的聚缩合产物的结果，具有经济上可接受的曝光时间。 缩聚产物由具有至少一个取代的酰氨基的二氨基化合物或二氨基化合物和芳族和/或杂环四羧酸二酐和烯属不饱和醇的烯属不饱和四羧酸二酯制备。 通过根据本发明的方法产生的浮雕结构特别适合用作抗蚀剂，表面保护，并且由于在半导体领域中作为耐久的保护和绝缘材料而具有高纯度。

公开(公告)号：US4397999A

公开(公告)日：1983-08-09

申请号：US179455

申请日：1980-08-19

申请人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

发明人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

IPC分类号： C08F299/00 ,  C08F290/00 ,  C08G73/00 ,  C08G73/02 ,  C08G73/06 ,  C08G73/18 ,  C08G73/20 ,  C09D171/00 ,  G03F7/038 ,  C08G69/48

CPC分类号： C08G73/18 ,  C08G73/20 ,  G03F7/0387 ,  Y10T428/31504 ,  Y10T428/31511 ,  Y10T428/31725

摘要： The present invention relates to oligomeric and/or polymeric precursor stages of polyimidazoles and polyimidazopyrrolones, as well as to a method for preparing these new precursor stages. The invention provides addition products of olefinically unsaturated monoepoxides on amino group-containing polycondensation products of aromatic and/or heterocyclic tetraamino compounds with dicarboxylic-acid chlorides or esters or on amino group-containing polyaddition products of the tetraamino compounds and tetracarboxylic-acid dianhydrides. The radiation-reactive precursor stages according to the invention are suited, for example, for the preparation of highly heat-resistant relief structures.

摘要翻译： 本发明涉及聚咪唑和聚咪唑吡咯啉酮的低聚和/或聚合前体阶段，以及制备这些新的前体级的方法。 本发明提供了芳族和/或杂环四氨基化合物与二羧酸氯化物或酯的氨基缩聚产物或四氨基化合物和四羧酸二酐的含氨基加成产物的烯属不饱和单环氧化物的加成产物。 根据本发明的辐射反应性前体级适用于例如制备高耐热浮雕结构。

公开(公告)号：US4395482A

公开(公告)日：1983-07-26

申请号：US372540

申请日：1982-04-28

申请人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

发明人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

IPC分类号： G03C1/72 ,  C08G73/00 ,  C08G73/06 ,  C08G73/22 ,  G03F7/022 ,  G03F7/023 ,  H01L21/302 ,  G03C5/00

CPC分类号： G03F7/0233

摘要： The invention relates to heat-resistant positive resists based upon precursor stages of highly heat-resistant polymers and light-sensitive diazoquinones, as well as to a method for preparing heat-resistant relief structures of such positive resists. The positive resists of the type mentioned are developed in such a manner that they are heat-resistant as well as have a long storage life and are easily processed. The invention provides for the use of oligomer and/or polymer precursor stages of polyoxazoles in the form of polycondensation products of aromatic and/or heterocyclic dihydroxydiamino compounds and dicarboxylic acid chlorides or esters. The positive resists according to the invention are suitable especially for applications in microelectronics.

摘要翻译： 本发明涉及基于高耐热聚合物和光敏重氮醌的前体阶段的耐热正性抗蚀剂，以及制备这种正性抗蚀剂的耐热浮雕结构的方法。 上述类型的正型抗蚀剂的开发方式使得它们具有耐热性并且具有长的储存寿命并且易于加工。 本发明提供了芳族和/或杂环二羟基二氨基化合物和二羧酸氯化物或酯的缩聚产物形式的聚恶唑的低聚物和/或聚合物前体段的用途。 根据本发明的正型抗蚀剂特别适用于微电子学领域。

公开(公告)号：US4311785A

公开(公告)日：1982-01-19

申请号：US179454

申请日：1980-08-19

申请人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner ,  Erwin Schmidt

发明人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner ,  Erwin Schmidt

IPC分类号： C08G73/00 ,  C08G73/10 ,  C08L79/04 ,  G03F7/004 ,  G03F7/038 ,  G03C1/70

CPC分类号： C08L79/04 ,  G03F7/0387 ,  Y10S430/107 ,  Y10S430/109

摘要： The invention relates to a method for the preparation of highly heat-resistant relief structures on the basis of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones by applying radiation-sensitive soluble polymer precursor stages to a substrate in the form of a film or a foil; irradiating the film or the foil through negative patterns with actinic light or by deflecting a light, electron or ion beam; removing the non-irradiated film or foil portions and optionally, by subsequent annealing; as well as the use of relief structures so prepared. It is an object of the invention to simplify the preparation of relief structures of the type mentioned. For this purpose, it is provided to use as the polymer precursor stages addition products of olefinically unsaturated monoepoxides to carboxyl group-containing polyaddition products of aromatic and/or heterocyclic tetracarboxylic acid dianhydrides and diamino compounds or diamino compounds with at least one orthoposition amido group or of aromatic and/or heterocyclic dihydroxy dicarboxylic acids or corresponding diamino dicarboxylic acids and diisocyanates. The relief structures prepared by the method according to the invention are suitable in particular for use as a resist, surface coating material and insulating material.

摘要翻译： 本发明涉及一种基于聚酰亚胺，多异吲哚喹唑啉二酮，多嗪二酮和聚喹唑啉二恶英制备高耐热浮雕结构的方法，其通过将辐射敏感的可溶性聚合物前体级施用于膜或 挫败; 通过具有光化光的负图案或通过偏转光，电子或离子束照射膜或箔; 去除未照射的薄膜或箔片部分，任选地通过随后的退火; 以及如此准备的救济结构的使用。 本发明的目的是简化上述类型的浮雕结构的制备。 为此目的，提供用作烯属不饱和单环氧化物与芳族和/或杂环四羧酸二酸酐和二氨基化合物或二氨基化合物的含羧基加聚产物的至少一个取代酰胺基的加成产物 的芳族和/或杂环二羟基二羧酸或相应的二氨基二羧酸和二异氰酸酯。 通过根据本发明的方法制备的浮雕结构特别适合用作抗蚀剂，表面涂层材料和绝缘材料。

公开(公告)号：US4292398A

公开(公告)日：1981-09-29

申请号：US148143

申请日：1980-05-09

申请人： Roland Rubner ,  Eberhard Kuhn ,  Hellmut Ahne

发明人： Roland Rubner ,  Eberhard Kuhn ,  Hellmut Ahne

IPC分类号： G03F7/038 ,  G03F7/008 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/008 ,  Y10S430/12

摘要： The invention relates to a method for making more efficient the preparation of relief structures by phototechniques from mixtures containing acrylate- and/or methacrylate-group-containing polymers and photo-initiators. For this purpose, the invention provides the use of aromatic azides free of maleinimide groups as photo-initiators. The method according to the invention is suitable particularly for the structurization by phototechniques of insulating materials as well as of semiconductor and conductor materials.

摘要翻译： 本发明涉及一种通过光学技术从含有含丙烯酸酯和/或甲基丙烯酸酯基的聚合物和光引发剂的混合物制备浮雕结构更有效的方法。 为此，本发明提供了不含马来酰亚胺基团的芳族叠氮基作为光引发剂的用途。 根据本发明的方法特别适用于通过绝缘材料以及半导体和导体材料的光电技术的结构化。

公开(公告)号：US5750711A

公开(公告)日：1998-05-12

申请号：US704213

申请日：1996-08-28

申请人： Racai Sezi ,  Hellmut Ahne ,  Eberhard Kuehn

发明人： Racai Sezi ,  Hellmut Ahne ,  Eberhard Kuehn

IPC分类号： C07C69/65 ,  C07C69/773 ,  C07C69/92 ,  C07D207/46 ,  C07D249/18 ,  C07D263/58 ,  C07D277/68 ,  C07D277/70 ,  C07D311/18 ,  C07D311/54 ,  C08G69/26 ,  C08G69/32 ,  C08G69/40 ,  C08G69/42 ,  C07C231/10 ,  C07C67/08 ,  C07C381/10 ,  C08G63/16

CPC分类号： C08G69/40 ,  C07C69/92 ,  C07D207/46 ,  C07D249/18 ,  C08G69/26 ,  C08G69/42

摘要： The dicarboxylic acid derivatives according to the invention have the following structure ##STR1## wherein X denotes O, S, (CF.sub.2).sub.m, C(CF.sub.3).sub.2 or CF.sub.2 --CF(CF.sub.3) (m=1 to 10), and R stems from the following compounds: fluoro- or trifluoromethyl- and nitro- or cyanophenols, thiophenols or -aminobenzenes, 4-hydroxy-, 4-mercapto- or 4-aminocoumarins, N-hydroxysuccinimides or N-hydroxymaleimides, 2-hydroxy- or 2-mercaptobenzoxazoles or -benzothiazoles and 1-hydroxy- or 1-mercaptobenzotriazoles.

摘要翻译： 根据本发明的二羧酸衍生物具有以下结构，其中X表示O，S，（CF 2）m，C（CF 3）2或CF 2 -CF（CF 3）（m = 1至10），R茎 来自以下化合物：氟代或三氟甲基 - 和硝基或氰基苯酚，苯硫酚或 - 氨基苯，4-羟基 - ，4-巯基 - 或4-氨基香豆素，N-羟基琥珀酰亚胺或N-羟基马来酰亚胺，2-羟基 - 巯基苯并恶唑或 - 苯并噻唑和1-羟基 - 或1-巯基苯并三唑。

公开(公告)号：US4883730A

公开(公告)日：1989-11-28

申请号：US336578

申请日：1989-04-11

申请人： Hellmut Ahne ,  Winfried Plundrich

发明人： Hellmut Ahne ,  Winfried Plundrich

IPC分类号： C08F299/06 ,  C08F290/00 ,  C08G18/67 ,  G03F7/033 ,  G03F7/038

CPC分类号： G03F7/033 ,  Y10S430/146

摘要： A method of manufacturing heat-stable structured layers by applying a radiation-sensitive soluble photopolymer in the form of a layer or film on a substrate, irradiating the layer or film through a negative pattern with actinic light or through the use of a light, electron, laser, or ion beam, removing the non-irradiated layer or film parts and, optionally tempering the remaining parts is described wherein the photopolymer comprises an addition reaction product of an olefinically unsaturated monoisocyanate and a hydroxyl group-containing epoxy compound. The invention provides a cost-effective method of manufacturing dimension-precise structured layers of high quality in a single coating process. The layers produced with this method even resist high thermal and mechanical stresses in immersion soldering processes, and protect circuit surfaces effectively and permanently against moisture and corrosion. They are suitable for use, in particular, as solder resist and insulating layers in microelectronics.

摘要翻译： 通过在基板上施加层或膜形式的辐射敏感的可溶性光聚合物制造热稳定结构层的方法，用光化或通过使用光，电子照射该层或膜通过负型图案 描述了激光或离子束，去除未照射的层或膜部分，以及任选回火其余部分，其中光聚合物包含烯属不饱和单异氰酸酯与含羟基的环氧化合物的加成反应产物。 本发明提供了在单一涂覆工艺中制造高质量尺寸精确结构化层的成本有效的方法。 用这种方法生产的层甚至可以抵抗浸没焊接工艺中的高热和机械应力，并有效和永久地保护电路表面免受潮湿和腐蚀。 它们特别适用于微电子学中的阻焊剂和绝缘层。

公开(公告)号：US4622285A

公开(公告)日：1986-11-11

申请号：US716767

申请日：1985-03-27

申请人： Hellmut Ahne

发明人： Hellmut Ahne

IPC分类号： C08G73/00 ,  C08G69/42 ,  C08G73/06 ,  C08G73/08 ,  C08G73/22 ,  C08G75/00 ,  C08G75/32 ,  H01B3/30 ,  C08G65/40 ,  G03C5/00

CPC分类号： C08G75/32 ,  C08G73/08 ,  C08G73/22 ,  H01B3/303

摘要： Oligomeric and/or polymeric polyoxazole and polythiazole precursors can be prepared with high purity, i.e., especially without chloride, in a simple manner if an aromatic and/or heterocyclic dihydroxy, dialkoxy or diaryloxydiamino compound or a corresponding dithio compound is reacted with a dicarboxylic acid in the presence of a carbodiimide. The precursors prepared in this manner are suitable, for instance, for the manufacture of protection and insulating layers.

摘要翻译： 如果芳族和/或杂环二羟基，二烷氧基或二芳氧基二氨基化合物或相应的二硫代化合物与二羧酸反应，则可以以简单的方式制备低聚和/或聚合的聚恶唑和聚噻唑前体， 在碳二亚胺的存在下。 以这种方式制备的前体是适合的，例如用于制造保护层和绝缘层。